World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
77
Citations
18737
World Ranking
3175
National Ranking
883

Kenneth S. Collins publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kenneth S. Collins sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 265 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kenneth S. Collins D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kenneth S. Collins sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 77 D-Index — 76th percentile

76% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Mechanical engineering
  • Semiconductor

His primary areas of investigation include Optoelectronics, Analytical chemistry, Wafer, Etching and Layer. His Optoelectronics research incorporates themes from Annealing, Toroid, Radio frequency, Voltage and Electronic engineering. Kenneth S. Collins has researched Analytical chemistry in several fields, including Vacuum chamber, Electrical conduit, Plasma reactor, Plasma-immersion ion implantation and Inductively coupled plasma.

The study incorporates disciplines such as Deposition, Chamber pressure, Sputtering, Semiconductor and Inductive coupling in addition to Wafer. The concepts of his Deposition study are interwoven with issues in Molecular physics and Chemical vapor deposition. Kenneth S. Collins studies Plasma etching which is a part of Etching.

His most cited work include:

  • Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process (680 citations)
  • Reactor chamber self-cleaning process (437 citations)
  • CVD of silicon oxide using TEOS decomposition and in-situ planarization process (347 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Wafer, Analytical chemistry, Plasma reactor and Electrical engineering. Kenneth S. Collins combines subjects such as Cathode, Radio frequency, Plasma processing, Etching and Inductively coupled plasma with his study of Optoelectronics. His Wafer research integrates issues from Deposition, Vacuum chamber, Semiconductor, Layer and Voltage.

His Semiconductor research is multidisciplinary, incorporating elements of Metallurgy, Oxide and Ceramic. While the research belongs to areas of Plasma reactor, Kenneth S. Collins spends his time largely on the problem of Optics, intersecting his research to questions surrounding Pedestal and Conductor. His studies in Electrical engineering integrate themes in fields like Power and Acoustics.

He most often published in these fields:

  • Optoelectronics (32.30%)
  • Wafer (19.95%)
  • Analytical chemistry (18.29%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (32.30%)
  • Plasma reactor (16.15%)
  • Distributor (2.85%)

In recent papers he was focusing on the following fields of study:

Kenneth S. Collins spends much of his time researching Optoelectronics, Plasma reactor, Distributor, Cathode ray and Substrate. His study in Etching extends to Optoelectronics with its themes. His Etching research includes themes of Electron temperature, Semiconductor and Reactive plasma.

His studies deal with areas such as Acoustics, Mechanics and Nozzle as well as Plasma reactor. The Cathode ray study which covers Diamond-like carbon that intersects with Ionization, Deposition and Inert gas. His Substrate research also works with subjects such as

  • Electrical conductor, which have a strong connection to Actuator, Electrode array, Feedthrough and Electromagnetic shielding,
  • Plasma processing together with Conductance, Flow, Thermal, Analytical chemistry and Drop,
  • Volume, which have a strong connection to Azimuthal asymmetry.

Between 2014 and 2021, his most popular works were:

  • Symmetric plasma process chamber (63 citations)
  • Ion-ion plasma atomic layer etch process and reactor (20 citations)
  • Etching with atomic precision by using low electron temperature plasma (16 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Mechanical engineering
  • Thermodynamics

His primary scientific interests are in Optoelectronics, Distributor, Plasma etching, Plasma processing and Semiconductor. His research integrates issues of Power and Substrate in his study of Optoelectronics. His Distributor study also includes

  • Ceiling together with Plasma reactor and Electrical conductor,
  • Conductor and related Protein filament.

Kenneth S. Collins has included themes like Scientific method, Electron temperature, Ion beam and Analytical chemistry in his Plasma etching study. His Semiconductor study integrates concerns from other disciplines, such as Yttrium, Metallurgy and Chemical engineering. His Etching study is concerned with the larger field of Layer.

Best Publications

  • Reactor chamber self-cleaning process

    Kam S. Law;Cissy Leung;Ching C. Tang;Kenneth S. Collins

  • CVD of silicon oxide using TEOS decomposition and in-situ planarization process

    David N. Wang;John M. White;Kam S. Law;Cissy Leung

  • Process for PECVD of silicon oxide using TEOS decomposition

    David Nin-Kou Wang;John M. White;Kam S. Law;Cissy Leung

  • Low temperature CVD process with selected stress of the CVD layer on CMOS devices

    Hiroji Hanawa;Kartik Ramaswamy;Kenneth S. Collins;Amir Al-Bayati

  • Semiconductor substrate process using a low temperature-deposited carbon-containing hard mask

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S. Collins

  • Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

    Kenneth S. Collins;Hiroji Hanawa;Kartik Ramaswamy;Andrew Nguyen

  • Silicon scavenger in an inductively coupled RF plasma reactor

    Kenneth S. Collins;Craig A. Roderick;John R. Trow;Chan-Lon Yang

  • Parallel plate electrode plasma reactor

    Eric Askarinam;Douglas Buchberger;Kenneth Collins;David Groechel

  • Method for ion implanting insulator material to reduce dielectric constant

    Amir Al-Bayati;Rick J. Roberts;Kenneth S. Collins;Ken MacWilliams

  • Chemical vapor deposition plasma process using an ion shower grid

    Hiroji Hanawa;Tsutomu Tanaka;Kenneth S. Collins;Amir Al-Bayati

  • Plasma reactor having an inductive antenna coupling power through a parallel plate electrode

    Kenneth S. Collins;Michael Rice;John Trow;Douglas Buchberger

  • Dual mode inductively coupled plasma reactor with adjustable phase coil assembly

    Samer Banna;Valentin N. Todorow;Kenneth S. Collins;Andrew Nguyen

  • Plasma immersion ion implantation process

    Kenneth S. Collins;Hiroji Hanawa;Kartik Ramaswamy;Andrew Nguyen

  • Low temperature plasma deposition process for carb

    Ramaswamy Kartik;Hanawa Hiroji;Gallo Biagio;Collins Kenneth S

  • Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S. Collins

  • Copper barrier reflow process employing high speed optical annealing

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S Collins

  • Plasma-resistant corrosive ceramic plasma with controlled electrical resistivity

    Sun Jennifer Y;Collins Kenneth S;Duan Ren-Guan;Thach Senh

  • Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners

    Kenneth Collins;Michael Rice;Douglas Buchberger;Craig Roderick

  • Semiconductor substrate process using an optically writable carbon-containing mask

    Kartik Ramaswamy;Hiroji Hanawa;Biagio Gallo;Kenneth S. Collins

  • A semiconductor junction formation process includi

    Ramaswamy Kartik;Hanawa Hiroji;Gallo Biagio;Collins Kenneth S

Frequent Co-Authors

Kartik Ramaswamy
Kartik Ramaswamy Applied Materials (United States)
Shahid Rauf
Shahid Rauf Applied Materials (United States)
Andrew Nguyen
Andrew Nguyen Applied Materials (United States)
Hiroji Hanawa
Hiroji Hanawa Applied Materials (United States)
John M. White
John M. White Applied Materials (United States)
Mei Chang
Mei Chang Applied Materials (United States)
Srinivas D. Nemani
Srinivas D. Nemani Applied Materials (United States)
Ellie Yieh
Ellie Yieh Applied Materials (United States)
Ajay Kumar
Ajay Kumar Hong Kong Polytechnic University

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