World's Best Scientists 2026 revealed!
Charles W. Koburger

Charles W. Koburger

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
5465
World Ranking
5345
National Ranking
1844

Charles W. Koburger publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Charles W. Koburger sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 160 publications — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Charles W. Koburger D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Charles W. Koburger sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Charles W. Koburger is affiliated with IBM in the United States. Their professional work is carried out primarily within this organization.

There are no recent papers listed under their name, and no frequent co-authors or common publication venues have been identified. Similarly, there is no information available regarding book publications or specific awards.

The data does not include detailed information about the main fields of study, subfields, or specific topics related to Koburger's research. As a result, further details on these aspects cannot be provided.

Best Publications

  • Method for manufacturing a multi-level interconnect structure

    David Vaclav Horak;Charles William Koburger;Peter H. Mitchell;Larry Alan Nesbit

  • Forming capping layer over metal wire structure using selective atomic layer deposition

    Toshiharu Furukawa;Steven J. Holmes;David V. Horak;Charles W. Koburger

  • MOVEMENT OF LENS FOR IMMERSION OPTICAL LITHOGRAPHY

    Hakey Mark Charles;Horak David;Koburger Charles W;Mitchell Peter H

  • Liquid-filled balloons for immersion lithography

    Mark C. Hakey;David V. Horak;Charles W. Koburger;Peter H. Mitchell

  • System and apparatus for photolithography

    Mark Charles Hakey;David Vaclay Horak;Charles William Koburger;Peter H. Mitchell

  • A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

    B. Davari;C. Koburger;T. Furukawa;Y. Taur

  • Method for forming quadruple density sidewall image transfer (SIT) structures

    Toshiharu Furukawa;Mark Charles Hakey;Steven John Holmes;David Vaclav Horak

  • Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing

    Howard Landis;Peter Burke;William Cote;William Hill

  • The evolution of IBM CMOS DRAM technology

    E. Adler;J. K. DeBrosse;S. F. Geissler;S. J. Holmes

  • A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)

    B. Davarik;C.W. Koburger;R. Schulz;J.D. Warnock

  • Layout and process to contact sub-lithographic structures

    Toshiharu Furukawa;Mark Charles Hakey;Steven J. Holmes;David V. Horak

  • Simultaneous conditioning of a plurality of memory cells through series resistors

    Toshijaru Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Forming wide dielectric-filled isolation trenches in semi-conductors

    Somanath Dash;Michael L. Kerbaugh;Charles W. Koburger;Brian J. Machesney

  • Sealed air gap for semiconductor chip

    David V. Horak;Elbert E. Huang;Charles W. Koburger;Douglas C. La Tulipe

  • Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

    Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz

  • 22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell

    B.S. Haran;A. Kumar;L. Adam;J. Chang

  • METHOD OF FORMING VERTICAL NANOTUBE SEMICONDUCTOR DEVICE STRUCTURES

    Furukawa Toshiharu;Hackney Marc Charles;Steven John Holmes;David Vaclav Horak

  • Silicon-on-insulator (SOI) Read Only Memory (ROM) array and method of making a SOI ROM

    Toshiharu Furukawa;Mark C. Hakey;Steven J. Holmes;David V. Horak

  • Borderless contact structures

    Toshiharu Furukawa;David V. Horak;Charles W. Koburger

  • Method for fabricating strained silicon-on-insulator strucutures and strained silicon-on-insulator strucutres formed thereby

    Furukawa Toshiharu;Koburger Iii Charles William;Slinkman James Albert

Frequent Co-Authors

David V. Horak
David V. Horak IBM (United States)
Toshiharu Furukawa
Toshiharu Furukawa IBM (United States)
Steven J. Holmes
Steven J. Holmes IBM (United States)
Mark C. Hakey
Mark C. Hakey Semivation
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers
Bruce B. Doris
Bruce B. Doris IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Vamsi K. Paruchuri
Vamsi K. Paruchuri IBM (United States)

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Related Online Degrees & Career Pathways

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