D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 62 Citations 12,705 190 World Ranking 489 National Ranking 248
Materials Science D-index 65 Citations 13,223 208 World Ranking 2428 National Ranking 781

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

His primary areas of investigation include Optoelectronics, Transistor, Layer, Semiconductor and Substrate. The various areas that Brian S. Doyle examines in his Optoelectronics study include Field-effect transistor, Electronic engineering, Electrical engineering and Gate oxide. While the research belongs to areas of Gate oxide, he spends his time largely on the problem of Gate dielectric, intersecting his research to questions surrounding Semiconductor device and High-κ dielectric.

His Transistor research includes themes of Substrate and Nanotechnology. His study in Layer is interdisciplinary in nature, drawing from both Wafer, Oxide and Dielectric. His biological study deals with issues like Thin film, which deal with fields such as Metal and Integrated circuit.

His most cited work include:

  • Tri-gate devices and methods of fabrication (557 citations)
  • High performance fully-depleted tri-gate CMOS transistors (420 citations)
  • Nonplanar transistors with metal gate electrodes (390 citations)

What are the main themes of his work throughout his whole career to date?

Brian S. Doyle mostly deals with Optoelectronics, Layer, Transistor, Electrical engineering and Substrate. Brian S. Doyle interconnects Electronic engineering, Gate dielectric, Semiconductor device and Gate oxide in the investigation of issues within Optoelectronics. His Layer study integrates concerns from other disciplines, such as Oxide and Perpendicular.

His Transistor research integrates issues from CMOS, Nanotechnology and Integrated circuit. His study in the field of Capacitor, MOSFET, Voltage and Threshold voltage also crosses realms of Fin. His Substrate study incorporates themes from Trench, Silicon and Dielectric.

He most often published in these fields:

  • Optoelectronics (74.57%)
  • Layer (40.59%)
  • Transistor (32.76%)

What were the highlights of his more recent work (between 2017-2020)?

  • Optoelectronics (74.57%)
  • Layer (40.59%)
  • Transistor (32.76%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Layer, Transistor, Integrated circuit and Oxide are his primary areas of study. The Optoelectronics study combines topics in areas such as Electrical conductor, Tunnel magnetoresistance and Substrate. His research integrates issues of Spin-transfer torque, Perpendicular, Magnet and Voltage in his study of Layer.

His biological study spans a wide range of topics, including Terminal, Static random-access memory and Electronics. His Integrated circuit research is multidisciplinary, incorporating perspectives in Field-effect transistor, Thin film and Insulator. In his study, Logic gate, High speed memory, Gate oxide and Epitaxy is inextricably linked to Semiconductor, which falls within the broad field of Ferroelectricity.

Between 2017 and 2020, his most popular works were:

  • MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology (63 citations)
  • DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES (2 citations)
  • PROTECTION LAYERS FOR MAGNETIC TUNNEL JUNCTIONS (2 citations)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

High performance fully-depleted tri-gate CMOS transistors

B.S. Doyle;S. Datta;M. Doczy;S. Hareland.
IEEE Electron Device Letters (2003)

617 Citations

Nonplanar transistors with metal gate electrodes

Justin K. Brask;Brian S. Doyle;Mark L. Doczy;Robert S. Chau.
(2004)

598 Citations

Tri-gate devices and methods of fabrication

Chau Robert;Doyle Brian;Kavalieros Jack;Barlage Douglas.
(2003)

557 Citations

Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition

Brian S. Doyle;Peng Cheng.
(2000)

477 Citations

Integrated nanoelectronics for the future

Robert Chau;Brian Doyle;Suman Datta;Jack Kavalieros.
Nature Materials (2007)

382 Citations

Self-aligned contacts for transistors

Peter L. D. Chang;Brian S. Doyle.
(2005)

322 Citations

Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering

Brian S. Doyle;Brian Roberds;Jin Lee.
(1999)

321 Citations

Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel

Brian Roberds;Brian S. Doyle.
(2000)

298 Citations

Nonplanar device with stress incorporation layer and method of fabrication

Scott A. Hareland;Robert S. Chau;Brian S. Doyle;Suman Datta.
(2003)

285 Citations

A 50 nm depleted-substrate CMOS transistor (DST)

R. Chau;J. Kavalieros;B. Doyle;A. Murthy.
international electron devices meeting (2001)

279 Citations

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Best Scientists Citing Brian S. Doyle

Kangguo Cheng

Kangguo Cheng

IBM (United States)

Publications: 129

Bruce B. Doris

Bruce B. Doris

IBM (United States)

Publications: 79

Robert S. Chau

Robert S. Chau

Intel (United States)

Publications: 79

Edward J. Nowak

Edward J. Nowak

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Publications: 71

Gurtej S. Sandhu

Gurtej S. Sandhu

Micron (United States)

Publications: 63

Alexander Reznicek

Alexander Reznicek

IBM (United States)

Publications: 62

Jeffrey W. Sleight

Jeffrey W. Sleight

IBM (United States)

Publications: 52

Nitin K. Ingle

Nitin K. Ingle

Applied Materials (United States)

Publications: 51

Suman Datta

Suman Datta

University of Notre Dame

Publications: 51

Ali Khakifirooz

Ali Khakifirooz

Intel (United States)

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Leonard Forbes

Leonard Forbes

Micron (United States)

Publications: 49

Jean-Pierre Colinge

Jean-Pierre Colinge

Taiwan Semiconductor Manufacturing Company (United States)

Publications: 48

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 47

Josephine B. Chang

Josephine B. Chang

IBM (United States)

Publications: 43

Justin K. Brask

Justin K. Brask

Intel (United States)

Publications: 41

Dureseti Chidambarrao

Dureseti Chidambarrao

IBM (United States)

Publications: 38

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