World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 66 1172 1117 486 449 171 13774

Roy E. Scheuerlein publications per year

The chart shows the history of publications by Roy E. Scheuerlein between 1980 and 2016, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Roy E. Scheuerlein published across 37 years, from 1980 to 2016, averaging 5.5 papers a year. Output peaked at 36 publications in 2006. 3 of the 202 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1980 to 2016. Vertical axis: number of publications, 0 to 36. Peak 36 publications in 2006. 1980: 1 publication 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 1 publication 1985: 1 publication 1986: 1 publication 1987: 0 publications 1988: 0 publications 1989: 2 publications 1990: 0 publications 1991: 1 publication 1992: 2 publications 1993: 0 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 2 publications 1999: 1 publication 2000: 1 publication 2001: 8 publications 2002: 12 publications 2003: 7 publications 2004: 12 publications 2005: 4 publications 2006: 36 publications 2007: 19 publications 2008: 18 publications 2009: 17 publications 2010: 16 publications 2011: 17 publications 2012: 7 publications 2013: 9 publications 2014: 4 publications 2015: 2 publications 2016: 1 publication
1980 2016

202 publications in total across all disciplines

View publications per year as a table
Roy E. Scheuerlein: publications per year, 1980 to 2016
Year Publications
1980 1
1981 0
1982 0
1983 0
1984 1
1985 1
1986 1
1987 0
1988 0
1989 2
1990 0
1991 1
1992 2
1993 0
1994 0
1995 0
1996 0
1997 0
1998 2
1999 1
2000 1
2001 8
2002 12
2003 7
2004 12
2005 4
2006 36
2007 19
2008 18
2009 17
2010 16
2011 17
2012 7
2013 9
2014 4
2015 2
2016 1
Total 202
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Roy E. Scheuerlein publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Roy E. Scheuerlein sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 171 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 171
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Roy E. Scheuerlein D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Roy E. Scheuerlein sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 66 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64 66
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

What is he best known for?

The fields of study he is best known for:

  • Operating system
  • Electrical engineering
  • Voltage

Roy E. Scheuerlein spends much of his time researching Memory cell, Computer hardware, Optoelectronics, NAND gate and Electronic engineering. His Memory cell research is multidisciplinary, relying on both Registered memory, Sense amplifier, Computer memory and Non-volatile memory. His Computer hardware research incorporates themes from Bit line and Reference current.

The Optoelectronics study combines topics in areas such as Electronic circuit and Antifuse, Voltage. His work deals with themes such as Memory array and String, which intersect with NAND gate. Roy E. Scheuerlein has researched Electronic engineering in several fields, including Power consumption and Semiconductor.

His most cited work include:

  • Method of making three dimensional NAND memory (297 citations)
  • NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same (289 citations)
  • Method for fabricating programmable memory array structures incorporating series-connected transistor strings (251 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Memory cell, Electrical engineering, Computer hardware, Optoelectronics and Non-volatile memory. His Memory cell research includes themes of Electronic engineering, State, Electrical resistivity and conductivity and Substrate. His Electronic engineering research focuses on Word and how it connects with Electronic circuit, Line and Line.

His research investigates the connection between Computer hardware and topics such as NAND gate that intersect with problems in String. His Optoelectronics research is multidisciplinary, incorporating elements of Layer, Thin-film transistor and Bit line. His Non-volatile memory study combines topics from a wide range of disciplines, such as Substrate, Bandwidth and Computer data storage.

He most often published in these fields:

  • Memory cell (38.86%)
  • Electrical engineering (33.18%)
  • Computer hardware (31.75%)

What were the highlights of his more recent work (between 2009-2015)?

  • Non-volatile memory (27.49%)
  • Optoelectronics (28.91%)
  • Electrical engineering (33.18%)

In recent papers he was focusing on the following fields of study:

Non-volatile memory, Optoelectronics, Electrical engineering, Voltage and Memory cell are his primary areas of study. Non-volatile memory is a subfield of Computer hardware that he explores. His Optoelectronics research integrates issues from Layer, Substrate, Thin-film transistor and Electrical conductor.

His Voltage study incorporates themes from Electronic engineering, Electrical resistance and conductance and State. His study focuses on the intersection of Electronic engineering and fields such as Diode with connections in the field of Low voltage. His Memory cell research incorporates elements of Reset, Semiconductor memory, Pulse and Line.

