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Materials Science

D-Index
53
Citations
10731
World Ranking
9195
National Ranking
2233

Overview

Christian Lavoie is affiliated with IBM in the United States and has a research focus spanning Engineering, Physics and Astronomy, and Materials Science. Their work notably intersects subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, and Materials Chemistry, alongside contributions to Ecology and Polymers and Plastics.

Lavoie's research centers on semiconductor materials and devices, with specific attention to semiconductor materials and interfaces, phase-change materials and chalcogenides, chalcogenide semiconductor thin films, surface and thin film phenomena, transition metal oxide nanomaterials, and perovskite materials and applications.

The scientist has contributed papers to various publication venues, with frequent appearances in the Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Scientific Reports, Journal of Applied Physics, ECS Meeting Abstracts, and the 2021 IEEE International Electron Devices Meeting (IEDM).

Recent publications include:

  • Fifteen years of lessons from the Seascape approach: A framework for improving ocean management at scale (2021), Conservation Science and Practice
  • Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory (2021), 2021 IEEE International Electron Devices Meeting (IEDM)
  • Quantifying the probability of detection of wild ungulates with the Judas technique (2022), Conservation Biology
  • Identification of structural phases in ferroelectric hafnium zirconium oxide by density-functional-theory-assisted EXAFS analysis (2021), Applied Physics Letters
  • Mapping of the mechanical response in Si/SiGe nanosheet device geometries (2022), Communications Engineering

Lavoie has collaborated frequently with several coauthors, including Jean Jordan-Sweet, G. M. Cohen, Marinus Hopstaken, A. Grun, and Tuan T. Tran.

Best Publications

  • Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

    R. Martel;V. Derycke;C. Lavoie;J. Appenzeller

  • Towards implementation of a nickel silicide process for CMOS technologies

    C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral

  • Self-aligned process for nanotube/nanowire FETs

    Phaedon Avouris;Roy A. Carruthers;Jia Chen;Christopher G. M. M. Detavernier

  • Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

    J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  • Thin film reaction of transition metals with germanium

    S Gaudet;Christophe Detavernier;Aj Kellock;P Desjardins

  • Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

    Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang

  • An off-normal fibre-like texture in thin films on single-crystal substrates

    Christophe Detavernier;Christophe Detavernier;As Ozcan;J Jordan-Sweet;Ea Stach

  • Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

    D.D. Perovic;M.R. Castell;A. Howie;C. Lavoie

  • Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

    Zhen Zhang;F Pagette;C D'Emic;B Yang

  • In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

    W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet

  • Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

    H. Kim;C. Cabral;C. Lavoie;S. M. Rossnagel

  • High- $\kappa$ /Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

    M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie

  • High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation

    D. Deduytsche;C. Detavernier;R. L. Van Meirhaeghe;C. Lavoie

  • Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films

    C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle

  • Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap

    Shane R. Johnson;Christian Lavoie;Mark K. Nissen;J. Thomas Tiedje

  • In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

    W. Knaepen;S. Gaudet;C. Detavernier;R. L. Van Meirhaeghe

  • FinFET performance advantage at 22nm: An AC perspective

    M. Guillorn;J. Chang;A. Bryant;N. Fuller

  • INFLUENCE OF PT ADDITION ON THE TEXTURE OF NISI ON SI(001)

    Christophe Detavernier;C Lavoie

  • Two gates are better than one [double-gate MOSFET process]

    P.M. Solomon;K.W. Guarini;Y. Zhang;K. Chan

  • A process for making semiconductor devices and semiconductor devices

    Gluschenkov Oleg G;Cyril Cabral;Omer Dokumaci;Christian Lavoie

  • Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy

    S. R. Johnson;C. Lavoie;T. Tiedje;J. A. Mackenzie

Frequent Co-Authors

Cyril Cabral
Cyril Cabral IBM (United States)
Christophe Detavernier
Christophe Detavernier Ghent University
James Mckell Edwin Harper
James Mckell Edwin Harper IBM (United States)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Guy M. Cohen
Guy M. Cohen IBM (United States)
Thomas Tiedje
Thomas Tiedje University of Victoria
Vijay Narayanan
Vijay Narayanan IBM (United States)
François M. d'Heurle
François M. d'Heurle IBM (United States)
Kevin K. Chan
Kevin K. Chan IBM (United States)

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