Mei Chang mainly investigates Substrate, Optoelectronics, Layer, Chemical vapor deposition and Composite material. His Substrate research integrates issues from Electrical engineering and Analytical chemistry. His research integrates issues of Inorganic chemistry and Deposition process in his study of Layer.
His research in Inorganic chemistry intersects with topics in Nitrogen trifluoride, Chemical engineering, Nitride and Deposition. His work carried out in the field of Chemical vapor deposition brings together such families of science as Choke, Wafer, Structural engineering and Pedestal. His research investigates the link between Composite material and topics such as Electronic engineering that cross with problems in Inner diameter, Copper interconnect and Tin.
His scientific interests lie mostly in Optoelectronics, Wafer, Substrate, Layer and Chemical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Electronic engineering, Plasma etching and Electrical engineering. The Wafer study combines topics in areas such as Chemical vapor deposition, Deposition, Pedestal, Semiconductor and Susceptor.
The Substrate study which covers Analytical chemistry that intersects with Purge and Plasma-enhanced chemical vapor deposition. His Layer research incorporates themes from Inorganic chemistry and Metallurgy, Tungsten. His Chemical engineering research includes themes of Silicon, Cobalt, Metal, Dielectric and Substrate.
Mei Chang mainly focuses on Substrate, Chemical engineering, Composite material, Metal and Substrate. His work in Substrate addresses issues such as Atomic layer deposition, which are connected to fields such as Deposition rate. His Chemical engineering research is multidisciplinary, incorporating perspectives in Cobalt, Chemical vapor deposition and Deposition.
The various areas that Mei Chang examines in his Metal study include Layer, Optoelectronics and Deposition. His research on Layer often connects related topics like Tungsten. The concepts of his Substrate study are interwoven with issues in Titanium and Argon.
His primary areas of investigation include Substrate, Metal, Inorganic chemistry, Atomic layer deposition and Layer. His Substrate research is classified as research in Composite material. His work deals with themes such as Substrate and Low temperature deposition, which intersect with Metal.
His Inorganic chemistry research integrates issues from Oxide, Deposition, Dielectric surface and Reactive gas. His Atomic layer deposition study integrates concerns from other disciplines, such as Blocking layer, Optoelectronics, Work function and Threshold voltage. As a part of the same scientific study, Mei Chang usually deals with the Layer, concentrating on Tungsten and frequently concerns with Inert gas, Etching and Analytical chemistry.
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Chemical vapor deposition chamber
Ashok Sinha;Mei Chang;Ilya Perlov;Karl Littau.
Gas delivery apparatus for atomic layer deposition
Ling Chen;Vincent Ku;Dien-Yeh Wu;Hua Chung.
Thermally floating pedestal collar in a chemical vapor deposition chamber
윤 쟈오;아쇼크 신하;아비 테프만;메이 챵.
Inlet manifold and methods for increasing gas dissociation and for pecvd of dielectric films
Mei Chang;David N. K. Wang;John M. White;Dan Maydan.
Copper interconnect barrier layer structure and formation method
Ling Chen;Seshadri Ganguli;Christophe Marcadal;Wei Cao.
Apparatus and method for hybrid chemical processing
빈센트 쿠;메이 창;디엔-예 유.
Integration of ALD tantalum nitride for copper metallization
Hua Chung;Nirmalya Maity;Jick Yu;Roderick Craig Mosely.
An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
Chien-Teh Kao;Jing-Pei Chou;Salvador P. Umotoy;Mei Chang.
In-situ dry clean chamber for front end of line fabrication
Chien-Teh Kao;Jing-Pei Connie Chou;Chiukin (Steven) Lai;Salvador P. Umotoy.
Methods of thin film process
Nitin K. Ingle;Jing Tang;Yi Zheng;Zheng Yuan.
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