The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, Epitaxy, CMOS and MOSFET. Electron mobility, Insulator, Semiconductor, Wafer and Silicon-germanium are the core of his Optoelectronics study. Copper interconnect, Three-dimensional integrated circuit and Integrated circuit is closely connected to Silicon on insulator in his research, which is encompassed under the umbrella topic of Electronic engineering.
His Epitaxy study incorporates themes from Field-effect transistor and Silicon. His Silicon research focuses on Doping and how it relates to Stress relaxation. His CMOS study integrates concerns from other disciplines, such as Wafer bonding and Crystal.
His main research concerns Optoelectronics, Silicon, Epitaxy, Electronic engineering and Layer. His Optoelectronics study frequently draws parallels with other fields, such as MOSFET. His work in Silicon addresses subjects such as Doping, which are connected to disciplines such as Silicide.
The concepts of his Epitaxy study are interwoven with issues in Field-effect transistor, Annealing, Heterojunction and Semiconductor. His Electronic engineering research is multidisciplinary, incorporating perspectives in Dielectric and Insulator. His Layer research includes elements of Transmission electron microscopy and Buffer.
His primary scientific interests are in Optoelectronics, Nanotechnology, Silicon, Epitaxy and Composite material. He is interested in Wafer, which is a field of Optoelectronics. His work on Nanowire and Carbon nanotube is typically connected to Scaling and Scalability as part of general Nanotechnology study, connecting several disciplines of science.
He usually deals with Silicon and limits it to topics linked to Logic gate and Indium gallium arsenide, Aspect ratio and Silicon-germanium. His studies in Epitaxy integrate themes in fields like Gallium nitride, Annealing, Leakage, Dielectric and Analytical chemistry. John A. Ott has researched Photovoltaics in several fields, including Silicon on insulator and Wafer-level packaging.
John A. Ott focuses on Optoelectronics, Nanotechnology, Silicon, Voltage and Logic gate. His work on Quantum efficiency as part of general Optoelectronics research is frequently linked to Reliability, bridging the gap between disciplines. His Nanotechnology research includes themes of Transistor, Electronic circuit and Integrated circuit.
His research on Silicon often connects related topics like Node. His Voltage research is multidisciplinary, incorporating elements of Spontaneous emission, Light-emitting diode, Diode and Electroluminescence. His work carried out in the field of Logic gate brings together such families of science as Wafer, Indium gallium arsenide and Aspect ratio.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)
High performance CMOS fabricated on hybrid substrate with different crystal orientations
M. Yang;M. Ieong;L. Shi;K. Chan.
international electron devices meeting (2003)
High performance CMOS fabricated on hybrid substrate with different crystal orientations
M. Yang;M. Ieong;L. Shi;K. Chan.
international electron devices meeting (2003)
Strained Si NMOSFETs for high performance CMOS technology
K. Rim;S. Koester;M. Hargrove;J. Chu.
symposium on vlsi technology (2001)
Strained Si NMOSFETs for high performance CMOS technology
K. Rim;S. Koester;M. Hargrove;J. Chu.
symposium on vlsi technology (2001)
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
Jeehwan Kim;Can Bayram;Hongsik Park;Cheng Wei Cheng.
Nature Communications (2014)
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
Jeehwan Kim;Can Bayram;Hongsik Park;Cheng Wei Cheng.
Nature Communications (2014)
High speed composite p-channel Si/SiGe heterostructure for field effect devices
Chu Jack U;Harmond Richard;Yichidi Kaqiride;Yismeri.
(2001)
Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)
A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam.
international electron devices meeting (2005)
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