2026 Cyril Cabral: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	58	7697	7440	1911	1772	296	11946

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

7697

7440

1911

1772

296

11946

Overview

Cyril Cabral is affiliated with IBM in the United States. Their research primarily spans the field of Engineering, with a focus on Electrical and Electronic Engineering. The scientist's work covers several subfields including Renewable Energy, Sustainability and the Environment, Biomedical Engineering, Computational Mechanics, and Automotive Engineering.

The main topics investigated by Cyril Cabral include:

Semiconductor materials and devices
Integrated Circuits and Semiconductor Failure Analysis
Advanced Memory and Neural Computing
Solar cell performance optimization
Photovoltaic System Optimization Techniques
Nanowire Synthesis and Applications
Advancements in Semiconductor Devices and Circuit Design

They have published research in a variety of scholarly venues. Frequent publication venues include:

Advanced Materials
IEEE Electron Device Letters
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
IEEE Transactions on Components Packaging and Manufacturing Technology
Microelectronic Engineering

Some notable recent papers authored or coauthored by Cyril Cabral are:

"Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy", 2021, IEEE Electron Device Letters
"Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers", 2020, Advanced Materials
"Thin film deposition research and its impact on microelectronics scaling", 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
"3-D Die Stacking With 55 μm Pitch Interconnections on Advanced Ground-Rule Laminate for Artificial Intelligence System", 2021, IEEE Transactions on Components Packaging and Manufacturing Technology
"AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress", 2020, Microelectronic Engineering

Frequent collaborators working with Cyril Cabral include:

Franco Stellari
Peilin Song
Ning Li
Kevin Han
William Spratt

Best Publications

Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

Karen Holloway;Peter M. Fryer;Cyril Cabral;J. M. E. Harper

649
Citations
Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral

496
Citations
Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

J. M. E. Harper;C. Cabral;P. C. Andricacos;L. Gignac

464
Citations
Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications

E. P. Gusev;C. Cabral;M. Copel;C. D'Emic

393
Citations
A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral

286
Citations
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

282
Citations
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

Cyril Cabral;Alessandro C. Callegari;Michael A. Gribelyuk;Paul C. Jamison

279
Citations
(Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM

D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz

266
Citations
Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang

245
Citations
Verfahren für metall-ersetzungs-gate eines high-performance-bauelements

An L Steegen;Victor Ku;Kwong Hon Wong;Ying Li

243
Citations
The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

L. A. Clevenger;A. Mutscheller;J. M. E. Harper;C. Cabral

243
Citations
Tasin oxygen diffusion barrier in multilayer structures

Paul David Agnello;Cyril Cabral;Alfred Grill;Christopher Vincent Jahnes

220
Citations
Phase transformation of thin sputter-deposited tungsten films at room temperature

S. M. Rossnagel;I. C. Noyan;C. Cabral

202
Citations
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

H. Kim;C. Cabral;C. Lavoie;S. M. Rossnagel

177
Citations
Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

L. Krusin-Elbaum;C. Cabral;Kuan-Neng Chen;M. Copel

162
Citations
Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

159
Citations
Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

R. W. Mann;G. L. Miles;T. A. Knotts;D. W. Rakowski

151
Citations
On the use of alloying elements for Cu interconnect applications

K. Barmak;C. Cabral;K. P. Rodbell;J. M. E. Harper

144
Citations
Comparison of high vacuum and ultra‐high‐vacuum tantalum diffusion barrier performance against copper penetration

L. A. Clevenger;N. A. Bojarczuk;K. Holloway;J. M. E. Harper

141
Citations
THIN-FILM METAL BARRIER LAYER FOR ELECTRICAL INTERCONNECTION

Cabral Cyril;Dehaven Patrick William;Edelstein Daniel Charles;Klaus David Peter

140
Citations