D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 51 Citations 9,673 313 World Ranking 6741 National Ranking 1833

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Composite material

Optoelectronics, Metallurgy, Silicide, Thin film and X-ray crystallography are his primary areas of study. His Optoelectronics research is multidisciplinary, relying on both Substrate, Gate oxide, Electronic engineering and MOSFET. Silicide is the subject of his research, which falls under Silicon.

The study incorporates disciplines such as Annealing and Chemical engineering in addition to Silicon. His Thin film research is multidisciplinary, incorporating perspectives in Transmission electron microscopy, Single crystal and Texture. His X-ray crystallography research integrates issues from Crystallography, Amorphous solid and Activation energy, Analytical chemistry.

His most cited work include:

  • Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. (668 citations)
  • Towards implementation of a nickel silicide process for CMOS technologies (347 citations)
  • Self-aligned process for nanotube/nanowire FETs (203 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Silicide, Optoelectronics, Metallurgy, Annealing and Thin film. In most of his Silicide studies, his work intersects topics such as Substrate. His Optoelectronics research incorporates themes from Field-effect transistor, Electronic engineering, Electrical engineering and Gate oxide.

His Metallurgy study combines topics in areas such as Amorphous solid and Chemical engineering. His Annealing research incorporates elements of Tin and Electrical resistivity and conductivity. He combines subjects such as Crystallography, Microstructure, Nucleation and Analytical chemistry with his study of Thin film.

He most often published in these fields:

  • Silicide (42.60%)
  • Optoelectronics (33.84%)
  • Metallurgy (26.59%)

What were the highlights of his more recent work (between 2013-2021)?

  • Silicide (42.60%)
  • Optoelectronics (33.84%)
  • Epitaxy (11.48%)

In recent papers he was focusing on the following fields of study:

Christian Lavoie mostly deals with Silicide, Optoelectronics, Epitaxy, Metallurgy and Nickel. His studies in Silicide integrate themes in fields like Annealing, Texture, Microelectronics and Analytical chemistry. His Optoelectronics study combines topics from a wide range of disciplines, such as Layer and Electrical resistivity and conductivity.

In his study, which falls under the umbrella issue of Layer, Composite material and Electron transmission is strongly linked to Metal. His research in Epitaxy intersects with topics in Scattering, Nucleation, Thin film, Dopant and Substrate. His Silicon study integrates concerns from other disciplines, such as Electrical contacts and Chemical vapor deposition.

Between 2013 and 2021, his most popular works were:

  • Challenges of nickel silicidation in CMOS technologies (23 citations)
  • Method for forming metal semiconductor alloys in contact holes and trenches (22 citations)
  • Ti and NiPt/Ti liner silicide contacts for advanced technologies (21 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Composite material

His main research concerns Silicide, Optoelectronics, Epitaxy, Texture and Germanide. His Silicide study contributes to a more complete understanding of Silicon. The various areas that he examines in his Optoelectronics study include Alloy, Metallurgy, Electronic engineering and Electrical resistivity and conductivity.

The Metallurgy study combines topics in areas such as Semiconductor device, Dielectric layer and Polycrystalline silicon. His research integrates issues of Copper interconnect, Annealing, Surface reconstruction, Conductivity and CMOS in his study of Electrical resistivity and conductivity. His work carried out in the field of Epitaxy brings together such families of science as Electrical contacts and Substrate.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

R. Martel;V. Derycke;C. Lavoie;J. Appenzeller.
Physical Review Letters (2001)

1033 Citations

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral.
Microelectronic Engineering (2003)

469 Citations

Self-aligned process for nanotube/nanowire FETs

Phaedon Avouris;Roy A. Carruthers;Jia Chen;Christopher G. M. M. Detavernier.
(2005)

286 Citations

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang.
international electron devices meeting (2002)

276 Citations

Thin film reaction of transition metals with germanium

S Gaudet;Christophe Detavernier;Aj Kellock;P Desjardins.
Journal of Vacuum Science and Technology (2006)

260 Citations

Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors

Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang.
(2006)

245 Citations

An off-normal fibre-like texture in thin films on single-crystal substrates

Christophe Detavernier;Christophe Detavernier;As Ozcan;J Jordan-Sweet;Ea Stach.
Nature (2003)

231 Citations

Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

D.D. Perovic;M.R. Castell;A. Howie;C. Lavoie.
Ultramicroscopy (1995)

222 Citations

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Zhen Zhang;F Pagette;C D'Emic;B Yang.
IEEE Electron Device Letters (2010)

209 Citations

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet.
Thin Solid Films (2008)

175 Citations

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