His primary areas of investigation include Optoelectronics, Transistor, Layer, Semiconductor and Substrate. The various areas that Brian S. Doyle examines in his Optoelectronics study include Field-effect transistor, Electronic engineering, Electrical engineering and Gate oxide. While the research belongs to areas of Gate oxide, he spends his time largely on the problem of Gate dielectric, intersecting his research to questions surrounding Semiconductor device and High-κ dielectric.
His Transistor research includes themes of Substrate and Nanotechnology. His study in Layer is interdisciplinary in nature, drawing from both Wafer, Oxide and Dielectric. His biological study deals with issues like Thin film, which deal with fields such as Metal and Integrated circuit.
Brian S. Doyle mostly deals with Optoelectronics, Layer, Transistor, Electrical engineering and Substrate. Brian S. Doyle interconnects Electronic engineering, Gate dielectric, Semiconductor device and Gate oxide in the investigation of issues within Optoelectronics. His Layer study integrates concerns from other disciplines, such as Oxide and Perpendicular.
His Transistor research integrates issues from CMOS, Nanotechnology and Integrated circuit. His study in the field of Capacitor, MOSFET, Voltage and Threshold voltage also crosses realms of Fin. His Substrate study incorporates themes from Trench, Silicon and Dielectric.
Optoelectronics, Layer, Transistor, Integrated circuit and Oxide are his primary areas of study. The Optoelectronics study combines topics in areas such as Electrical conductor, Tunnel magnetoresistance and Substrate. His research integrates issues of Spin-transfer torque, Perpendicular, Magnet and Voltage in his study of Layer.
His biological study spans a wide range of topics, including Terminal, Static random-access memory and Electronics. His Integrated circuit research is multidisciplinary, incorporating perspectives in Field-effect transistor, Thin film and Insulator. In his study, Logic gate, High speed memory, Gate oxide and Epitaxy is inextricably linked to Semiconductor, which falls within the broad field of Ferroelectricity.
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High performance fully-depleted tri-gate CMOS transistors
B.S. Doyle;S. Datta;M. Doczy;S. Hareland.
IEEE Electron Device Letters (2003)
Nonplanar transistors with metal gate electrodes
Justin K. Brask;Brian S. Doyle;Mark L. Doczy;Robert S. Chau.
TRI-GATE DEVICE AND MANUFACTURING METHOD
Chau Robert;Doyle Brian;Kavalieros Jack;Barlage Douglas.
Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
Brian S. Doyle;Peng Cheng.
Methodology for control of short channel effects in MOS transistors
Brian S. Doyle;Brian Roberds.
Integrated nanoelectronics for the future
Robert Chau;Brian Doyle;Suman Datta;Jack Kavalieros.
Nature Materials (2007)
Method of forming a nonplanar transistor with sidewall spacers
Justin K. Brask;Brian S. Doyle;Jack Kavalieros;Mark Doczy.
Block Contact Architectures for Nanoscale Channel Transistors
Marko Radosavljevic;Amlan Majumdar;Brian S. Doyle;Jack Kavalieros.
Floating-body dynamic random access memory and method of fabrication in tri-gate technology
Stephen H. Tang;Ali Keshavarzi;Dinesh Somasekhar;Fabrice Paillet.
Self-aligned contacts for transistors
Peter L. D. Chang;Brian S. Doyle.
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