Thomas Tiedje

Research.com Recognitions

• 1987 - Fellow of American Physical Society (APS) Citation For his contributions to the understanding of electrical transport in amorphous semiconductors and for his pioneering work on amorphous semiconductor superlattices
• The Canadian Academy of Engineering
• The Canadian Academy of Engineering
• The Canadian Academy of Engineering

Overview

Best Publications

• Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon

  G. D. Cody;T. Tiedje;B. Abeles;B. Brooks

  1530
  Citations

• Limiting efficiency of silicon solar cells

  T. Tiedje;E. Yablonovitch;G.D. Cody;B.G. Brooks

  1165
  Citations

• A physical interpretation of dispersive transport in disordered semiconductors

  T. Tiedje;A. Rose

  885
  Citations

• Evidence for Exponential Band Tails in Amorphous Silicon Hydride

  T. Tiedje;J. M. Cebulka;D. L. Morel;B. Abeles

  629
  Citations

• Molecular beam epitaxy growth of GaAs1−xBix

  S. Tixier;M. Adamcyk;T. Tiedje;S. Francoeur

  621
  Citations

• Amorphous Semiconductor Superlattices

  B. Abeles;T. Tiedje

  611
  Citations

• Band gap of GaAs1−xBix, 0<x<3.6%

  S. Francoeur;M.-J. Seong;A. Mascarenhas;S. Tixier

  582
  Citations

• Giant spin-orbit bowing in GaAs1-xBix.

  B. Fluegel;S. Francoeur;A. Mascarenhas;S. Tixier

  570
  Citations

• Temperature dependence of the Urbach edge in GaAs

  S. R. Johnson;T. Tiedje

  250
  Citations

• Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

  D.D. Perovic;M.R. Castell;A. Howie;C. Lavoie

  232
  Citations

• Optical absorption edge of semi-insulating GaAs and InP at high temperatures

  M. Beaudoin;A. J.G. DeVries;Shane Johnson;H. Laman

  231
  Citations

• The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

  Z. Batool;K. Hild;Thomas Jeffrey Cockburn Hosea;X. Lu

  227
  Citations

• Composition dependence of photoluminescence of GaAs1-xBix alloys

  Xianfeng Lu;D. A. Beaton;R. B. Lewis;T. Tiedje

  218
  Citations

• Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

  X. Lu;D. A. Beaton;R. B. Lewis;T. Tiedje

  209
  Citations

• Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

  R. B. Lewis;M. Masnadi-Shirazi;T. Tiedje

  195
  Citations

• OBSERVATION OF LEAKY SLAB MODES IN AN AIR-BRIDGED SEMICONDUCTOR WAVEGUIDE WITH A TWO-DIMENSIONAL PHOTONIC LATTICE

  M. Kanskar;P. Paddon;V. Pacradouni;R. Morin

  193
  Citations

• Recombination centers in phosphorous doped hydrogenated amorphous silicon

  C.R. Wronski;B. Abeles;T. Tiedje;G.D. Cody

  179
  Citations

• Preparation and characterization of B x C 1 − x thin films with the graphite structure

  B. M. Way;J. R. Dahn;T. Tiedje;K. Myrtle

  177
  Citations

• Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy

  David Cooke;F. A. Hegmann;E. C. Young;T. Tiedje

  160
  Citations

• Band tail recombination limit to the output voltage of amorphous silicon solar cells

  T. Tiedje

  154
  Citations

• DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON

  G.D. Cody;T. Tiedje;B. Abeles;T.D. Moustakas

  27
  Citations