Noritaka Usami mainly focuses on Optoelectronics, Molecular beam epitaxy, Condensed matter physics, Photoluminescence and Silicon. His Optoelectronics study frequently links to adjacent areas such as Epitaxy. His study in Molecular beam epitaxy is interdisciplinary in nature, drawing from both Quantum wire and Photoconductivity.
The various areas that Noritaka Usami examines in his Condensed matter physics study include Crystallography, Activation energy and Grain boundary. His Photoluminescence study integrates concerns from other disciplines, such as Metalorganic vapour phase epitaxy, Chemical vapor deposition, Exciton, Quantum well and Germanium. His work deals with themes such as Growth rate, Optics, Supercooling, Heterojunction and Grain growth, which intersect with Silicon.
His main research concerns Optoelectronics, Silicon, Molecular beam epitaxy, Condensed matter physics and Crystallography. Noritaka Usami combines subjects such as Layer and Epitaxy with his study of Optoelectronics. His study looks at the relationship between Silicon and fields such as Crystal growth, as well as how they intersect with chemical problems.
His research in Molecular beam epitaxy tackles topics such as Heterojunction which are related to areas like Passivation. His Crystallography study incorporates themes from Thin film, Crystallization and Nucleation. His research integrates issues of Quantum well and Exciton in his study of Photoluminescence.
Noritaka Usami focuses on Optoelectronics, Silicon, Passivation, Layer and Heterojunction. His Optoelectronics research includes elements of Etching and Thin film. His work carried out in the field of Thin film brings together such families of science as Annealing, Substrate, Crystallization and Composite material.
His Silicon study also includes fields such as
His primary scientific interests are in Optoelectronics, Layer, Silicon, Analytical chemistry and Thin film. The study incorporates disciplines such as Etching and Substrate in addition to Optoelectronics. His work in Molecular beam epitaxy and Epitaxy are all subfields of Layer research.
In his research on the topic of Silicon, Dislocation, Crystal and Nucleation is strongly related with Ingot. Noritaka Usami has included themes like Orthorhombic crystal system, Composite material and Annealing in his Thin film study. His studies deal with areas such as Crystallography and Impurity as well as Annealing.
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A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
J. Yoneda;K. Takeda;T. Otsuka;T. Nakajima.
arXiv: Mesoscale and Nanoscale Physics (2017)
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.
Jun Yoneda;Kenta Takeda;Tomohiro Otsuka;Tomohiro Otsuka;Takashi Nakajima.
Nature Nanotechnology (2018)
Optical properties of ZnO rods formed by metalorganic chemical vapor deposition
B. P. Zhang;N. T. Binh;Y. Segawa;K. Wakatsuki.
Applied Physics Letters (2003)
Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
H. Sunamura;N. Usami;Y. Shiraki;S. Fukatsu.
Applied Physics Letters (1995)
Formation of highly aligned ZnO tubes on sapphire (0001) substrates
B. P. Zhang;N. T. Binh;K. Wakatsuki;Y. Segawa.
Applied Physics Letters (2004)
Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting
Kozo Fujiwara;Wugen Pan;Noritaka Usami;Kohei Sawada.
Acta Materialia (2006)
Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
E. S. Kim;N. Usami;Y. Shiraki.
Applied Physics Letters (1998)
Growth of ZnO∕MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect
B. P. Zhang;N. T. Binh;K. Wakatsuki;C. Y. Liu.
Applied Physics Letters (2005)
Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition
B.P. Zhang;K. Wakatsuki;N.T. Binh;N. Usami.
Thin Solid Films (2004)
Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure
Arnold Alguno;Noritaka Usami;Toru Ujihara;Kozo Fujiwara.
Applied Physics Letters (2003)
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