World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
81
Citations
26080
World Ranking
2563
National Ranking
808

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Condensed matter physics

Kin Man Yu focuses on Condensed matter physics, Band gap, Photoluminescence, Thin film and Optoelectronics. His work in the fields of Condensed matter physics, such as Curie temperature, Ferromagnetism and Doping, overlaps with other areas such as Hydrostatic pressure. His study in Band gap is interdisciplinary in nature, drawing from both Wide-bandgap semiconductor, Molecular beam epitaxy, Semiconductor and Electronic band structure.

His Thin film research incorporates elements of Crystallography, X-ray crystallography and Raman spectroscopy, Analytical chemistry. The various areas that Kin Man Yu examines in his Analytical chemistry study include Transmission electron microscopy, Annealing and Epitaxy. Kin Man Yu interconnects Transparent conducting film, Ion beam mixing and Surface modification in the investigation of issues within Optoelectronics.

His most cited work include:

  • Unusual properties of the fundamental band gap of InN (1214 citations)
  • Small band gap bowing in In1−xGaxN alloys (517 citations)
  • Observation of crystalline C3N4. (438 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Analytical chemistry, Optoelectronics, Band gap, Condensed matter physics and Thin film. The Analytical chemistry study combines topics in areas such as Ion implantation, Annealing and Molecular beam epitaxy, Epitaxy. His Band gap research is multidisciplinary, incorporating elements of Alloy, Absorption and Electronic band structure.

His research on Condensed matter physics often connects related areas such as Fermi level. His studies deal with areas such as X-ray crystallography, Transmission electron microscopy and Substrate as well as Thin film. His studies examine the connections between Doping and genetics, as well as such issues in Wide-bandgap semiconductor, with regards to Absorption edge.

He most often published in these fields:

  • Analytical chemistry (36.45%)
  • Optoelectronics (29.84%)
  • Band gap (28.71%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (29.84%)
  • Thin film (26.29%)
  • Analytical chemistry (36.45%)

In recent papers he was focusing on the following fields of study:

Kin Man Yu mainly focuses on Optoelectronics, Thin film, Analytical chemistry, Band gap and Doping. His work carried out in the field of Optoelectronics brings together such families of science as Open-circuit voltage and Perovskite. His Thin film research is multidisciplinary, incorporating perspectives in Molecular beam epitaxy, Indium and Deposition.

His Band gap research includes elements of Electrolyte, Atomic physics, Photoluminescence and Electronic band structure. His biological study spans a wide range of topics, including Photovoltaics, Spin coating and Semiconductor. His research investigates the connection between Pulsed laser deposition and topics such as Annealing that intersect with problems in Condensed matter physics.

Between 2015 and 2021, his most popular works were:

  • Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes (117 citations)
  • Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes (117 citations)
  • On-Nanowire Axial Heterojunction Design for High-Performance Photodetectors (52 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Atom

The scientist’s investigation covers issues in Thin film, Optoelectronics, Doping, Analytical chemistry and Band gap. His Optoelectronics study integrates concerns from other disciplines, such as Open-circuit voltage and Organic solar cell. Kin Man Yu has included themes like Valence band, Oxide and Molecular beam epitaxy in his Doping study.

His work deals with themes such as Alloy, Halide and Annealing, which intersect with Analytical chemistry. Kin Man Yu is studying Direct and indirect band gaps, which is a component of Band gap. He has researched Condensed matter physics in several fields, including Beam and Epitaxy.

Best Publications

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature

    K. M. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn

  • Observation of crystalline C3N4.

    Kin Man Yu;Marvin L. Cohen;Marvin L. Cohen;E. E. Haller;E. E. Haller;W. L. Hansen

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Temperature dependence of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Valence band anticrossing in mismatched III-V semiconductor alloys

    K. Alberi;J. Wu;J. Wu;W. Walukiewicz;K. M. Yu

  • Valence band anticrossing in GaBixAs1−x

    K. Alberi;O. D. Dubon;W. Walukiewicz;K. M. Yu

  • Fermi-level stabilization energy in group III nitrides

    S. X. Li;S. X. Li;K. M. Yu;J. Wu;R. E. Jones;R. E. Jones

  • Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

    K. M. Yu;W. Walukiewicz;J. Wu;W. Shan

  • Engineering the electronic band structure for multiband solar cells.

    N. López;L. A. Reichertz;K. M. Yu;K. Campman

  • Nature of Room-temperature Photoluminescence in ZnO

    W. Shan;W. Walukiewicz;J.W. Ager Iii;K.M. Yu

  • Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

    C. Skierbiszewski;P. Perlin;P. Wisniewski;W. Knap

  • Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes

    Francesca M. Toma;Jason K. Cooper;Viktoria Kunzelmann;Viktoria Kunzelmann;Matthew T. McDowell;Matthew T. McDowell

  • Structure and electronic properties of InN and In-rich group III-nitride alloys

    W Walukiewicz;J W Ager;K M Yu;Z Liliental-Weber

  • Nature of the fundamental band gap in GaNxP1−x alloys

    W. Shan;W. Walukiewicz;K. M. Yu;J. Wu

  • Evidence for p-type doping of InN

    R. E. Jones;R. E. Jones;K. M. Yu;S. X. Li;S. X. Li;W. Walukiewicz

  • Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

    W. Walukiewicz;W. Shan;K.M. Yu;J.W. Ager Iii

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

Frequent Co-Authors

Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Junqiao Wu
Junqiao Wu University of California, Berkeley
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
William J. Schaff
William J. Schaff Cornell University
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
Ian G. Brown
Ian G. Brown Lawrence Berkeley National Laboratory
Ian D. Sharp
Ian D. Sharp Technical University of Munich
Qixin Guo
Qixin Guo Saga University

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