World's Best Scientists 2026 revealed!
Noritaka Usami

Noritaka Usami

D-Index & Metrics

Materials Science

D-Index
57
Citations
13003
World Ranking
7910
National Ranking
446

Noritaka Usami publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Noritaka Usami sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 835 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Noritaka Usami D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Noritaka Usami sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Noritaka Usami is affiliated with Nagoya University in Japan and has a substantial research output primarily in the fields of engineering and materials science. Their work spans multiple subfields including electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, biomedical engineering, and industrial and manufacturing engineering.

Their research interests concentrate on topics related to silicon and solar cell technologies, semiconductor materials and interfaces, thin-film transistor technologies, silicon nanostructures and photoluminescence, semiconductor materials and devices, nanowire synthesis and applications, and integrated circuits and semiconductor failure analysis.

Usami has contributed to numerous publications across various scientific venues. Some of the frequent venues for their work include:

  • Japanese Journal of Applied Physics
  • ECS Meeting Abstracts
  • Applied Physics Express
  • Journal of Applied Physics
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials

Recent papers authored or co-authored by Usami cover a range of topics related to semiconductor materials and solar cell technologies:

  • Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment, 2021, Applied Physics Express
  • Reactive deposition growth of highly (001)-oriented BaSi2 films by close-spaced evaporation, 2020, Materials Science in Semiconductor Processing
  • Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2, 2022, AIP Advances
  • Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification, 2022, ACS Omega
  • Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Frequently collaborating co-authors include:

  • Kazuhiro Gotoh
  • Yasuyoshi Kurokawa
  • Kentaro Kutsukake
  • S. Miyamoto
  • Takuto Kojima

Best Publications

  • A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

    Jun Yoneda;Kenta Takeda;Tomohiro Otsuka;Tomohiro Otsuka;Takashi Nakajima

  • A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

    J. Yoneda;K. Takeda;T. Otsuka;T. Nakajima

  • Optical properties of ZnO rods formed by metalorganic chemical vapor deposition

    B. P. Zhang;N. T. Binh;Y. Segawa;K. Wakatsuki

  • Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

    H. Sunamura;N. Usami;Y. Shiraki;S. Fukatsu

  • Formation of highly aligned ZnO tubes on sapphire (0001) substrates

    B. P. Zhang;N. T. Binh;K. Wakatsuki;Y. Segawa

  • Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting

    Kozo Fujiwara;Wugen Pan;Noritaka Usami;Kohei Sawada

  • Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition

    B.P. Zhang;K. Wakatsuki;N.T. Binh;N. Usami

  • Growth of ZnO∕MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect

    B. P. Zhang;N. T. Binh;K. Wakatsuki;C. Y. Liu

  • Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

    E. S. Kim;N. Usami;Y. Shiraki

  • Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

    Masakazu Baba;Katsuaki Toh;Kaoru Toko;Noriyuki Saito

  • Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Takashi Suemasu;Noritaka Usami

  • Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

    Arnold Alguno;Noritaka Usami;Toru Ujihara;Kozo Fujiwara

  • In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy

    Gen Sazaki;Takuro Matsui;Katsuo Tsukamoto;Noritaka Usami

  • Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    Kosuke O. Hara;Noritaka Usami;Kotaro Nakamura;Ryouta Takabe

  • Grain growth behaviors of polycrystalline silicon during melt growth processes

    Kozo Fujiwara;Yoshikazu Obinata;Toru Ujihara;Noritaka Usami

  • Directional growth method to obtain high quality polycrystalline silicon from its melt

    K. Fujiwara;W. Pan;K. Sawada;M. Tokairin

  • Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

    Isao Takahashi;Noritaka Usami;Kentaro Kutsukake;Gaute Stokkan

  • Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa

  • Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    K. Toko;R. Numata;N. Oya;N. Fukata

  • Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)

    Ryota Takabe;Kosuke O. Hara;Masakazu Baba;Weijie Du

  • Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

    K. O. Hara;N. Usami;K. Toh;M. Baba

Frequent Co-Authors

Takashi Suemasu
Takashi Suemasu University of Tsukuba
Seiji Samukawa
Seiji Samukawa Tohoku University
Takashi Sekiguchi
Takashi Sekiguchi University of Tsukuba
Masayuki Miura
Masayuki Miura University of Tokyo
Kohei M. Itoh
Kohei M. Itoh Keio University
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Yoshiyuki Kawazoe
Yoshiyuki Kawazoe Tohoku University
Eiichiro Matsubara
Eiichiro Matsubara Kyoto University
Osami Sakata
Osami Sakata Japan Synchrotron Radiation Research Institute

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