World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
5133
World Ranking
5780
National Ranking
1960

Overview

Josephine B. Chang is affiliated with Northrop Grumman in the United States, contributing to research primarily located within the country. The scientific work spans multiple related fields, with a focus on Social Sciences, Health Professions, and Medicine.

Their research interests include various subfields such as Gender Studies, General Health Professions, and Public Health, Environmental and Occupational Health. These areas reflect an interdisciplinary approach to understanding complex health-related and social issues.

Josephine B. Chang's recent publication output is recorded in the venue Scientific Reports. The identified research paper is titled "Physician marriage survey reveals sex and specialty differences in marital satisfaction factors", published in 2024. This paper explores factors influencing marital satisfaction across different medical specialties and genders, involving aspects of diversity and career dynamics within medicine.

The scientist frequently collaborates with several coauthors whose contributions span related topics. Frequent coauthors include:

  • Rajeev R. Dutta
  • Anthony T. Wu
  • Bryce Picton
  • Saloni Shah
  • Michelle Chernyak

Josephine's work addresses themes important to healthcare professionals, including diversity and career paths within medicine, healthcare professionals' stress and burnout, and medical education and admissions. These topics suggest a research agenda centered on the well-being and development of medical practitioners as well as the structural aspects of medical training and profession.

Key topics of work include:

  • Diversity and Career in Medicine
  • Healthcare professionals' stress and burnout
  • Medical Education and Admissions

Publication venues show a focus on Scientific Reports, a journal known for disseminating multidisciplinary research findings. This indicates Josephine B. Chang's engagement with broader scientific communities interested in health sciences and social aspects of medicine.

Best Publications

  • Improved superconducting qubit coherence using titanium nitride

    Josephine B. Chang;Michael R. Vissers;Antonio D. Córcoles;Martin Sandberg

  • Fin field effect transistor devices with self-aligned source and drain regions

    Josephine Bea Chang;Michael Guillorn;Wilfried Ernst-August Haensch;Katherine Lynn Saenger

  • Printable polythiophene gas sensor array for low-cost electronic noses

    Josephine B. Chang;Vincent Liu;Vivek Subramanian;Kevin Sivula

  • Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

    S. Bangsaruntip;A. Majumdar;G. M. Cohen;S. U. Engelmann

  • Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

    H. Kawasaki;V. S. Basker;T. Yamashita;C.-H. Lin

  • Hybrid CMOS technology with nanowire devices and double gated planar devices

    Sarunya Bangsaruntip;Josephine B. Chang;Leland Chang;Jeffrey W. Sleight

  • Printed electronics for low-cost electronic systems: Technology status and application development

    Vivek Subramanian;Josephine B. Chang;Alejandro de la Fuente Vornbrock;Daniel C. Huang

  • Field-effect transistor inverter and fabricating method thereof

    Josephine Chang;Paul Chang;Guillorn Michael A;Jeffrey Sleight

  • Fabricating Method for Nanowire Mesh Device

    Chang Josephine;Stephen Bedell;Chang Paul;Michael Guillorn

  • Fin-Last Replacement Metal Gate FinFET

    Josephine B. Chang;Michael A. Guillom;Wilfried Ernst-August Haensch

  • Nanowire Mesh FET with Multiple Threshold Voltages

    Josephine B. Chang;Paul Chang;Michael A. Guillorn;Jeffrey W. Sleight

  • FinFET performance advantage at 22nm: An AC perspective

    M. Guillorn;J. Chang;A. Bryant;N. Fuller

  • Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices

    Josephine B. Chang;Isaac Lauer;Chung-Hsun Lin;Jeffrey W. Sleight

  • Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

    S. Bangsaruntip;K. Balakrishnan;S.-L Cheng;J. Chang

  • Nanomesh SRAM cell

    Josephine Chang;Paul Chang;Michael A. Guillorn;Jeffrey Sleight

  • Effect of active layer thickness on bias stress effect in pentacene thin-film transistors

    Josephine B. Chang;Vivek Subramanian

  • Semiconductor structure and method of manufacturing same

    Josephine B Chang;Paul Chang;Guillorn Michael A;Jeffrey W Sleight

  • 22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell

    B.S. Haran;A. Kumar;L. Adam;J. Chang

  • Gate-All-Around Nanowire Tunnel Field Effect Transistors

    Sarunya Bangsaruntip;Josephine B. Chang;Isaac Lauer;Jeffrey W. Sleight

  • Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors

    Jin Cai;Josephine Chang;Leland Chang;Brian L. Ji

Frequent Co-Authors

Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Michael A. Guillorn
Michael A. Guillorn IBM (United States)
Leland Chang
Leland Chang IBM Research - Thomas J. Watson Research Center
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Vijay Narayanan
Vijay Narayanan IBM (United States)
Christian Lavoie
Christian Lavoie IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Guy M. Cohen
Guy M. Cohen IBM (United States)
Vivek Subramanian
Vivek Subramanian École Polytechnique Fédérale de Lausanne
John A. Ott
John A. Ott IBM (United States)

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