World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8535
World Ranking
3093
National Ranking
1161

Materials Science

D-Index
50
Citations
8985
World Ranking
10232
National Ranking
2446

John A. Ott publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where John A. Ott sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 210 publications — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

John A. Ott D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where John A. Ott sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, Epitaxy, CMOS and MOSFET. Electron mobility, Insulator, Semiconductor, Wafer and Silicon-germanium are the core of his Optoelectronics study. Copper interconnect, Three-dimensional integrated circuit and Integrated circuit is closely connected to Silicon on insulator in his research, which is encompassed under the umbrella topic of Electronic engineering.

His Epitaxy study incorporates themes from Field-effect transistor and Silicon. His Silicon research focuses on Doping and how it relates to Stress relaxation. His CMOS study integrates concerns from other disciplines, such as Wafer bonding and Crystal.

His most cited work include:

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations (266 citations)
  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs (244 citations)
  • High speed composite p-channel Si/SiGe heterostructure for field effect devices (242 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Silicon, Epitaxy, Electronic engineering and Layer. His Optoelectronics study frequently draws parallels with other fields, such as MOSFET. His work in Silicon addresses subjects such as Doping, which are connected to disciplines such as Silicide.

The concepts of his Epitaxy study are interwoven with issues in Field-effect transistor, Annealing, Heterojunction and Semiconductor. His Electronic engineering research is multidisciplinary, incorporating perspectives in Dielectric and Insulator. His Layer research includes elements of Transmission electron microscopy and Buffer.

He most often published in these fields:

  • Optoelectronics (65.53%)
  • Silicon (27.66%)
  • Epitaxy (22.13%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (65.53%)
  • Nanotechnology (13.19%)
  • Silicon (27.66%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Nanotechnology, Silicon, Epitaxy and Composite material. He is interested in Wafer, which is a field of Optoelectronics. His work on Nanowire and Carbon nanotube is typically connected to Scaling and Scalability as part of general Nanotechnology study, connecting several disciplines of science.

He usually deals with Silicon and limits it to topics linked to Logic gate and Indium gallium arsenide, Aspect ratio and Silicon-germanium. His studies in Epitaxy integrate themes in fields like Gallium nitride, Annealing, Leakage, Dielectric and Analytical chemistry. John A. Ott has researched Photovoltaics in several fields, including Silicon on insulator and Wafer-level packaging.

Between 2015 and 2021, his most popular works were:

  • High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes (67 citations)
  • Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber (66 citations)
  • Layer transfer of bulk gallium nitride by controlled spalling (20 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Silicon

John A. Ott focuses on Optoelectronics, Nanotechnology, Silicon, Voltage and Logic gate. His work on Quantum efficiency as part of general Optoelectronics research is frequently linked to Reliability, bridging the gap between disciplines. His Nanotechnology research includes themes of Transistor, Electronic circuit and Integrated circuit.

His research on Silicon often connects related topics like Node. His Voltage research is multidisciplinary, incorporating elements of Spontaneous emission, Light-emitting diode, Diode and Electroluminescence. His work carried out in the field of Logic gate brings together such families of science as Wafer, Indium gallium arsenide and Aspect ratio.

Best Publications

  • Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

    Jeehwan Kim;Can Bayram;Hongsik Park;Cheng Wei Cheng

  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

    K. Rim;J. Chu;H. Chen;K.A. Jenkins

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations

    M. Yang;M. Ieong;L. Shi;K. Chan

  • Strained Si NMOSFETs for high performance CMOS technology

    K. Rim;S. Koester;M. Hargrove;J. Chu

  • Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

    A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam

  • Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

    K. Rim;K. Chan;L. Shi;D. Boyd

  • High performance strained silicon finfets device and method for forming same

    Stephen W. Bedell;Kevin K. Chan;Dureseti Chidambarrao;Silke H. Christiansen

  • Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

    S. W. Bedell;D. Shahrjerdi;B. Hekmatshoar;K. Fogel

  • Hybrid-orientation technology (HOT): opportunities and challenges

    Min Yang;V.W.C. Chan;K.K. Chan;L. Shi

  • Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

    Zhen Zhang;F Pagette;C D'Emic;B Yang

  • Electrical characterization of germanium p-channel MOSFETs

    H. Shang;H. Okorn-Schimdt;J. Ott;P. Kozlowski

  • SILICON HAVING BULK AND STRAIN ON INSULATOR USING LOCAL SELECTION OXIDATION

    Chu Jack Oon;Ismail Khalid Ezzeldin;Lee Kim Yang;Ott John Albrecht

  • Planar substrate with blended orientations and its forming method

    Alexander Reznicek

  • Hafnium oxide gate dielectrics on sulfur-passivated germanium

    Martin M. Frank;Steven J. Koester;Matthew Copel;John A. Ott

  • High- $\kappa$ /Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

    M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie

  • High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

    Huiling Shang;H. Okorn-Schmidt;K.K. Chan;M. Copel

  • High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

    Shu-Jen Han;Jianshi Tang;Bharat Kumar;Abram Falk

  • Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

    Christos Dimitrakopoulos;Yu-Ming Lin;Alfred Grill;Damon B. Farmer

  • High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation

    V.P. Kesan;S. Subbana;P.J. Restle;M.J. Tejwani

  • Layer transfer by controlled spalling

    Stephen W Bedell;Keith Fogel;Paul Lauro;Davood Shahrjerdi

  • Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

    K. Rim;R. Anderson;D. Boyd;F. Cardone

Frequent Co-Authors

Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Stephen W. Bedell
Stephen W. Bedell IBM (United States)
Patricia M. Mooney
Patricia M. Mooney Simon Fraser University
jack o chu
jack o chu IBM (United States)
Katherine L. Saenger
Katherine L. Saenger Auburn University
Meikei Ieong
Meikei Ieong Simbury Limited
Steven J. Koester
Steven J. Koester University of Minnesota
Alexander Reznicek
Alexander Reznicek IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Davood Shahrjerdi
Davood Shahrjerdi New York University

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