The scientist’s investigation covers issues in Optoelectronics, Thin film, Metallurgy, Analytical chemistry and Silicide. The Optoelectronics study combines topics in areas such as Metal gate, Gate oxide, Electronic engineering, MOSFET and Gate dielectric. His Thin film research is multidisciplinary, incorporating elements of Composite material, Mineralogy and Chemical vapor deposition.
Metallurgy and Chemical engineering are commonly linked in his work. He combines subjects such as Annealing, X-ray crystallography, Electrical resistivity and conductivity, Diffusion barrier and Tantalum with his study of Analytical chemistry. The various areas that Cyril Cabral examines in his Annealing study include Titanium and Silicon.
Cyril Cabral spends much of his time researching Optoelectronics, Metallurgy, Annealing, Silicide and Analytical chemistry. His Optoelectronics study incorporates themes from Layer, Metal gate, Electronic engineering and Electrical engineering. His Annealing research is multidisciplinary, relying on both Activation energy, Sheet resistance, Tin, Crystallite and Sputter deposition.
In his study, which falls under the umbrella issue of Silicide, Amorphous solid is strongly linked to Chemical engineering. His research integrates issues of Crystallography, Thin film, X-ray crystallography, Transmission electron microscopy and Electrical resistivity and conductivity in his study of Analytical chemistry. His studies in Thin film integrate themes in fields like Microstructure, Tantalum and Diffusion barrier.
Optoelectronics, Layer, Metallurgy, Electronic engineering and Integrated circuit are his primary areas of study. His Gate oxide research extends to the thematically linked field of Optoelectronics. Cyril Cabral has researched Layer in several fields, including Electrical conductor, Metal and Semiconductor.
His work in Metallurgy covers topics such as Electroplating which are related to areas like Recrystallization. His Copper study integrates concerns from other disciplines, such as Annealing and Microstructure, Grain boundary. His Silicide study contributes to a more complete understanding of Silicon.
Cyril Cabral mainly investigates Layer, Optoelectronics, Metallurgy, Electronic engineering and Copper. Layer is a primary field of his research addressed under Composite material. His Optoelectronics research integrates issues from Dosimeter, Radiation and Node.
Cyril Cabral works mostly in the field of Node, limiting it down to topics relating to Contact resistance and, in certain cases, Silicide, as a part of the same area of interest. In his work, Oxide is strongly intertwined with Diffusion barrier, which is a subfield of Metallurgy. In his research on the topic of Copper, Semiconductor is strongly related with Electroplating.
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Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
Karen Holloway;Peter M. Fryer;Cyril Cabral;J. M. E. Harper.
Journal of Applied Physics (1992)
Towards implementation of a nickel silicide process for CMOS technologies
C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral.
Microelectronic Engineering (2003)
Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
J. M. E. Harper;C. Cabral;P. C. Andricacos;L. Gignac.
Journal of Applied Physics (1999)
Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications
E. P. Gusev;C. Cabral;M. Copel;C. D'Emic.
Microelectronic Engineering (2003)
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
Cyril Cabral;Alessandro C. Callegari;Michael A. Gribelyuk;Paul C. Jamison.
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang.
international electron devices meeting (2002)
A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates
S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral.
symposium on vlsi technology (2006)
(Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM
D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz.
Ibm Journal of Research and Development (1999)
Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang.
Verfahren für metall-ersetzungs-gate eines high-performance-bauelements
An L Steegen;Victor Ku;Kwong Hon Wong;Ying Li.
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