D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 31 Citations 4,725 191 World Ranking 4584 National Ranking 1707

Overview

What is she best known for?

The fields of study she is best known for:

  • Semiconductor
  • Electrical engineering
  • Transistor

Josephine B. Chang spends much of her time researching Optoelectronics, Electrical engineering, Nanowire, Field-effect transistor and Transistor. The study incorporates disciplines such as Layer, Gate dielectric and Gate oxide in addition to Optoelectronics. The concepts of her Electrical engineering study are interwoven with issues in Parasitic capacitance and Substrate.

The various areas that Josephine B. Chang examines in her Nanowire study include Nanomesh, CMOS, Doping and Inverter. She combines subjects such as Etching and Silicon with her study of Field-effect transistor. Her work in the fields of Transistor, such as Threshold voltage and Drain-induced barrier lowering, overlaps with other areas such as Stack.

Her most cited work include:

  • Fin field effect transistor devices with self-aligned source and drain regions (221 citations)
  • Improved superconducting qubit coherence using titanium nitride (158 citations)
  • Nanowire mesh device and method of fabricating same (150 citations)

What are the main themes of her work throughout her whole career to date?

Optoelectronics, Electrical engineering, Layer, Nanowire and Field-effect transistor are her primary areas of study. Josephine B. Chang interconnects Electronic engineering, Gate dielectric and Gate oxide in the investigation of issues within Optoelectronics. Her studies deal with areas such as Substrate and Silicon as well as Electronic engineering.

Her Transistor study, which is part of a larger body of work in Electrical engineering, is frequently linked to Planar, Communication channel and Fabrication, bridging the gap between disciplines. Her Layer research incorporates elements of Gate stack and Dielectric. Her biological study deals with issues like CMOS, which deal with fields such as MOSFET.

She most often published in these fields:

  • Optoelectronics (75.62%)
  • Electrical engineering (35.32%)
  • Layer (32.84%)

What were the highlights of her more recent work (between 2015-2021)?

  • Optoelectronics (75.62%)
  • Layer (32.84%)
  • Field-effect transistor (23.88%)

In recent papers she was focusing on the following fields of study:

Josephine B. Chang mainly investigates Optoelectronics, Layer, Field-effect transistor, Nanowire and Semiconductor device. Her Optoelectronics research is multidisciplinary, relying on both Thermocouple and Electronic engineering. Her Layer research incorporates themes from Graphene and Gate stack.

Her Field-effect transistor research is multidisciplinary, incorporating perspectives in RF switch, Raman spectroscopy and Second source. Her research in Nanowire intersects with topics in Nanosheet, Doping and MOSFET. Her studies in Semiconductor device integrate themes in fields like Electronics, Substrate, Semiconductor and Engineering physics.

Between 2015 and 2021, her most popular works were:

  • Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel fets (16 citations)
  • Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources (16 citations)
  • Leveraging air/water current variability for sensor network verification and source localization (12 citations)

In her most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Her scientific interests lie mostly in Layer, Field-effect transistor, Nanowire, Optoelectronics and Gate stack. Her work on Atomic layer deposition as part of general Layer research is often related to Carbon, thus linking different fields of science. Her work deals with themes such as Double gate, Lamellar structure and Void, which intersect with Field-effect transistor.

Her Nanowire study incorporates themes from Semiconductor materials and Semiconductor device. Her Optoelectronics research is multidisciplinary, incorporating elements of Substrate and Electronic engineering. Her Gate stack study combines topics from a wide range of disciplines, such as Structural engineering and Composite material.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Fin field effect transistor devices with self-aligned source and drain regions

Josephine Bea Chang;Michael Guillorn;Wilfried Ernst-August Haensch;Katherine Lynn Saenger.
(2009)

261 Citations

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

S. Bangsaruntip;A. Majumdar;G. M. Cohen;S. U. Engelmann.
symposium on vlsi technology (2010)

221 Citations

Printable polythiophene gas sensor array for low-cost electronic noses

Josephine B. Chang;Vincent Liu;Vivek Subramanian;Kevin Sivula.
Journal of Applied Physics (2006)

219 Citations

Improved superconducting qubit coherence using titanium nitride

Josephine B. Chang;Michael R. Vissers;Antonio D. Córcoles;Martin Sandberg.
Applied Physics Letters (2013)

211 Citations

Hybrid CMOS technology with nanowire devices and double gated planar devices

Sarunya Bangsaruntip;Josephine B. Chang;Leland Chang;Jeffrey W. Sleight.
(2012)

188 Citations

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

H. Kawasaki;V. S. Basker;T. Yamashita;C.-H. Lin.
international electron devices meeting (2009)

178 Citations

Field-effect transistor inverter and fabricating method thereof

Josephine Chang;Paul Chang;Guillorn Michael A;Jeffrey Sleight.
(2010)

169 Citations

Fabricating Method for Nanowire Mesh Device

Chang Josephine;Stephen Bedell;Chang Paul;Michael Guillorn.
(2015)

164 Citations

Printed electronics for low-cost electronic systems: Technology status and application development

Vivek Subramanian;Josephine B. Chang;Alejandro de la Fuente Vornbrock;Daniel C. Huang.
european solid-state circuits conference (2008)

160 Citations

Fin-Last Replacement Metal Gate FinFET

Josephine B. Chang;Michael A. Guillom;Wilfried Ernst-August Haensch.
(2011)

155 Citations

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