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Meikei Ieong

Meikei Ieong

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
13883
World Ranking
1542
National Ranking
1

Research.com Recognitions

  • 2015 - IEEE Fellow For leadership in development of advanced complementary metal-oxide-semiconductor device technologies

Overview

Meikei Ieong is affiliated with Simbury Limited in Hong Kong. Their recent research contributions are documented primarily in the field of electronic devices.

The scientist's recent publication record includes the following paper:

  • IEEE ELECTRON DEVICES SOCIETY, 2024, published in IEEE Transactions on Electron Devices

Frequent co-authors collaborating with Meikei Ieong include:

  • B. Zhao
  • R Todi
  • A Past
  • Sr Guarin
  • M Past

Their work has been published predominantly in the venue:

  • IEEE Transactions on Electron Devices

Meikei Ieong has been recognized as an IEEE Fellow since 2015 for leadership in the development of advanced complementary metal-oxide-semiconductor device technologies.

Best Publications

  • Three-dimensional integrated circuits

    A. W. Topol;D. C. La Tulipe;L. Shi;D. J. Frank

  • Silicon Device Scaling to the Sub-10-nm Regime

    Meikei Ieong;Bruce Doris;Jakub Kedzierski;Ken Rim

  • Monte Carlo modeling of threshold variation due to dopant fluctuations

    D.J. Frank;Y. Taur;M. Ieong;H.-S.P. Wong

  • Three dimensional integrated circuit and method of design

    Syed M. Alam;Ibrahim M. Elfadel;Kathryn W Guarini;Meikei Ieong

  • Extension and source/drain design for high-performance FinFET devices

    J. Kedzierski;Meikei Ieong;E. Nowak;T.S. Kanarsky

  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

    K. Rim;J. Chu;H. Chen;K.A. Jenkins

  • FinFET design considerations based on 3-D simulation and analytical modeling

    G. Pei;J. Kedzierski;P. Oldiges;M. Ieong

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations

    M. Yang;M. Ieong;L. Shi;K. Chan

  • Strained Si NMOSFETs for high performance CMOS technology

    K. Rim;S. Koester;M. Hargrove;J. Chu

  • Extreme scaling with ultra-thin Si channel MOSFETs

    B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang

  • High-performance symmetric-gate and CMOS-compatible V/sub t/ asymmetric-gate FinFET devices

    J. Kedzierski;D.M. Fried;E.J. Nowak;T. Kanarsky

  • Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

    J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  • Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

    A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam

  • Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

    K. Rim;K. Chan;L. Shi;D. Boyd

  • Integration of strained Ge into advanced CMOS technology

    Huiling Shang;Meikei Ieong;Jack Oon Chu;Kathryn W. Guarini

  • Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

    MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Method for forming mosfet device

    Diane Catherine Boyd;Hussein Ibrahim Hanafi;Meikei Ieong;Wesley Charles Natzle

  • CMOS circuit performance enhancement by surface orientation optimization

    Leland Chang;Meikei Ieong;Min Yang

  • Hybrid planar and FinFET CMOS devices

    Bruce B. Doris;Diane C. Boyd;Meikei Ieong;Thomas S. Kanarsky

Frequent Co-Authors

Bruce B. Doris
Bruce B. Doris IBM (United States)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox
Diane C. Boyd
Diane C. Boyd IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Kevin K. Chan
Kevin K. Chan IBM (United States)
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
John A. Ott
John A. Ott IBM (United States)
Vijay Narayanan
Vijay Narayanan IBM (United States)

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