Between 2009 and 2015, his most popular works were:

  • A 130.7mm 2 2-layer 32Gb ReRAM memory device in 24nm technology (102 citations)
  • A 130.7- $\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology (98 citations)
  • Programming reversible resistance switching elements (96 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Operating system
  • Voltage

His scientific interests lie mostly in Voltage, Electrical engineering, Electronic engineering, Non-volatile memory and Optoelectronics. His research in Voltage intersects with topics in Word, State, Electrical resistivity and conductivity and Current. His research in Sense amplifier and Electrical conductor are components of Electrical engineering.

His studies in Electronic engineering integrate themes in fields like Diode, Line and Memory cell. His study on Non-volatile memory is covered under Computer hardware. His Optoelectronics research is multidisciplinary, incorporating perspectives in Line, Layer, Electrical resistance and conductance, Bit line and Pillar.

Best Publications

  • NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same

    En-Hsing Chen;Andrew J. Walker;Roy E. Scheuerlein;Sucheta Nallamothu

  • Method for fabricating programmable memory array structures incorporating series-connected transistor strings

    Andrew Walker;En-Hsing Chen;Sucheta Nallamothu;Roy Scheuerlein

  • Integrated circuit including memory array incorporating multiple types of NAND string structures

    Luca G. Fasoli;Roy E. Scheuerlein

  • Word line arrangement having segmented word lines

    Roy E. Scheuerlein

  • Memory array incorporating mirrored NAND strings and non-shared global bit lines within a block

    Luca G. Fasoli;Roy E. Scheuerlein;En-Hsing Chen;Sucheta Nallamothu

  • Three dimensional NAND memory

    Nima Mokhlesi;Roy Scheuerlein

  • NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same

    En-Hsing Chen;Andrew J. Walker;Roy E. Scheuerlein;Sucheta Nallamothu

  • Method for programming a three-dimensional memory array incorporating serial chain diode stack

    Bendik Kleveland;Roy E. Scheuerlein

  • Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance

    Tanmay Kumar;S. Brad Herner;Roy E Scheuerlein;Christopher J Petti

  • Three-dimensional memory device incorporating segmented bit line memory array

    Roy E. Scheuerlein;Alper Ilkbahar;Luca G. Fasoli

  • NICHTFLÜCHTIGE SPEICHERZELLE MIT EINEM SCHALTBAREN WIDERSTAND UND TRANSISTOR

    Scheuerlein Roy E

  • Non-volatile memory having 3d array of read/write elements with low current structures and methods thereof

    Scheuerlein Roy E

  • Multiple twin cell non-volatile memory array and logic block structure and method therefor

    Roy E. Scheuerlein;Luca Fasoli;Mark G. Johnson

  • 512-Mb PROM with a three-dimensional array of diode/antifuse memory cells

    M. Johnson;A. Al-Shamma;D. Bosch;M. Crowley

  • A 130.7- $\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

    Tz-yi Liu;Tian Hong Yan;Roy Scheuerlein;Yingchang Chen

  • Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same

    Roy E Scheuerlein;Christopher Petti;Andrew J Walker;En-Hsing Chen

  • Method for reading a multi-level passive element memory cell array

    Roy E. Scheuerlein;Tyler J. Thorp;Luca G. Fasoli

  • Nonvolatile rewriteable memory cell comprising a resistivity- switching oxide or nitride and an antifuse

    Roy E. Scheuerlein

  • A 130.7mm 2 2-layer 32Gb ReRAM memory device in 24nm technology

    Tz-Yi Liu;Tian Hong Yan;R. Scheuerlein;Yingchang Chen

  • 512 Mb PROM with 8 layers of antifuse/diode cells

    M. Crowley;A. Al-Shamma;D. Bosch;M. Farmwald

Frequent Co-Authors

Luca G. Fasoli
Luca G. Fasoli Western Digital (United States)
Christopher J. Petti
Christopher J. Petti Western Digital (United States)
Nima Mokhlesi
Nima Mokhlesi Western Digital (United States)
Thomas H. Lee
Thomas H. Lee Stanford University
Eliyahou Harari
Eliyahou Harari Western Digital (United States)

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