2015 - IEEE Fellow For leadership in development of advanced complementary metal-oxide-semiconductor device technologies
His primary areas of study are Optoelectronics, MOSFET, CMOS, Electronic engineering and Silicon. His work carried out in the field of Optoelectronics brings together such families of science as Layer, Substrate, Transistor and Electrical engineering. His research in MOSFET intersects with topics in Electron mobility, Leakage, Threshold voltage, Silicon on insulator and Gate dielectric.
His work deals with themes such as PMOS logic and NMOS logic, which intersect with CMOS. His Electronic engineering research includes themes of Gate oxide and Reliability. Within one scientific family, Meikei Ieong focuses on topics pertaining to Epitaxy under Silicon, and may sometimes address concerns connected to Wafer bonding, Equivalent series resistance and Field-effect transistor.
Meikei Ieong spends much of his time researching Optoelectronics, CMOS, MOSFET, Electrical engineering and Electronic engineering. His Optoelectronics research integrates issues from Layer and Gate oxide. His CMOS research is multidisciplinary, incorporating perspectives in Electronic circuit, NMOS logic, Epitaxy, Semiconductor and Substrate.
He combines subjects such as Leakage, Silicon-germanium, Dopant and Germanium with his study of MOSFET. His study looks at the intersection of Electronic engineering and topics like Crystal with Crystal orientation. His Silicon on insulator research is multidisciplinary, incorporating elements of Etching, Ring oscillator, Insulator and Integrated circuit.
His main research concerns Optoelectronics, Electrical engineering, CMOS, Silicon on insulator and MOSFET. The Optoelectronics study combines topics in areas such as Layer, Transistor and Electronic engineering. His studies deal with areas such as Voltage, Semiconductor technology, Silicon and Integrated circuit as well as Electronic engineering.
His Electrical engineering research incorporates themes from Lithography and Germanium. His CMOS study combines topics from a wide range of disciplines, such as Low leakage, Silicide, Digital subscriber line and Engineering physics. His Silicon on insulator study incorporates themes from Field-effect transistor, Etching and Insulator.
Meikei Ieong mostly deals with Optoelectronics, Electrical engineering, CMOS, MOSFET and Electronic engineering. Meikei Ieong works on Optoelectronics which deals in particular with Silicon on insulator. He works mostly in the field of Electrical engineering, limiting it down to topics relating to Germanium and, in certain cases, Parasitic extraction and Silicide, as a part of the same area of interest.
Meikei Ieong frequently studies issues relating to Silicon and CMOS. His MOSFET study integrates concerns from other disciplines, such as Electron mobility and Next-generation lithography. His biological study deals with issues like Integrated circuit, which deal with fields such as Design for manufacturability, Chip and Electronic circuit.
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Three-dimensional integrated circuits
A. W. Topol;D. C. La Tulipe;L. Shi;D. J. Frank.
Ibm Journal of Research and Development (2006)
Silicon Device Scaling to the Sub-10-nm Regime
Meikei Ieong;Bruce Doris;Jakub Kedzierski;Ken Rim.
Three dimensional integrated circuit and method of design
Syed M. Alam;Ibrahim M. Elfadel;Kathryn W Guarini;Meikei Ieong.
Monte Carlo modeling of threshold variation due to dopant fluctuations
D.J. Frank;Y. Taur;M. Ieong;H.-S.P. Wong.
symposium on vlsi technology (1999)
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)
Extension and source/drain design for high-performance FinFET devices
J. Kedzierski;Meikei Ieong;E. Nowak;T.S. Kanarsky.
IEEE Transactions on Electron Devices (2003)
High performance CMOS fabricated on hybrid substrate with different crystal orientations
M. Yang;M. Ieong;L. Shi;K. Chan.
international electron devices meeting (2003)
FinFET design considerations based on 3-D simulation and analytical modeling
G. Pei;J. Kedzierski;P. Oldiges;M. Ieong.
IEEE Transactions on Electron Devices (2002)
Strained Si NMOSFETs for high performance CMOS technology
K. Rim;S. Koester;M. Hargrove;J. Chu.
symposium on vlsi technology (2001)
Extreme scaling with ultra-thin Si channel MOSFETs
B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang.
international electron devices meeting (2002)
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