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Meikei Ieong

Meikei Ieong

Simbury Limited
Hong Kong

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 61 1542 1474 1 1 162 13883

Meikei Ieong publications per year

The chart shows the history of publications by Meikei Ieong between 1993 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Meikei Ieong published across 29 years, from 1993 to 2021, averaging 5.4 papers a year. Output peaked at 28 publications in 2006. 3 of the 157 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1993 to 2021. Vertical axis: number of publications, 0 to 28. Peak 28 publications in 2006. 1993: 1 publication 1994: 1 publication 1995: 1 publication 1996: 0 publications 1997: 1 publication 1998: 3 publications 1999: 1 publication 2000: 4 publications 2001: 9 publications 2002: 21 publications 2003: 20 publications 2004: 19 publications 2005: 21 publications 2006: 28 publications 2007: 5 publications 2008: 4 publications 2009: 3 publications 2010: 4 publications 2011: 2 publications 2012: 1 publication 2013: 2 publications 2014: 1 publication 2015: 0 publications 2016: 1 publication 2017: 0 publications 2018: 1 publication 2019: 0 publications 2020: 1 publication 2021: 2 publications
1993 2021

157 publications in total across all disciplines

View publications per year as a table
Meikei Ieong: publications per year, 1993 to 2021
Year Publications
1993 1
1994 1
1995 1
1996 0
1997 1
1998 3
1999 1
2000 4
2001 9
2002 21
2003 20
2004 19
2005 21
2006 28
2007 5
2008 4
2009 3
2010 4
2011 2
2012 1
2013 2
2014 1
2015 0
2016 1
2017 0
2018 1
2019 0
2020 1
2021 2
Total 157
Download as CSV

Meikei Ieong publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Meikei Ieong sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 162 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 162
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Meikei Ieong D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Meikei Ieong sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 61 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 61 D-Index — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93 61
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2015 - IEEE Fellow For leadership in development of advanced complementary metal-oxide-semiconductor device technologies

Overview

Meikei Ieong is affiliated with Simbury Limited in Hong Kong. Their recent research contributions are documented primarily in the field of electronic devices.

The scientist's recent publication record includes the following paper:

  • IEEE ELECTRON DEVICES SOCIETY, 2024, published in IEEE Transactions on Electron Devices

Frequent co-authors collaborating with Meikei Ieong include:

  • B. Zhao
  • R Todi
  • A Past
  • Sr Guarin
  • M Past

Their work has been published predominantly in the venue:

  • IEEE Transactions on Electron Devices

Meikei Ieong has been recognized as an IEEE Fellow since 2015 for leadership in the development of advanced complementary metal-oxide-semiconductor device technologies.

Best Publications

  • Three-dimensional integrated circuits

    A. W. Topol;D. C. La Tulipe;L. Shi;D. J. Frank

  • Silicon Device Scaling to the Sub-10-nm Regime

    Meikei Ieong;Bruce Doris;Jakub Kedzierski;Ken Rim

  • Monte Carlo modeling of threshold variation due to dopant fluctuations

    D.J. Frank;Y. Taur;M. Ieong;H.-S.P. Wong

  • Three dimensional integrated circuit and method of design

    Syed M. Alam;Ibrahim M. Elfadel;Kathryn W Guarini;Meikei Ieong

  • Extension and source/drain design for high-performance FinFET devices

    J. Kedzierski;Meikei Ieong;E. Nowak;T.S. Kanarsky

  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

    K. Rim;J. Chu;H. Chen;K.A. Jenkins

  • FinFET design considerations based on 3-D simulation and analytical modeling

    G. Pei;J. Kedzierski;P. Oldiges;M. Ieong

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations

    M. Yang;M. Ieong;L. Shi;K. Chan

  • Strained Si NMOSFETs for high performance CMOS technology

    K. Rim;S. Koester;M. Hargrove;J. Chu

  • Extreme scaling with ultra-thin Si channel MOSFETs

    B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang

  • High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices

    J. Kedzierski;D.M. Fried;E.J. Nowak;T. Kanarsky

  • Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

    J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  • Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

    A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam

  • Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

    K. Rim;K. Chan;L. Shi;D. Boyd

  • Integration of strained Ge into advanced CMOS technology

    Huiling Shang;Meikei Ieong;Jack Oon Chu;Kathryn W. Guarini

  • Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

    MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Method for forming mosfet device

    Diane Catherine Boyd;Hussein Ibrahim Hanafi;Meikei Ieong;Wesley Charles Natzle

  • CMOS circuit performance enhancement by surface orientation optimization

    Leland Chang;Meikei Ieong;Min Yang

  • Hybrid planar and FinFET CMOS devices

    Bruce B. Doris;Diane C. Boyd;Meikei Ieong;Thomas S. Kanarsky

Frequent Co-Authors

Bruce B. Doris
Bruce B. Doris IBM (United States)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox
Diane C. Boyd
Diane C. Boyd IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Kathryn W. Guarini
Kathryn W. Guarini IBM (United States)
Kevin K. Chan
Kevin K. Chan IBM (United States)
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
John A. Ott
John A. Ott IBM (United States)

External Links

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Completing a bachelor of project management can also open doors to supervisory and managerial positions, bridging the gap between technical expertise and strategic oversight in the electronics and electrical sectors.

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