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Jorge A. Kittl

Jorge A. Kittl

KU Leuven
Belgium

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 41 4322 4148 92 88 262 6288

Jorge A. Kittl publications per year

The chart shows the history of publications by Jorge A. Kittl between 1986 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jorge A. Kittl published across 36 years, from 1986 to 2021, averaging 8 papers a year. Output peaked at 40 publications in 2011. 6 of the 289 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1986 to 2021. Vertical axis: number of publications, 0 to 40. Peak 40 publications in 2011. 1986: 1 publication 1987: 1 publication 1988: 2 publications 1989: 0 publications 1990: 2 publications 1991: 2 publications 1992: 2 publications 1993: 3 publications 1994: 1 publication 1995: 5 publications 1996: 4 publications 1997: 5 publications 1998: 22 publications 1999: 5 publications 2000: 1 publication 2001: 1 publication 2002: 0 publications 2003: 6 publications 2004: 9 publications 2005: 20 publications 2006: 20 publications 2007: 18 publications 2008: 11 publications 2009: 25 publications 2010: 24 publications 2011: 40 publications 2012: 26 publications 2013: 6 publications 2014: 1 publication 2015: 4 publications 2016: 2 publications 2017: 3 publications 2018: 5 publications 2019: 6 publications 2020: 5 publications 2021: 1 publication
1986 2021

289 publications in total across all disciplines

View publications per year as a table
Jorge A. Kittl: publications per year, 1986 to 2021
Year Publications
1986 1
1987 1
1988 2
1989 0
1990 2
1991 2
1992 2
1993 3
1994 1
1995 5
1996 4
1997 5
1998 22
1999 5
2000 1
2001 1
2002 0
2003 6
2004 9
2005 20
2006 20
2007 18
2008 11
2009 25
2010 24
2011 40
2012 26
2013 6
2014 1
2015 4
2016 2
2017 3
2018 5
2019 6
2020 5
2021 1
Total 289
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Jorge A. Kittl publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jorge A. Kittl sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 262 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 262
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Jorge A. Kittl D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jorge A. Kittl sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 41 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187 41
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Jorge A. Kittl is affiliated with KU Leuven in Belgium and has contributed to research primarily in the fields of engineering and materials science. Their work focuses on electrical and electronic engineering as well as materials chemistry, with a particular emphasis on ferroelectric and negative capacitance devices, semiconductor materials and devices, and ferroelectric and piezoelectric materials.

The scientist's publication record includes research articles and commentaries in notable venues. Noteworthy recent papers include:

  • "Shallow electron traps in high-k insulating oxides" (2021, Solid-State Electronics)
  • "A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer" (2020, arXiv (Cornell University))
  • "Comment on 'Unveiling the double-well energy landscape in a ferroelectric layer'" (2020, arXiv (Cornell University))

Kittl frequently publishes in the venue arXiv (Cornell University) and has also contributed to Solid-State Electronics. Their work involves collaboration with a number of co-authors, including Jean-Pierre Locquet, Michel Houssa, Valeri Afanasiev, Roman Izmailov, and B. J. O'Sullivan.

Their main areas of research encompass the following topics:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing

Jorge A. Kittl's recent scholarly contributions reflect a consistent focus on the intersection of electronic materials and device physics, exploring phenomena relevant to device stability and performance, including negative capacitance effects and electron trapping mechanisms in insulating oxides.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

    H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  • Complete experimental test of kinetic models for rapid alloy solidification

    J. A. Kittl;Paul G. Sanders;Michael J. Aziz;D. P. Brunco

  • Ni- and Co-based silicides for advanced CMOS applications

    J. A. Kittl;A. Lauwers;O. Chamirian;M. Van Dal

  • Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines

    J. A. Kittl;D. A. Prinslow;P. P. Apte;M. F. Pas

  • Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

    Geert Rampelberg;Marc Schaekers;Koen Martens;Qingge Xie

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

    L Goux;Karl Opsomer;R Degraeve;R Muller

  • High current effects in silicide films for sub-0.25 /spl mu/m VLSI technologies

    K. Banerjee;C. Hu;A. Amerasekera;J.A. Kittl

  • Ni based silicides for 45 nm CMOS and beyond

    Anne Lauwers;Jorge A. Kittl;Mark J.H. Van Dal;Oxana Chamirian

  • Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

    Jorge Kittl;QZ Hong

  • Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates

    J.A. Kittl;M.A. Pawlak;A. Lauwers;C. Demeurisse

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

    N. Menou;M. Popovici;S. Clima;K. Opsomer

  • Atomic Layer Deposition of Strontium Titanate Films Using Sr ( #2#1Cp ) 2 and Ti ( OMe ) 4

    M Popovici;S Van Elshocht;N Menou;J Swerts

  • Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Silicides and germanides for nano-CMOS applications

    Jorge Kittl;Karl Opsomer;C Torregiani;C Demeurisse

  • Nucleation and growth of YBaCuO on SrTiO3

    B. M. Clemens;C. W. Nieh;J. A. Kittl;W. L. Johnson

  • Method for forming dual fully silicided gates and devices obtained thereby

    Jorge Adrian Kittl;Anne Lauwers;Anabela Veloso;Anil Kottantharayil

Frequent Co-Authors

Malgorzata Jurczak
Malgorzata Jurczak Lam Research
Dirk Wouters
Dirk Wouters RWTH Aachen University
Geoffrey Pourtois
Geoffrey Pourtois Imec
Christoph Adelmann
Christoph Adelmann Imec
P.P. Absil
P.P. Absil Imec
Hugo Bender
Hugo Bender Imec
Ludovic Goux
Ludovic Goux Imec
Bogdan Govoreanu
Bogdan Govoreanu Imec
Karen Maex
Karen Maex University of Amsterdam
Robin Degraeve
Robin Degraeve Imec

External Links

Personal website of Jorge A. Kittl Google Scholar page

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Best Scientists Citing Jorge A. Kittl

Malgorzata Jurczak

Malgorzata Jurczak

Lam Research

Publications: 80

Ludovic Goux

Ludovic Goux

Imec

Publications: 58

Rainer Waser

Rainer Waser

RWTH Aachen University

Publications: 40

Robin Degraeve

Robin Degraeve

Imec

Publications: 40

Bogdan Govoreanu

Bogdan Govoreanu

Imec

Publications: 40

Christophe Detavernier

Christophe Detavernier

Ghent University

Publications: 40

Shimeng Yu

Shimeng Yu

Georgia Institute of Technology

Publications: 36

Bin Gao

Bin Gao

Xi'an Jiaotong University

Publications: 35

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 33

Dirk Wouters

Dirk Wouters

RWTH Aachen University

Publications: 32

Christian Lavoie

Christian Lavoie

IBM (United States)

Publications: 31

H.-S. Philip Wong

H.-S. Philip Wong

Stanford University

Publications: 29

Wilfried Vandervorst

Wilfried Vandervorst

Imec

Publications: 27

Jinfeng Kang

Jinfeng Kang

Peking University

Publications: 27

Kin Leong Pey

Kin Leong Pey

Singapore University of Technology and Design

Publications: 25

Cheol Seong Hwang

Cheol Seong Hwang

Seoul National University

Publications: 24

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