Optoelectronics, Metallurgy, Silicide, Thin film and X-ray crystallography are his primary areas of study. His Optoelectronics research is multidisciplinary, relying on both Substrate, Gate oxide, Electronic engineering and MOSFET. Silicide is the subject of his research, which falls under Silicon.
The study incorporates disciplines such as Annealing and Chemical engineering in addition to Silicon. His Thin film research is multidisciplinary, incorporating perspectives in Transmission electron microscopy, Single crystal and Texture. His X-ray crystallography research integrates issues from Crystallography, Amorphous solid and Activation energy, Analytical chemistry.
His primary areas of study are Silicide, Optoelectronics, Metallurgy, Annealing and Thin film. In most of his Silicide studies, his work intersects topics such as Substrate. His Optoelectronics research incorporates themes from Field-effect transistor, Electronic engineering, Electrical engineering and Gate oxide.
His Metallurgy study combines topics in areas such as Amorphous solid and Chemical engineering. His Annealing research incorporates elements of Tin and Electrical resistivity and conductivity. He combines subjects such as Crystallography, Microstructure, Nucleation and Analytical chemistry with his study of Thin film.
Christian Lavoie mostly deals with Silicide, Optoelectronics, Epitaxy, Metallurgy and Nickel. His studies in Silicide integrate themes in fields like Annealing, Texture, Microelectronics and Analytical chemistry. His Optoelectronics study combines topics from a wide range of disciplines, such as Layer and Electrical resistivity and conductivity.
In his study, which falls under the umbrella issue of Layer, Composite material and Electron transmission is strongly linked to Metal. His research in Epitaxy intersects with topics in Scattering, Nucleation, Thin film, Dopant and Substrate. His Silicon study integrates concerns from other disciplines, such as Electrical contacts and Chemical vapor deposition.
His main research concerns Silicide, Optoelectronics, Epitaxy, Texture and Germanide. His Silicide study contributes to a more complete understanding of Silicon. The various areas that he examines in his Optoelectronics study include Alloy, Metallurgy, Electronic engineering and Electrical resistivity and conductivity.
The Metallurgy study combines topics in areas such as Semiconductor device, Dielectric layer and Polycrystalline silicon. His research integrates issues of Copper interconnect, Annealing, Surface reconstruction, Conductivity and CMOS in his study of Electrical resistivity and conductivity. His work carried out in the field of Epitaxy brings together such families of science as Electrical contacts and Substrate.
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Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.
R. Martel;V. Derycke;C. Lavoie;J. Appenzeller.
Physical Review Letters (2001)
Towards implementation of a nickel silicide process for CMOS technologies
C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral.
Microelectronic Engineering (2003)
Self-aligned process for nanotube/nanowire FETs
Phaedon Avouris;Roy A. Carruthers;Jia Chen;Christopher G. M. M. Detavernier.
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang.
international electron devices meeting (2002)
Thin film reaction of transition metals with germanium
S Gaudet;Christophe Detavernier;Aj Kellock;P Desjardins.
Journal of Vacuum Science and Technology (2006)
Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang.
An off-normal fibre-like texture in thin films on single-crystal substrates
Christophe Detavernier;Christophe Detavernier;As Ozcan;J Jordan-Sweet;Ea Stach.
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
D.D. Perovic;M.R. Castell;A. Howie;C. Lavoie.
Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources
Zhen Zhang;F Pagette;C D'Emic;B Yang.
IEEE Electron Device Letters (2010)
In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet.
Thin Solid Films (2008)
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