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Jorge A. Kittl

Jorge A. Kittl

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6288
World Ranking
4322
National Ranking
92

Overview

Jorge A. Kittl is affiliated with KU Leuven in Belgium and has contributed to research primarily in the fields of engineering and materials science. Their work focuses on electrical and electronic engineering as well as materials chemistry, with a particular emphasis on ferroelectric and negative capacitance devices, semiconductor materials and devices, and ferroelectric and piezoelectric materials.

The scientist's publication record includes research articles and commentaries in notable venues. Noteworthy recent papers include:

  • "Shallow electron traps in high-k insulating oxides" (2021, Solid-State Electronics)
  • "A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer" (2020, arXiv (Cornell University))
  • "Comment on 'Unveiling the double-well energy landscape in a ferroelectric layer'" (2020, arXiv (Cornell University))

Kittl frequently publishes in the venue arXiv (Cornell University) and has also contributed to Solid-State Electronics. Their work involves collaboration with a number of co-authors, including Jean-Pierre Locquet, Michel Houssa, Valeri Afanasiev, Roman Izmailov, and B. J. O'Sullivan.

Their main areas of research encompass the following topics:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Ferroelectric and Piezoelectric Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing

Jorge A. Kittl's recent scholarly contributions reflect a consistent focus on the intersection of electronic materials and device physics, exploring phenomena relevant to device stability and performance, including negative capacitance effects and electron trapping mechanisms in insulating oxides.

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

    H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  • Complete experimental test of kinetic models for rapid alloy solidification

    J. A. Kittl;Paul G. Sanders;Michael J. Aziz;D. P. Brunco

  • Ni- and Co-based silicides for advanced CMOS applications

    J. A. Kittl;A. Lauwers;O. Chamirian;M. Van Dal

  • Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines

    J. A. Kittl;D. A. Prinslow;P. P. Apte;M. F. Pas

  • Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

    Geert Rampelberg;Marc Schaekers;Koen Martens;Qingge Xie

  • Dynamic ‘hour glass’ model for SET and RESET in HfO 2 RRAM

    R. Degraeve;A. Fantini;S. Clima;B. Govoreanu

  • Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

    L Goux;Karl Opsomer;R Degraeve;R Muller

  • High current effects in silicide films for sub-0.25 /spl mu/m VLSI technologies

    K. Banerjee;C. Hu;A. Amerasekera;J.A. Kittl

  • Ni based silicides for 45 nm CMOS and beyond

    Anne Lauwers;Jorge A. Kittl;Mark J.H. Van Dal;Oxana Chamirian

  • Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

    Jorge Kittl;QZ Hong

  • Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates

    J.A. Kittl;M.A. Pawlak;A. Lauwers;C. Demeurisse

  • Ultralow sub-500nA operating current high-performance TiN\Al 2 O 3 \HfO 2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

    L. Goux;A. Fantini;G. Kar;Y.-Y. Chen

  • Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

    N. Menou;M. Popovici;S. Clima;K. Opsomer

  • Atomic Layer Deposition of Strontium Titanate Films Using Sr ( #2#1Cp ) 2 and Ti ( OMe ) 4

    M Popovici;S Van Elshocht;N Menou;J Swerts

  • Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

    V. V. Afanas'ev;M. Houssa;A. Stesmans;C. Merckling

  • Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

    A. Fantini;D. J. Wouters;R. Degraeve;L. Goux

  • Silicides and germanides for nano-CMOS applications

    Jorge Kittl;Karl Opsomer;C Torregiani;C Demeurisse

  • Nucleation and growth of YBaCuO on SrTiO3

    B. M. Clemens;C. W. Nieh;J. A. Kittl;W. L. Johnson

  • Method for forming dual fully silicided gates and devices obtained thereby

    Jorge Adrian Kittl;Anne Lauwers;Anabela Veloso;Anil Kottantharayil

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