World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
32
Citations
5215
World Ranking
9530
National Ranking
2692

Overview

Garo J. Derderian is affiliated with Intel in the United States. Their career is associated with one of the leading technology companies globally, reflecting a professional engagement with cutting-edge developments in computing and technology sectors.

Though specific details about their research outputs, including recent papers, are not available, the affiliation with Intel suggests involvement in applied research or technological innovation related to computing hardware, software, or integrated systems.

The absence of listed frequent co-authors indicates that there is no publicly available information detailing collaborative partnerships commonly associated with their work. Similarly, there are no records of frequent publication venues, which may suggest that their contributions are not primarily captured in conventional academic publishing channels or that such data is not publicly accessible.

No book publications have been documented, implying no known authored or edited books in the public record linked to this scientist. Likewise, specific fields, subfields, or main topics of study have not been detailed, limiting insight into their precise areas of expertise or research focus within the broader realm of technology and computing.

There is no information about awards or recognitions, which means there are no currently recorded honors associated with their professional achievements.

Overall, Garo J. Derderian's professional profile indicates a researcher or technologist connected to an established technology firm, but with limited publicly available data on publications, research collaboration, or specialized study areas. The available information primarily focuses on institutional affiliation rather than individual academic contributions.

Best Publications

  • Atomic layer deposition and conversion

    Garo J. Derderian;Gurtej Singh Sandhu

  • Transistor with reduced depletion field width

    Shuang Meng;Garo J. Derderian;Gurtej S. Sandhu

  • Apparatus for improved delivery of metastable species

    Garo J. Derderian;Gurtej S. Sandhu

  • Apparatus and method for depositing materials onto microelectronic workpieces

    Craig M. Carpenter;Allen P. Mardian;Ross S. Dando;Kimberly R. Tschepen

  • Versatile atomic layer deposition apparatus

    Gurtej Sandhu;Garo Derderian

  • Method of increasing deposition rate of silicon dioxide on a catalyst

    Chris W. Hill;Garo J. Derderian

  • Methods for forming and integrated circuit structures containing ruthenium containing layers

    Vishnu K. Agarwal;Garo Derderian;Gurtej S. Sandhu;Weimin M. Li

  • Film composition deposited on substrate, and its semiconductor device

    Garo J Derderian;Gurtej Sandhu;ジェイ.デルダリアン ガロ;サンジュ グルテジ

  • Floating-gate memory cell and memory device and electronic system therewith

    Garo Derderian;Nirmal Ramaswamy

  • Capacitor fabrication methods and capacitor constructions

    Garo J. Derderian;Gurtej S. Sandhu

  • Manifold assembly for feeding reactive precursors to substrate processing chambers

    Ross Dando;Craig Carpenter;Garo Derderian

  • Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell

    Vishnu K. Agarwal;Garo J. Derderian;Gurtej S. Sandhu

  • Preheating of chemical vapor deposition precursors

    Garo J. Derderian;Gordon Morrison

  • Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same

    H. Montgomery Manning;Thomas Rueckes;Claude L. Bertin;Jonathan W. Ward

  • Insitu post atomic layer deposition destruction of active species

    Demetrius Sarigiannis;Shuang Meng;Garo J. Derderian

  • Deposition methods and apparatuses providing surface activation

    Gurtej S. Sandhu;Garo J. Derderian;Guy T. Blalock;Terry L. Gilton

  • Methods for forming rough ruthenium-containing layers and structures/methods using same

    Garo Derderian;Vishnu K. Agarwal

  • Integrated circuit with a capacitor comprising an electrode

    Vishnu K. Agarwal;Garo J. Derderian;F. Daniel Gealy

  • Deposition chamber surface enhancement and resulting deposition chambers

    Garo J. Derderian;Gurtej S. Sandhu;Ross S. Dando;Craig M. Carpenter

  • Method and apparatus for delivering precursors

    Ross Dando;Craig Carpenter;Allen Mardian;Garo Derderian

Frequent Co-Authors

Gurtej S. Sandhu
Gurtej S. Sandhu Micron (United States)
Kyle K. Kirby
Kyle K. Kirby Micron (United States)
Arup Bhattacharyya
Arup Bhattacharyya Micron (United States)
Thomas Rueckes
Thomas Rueckes NANTERO INC

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Garo J. Derderian

Trending Scientists

Recently Published Articles