World's Best Scientists 2026 revealed!
Seiji Samukawa

Seiji Samukawa

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
9179
World Ranking
4603
National Ranking
180

Seiji Samukawa publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Seiji Samukawa sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 591 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Seiji Samukawa D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Seiji Samukawa sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2018 - IEEE Fellow For contributions to damage-free plasma processing for nano-device manufacturing

Overview

Seiji Samukawa is affiliated with Tohoku University in Japan and has contributed extensively to the field of engineering, with a focus on materials science. Their research spans several subfields, including electrical and electronic engineering, materials chemistry, condensed matter physics, biomedical engineering, and civil and structural engineering.

Their work primarily addresses semiconductor materials and devices, GaN-based semiconductor devices and materials, advancements in semiconductor devices and circuit design, nanowire synthesis and applications, as well as thermal radiation and cooling technologies. Thermal properties of materials and plasma diagnostics and applications are also significant topics within their research portfolio.

Seiji Samukawa has published in a variety of scientific journals. Frequent publication venues include:

  • IEEE Open Journal of Nanotechnology
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Materials Today Advances

Their recent published papers include:

  • "The 2022 Plasma Roadmap: low temperature plasma science and technology," 2022, Journal of Physics D Applied Physics
  • "IEEE Transactions on Nanotechnology," 2021, IEEE Transactions on Nanotechnology
  • "Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications," 2020, Nanotechnology
  • "3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination," 2023, Nature Communications
  • "First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications," 2022, IEEE Transactions on Electron Devices

Among frequent co-authors, Seiji Samukawa has collaborated with the following researchers:

  • Yiming Li
  • Daisuke Ohori
  • Kazuhiko Endo
  • Yao-Jen Lee
  • Jenn-Hwan Tarng

Seiji Samukawa was awarded the IEEE Fellow distinction in 2018 for contributions to damage-free plasma processing for nano-device manufacturing.

Best Publications

  • The 2017 Plasma Roadmap: Low temperature plasma science and technology

    I. Adamovich;S. D. Baalrud;A. Bogaerts;P. J. Bruggeman

  • The 2012 Plasma Roadmap

    Seiji Samukawa;Masaru Hori;Shahid Rauf;Kunihide Tachibana

  • Plasma processing method and equipment used therefor

    Seiji Samukawa

  • Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

    Seiji Samukawa

  • Time-modulated electron cyclotron resonance plasma discharge for controlling generation of reactive species

    Seiji Samukawa;Shuichi Furuoya

  • Pulse-time-modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge-free etching

    Seiji Samukawa;Hiroto Ohtake;Tetsu Mieno

  • Highly Selective and Highly Anisotropic SiO2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma

    Seiji Samukawa

  • Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning

    Seiji Samukawa

  • Pulse‐time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less‐charging polycrystalline silicon patterning

    Seiji Samukawa;Kazuo Terada

  • Ultrahigh frequency versus inductively coupled chlorine plasmas: Comparisons of Cl and Cl2 concentrations and electron temperatures measured by trace rare gases optical emission spectroscopy

    M. V. Malyshev;M. V. Malyshev;V. M. Donnelly;Seiji Samukawa

  • Dynamics of pulsed-power chlorine plasmas

    M. V. Malyshev;V. M. Donnelly;J. I. Colonell;Seiji Samukawa

  • Low dielectric constant insulating film and method for forming the same

    Seiji Samukawa;Shigeo Yasuhara;Shingo Kadomura;Tsutomu Shimayama

  • Plasma-etching method and apparatus therefor

    Seiji Samukawa

  • Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

    Seiji Samukawa

  • On-wafer monitoring system

    Seiji Samukawa;Tadashi Shinmura;Mitsuru Okigawa

  • Charge‐free etching process using positive and negative ions in pulse‐time modulated electron cyclotron resonance plasma with low‐frequency bias

    Hiroto Ohtake;Seiji Samukawa

  • New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes

    Seiji Samukawa;Yukito Nakagawa;Tsutomu Tsukada;Hiroyuki Ueyama

  • 50 nm gate electrode patterning using a neutral-beam etching system

    Shuichi Noda;Hirotomo Nishimori;Tohru Ida;Tsunetoshi Arikado

  • On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes.

    Seiji Samukawa;Yasushi Ishikawa;Shinya Kumagai;Mitsuru Okigawa

  • Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique

    Butsurin Jinnai;Seiichi Fukuda;Hiroto Ohtake;Seiji Samukawa

  • A 7-nm nanocolumn structure fabricated by using a ferritin iron-core mask and low-energy Cl neutral beams

    Tomohiro Kubota;Tomohiro Baba;Seiji Samukawa;Hiroyuki Kawashima

  • Time-Modulated Electron Cyclotron Resonance Plasma Discharge For Controlling The Polymerization In sio2Etching

    Seiji Samukawa

  • New radical control method for high-performance dielectric etching with nonperfluorocompound gas chemistries in ultrahigh-frequency plasma

    Seiji Samukawa;Tomonori Mukai;Ken-ichiro Tsuda

  • First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

    S.-W. Chang;J.-H. Li;M.-K. Huang;Y.-C. Huang

  • Ultimate top-down etching processes for future nanoscale devices

    S. Samukawa;T. Kubota

Frequent Co-Authors

Ichiro Yamashita
Ichiro Yamashita Osaka University
Kazuhiko Endo
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology
Noritaka Usami
Noritaka Usami Nagoya University
Takashi Fuyuki
Takashi Fuyuki Nara Institute of Science and Technology
Takahito Ono
Takahito Ono Tohoku University
Satoshi Yamasaki
Satoshi Yamasaki Kanazawa University
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Yoshitaka Okada
Yoshitaka Okada University of Tokyo
Tomokazu Matsue
Tomokazu Matsue Tohoku University
Kohei M. Itoh
Kohei M. Itoh Keio University

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