D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 57 Citations 12,633 144 World Ranking 1159 National Ranking 1

Research.com Recognitions

Awards & Achievements

2015 - IEEE Fellow For leadership in development of advanced complementary metal-oxide-semiconductor device technologies

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Integrated circuit
  • Transistor

His primary areas of study are Optoelectronics, MOSFET, CMOS, Electronic engineering and Silicon. His work carried out in the field of Optoelectronics brings together such families of science as Layer, Substrate, Transistor and Electrical engineering. His research in MOSFET intersects with topics in Electron mobility, Leakage, Threshold voltage, Silicon on insulator and Gate dielectric.

His work deals with themes such as PMOS logic and NMOS logic, which intersect with CMOS. His Electronic engineering research includes themes of Gate oxide and Reliability. Within one scientific family, Meikei Ieong focuses on topics pertaining to Epitaxy under Silicon, and may sometimes address concerns connected to Wafer bonding, Equivalent series resistance and Field-effect transistor.

His most cited work include:

  • Three-dimensional integrated circuits (636 citations)
  • Silicon device scaling to the sub-10-nm regime. (453 citations)
  • High performance CMOS fabricated on hybrid substrate with different crystal orientations (266 citations)

What are the main themes of his work throughout his whole career to date?

Meikei Ieong spends much of his time researching Optoelectronics, CMOS, MOSFET, Electrical engineering and Electronic engineering. His Optoelectronics research integrates issues from Layer and Gate oxide. His CMOS research is multidisciplinary, incorporating perspectives in Electronic circuit, NMOS logic, Epitaxy, Semiconductor and Substrate.

He combines subjects such as Leakage, Silicon-germanium, Dopant and Germanium with his study of MOSFET. His study looks at the intersection of Electronic engineering and topics like Crystal with Crystal orientation. His Silicon on insulator research is multidisciplinary, incorporating elements of Etching, Ring oscillator, Insulator and Integrated circuit.

He most often published in these fields:

  • Optoelectronics (76.77%)
  • CMOS (38.06%)
  • MOSFET (38.06%)

What were the highlights of his more recent work (between 2005-2010)?

  • Optoelectronics (76.77%)
  • Electrical engineering (36.13%)
  • CMOS (38.06%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Electrical engineering, CMOS, Silicon on insulator and MOSFET. The Optoelectronics study combines topics in areas such as Layer, Transistor and Electronic engineering. His studies deal with areas such as Voltage, Semiconductor technology, Silicon and Integrated circuit as well as Electronic engineering.

His Electrical engineering research incorporates themes from Lithography and Germanium. His CMOS study combines topics from a wide range of disciplines, such as Low leakage, Silicide, Digital subscriber line and Engineering physics. His Silicon on insulator study incorporates themes from Field-effect transistor, Etching and Insulator.

Between 2005 and 2010, his most popular works were:

  • Three-dimensional integrated circuits (636 citations)
  • Germanium channel MOSFETs: opportunities and challenges (167 citations)
  • Hybrid-orientation technology (HOT): opportunities and challenges (166 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Integrated circuit
  • Transistor

Meikei Ieong mostly deals with Optoelectronics, Electrical engineering, CMOS, MOSFET and Electronic engineering. Meikei Ieong works on Optoelectronics which deals in particular with Silicon on insulator. He works mostly in the field of Electrical engineering, limiting it down to topics relating to Germanium and, in certain cases, Parasitic extraction and Silicide, as a part of the same area of interest.

Meikei Ieong frequently studies issues relating to Silicon and CMOS. His MOSFET study integrates concerns from other disciplines, such as Electron mobility and Next-generation lithography. His biological study deals with issues like Integrated circuit, which deal with fields such as Design for manufacturability, Chip and Electronic circuit.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Three-dimensional integrated circuits

A. W. Topol;D. C. La Tulipe;L. Shi;D. J. Frank.
Ibm Journal of Research and Development (2006)

858 Citations

Silicon Device Scaling to the Sub-10-nm Regime

Meikei Ieong;Bruce Doris;Jakub Kedzierski;Ken Rim.
Science (2004)

658 Citations

Three dimensional integrated circuit and method of design

Syed M. Alam;Ibrahim M. Elfadel;Kathryn W Guarini;Meikei Ieong.
(2007)

452 Citations

Monte Carlo modeling of threshold variation due to dopant fluctuations

D.J. Frank;Y. Taur;M. Ieong;H.-S.P. Wong.
symposium on vlsi technology (1999)

450 Citations

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)

390 Citations

Extension and source/drain design for high-performance FinFET devices

J. Kedzierski;Meikei Ieong;E. Nowak;T.S. Kanarsky.
IEEE Transactions on Electron Devices (2003)

372 Citations

High performance CMOS fabricated on hybrid substrate with different crystal orientations

M. Yang;M. Ieong;L. Shi;K. Chan.
international electron devices meeting (2003)

350 Citations

FinFET design considerations based on 3-D simulation and analytical modeling

G. Pei;J. Kedzierski;P. Oldiges;M. Ieong.
IEEE Transactions on Electron Devices (2002)

346 Citations

Strained Si NMOSFETs for high performance CMOS technology

K. Rim;S. Koester;M. Hargrove;J. Chu.
symposium on vlsi technology (2001)

329 Citations

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang.
international electron devices meeting (2002)

284 Citations

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