World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
61
Citations
15285
World Ranking
6702
National Ranking
116

Thomas Tiedje publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Thomas Tiedje sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 279 publications — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Thomas Tiedje D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas Tiedje sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 1987 - Fellow of American Physical Society (APS) Citation For his contributions to the understanding of electrical transport in amorphous semiconductors and for his pioneering work on amorphous semiconductor superlattices
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering
  • The Canadian Academy of Engineering

Overview

Thomas Tiedje is affiliated with the University of Victoria in Canada and specializes in engineering with a focus on electrical and electronic engineering. Their research spans several subfields including civil and structural engineering, atomic and molecular physics and optics, and materials chemistry.

The main areas of scientific investigation include solar cell performance optimization, chalcogenide semiconductor thin films, advanced semiconductor detectors and materials, silicon and solar cell technologies, thin-film transistor technologies, thermal radiation and cooling technologies, as well as semiconductor quantum structures and devices.

They have published research articles in various journals. Recent papers include:

  • "Temperature and Intensity Dependence of the Limiting Efficiency of Silicon Solar Cells," 2020, IEEE Journal of Photovoltaics
  • "Luminescent coupling and efficiency of bifacial GaAs/Si tandem solar cells," 2022, Solar Energy Materials and Solar Cells
  • "Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures," 2023, Journal of Materials Science Materials in Electronics
  • "Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S," 2024, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
  • "Composition of oxide on CdZnTe surface and changes caused by X-ray exposure," 2025, Journal of Materials Science Materials in Electronics

Frequent coauthors throughout their work include:

  • D. Akira Engelbrecht
  • Hao Yuan
  • Yuxin Song
  • R. A. Synowicki
  • Zahida Batool

Thomas Tiedje has contributed to multiple publications in key venues such as:

  • Journal of Materials Science Materials in Electronics (2 publications)
  • IEEE Journal of Photovoltaics (1 publication)
  • Solar Energy Materials and Solar Cells (1 publication)
  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (1 publication)

Recognized in their field, Thomas Tiedje has received several awards, including

  • Fellow of American Physical Society (APS) in 1987, with a citation for contributions to understanding electrical transport in amorphous semiconductors and pioneering work on amorphous semiconductor superlattices
  • Membership in The Canadian Academy of Engineering

Best Publications

  • Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon

    G. D. Cody;T. Tiedje;B. Abeles;B. Brooks

  • Limiting efficiency of silicon solar cells

    T. Tiedje;E. Yablonovitch;G.D. Cody;B.G. Brooks

  • A physical interpretation of dispersive transport in disordered semiconductors

    T. Tiedje;A. Rose

  • Evidence for Exponential Band Tails in Amorphous Silicon Hydride

    T. Tiedje;J. M. Cebulka;D. L. Morel;B. Abeles

  • Molecular beam epitaxy growth of GaAs1−xBix

    S. Tixier;M. Adamcyk;T. Tiedje;S. Francoeur

  • Amorphous Semiconductor Superlattices

    B. Abeles;T. Tiedje

  • Band gap of GaAs1−xBix, 0<x<3.6%

    S. Francoeur;M.-J. Seong;A. Mascarenhas;S. Tixier

  • Giant spin-orbit bowing in GaAs1-xBix.

    B. Fluegel;S. Francoeur;A. Mascarenhas;S. Tixier

  • Temperature dependence of the Urbach edge in GaAs

    S. R. Johnson;T. Tiedje

  • Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

    D.D. Perovic;M.R. Castell;A. Howie;C. Lavoie

  • Optical absorption edge of semi-insulating GaAs and InP at high temperatures

    M. Beaudoin;A. J.G. DeVries;Shane Johnson;H. Laman

  • The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

    Z. Batool;K. Hild;Thomas Jeffrey Cockburn Hosea;X. Lu

  • Composition dependence of photoluminescence of GaAs1-xBix alloys

    Xianfeng Lu;D. A. Beaton;R. B. Lewis;T. Tiedje

  • Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

    X. Lu;D. A. Beaton;R. B. Lewis;T. Tiedje

  • Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

    R. B. Lewis;M. Masnadi-Shirazi;T. Tiedje

  • OBSERVATION OF LEAKY SLAB MODES IN AN AIR-BRIDGED SEMICONDUCTOR WAVEGUIDE WITH A TWO-DIMENSIONAL PHOTONIC LATTICE

    M. Kanskar;P. Paddon;V. Pacradouni;R. Morin

  • Recombination centers in phosphorous doped hydrogenated amorphous silicon

    C.R. Wronski;B. Abeles;T. Tiedje;G.D. Cody

  • Preparation and characterization of B x C 1 − x thin films with the graphite structure

    B. M. Way;J. R. Dahn;T. Tiedje;K. Myrtle

  • Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy

    David Cooke;F. A. Hegmann;E. C. Young;T. Tiedje

  • Band tail recombination limit to the output voltage of amorphous silicon solar cells

    T. Tiedje

  • DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON

    G.D. Cody;T. Tiedje;B. Abeles;T.D. Moustakas

Frequent Co-Authors

Angelo Mascarenhas
Angelo Mascarenhas National Renewable Energy Laboratory
Christian Lavoie
Christian Lavoie IBM (United States)
Jeff Dahn
Jeff Dahn Dalhousie University
Martin Koch
Martin Koch Philipp University of Marburg
Patricia M. Mooney
Patricia M. Mooney Simon Fraser University
Karen L. Kavanagh
Karen L. Kavanagh Simon Fraser University
Thomas Edward Darcie
Thomas Edward Darcie University of Victoria
Stephan W. Koch
Stephan W. Koch Philipp University of Marburg
Reuven Gordon
Reuven Gordon University of Victoria
Theodore D. Moustakas
Theodore D. Moustakas Boston University

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