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D-Index & Metrics

Materials Science

D-Index
55
Citations
12930
World Ranking
8515
National Ranking
2098

Overview

Mei Chang is affiliated with Applied Materials in the United States and specializes in neuroscience and molecular biology research. Their work spans several interconnected fields including Neuroscience, Biochemistry, Genetics, and Molecular Biology, with particular emphasis on molecular biology and cellular and molecular neuroscience.

Their research topics cover a broad spectrum within neuroscience and molecular biology, including:

  • Neurogenesis and neuroplasticity mechanisms
  • RNA research and splicing
  • RNA modifications and cancer
  • Cancer-related molecular mechanisms research
  • Neuroscience and neuropharmacology research
  • Axon guidance and neuronal signaling
  • Pluripotent stem cells research

Mei Chang has contributed to multiple peer-reviewed publications in notable scientific venues. Some recent papers authored or co-authored include:

  • STAU2 binds a complex RNA cargo that changes temporally with production of diverse intermediate progenitor cells during mouse corticogenesis, 2021, published in Development
  • St18 specifies globus pallidus projection neuron identity in MGE lineage, 2022, published in Nature Communications
  • St18 specifies globus pallidus projection neuron identity in MGE lineage, 2021, published in bioRxiv (Cold Spring Harbor Laboratory)

Their frequent co-authors indicating collaborative research efforts include Luke F. Nunnelly, Dylan I. Lee, Guoqiang Gu, Vilas Menon, and Edmund Au, each having co-authored multiple papers with Mei Chang.

Mei Chang's research contributes to understanding complex molecular and cellular mechanisms in neural development, RNA biology, and cancer-related pathways. Their multidisciplinary focus integrates developmental neuroscience and molecular genetics applying to both fundamental and translational biomedical research contexts.

Best Publications

  • Chemical vapor deposition chamber

    Ashok Sinha;Mei Chang;Ilya Perlov;Karl Littau

  • Gas delivery apparatus for atomic layer deposition

    Ling Chen;Vincent Ku;Dien-Yeh Wu;Hua Chung

  • PECVD of compounds of silicon from silane and nitrogen

    Mei Chang;David N. K. Wang;John M. White;Dan Maydan

  • Multi chamber processing system

    Chien-Teh Kao;Jing-Pei Connie Chou;Chiukin (Steven) Lai;Salvador P. Umotoy

  • Copper interconnect barrier layer structure and formation method

    Ling Chen;Seshadri Ganguli;Christophe Marcadal;Wei Cao

  • Reactor for chemical vapor deposition of titanium

    Salvador Umotoy;Anh N. Nguyen;Truc T. Tran;Lawrence Chung Lai Lei

  • Integration of ALD tantalum nitride for copper metallization

    Hua Chung;Nirmalya Maity;Jick Yu;Roderick Craig Mosely

  • An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber

    Chien-Teh Kao;Jing-Pei Chou;Salvador P. Umotoy;Mei Chang

  • Methods of thin film process

    Nitin K. Ingle;Jing Tang;Yi Zheng;Zheng Yuan

  • Process for forming cobalt and cobalt silicide materials in tungsten contact applications

    Seshadri Ganguli;Sang-Ho Yu;See-Eng Phan;Mei Chang

  • Apparatus for substrate processing with improved throughput and yield

    Jun Zhao;Ashok Sinha;Avi Tepman;Mei Chang

  • Passivation layer formation by plasma clean process to reduce native oxide growth

    Haichun Yang;Xin Liang Lu;Chien-Teh Kao;Mei Chang

  • Ruthenium layer formation for copper film deposition

    Mei Chang;Seshadri Ganguli;Nirmalya Maity

  • Selective etching of silicon nitride

    Xinliang Lu;Haichun Yang;Zhenbin Ge;Nan Lu

  • Apparatus for generating plasma by RF power

    Yu Chang;Gwo-Chuan Tzu;Salvador Umotoy;Chien-Teh Kao

  • Reactor for chemical vapor deposition

    Keith Koai;Mark Johnson;Mei Chang;Lawrence Chung Lai Lei

  • Method of TiSiN deposition using a chemical vapor deposition (CVD) process

    Jing-Pei Chou;Chien-Teh Kao;Chiukin Steven Lai;Roderick Mosely

  • Plasma treatment of a titanium nitride film formed by chemical vapor deposition

    Shulin Wang;Ming Xi;Zvi Lando;Mei Chang

  • Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects

    Chien-Teh Kao;Xinliang Lu;Haichun Yang;Zhenbin Ge

  • Process for forming cobalt-containing materials

    Seshadri Ganguli;Schubert S. Chu;Mei Chang;Sang-Ho Yu

Frequent Co-Authors

John M. White
John M. White Applied Materials (United States)
Kenneth S. Collins
Kenneth S. Collins Applied Materials (United States)
Nitin K. Ingle
Nitin K. Ingle Applied Materials (United States)
Gurtej S. Sandhu
Gurtej S. Sandhu Micron (United States)
Li-Qun Xia
Li-Qun Xia Applied Materials (United States)
Brian E. Hayden
Brian E. Hayden University of Southampton

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