The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Juan Bisquert sits on this spectrum.
This scientist: 492 publications — 86th percentile
86% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Juan Bisquert sits on this spectrum.
This scientist: 130 D-Index — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Juan Bisquert is affiliated with the Universitat Politècnica de València in Spain and has a research focus spanning engineering and materials science, particularly within electrical and electronic engineering, polymers and plastics, and materials chemistry. Their work intersects with neuroscience and neural engineering fields as well.
The main areas of study for their research include advanced memory and neural computing, perovskite materials and applications, conducting polymers and their applications, neuroscience and neural engineering, neural dynamics and brain function, photoreceptor and optogenetics research, and chalcogenide semiconductor thin films.
Juan Bisquert has collaborated frequently with a group of co-authors, among whom are Antonio Guerrero, Agustín Bou, Enrique H. Balaguera, Karl Cedric Gonzales, and Patricio Ramírez. These collaborations reflect a sustained focus on topics related to materials science and energy applications.
The scientist has published extensively in several key venues, including:
Some recent papers authored or co-authored by Juan Bisquert are:
The research outputs show a strong emphasis on the study and application of perovskite materials within energy and photovoltaic contexts, with investigations covering both theoretical and experimental dimensions of materials science and device physics.
Jon M. Azpiroz;Edoardo Mosconi;Juan Bisquert;Juan Bisquert;Filippo De Angelis
Juan Bisquert
Arie Zaban;Miri Greenshtein;Juan Bisquert
Francisco Fabregat-Santiago;Juan Bisquert;Germa Garcia-Belmonte;Gerrit Boschloo
Francisco Fabregat-Santiago;Germà Garcia-Belmonte;Iván Mora-Seró;Juan Bisquert
Qing Wang;Seigo Ito;Michael Grätzel;Francisco Fabregat-Santiago
Jacob Tse-Wei Wang;James M. Ball;Eva M. Barea;Antonio Abate
Benjamin Klahr;Sixto Gimenez;Francisco Fabregat-Santiago;Thomas Hamann
Francisco Fabregat-Santiago;Juan Bisquert;Emilio Palomares;Luis Otero
Hui-Seon Kim;Ivan Mora-Sero;Victoria Gonzalez-Pedro;Francisco Fabregat-Santiago
Victoria Gonzalez-Pedro;Emilio J. Juarez-Perez;Waode-Sukmawati Arsyad;Eva M. Barea
Juan Bisquert;Arie Zaban;Miri Greenshtein;Iván Mora-Seró
Juan Bisquert;Francisco Fabregat-Santiago;Iván Mora-Seró;Germà Garcia-Belmonte
Iván Mora-Seró;Sixto Giménez;Francisco Fabregat-Santiago;Roberto Gómez
Yu Bai;Iván Mora-Seró;Filippo De Angelis;Juan Bisquert
Juan Bisquert;David Cahen;Gary Hodes;and Sven Rühle
Emilio J. Juarez-Perez;Rafael S. Sanchez;Laura Badia;Germá Garcia-Belmonte
Juan Bisquert
Benjamin Klahr;Sixto Gimenez;Francisco Fabregat-Santiago;Juan Bisquert
Rafael S. Sanchez;Victoria Gonzalez-Pedro;Jin-Wook Lee;Nam-Gyu Park
Victoria Gonzalez-Pedro;Emilio J. Juarez-Perez;Waode-Sukmawati Arsyad;Eva M. Barea
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