World's Best Scientists 2026 revealed!
Jorge A. Kittl

Jorge A. Kittl

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6288
World Ranking
4322
National Ranking
92

Jorge A. Kittl publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jorge A. Kittl sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 262 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jorge A. Kittl D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jorge A. Kittl sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jorge A. Kittl is affiliated with KU Leuven in Belgium and has contributed to research primarily in the fields of engineering and materials science. Their work focuses on electrical and electronic engineering as well as materials chemistry, with a particular emphasis on ferroelectric and negative capacitance devices, semiconductor materials and devices, and ferroelectric and piezoelectric materials.

The scientist's publication record includes research articles and commentaries in notable venues. Noteworthy recent papers include:

  • "Shallow electron traps in high-k insulating oxides" (2021, Solid-State Electronics)
  • "A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer" (2020, arXiv (Cornell University))
  • "Comment on 'Unveiling the double-well energy landscape in a ferroelectric layer'" (2020, arXiv (Cornell University))

Kittl frequently publishes in the venue arXiv (Cornell University) and has also contributed to Solid-State Electronics. Their work involves collaboration with a number of co-authors, including Jean-Pierre Locquet, Michel Houssa, Valeri Afanasiev, Roman Izmailov, and B. J. O'Sullivan.

Their main areas of research encompass the following topics:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing

Jorge A. Kittl's recent scholarly contributions reflect a consistent focus on the intersection of electronic materials and device physics, exploring phenomena relevant to device stability and performance, including negative capacitance effects and electron trapping mechanisms in insulating oxides.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

    H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  • Complete experimental test of kinetic models for rapid alloy solidification

    J. A. Kittl;Paul G. Sanders;Michael J. Aziz;D. P. Brunco

  • Ni- and Co-based silicides for advanced CMOS applications

    J. A. Kittl;A. Lauwers;O. Chamirian;M. Van Dal

  • Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines

    J. A. Kittl;D. A. Prinslow;P. P. Apte;M. F. Pas

  • Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

    Geert Rampelberg;Marc Schaekers;Koen Martens;Qingge Xie

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

    L Goux;Karl Opsomer;R Degraeve;R Muller

  • High current effects in silicide films for sub-0.25 /spl mu/m VLSI technologies

    K. Banerjee;C. Hu;A. Amerasekera;J.A. Kittl

  • Ni based silicides for 45 nm CMOS and beyond

    Anne Lauwers;Jorge A. Kittl;Mark J.H. Van Dal;Oxana Chamirian

  • Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

    Jorge Kittl;QZ Hong

  • Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates

    J.A. Kittl;M.A. Pawlak;A. Lauwers;C. Demeurisse

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

    N. Menou;M. Popovici;S. Clima;K. Opsomer

  • Atomic Layer Deposition of Strontium Titanate Films Using Sr ( #2#1Cp ) 2 and Ti ( OMe ) 4

    M Popovici;S Van Elshocht;N Menou;J Swerts

  • Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Silicides and germanides for nano-CMOS applications

    Jorge Kittl;Karl Opsomer;C Torregiani;C Demeurisse

  • Nucleation and growth of YBaCuO on SrTiO3

    B. M. Clemens;C. W. Nieh;J. A. Kittl;W. L. Johnson

  • Method for forming dual fully silicided gates and devices obtained thereby

    Jorge Adrian Kittl;Anne Lauwers;Anabela Veloso;Anil Kottantharayil

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