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D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Electronics and Electrical Engineering 38 4882 1707 62 6415

Wendell P. Noble publications per year

The chart shows the history of publications by Wendell P. Noble between 1997 and 2010, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Wendell P. Noble published across 14 years, from 1997 to 2010, averaging 4.4 papers a year. Output peaked at 16 publications in 1998. 1 of the 62 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1997 to 2010. Vertical axis: number of publications, 0 to 16. Peak 16 publications in 1998. 1997: 5 publications 1998: 16 publications 1999: 9 publications 2000: 5 publications 2001: 11 publications 2002: 8 publications 2003: 1 publication 2004: 4 publications 2005: 1 publication 2006: 1 publication 2007: 0 publications 2008: 0 publications 2009: 0 publications 2010: 1 publication
1997 2010

62 publications in total across all disciplines

View publications per year as a table
Wendell P. Noble: publications per year, 1997 to 2010
Year Publications
1997 5
1998 16
1999 9
2000 5
2001 11
2002 8
2003 1
2004 4
2005 1
2006 1
2007 0
2008 0
2009 0
2010 1
Total 62
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Wendell P. Noble publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wendell P. Noble sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 54–73 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 62 publications — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52 62
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Wendell P. Noble D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wendell P. Noble sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 38 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214 38
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Electrical engineering
  • Integrated circuit

Wendell P. Noble mostly deals with Electrical engineering, Transistor, Memory cell, Optoelectronics and Dram. His research in the fields of Pass transistor logic, Logic gate and Programmable logic array overlaps with other disciplines such as Process. The Transistor study combines topics in areas such as Line and Integrated circuit.

Wendell P. Noble interconnects Body region, Trench, Second source, Capacitor and Flash memory in the investigation of issues within Memory cell. His Optoelectronics study combines topics from a wide range of disciplines, such as Electronic circuit and MOSFET. Dynamic random-access memory is closely connected to Silicon on insulator in his research, which is encompassed under the umbrella topic of Dram.

His most cited work include:

  • Memory cell having a vertical transistor with buried source/drain and dual gates (260 citations)
  • 4 F2 folded bit line dram cell structure having buried bit and word lines (253 citations)
  • High density flash memory (219 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Electrical engineering, Transistor, Optoelectronics, Memory cell and Electrical conductor. His study connects Dram and Electrical engineering. His Transistor research incorporates themes from Body region, CMOS, Semiconductor and Inverter.

His Optoelectronics research integrates issues from Layer and Substrate. His Memory cell study combines topics in areas such as Sense amplifier, Dynamic random-access memory, Trench, Capacitor and Static random-access memory. His Electrical conductor research is multidisciplinary, incorporating perspectives in Engineering drawing and Engineering physics.

He most often published in these fields:

  • Electrical engineering (68.89%)
  • Transistor (54.44%)
  • Optoelectronics (42.22%)

What were the highlights of his more recent work (between 2001-2010)?

  • Electrical engineering (68.89%)
  • Transistor (54.44%)
  • Optoelectronics (42.22%)

In recent papers he was focusing on the following fields of study:

His main research concerns Electrical engineering, Transistor, Optoelectronics, Memory cell and Interconnection. The various areas that he examines in his Electrical engineering study include Silicon on insulator and Programmable logic device. His studies in Silicon on insulator integrate themes in fields like PMOS logic, CMOS, Velocity saturation and NMOS logic.

His Transistor study incorporates themes from Body region, Substrate, Bistability and Static random-access memory. His work carried out in the field of Optoelectronics brings together such families of science as Layer and Field-effect transistor. His research in Memory cell focuses on subjects like Capacitor, which are connected to Insulator and Trench.

Between 2001 and 2010, his most popular works were:

  • Trench DRAM cell with vertical device and buried word lines (205 citations)
  • Ultra high density flash memory (164 citations)
  • Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor (157 citations)

In his most recent research, the most cited papers focused on:

  • Transistor
  • Electrical engineering
  • Integrated circuit

His primary scientific interests are in Electrical engineering, Memory cell, Transistor, Body region and Capacitor. Wendell P. Noble combines subjects such as Simple programmable logic device and Macrocell array with his study of Electrical engineering. His Memory cell research includes elements of Computer hardware, Flash memory, Reading and Ultra high density.

In most of his Transistor studies, his work intersects topics such as Static random-access memory. His biological study spans a wide range of topics, including Semiconductor materials, Gate oxide, Substrate, Second source and Insulator. The concepts of his Capacitor study are interwoven with issues in Dram, Optoelectronics, Trench and Line.

Best Publications

  • Memory cell having a vertical transistor with buried source/drain and dual gates

    Wendell P. Noble;Leonard Forbes;Kie Y. Ahn

  • Memory cell with vertical transistor and buried word and body lines

    Leonard Forbes;Wendell P. Noble;Kie Y. Ahn

  • 4 F2 folded bit line dram cell structure having buried bit and word lines

    Wendell P. Noble;Leonard Forbes;Kie Y. Ahn

  • Ultra high density flash memory

    Wendell P. Noble;Leonard Forbes

  • High density flash memory

    Leonard Forbes;Wendell P. Noble

  • Trench DRAM cell with vertical device and buried word lines

    Wendell P. Noble

  • Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor

    Leonard Forbes;Wendell P. Noble

  • Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor

    Wendell P. Noble;Leonard Forbes

  • Programmable memory address decode array with vertical transistors

    Leonard Forbes;Wendell P. Noble

  • Highly conductive composite polysilicon gate for CMOS integrated circuits

    Wendell P. Noble;Leonard Forbes

  • Methods for dual-gated transistors

    Leonard Forbes;Wendell P. Noble

  • Field programmable logic arrays with vertical transistors

    Wendell P. Noble;Leonard Forbes

  • High density SRAM cell with latched vertical transistors

    Wendell P. Noble;Leonard Forbes

  • Structure and method for reducing threshold voltage variations due to dopant fluctuations

    Leonard Forbes;Wendell P. Noble

  • Method for reading a vertical gain cell and array for a dynamic random access memory

    Wendell P. Noble

  • Semiconductor structure having an optical signal path in a substrate and method for forming the same

    Wendell P. Noble

  • Programmable logic array with vertical transistors

    Wendell P. Noble;Leonard Forbes

  • Memory address decode array with vertical transistors

    Leonard Forbes;Wendell P. Noble

  • Method of forming vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, soi and thin film structures

    Leonard Forbes;Wendell P. Noble;Alan R. Reinberg

  • High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown

    Wendell P. Noble;Leonard Forbes

Frequent Co-Authors

Leonard Forbes
Leonard Forbes L. Forbes and Associates LLC
Kie Y. Ahn
Kie Y. Ahn Micron (United States)

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