D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 40 Citations 7,065 164 World Ranking 8769 National Ranking 2308
Electronics and Electrical Engineering D-index 38 Citations 6,842 188 World Ranking 3092 National Ranking 1207

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, Epitaxy, CMOS and MOSFET. Electron mobility, Insulator, Semiconductor, Wafer and Silicon-germanium are the core of his Optoelectronics study. Copper interconnect, Three-dimensional integrated circuit and Integrated circuit is closely connected to Silicon on insulator in his research, which is encompassed under the umbrella topic of Electronic engineering.

His Epitaxy study incorporates themes from Field-effect transistor and Silicon. His Silicon research focuses on Doping and how it relates to Stress relaxation. His CMOS study integrates concerns from other disciplines, such as Wafer bonding and Crystal.

His most cited work include:

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations (266 citations)
  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs (244 citations)
  • High speed composite p-channel Si/SiGe heterostructure for field effect devices (242 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Silicon, Epitaxy, Electronic engineering and Layer. His Optoelectronics study frequently draws parallels with other fields, such as MOSFET. His work in Silicon addresses subjects such as Doping, which are connected to disciplines such as Silicide.

The concepts of his Epitaxy study are interwoven with issues in Field-effect transistor, Annealing, Heterojunction and Semiconductor. His Electronic engineering research is multidisciplinary, incorporating perspectives in Dielectric and Insulator. His Layer research includes elements of Transmission electron microscopy and Buffer.

He most often published in these fields:

  • Optoelectronics (65.53%)
  • Silicon (27.66%)
  • Epitaxy (22.13%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (65.53%)
  • Nanotechnology (13.19%)
  • Silicon (27.66%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Nanotechnology, Silicon, Epitaxy and Composite material. He is interested in Wafer, which is a field of Optoelectronics. His work on Nanowire and Carbon nanotube is typically connected to Scaling and Scalability as part of general Nanotechnology study, connecting several disciplines of science.

He usually deals with Silicon and limits it to topics linked to Logic gate and Indium gallium arsenide, Aspect ratio and Silicon-germanium. His studies in Epitaxy integrate themes in fields like Gallium nitride, Annealing, Leakage, Dielectric and Analytical chemistry. John A. Ott has researched Photovoltaics in several fields, including Silicon on insulator and Wafer-level packaging.

Between 2015 and 2021, his most popular works were:

  • High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes (67 citations)
  • Photovoltaic Device with over 5% Efficiency Based on an n‐Type Ag2ZnSnSe4 Absorber (66 citations)
  • Layer transfer of bulk gallium nitride by controlled spalling (20 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Silicon

John A. Ott focuses on Optoelectronics, Nanotechnology, Silicon, Voltage and Logic gate. His work on Quantum efficiency as part of general Optoelectronics research is frequently linked to Reliability, bridging the gap between disciplines. His Nanotechnology research includes themes of Transistor, Electronic circuit and Integrated circuit.

His research on Silicon often connects related topics like Node. His Voltage research is multidisciplinary, incorporating elements of Spontaneous emission, Light-emitting diode, Diode and Electroluminescence. His work carried out in the field of Logic gate brings together such families of science as Wafer, Indium gallium arsenide and Aspect ratio.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)

390 Citations

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)

390 Citations

High performance CMOS fabricated on hybrid substrate with different crystal orientations

M. Yang;M. Ieong;L. Shi;K. Chan.
international electron devices meeting (2003)

350 Citations

High performance CMOS fabricated on hybrid substrate with different crystal orientations

M. Yang;M. Ieong;L. Shi;K. Chan.
international electron devices meeting (2003)

350 Citations

Strained Si NMOSFETs for high performance CMOS technology

K. Rim;S. Koester;M. Hargrove;J. Chu.
symposium on vlsi technology (2001)

329 Citations

Strained Si NMOSFETs for high performance CMOS technology

K. Rim;S. Koester;M. Hargrove;J. Chu.
symposium on vlsi technology (2001)

329 Citations

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Jeehwan Kim;Can Bayram;Hongsik Park;Cheng Wei Cheng.
Nature Communications (2014)

319 Citations

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Jeehwan Kim;Can Bayram;Hongsik Park;Cheng Wei Cheng.
Nature Communications (2014)

319 Citations

High speed composite p-channel Si/SiGe heterostructure for field effect devices

Chu Jack U;Harmond Richard;Yichidi Kaqiride;Yismeri.
(2001)

277 Citations

Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam.
international electron devices meeting (2005)

273 Citations

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