World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 77 3175 3065 883 828 265 18737

Kenneth S. Collins publications per year

The chart shows the history of publications by Kenneth S. Collins between 1987 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kenneth S. Collins published across 35 years, from 1987 to 2021, averaging 9.7 papers a year. Output peaked at 24 publications in 2008. 7 of the 341 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1987 to 2021. Vertical axis: number of publications, 0 to 24. Peak 24 publications in 2008. 1987: 4 publications 1988: 7 publications 1989: 4 publications 1990: 4 publications 1991: 3 publications 1992: 8 publications 1993: 18 publications 1994: 2 publications 1995: 3 publications 1996: 13 publications 1997: 15 publications 1998: 3 publications 1999: 6 publications 2000: 16 publications 2001: 4 publications 2002: 1 publication 2003: 9 publications 2004: 14 publications 2005: 13 publications 2006: 3 publications 2007: 15 publications 2008: 24 publications 2009: 21 publications 2010: 13 publications 2011: 24 publications 2012: 20 publications 2013: 19 publications 2014: 14 publications 2015: 7 publications 2016: 1 publication 2017: 3 publications 2018: 15 publications 2019: 8 publications 2020: 6 publications 2021: 1 publication
1987 2021

341 publications in total across all disciplines

View publications per year as a table
Kenneth S. Collins: publications per year, 1987 to 2021
Year Publications
1987 4
1988 7
1989 4
1990 4
1991 3
1992 8
1993 18
1994 2
1995 3
1996 13
1997 15
1998 3
1999 6
2000 16
2001 4
2002 1
2003 9
2004 14
2005 13
2006 3
2007 15
2008 24
2009 21
2010 13
2011 24
2012 20
2013 19
2014 14
2015 7
2016 1
2017 3
2018 15
2019 8
2020 6
2021 1
Total 341
Download as CSV

Kenneth S. Collins publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kenneth S. Collins sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 250–269 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 265 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726 265
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Kenneth S. Collins D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kenneth S. Collins sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 76–77 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 77 D-Index — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323 77
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Mechanical engineering
  • Semiconductor

His primary areas of investigation include Optoelectronics, Analytical chemistry, Wafer, Etching and Layer. His Optoelectronics research incorporates themes from Annealing, Toroid, Radio frequency, Voltage and Electronic engineering. Kenneth S. Collins has researched Analytical chemistry in several fields, including Vacuum chamber, Electrical conduit, Plasma reactor, Plasma-immersion ion implantation and Inductively coupled plasma.

The study incorporates disciplines such as Deposition, Chamber pressure, Sputtering, Semiconductor and Inductive coupling in addition to Wafer. The concepts of his Deposition study are interwoven with issues in Molecular physics and Chemical vapor deposition. Kenneth S. Collins studies Plasma etching which is a part of Etching.

His most cited work include:

  • Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process (680 citations)
  • Reactor chamber self-cleaning process (437 citations)
  • CVD of silicon oxide using TEOS decomposition and in-situ planarization process (347 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Wafer, Analytical chemistry, Plasma reactor and Electrical engineering. Kenneth S. Collins combines subjects such as Cathode, Radio frequency, Plasma processing, Etching and Inductively coupled plasma with his study of Optoelectronics. His Wafer research integrates issues from Deposition, Vacuum chamber, Semiconductor, Layer and Voltage.

His Semiconductor research is multidisciplinary, incorporating elements of Metallurgy, Oxide and Ceramic. While the research belongs to areas of Plasma reactor, Kenneth S. Collins spends his time largely on the problem of Optics, intersecting his research to questions surrounding Pedestal and Conductor. His studies in Electrical engineering integrate themes in fields like Power and Acoustics.

He most often published in these fields:

  • Optoelectronics (32.30%)
  • Wafer (19.95%)
  • Analytical chemistry (18.29%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (32.30%)
  • Plasma reactor (16.15%)
  • Distributor (2.85%)

In recent papers he was focusing on the following fields of study:

Kenneth S. Collins spends much of his time researching Optoelectronics, Plasma reactor, Distributor, Cathode ray and Substrate. His study in Etching extends to Optoelectronics with its themes. His Etching research includes themes of Electron temperature, Semiconductor and Reactive plasma.

His studies deal with areas such as Acoustics, Mechanics and Nozzle as well as Plasma reactor. The Cathode ray study which covers Diamond-like carbon that intersects with Ionization, Deposition and Inert gas. His Substrate research also works with subjects such as

  • Electrical conductor, which have a strong connection to Actuator, Electrode array, Feedthrough and Electromagnetic shielding,
  • Plasma processing together with Conductance, Flow, Thermal, Analytical chemistry and Drop,
  • Volume, which have a strong connection to Azimuthal asymmetry.

