World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
64
Citations
18859
World Ranking
5793
National Ranking
67

William J. Gallagher publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where William J. Gallagher sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 227 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

William J. Gallagher D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where William J. Gallagher sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2003 - IEEE Fellow For contributions to the development of oxide-barrier tunnel junctions for superconducting and magnetic device applications.
  • 1991 - Fellow of American Physical Society (APS) Citation For his contributions to superconductivity and thinfilm superconducting materials and devices

Overview

William J. Gallagher is affiliated with Taiwan Semiconductor Manufacturing Company (Taiwan), located in Taiwan. Their career is marked by notable recognitions in the field of superconductivity and thin-film superconducting materials.

Gallagher was awarded the IEEE Fellow distinction in 2003 for contributions to the development of oxide-barrier tunnel junctions for superconducting and magnetic device applications.

Earlier, in 1991, they were named a Fellow of the American Physical Society (APS) for work related to superconductivity and thin-film superconducting materials and devices.

Best Publications

  • Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

    S. S. P. Parkin;K. P. Roche;M. G. Samant;P. M. Rice

  • Experimental evidence for vortex-glass superconductivity in Y-Ba-Cu-O.

    R. H. Koch;V. Foglietti;W. J. Gallagher;G. Koren

  • Magnetic response of a single, isolated gold loop.

    V. Chandrasekhar;Richard A. Webb;M. J. Brady;M. B. Ketchen

  • Direct observation of electronic anisotropy in single-crystal Y1Ba2Cu3O7-x.

    T. R. Dinger;T. K. Worthington;W. J. Gallagher;R. L. Sandstrom

  • Anisotropic Nature of High-Temperature Superconductivity in Single-Crystal Y 1 Ba 2 Cu 3 O 7 − x

    T. K. Worthington;W. J. Gallagher;T. R. Dinger

  • Microstructured magnetic tunnel junctions (invited)

    W. J. Gallagher;S. S. P. Parkin;Yu Lu;X. P. Bian

  • Magnetic tunnel junction device with antiferromagnetically coupled pinned layer

    William Joseph Gallagher;Stuart Stephen Papworth Parkin;John Casimir Slonczewski;Jonathan Zanhong Sun

  • Development of the magnetic tunnel junction MRAM at IBM: from first junctions to a 16-Mb MRAM demonstrator chip

    W. J. Gallagher;S. S. P. Parkin

  • Observation of large low‐field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites

    J. Z. Sun;W. J. Gallagher;P. R. Duncombe;L. Krusin‐Elbaum

  • Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

    M. Gajek;J. J. Nowak;J. Z. Sun;P. L. Trouilloud

  • Voltage biasing for magnetic ram with magnetic tunnel memory cells

    William Joseph Gallagher;Roy Edwin Scheuerlein

  • A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

    R. Scheuerlein;W. Gallagher;S. Parkin;A. Lee

  • Magnetization Reversal in Micron-Sized Magnetic Thin Films

    R. H. Koch;J. G. Deak;D. W. Abraham;P. L. Trouilloud

  • Thermally assisted magnetization reversal in submicron-sized magnetic thin films

    R. H. Koch;G. Grinstein;G. A. Keefe;Yu Lu

  • Growth and giant magnetoresistance properties of La‐deficient LaxMnO3−δ (0.67≤x≤1) films

    A. Gupta;T. R. McGuire;P. R. Duncombe;M. Rupp

  • Colossal magnetoresistance of 1 000 000‐fold magnitude achieved in the antiferromagnetic phase of La1−xCaxMnO3

    Guo‐Qiang Gong;Chadwick Canedy;Gang Xiao;Jonathan Z. Sun

  • Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    R. L. Sandstrom;E. A. Giess;W. J. Gallagher;A. Segmüller

  • Néel “orange-peel” coupling in magnetic tunneling junction devices

    B. D. Schrag;A. Anguelouch;S. Ingvarsson;Gang Xiao

  • Ambegaokar-Baratoff-Ginzburg-Landau crossover effects on the critical current density of granular superconductors.

    John R. Clem;B. Bumble;S. I. Raider;W. J. Gallagher

  • Effect of subvolume excitation and spin-torque efficiency on magnetic switching

    J. Z. Sun;R. P. Robertazzi;J. Nowak;P. L. Trouilloud

Frequent Co-Authors

Stuart S. P. Parkin
Stuart S. P. Parkin Max Planck Institute of Microstructure Physics
M. B. Ketchen
M. B. Ketchen IBM (United States)
Robert Benjamin Laibowitz
Robert Benjamin Laibowitz IBM (United States)
Lubomyr T. Romankiw
Lubomyr T. Romankiw IBM (United States)
Daniel R. Grischkowsky
Daniel R. Grischkowsky Oklahoma State University
Solomon Assefa
Solomon Assefa IBM (United States)
Kenneth L. Shepard
Kenneth L. Shepard Columbia University
Andrew J. Kellock
Andrew J. Kellock IBM (United States)
Naomi J. Halas
Naomi J. Halas Rice University
Mahesh G. Samant
Mahesh G. Samant IBM (United States)

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