The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Christian Lavoie sits on this spectrum.
This scientist: 338 publications — 68th percentile
68% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Christian Lavoie sits on this spectrum.
This scientist: 53 D-Index — 30th percentile
30% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Christian Lavoie is affiliated with IBM in the United States and has a research focus spanning Engineering, Physics and Astronomy, and Materials Science. Their work notably intersects subfields such as Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, and Materials Chemistry, alongside contributions to Ecology and Polymers and Plastics.
Lavoie's research centers on semiconductor materials and devices, with specific attention to semiconductor materials and interfaces, phase-change materials and chalcogenides, chalcogenide semiconductor thin films, surface and thin film phenomena, transition metal oxide nanomaterials, and perovskite materials and applications.
The scientist has contributed papers to various publication venues, with frequent appearances in the Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Scientific Reports, Journal of Applied Physics, ECS Meeting Abstracts, and the 2021 IEEE International Electron Devices Meeting (IEDM).
Recent publications include:
Lavoie has collaborated frequently with several coauthors, including Jean Jordan-Sweet, G. M. Cohen, Marinus Hopstaken, A. Grun, and Tuan T. Tran.
R. Martel;V. Derycke;C. Lavoie;J. Appenzeller
C. Lavoie;F. M. d'Heurle;C. Detavernier;C. Cabral
Phaedon Avouris;Roy A. Carruthers;Jia Chen;Christopher G. M. M. Detavernier
J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang
S Gaudet;Christophe Detavernier;Aj Kellock;P Desjardins
Scott D. Allen;Cyril Cabral;Kevin K. Dezfulian;Sunfei Fang
Christophe Detavernier;Christophe Detavernier;As Ozcan;J Jordan-Sweet;Ea Stach
D.D. Perovic;M.R. Castell;A. Howie;C. Lavoie
Zhen Zhang;F Pagette;C D'Emic;B Yang
W. Knaepen;C. Detavernier;R.L. Van Meirhaeghe;J. Jordan Sweet
H. Kim;C. Cabral;C. Lavoie;S. M. Rossnagel
M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie
D. Deduytsche;C. Detavernier;R. L. Van Meirhaeghe;C. Lavoie
C. Lavoie;C. Detavernier;C. Cabral;F. M. d'Heurle
Shane R. Johnson;Christian Lavoie;Mark K. Nissen;J. Thomas Tiedje
W. Knaepen;S. Gaudet;C. Detavernier;R. L. Van Meirhaeghe
M. Guillorn;J. Chang;A. Bryant;N. Fuller
Christophe Detavernier;C Lavoie
P.M. Solomon;K.W. Guarini;Y. Zhang;K. Chan
Gluschenkov Oleg G;Cyril Cabral;Omer Dokumaci;Christian Lavoie
S. R. Johnson;C. Lavoie;T. Tiedje;J. A. Mackenzie
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