Between 2014 and 2021, his most popular works were:

  • Symmetric plasma process chamber (63 citations)
  • Ion-ion plasma atomic layer etch process and reactor (20 citations)
  • Etching with atomic precision by using low electron temperature plasma (16 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Mechanical engineering
  • Thermodynamics

His primary scientific interests are in Optoelectronics, Distributor, Plasma etching, Plasma processing and Semiconductor. His research integrates issues of Power and Substrate in his study of Optoelectronics. His Distributor study also includes

  • Ceiling together with Plasma reactor and Electrical conductor,
  • Conductor and related Protein filament.

Kenneth S. Collins has included themes like Scientific method, Electron temperature, Ion beam and Analytical chemistry in his Plasma etching study. His Semiconductor study integrates concerns from other disciplines, such as Yttrium, Metallurgy and Chemical engineering. His Etching study is concerned with the larger field of Layer.

Best Publications

  • Reactor chamber self-cleaning process

    Kam S. Law;Cissy Leung;Ching C. Tang;Kenneth S. Collins

  • CVD of silicon oxide using TEOS decomposition and in-situ planarization process

    David N. Wang;John M. White;Kam S. Law;Cissy Leung

  • Process for PECVD of silicon oxide using TEOS decomposition

    David Nin-Kou Wang;John M. White;Kam S. Law;Cissy Leung

  • Low temperature CVD process with selected stress of the CVD layer on CMOS devices

    Hiroji Hanawa;Kartik Ramaswamy;Kenneth S. Collins;Amir Al-Bayati

  • Semiconductor substrate process using a low temperature-deposited carbon-containing hard mask

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S. Collins

  • Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

    Kenneth S. Collins;Hiroji Hanawa;Kartik Ramaswamy;Andrew Nguyen

  • Silicon scavenger in an inductively coupled RF plasma reactor

    Kenneth S. Collins;Craig A. Roderick;John R. Trow;Chan-Lon Yang

  • Parallel plate electrode plasma reactor

    Eric Askarinam;Douglas Buchberger;Kenneth Collins;David Groechel

  • Method for ion implanting insulator material to reduce dielectric constant

    Amir Al-Bayati;Rick J. Roberts;Kenneth S. Collins;Ken MacWilliams

  • Chemical vapor deposition plasma process using an ion shower grid

    Hiroji Hanawa;Tsutomu Tanaka;Kenneth S. Collins;Amir Al-Bayati

  • Plasma reactor having an inductive antenna coupling power through a parallel plate electrode

    Kenneth S. Collins;Michael Rice;John Trow;Douglas Buchberger

  • Dual mode inductively coupled plasma reactor with adjustable phase coil assembly

    Samer Banna;Valentin N. Todorow;Kenneth S. Collins;Andrew Nguyen

  • Plasma immersion ion implantation process

    Kenneth S. Collins;Hiroji Hanawa;Kartik Ramaswamy;Andrew Nguyen

  • Low temperature plasma deposition process for carb

    Ramaswamy Kartik;Hanawa Hiroji;Gallo Biagio;Collins Kenneth S

  • Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S. Collins

  • Copper barrier reflow process employing high speed optical annealing

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S Collins

  • Plasma-resistant corrosive ceramic plasma with controlled electrical resistivity

    Sun Jennifer Y;Collins Kenneth S;Duan Ren-Guan;Thach Senh

  • Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners

    Kenneth Collins;Michael Rice;Douglas Buchberger;Craig Roderick

  • Semiconductor substrate process using an optically writable carbon-containing mask

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S. Collins

  • A semiconductor junction formation process includi

    Ramaswamy Kartik;Hanawa Hiroji;Gallo Biagio;Collins Kenneth S

Frequent Co-Authors

Kartik Ramaswamy
Kartik Ramaswamy Applied Materials (United States)
Shahid Rauf
Shahid Rauf Applied Materials (United States)
Andrew Nguyen
Andrew Nguyen Applied Materials (United States)
Hiroji Hanawa
Hiroji Hanawa Applied Materials (United States)
John M. White
John M. White Applied Materials (United States)
Mei Chang
Mei Chang Applied Materials (United States)
Srinivas D. Nemani
Srinivas D. Nemani Applied Materials (United States)
Ellie Yieh
Ellie Yieh Applied Materials (United States)
Ajay Kumar
Ajay Kumar Hong Kong Polytechnic University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Kenneth S. Collins

Trending Scientists

Recently Published Articles