D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 39 Citations 7,019 210 World Ranking 3837 National Ranking 1307
Materials Science D-index 47 Citations 8,192 251 World Ranking 7866 National Ranking 2065

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Composite material
  • Silicon

The scientist’s investigation covers issues in Optoelectronics, Thin film, Metallurgy, Analytical chemistry and Silicide. The Optoelectronics study combines topics in areas such as Metal gate, Gate oxide, Electronic engineering, MOSFET and Gate dielectric. His Thin film research is multidisciplinary, incorporating elements of Composite material, Mineralogy and Chemical vapor deposition.

Metallurgy and Chemical engineering are commonly linked in his work. He combines subjects such as Annealing, X-ray crystallography, Electrical resistivity and conductivity, Diffusion barrier and Tantalum with his study of Analytical chemistry. The various areas that Cyril Cabral examines in his Annealing study include Titanium and Silicon.

His most cited work include:

  • Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions (396 citations)
  • Towards implementation of a nickel silicide process for CMOS technologies (347 citations)
  • Mechanisms for microstructure evolution in electroplated copper thin films near room temperature (304 citations)

What are the main themes of his work throughout his whole career to date?

Cyril Cabral spends much of his time researching Optoelectronics, Metallurgy, Annealing, Silicide and Analytical chemistry. His Optoelectronics study incorporates themes from Layer, Metal gate, Electronic engineering and Electrical engineering. His Annealing research is multidisciplinary, relying on both Activation energy, Sheet resistance, Tin, Crystallite and Sputter deposition.

In his study, which falls under the umbrella issue of Silicide, Amorphous solid is strongly linked to Chemical engineering. His research integrates issues of Crystallography, Thin film, X-ray crystallography, Transmission electron microscopy and Electrical resistivity and conductivity in his study of Analytical chemistry. His studies in Thin film integrate themes in fields like Microstructure, Tantalum and Diffusion barrier.

He most often published in these fields:

  • Optoelectronics (36.36%)
  • Metallurgy (24.76%)
  • Annealing (22.26%)

What were the highlights of his more recent work (between 2008-2021)?

  • Optoelectronics (36.36%)
  • Layer (19.75%)
  • Metallurgy (24.76%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Layer, Metallurgy, Electronic engineering and Integrated circuit are his primary areas of study. His Gate oxide research extends to the thematically linked field of Optoelectronics. Cyril Cabral has researched Layer in several fields, including Electrical conductor, Metal and Semiconductor.

His work in Metallurgy covers topics such as Electroplating which are related to areas like Recrystallization. His Copper study integrates concerns from other disciplines, such as Annealing and Microstructure, Grain boundary. His Silicide study contributes to a more complete understanding of Silicon.

Between 2008 and 2021, his most popular works were:

  • Phase transitions in Ge-Sb phase change materials (69 citations)
  • Microstructure modification in copper interconnect structure (57 citations)
  • Controlling fragmentation of chemically strengthened glass (42 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Composite material
  • Aluminium

Cyril Cabral mainly investigates Layer, Optoelectronics, Metallurgy, Electronic engineering and Copper. Layer is a primary field of his research addressed under Composite material. His Optoelectronics research integrates issues from Dosimeter, Radiation and Node.

Cyril Cabral works mostly in the field of Node, limiting it down to topics relating to Contact resistance and, in certain cases, Silicide, as a part of the same area of interest. In his work, Oxide is strongly intertwined with Diffusion barrier, which is a subfield of Metallurgy. In his research on the topic of Copper, Semiconductor is strongly related with Electroplating.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

Karen Holloway;Peter M. Fryer;Cyril Cabral;J. M. E. Harper.
Journal of Applied Physics (1992)

623 Citations

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral.
Microelectronic Engineering (2003)

469 Citations

Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

J. M. E. Harper;C. Cabral;P. C. Andricacos;L. Gignac.
Journal of Applied Physics (1999)

446 Citations

Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications

E. P. Gusev;C. Cabral;M. Copel;C. D'Emic.
Microelectronic Engineering (2003)

360 Citations

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

Cyril Cabral;Alessandro C. Callegari;Michael A. Gribelyuk;Paul C. Jamison.
(2002)

279 Citations

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang.
international electron devices meeting (2002)

276 Citations

A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral.
symposium on vlsi technology (2006)

273 Citations

(Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM

D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz.
Ibm Journal of Research and Development (1999)

259 Citations

Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang.
(2006)

245 Citations

Verfahren für metall-ersetzungs-gate eines high-performance-bauelements

An L Steegen;Victor Ku;Kwong Hon Wong;Ying Li.
(2004)

243 Citations

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