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Thomas Rueckes

Thomas Rueckes

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
7921
World Ranking
4827
National Ranking
1688

Overview

Thomas Rueckes is affiliated with NANTERO INC in the United States. Their research primarily focuses on the field of Materials Science, with particular emphasis on Materials Chemistry. The main topics explored by Thomas Rueckes include Carbon Nanotubes in Composites, Graphene research and applications, and Thermal properties of materials.

The scientist has published work in the following venue:

  • physica status solidi (RRL) - Rapid Research Letters

One example of their recent research output is a paper titled Atomistic Modeling of the Electrical Conductivity of Single-Walled Carbon Nanotube Junctions, published in 2022 in physica status solidi (RRL) - Rapid Research Letters.

Thomas Rueckes has collaborated with several co-authors throughout their research activities. Frequent co-authors include:

  • Thomas R. Durrant
  • Al-Moatasem El-Sayed
  • David Gao
  • G. Bersuker
  • Alexander L. Shluger

Best Publications

  • Electromechanical memory array using nanotube ribbons and the production method thereof

    Thomas Rueckes

  • Devices having vertically-disposed nanofabric articles and methods of making the same

    Venkatachalam C. Jaiprakash;Jonathan W. Ward;Thomas Rueckes;Brent M. Segal

  • Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

    Claude L. Bertin;Thomas Rueckes;X. M. H. Huang;Ramesh Sivarajan

  • Sensor platform using a non-horizontally oriented nanotube element

    Brent M. Segal;Thomas Rueckes;Bernhard Vogeli;Darren K. Brock

  • Nanotube-on-gate fet structures and applications

    Thomas Rueckes;Brent M. Segal;Bernhard Vogeli;Darren K. Brock

  • Hybrid circuit having nanotube memory cells

    Brent M. Segal;Darren K. Brock;Thomas Rueckes

  • Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

    Claude L. Bertin;Thomas Rueckes;Brent M. Segal;Bernhard Vogeli

  • Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

    Claude L. Bertin;X. M. Henry Huang;Thomas Rueckes;Ramesh Sivarajan

  • Nanotube device structure and methods of fabrication

    Claude L. Bertin;Thomas Rueckes;Brent M. Segal

  • Field effect devices having a gate controlled via a nanotube switching element

    Claude L. Bertin;Thomas Rueckes;Brent M. Segal

  • Non-volatile-shadow latch using a nanotube switch

    Claude L. Bertin;Frank Guo;Thomas Rueckes;Steven L. Konsek

  • Two-terminal nanotube devices and systems and methods of making same

    Frank Guo;Mitchell Meinhold;Steven L. Konsek;Thomas Rueckes

  • Nanotube-based switching elements

    Claude L. Bertin;Thomas Rueckes;Brent M. Segal

  • Spin-coatable liquid for formation of high purity nanotube films

    Rahul Sen;Ramesh Sivarajan;Thomas Rueckes;Brent M Segal

  • Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches

    Claude L. Bertin;Brent M. Segal;Thomas Rueckes;Jonathan W. Ward

  • Memory arrays using nanotube articles with reprogrammable resistance

    Claude L. Bertin;Frank Guo;Thomas Rueckes;Steven L. Konsek

  • Patterned nanoscopic articles and methods of making the same

    Brent M. Segal;Thomas Rueckes;Claude L. Bertin

  • High purity nanotube fabrics and films

    Rahul Sen;Ramesh Sivarajan;Thomas Rueckes;Brent M. Segal

  • NRAM bit selectable two-device nanotube array

    Thomas Rueckes;Brent M. Segal;Bernhard Vogeli;Darren K. Brock

  • Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same

    H. Montgomery Manning;Thomas Rueckes;Claude L. Bertin;Jonathan W. Ward

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