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D-Index & Metrics

Materials Science

D-Index
58
Citations
11946
World Ranking
7695
National Ranking
1909

Cyril Cabral publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Cyril Cabral sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 296 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Cyril Cabral D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Cyril Cabral sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 58 D-Index — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Cyril Cabral is affiliated with IBM in the United States. Their research primarily spans the field of Engineering, with a focus on Electrical and Electronic Engineering. The scientist's work covers several subfields including Renewable Energy, Sustainability and the Environment, Biomedical Engineering, Computational Mechanics, and Automotive Engineering.

The main topics investigated by Cyril Cabral include:

  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Memory and Neural Computing
  • Solar cell performance optimization
  • Photovoltaic System Optimization Techniques
  • Nanowire Synthesis and Applications
  • Advancements in Semiconductor Devices and Circuit Design

They have published research in a variety of scholarly venues. Frequent publication venues include:

  • Advanced Materials
  • IEEE Electron Device Letters
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • IEEE Transactions on Components Packaging and Manufacturing Technology
  • Microelectronic Engineering

Some notable recent papers authored or coauthored by Cyril Cabral are:

  • "Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy", 2021, IEEE Electron Device Letters
  • "Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers", 2020, Advanced Materials
  • "Thin film deposition research and its impact on microelectronics scaling", 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "3-D Die Stacking With 55 μm Pitch Interconnections on Advanced Ground-Rule Laminate for Artificial Intelligence System", 2021, IEEE Transactions on Components Packaging and Manufacturing Technology
  • "AC conductivity analysis as a measure of low k dielectric capacitor reliability degradation due to moisture ingress", 2020, Microelectronic Engineering

Frequent collaborators working with Cyril Cabral include:

  • Franco Stellari
  • Peilin Song
  • Ning Li
  • Kevin Han
  • William Spratt

Best Publications

  • Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

    Karen Holloway;Peter M. Fryer;Cyril Cabral;J. M. E. Harper

  • Towards implementation of a nickel silicide process for CMOS technologies

    C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral

  • Mechanisms for microstructure evolution in electroplated copper thin films near room temperature

    J. M. E. Harper;C. Cabral;P. C. Andricacos;L. Gignac

  • Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications

    E. P. Gusev;C. Cabral;M. Copel;C. D'Emic

  • A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates

    S. Zafar;Y.H. Kim;V. Narayanan;C. Cabral

  • Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

    J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  • Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

    Cyril Cabral;Alessandro C. Callegari;Michael A. Gribelyuk;Paul C. Jamison

  • (Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM

    D. E. Kotecki;J. D. Baniecki;H. Shen;R. B. Laibowitz

  • Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

    Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang

  • Verfahren für metall-ersetzungs-gate eines high-performance-bauelements

    An L Steegen;Victor Ku;Kwong Hon Wong;Ying Li

  • The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

    L. A. Clevenger;A. Mutscheller;J. M. E. Harper;C. Cabral

  • Tasin oxygen diffusion barrier in multilayer structures

    Paul David Agnello;Cyril Cabral;Alfred Grill;Christopher Vincent Jahnes

  • Phase transformation of thin sputter-deposited tungsten films at room temperature

    S. M. Rossnagel;I. C. Noyan;C. Cabral

  • Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

    H. Kim;C. Cabral;C. Lavoie;S. M. Rossnagel

  • Evidence for segregation of Te in Ge2Sb2Te5 films: Effect on the “phase-change” stress

    L. Krusin-Elbaum;C. Cabral;Kuan-Neng Chen;M. Copel

  • Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

    C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

  • Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation

    R. W. Mann;G. L. Miles;T. A. Knotts;D. W. Rakowski

  • On the use of alloying elements for Cu interconnect applications

    K. Barmak;C. Cabral;K. P. Rodbell;J. M. E. Harper

  • Comparison of high vacuum and ultra‐high‐vacuum tantalum diffusion barrier performance against copper penetration

    L. A. Clevenger;N. A. Bojarczuk;K. Holloway;J. M. E. Harper

  • THIN-FILM METAL BARRIER LAYER FOR ELECTRICAL INTERCONNECTION

    Cabral Cyril;Dehaven Patrick William;Edelstein Daniel Charles;Klaus David Peter

Frequent Co-Authors

Christian Lavoie
Christian Lavoie IBM (United States)
James Mckell Edwin Harper
James Mckell Edwin Harper IBM (United States)
Katherine L. Saenger
Katherine L. Saenger Auburn University
Vijay Narayanan
Vijay Narayanan IBM (United States)
François M. d'Heurle
François M. d'Heurle IBM (United States)
Katayun Barmak
Katayun Barmak Columbia University
Guy M. Cohen
Guy M. Cohen IBM (United States)
Stephen M. Rossnagel
Stephen M. Rossnagel IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Martin M. Frank
Martin M. Frank IBM (United States)

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