William J. Gallagher

Research.com Recognitions

• 2003 - IEEE Fellow For contributions to the development of oxide-barrier tunnel junctions for superconducting and magnetic device applications.
• 1991 - Fellow of American Physical Society (APS) Citation For his contributions to superconductivity and thinfilm superconducting materials and devices

Overview

Best Publications

• Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

  S. S. P. Parkin;K. P. Roche;M. G. Samant;P. M. Rice

  1649
  Citations

• Experimental evidence for vortex-glass superconductivity in Y-Ba-Cu-O.

  R. H. Koch;V. Foglietti;W. J. Gallagher;G. Koren

  1228
  Citations

• Magnetic response of a single, isolated gold loop.

  V. Chandrasekhar;Richard A. Webb;M. J. Brady;M. B. Ketchen

  1047
  Citations

• Direct observation of electronic anisotropy in single-crystal Y1Ba2Cu3O7-x.

  T. R. Dinger;T. K. Worthington;W. J. Gallagher;R. L. Sandstrom

  836
  Citations

• Anisotropic Nature of High-Temperature Superconductivity in Single-Crystal Y 1 Ba 2 Cu 3 O 7 − x

  T. K. Worthington;W. J. Gallagher;T. R. Dinger

  626
  Citations

• Microstructured magnetic tunnel junctions (invited)

  W. J. Gallagher;S. S. P. Parkin;Yu Lu;X. P. Bian

  619
  Citations

• Magnetic tunnel junction device with antiferromagnetically coupled pinned layer

  William Joseph Gallagher;Stuart Stephen Papworth Parkin;John Casimir Slonczewski;Jonathan Zanhong Sun

  585
  Citations

• Development of the magnetic tunnel junction MRAM at IBM: from first junctions to a 16-Mb MRAM demonstrator chip

  W. J. Gallagher;S. S. P. Parkin

  515
  Citations

• Observation of large low‐field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites

  J. Z. Sun;W. J. Gallagher;P. R. Duncombe;L. Krusin‐Elbaum

  502
  Citations

• Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

  M. Gajek;J. J. Nowak;J. Z. Sun;P. L. Trouilloud

  355
  Citations

• Voltage biasing for magnetic ram with magnetic tunnel memory cells

  William Joseph Gallagher;Roy Edwin Scheuerlein

  279
  Citations

• A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

  R. Scheuerlein;W. Gallagher;S. Parkin;A. Lee

  272
  Citations

• Magnetization Reversal in Micron-Sized Magnetic Thin Films

  R. H. Koch;J. G. Deak;D. W. Abraham;P. L. Trouilloud

  267
  Citations

• Thermally assisted magnetization reversal in submicron-sized magnetic thin films

  R. H. Koch;G. Grinstein;G. A. Keefe;Yu Lu

  264
  Citations

• Growth and giant magnetoresistance properties of La‐deficient LaxMnO3−δ (0.67≤x≤1) films

  A. Gupta;T. R. McGuire;P. R. Duncombe;M. Rupp

  254
  Citations

• Colossal magnetoresistance of 1 000 000‐fold magnitude achieved in the antiferromagnetic phase of La1−xCaxMnO3

  Guo‐Qiang Gong;Chadwick Canedy;Gang Xiao;Jonathan Z. Sun

  248
  Citations

• Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

  R. L. Sandstrom;E. A. Giess;W. J. Gallagher;A. Segmüller

  246
  Citations

• Néel “orange-peel” coupling in magnetic tunneling junction devices

  B. D. Schrag;A. Anguelouch;S. Ingvarsson;Gang Xiao

  234
  Citations

• Ambegaokar-Baratoff-Ginzburg-Landau crossover effects on the critical current density of granular superconductors.

  John R. Clem;B. Bumble;S. I. Raider;W. J. Gallagher

  224
  Citations

• Effect of subvolume excitation and spin-torque efficiency on magnetic switching

  J. Z. Sun;R. P. Robertazzi;J. Nowak;P. L. Trouilloud

  212
  Citations