World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
81
Citations
26080
World Ranking
2561
National Ranking
809

Kin Man Yu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kin Man Yu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 673 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kin Man Yu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kin Man Yu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 81 D-Index — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Condensed matter physics

Kin Man Yu focuses on Condensed matter physics, Band gap, Photoluminescence, Thin film and Optoelectronics. His work in the fields of Condensed matter physics, such as Curie temperature, Ferromagnetism and Doping, overlaps with other areas such as Hydrostatic pressure. His study in Band gap is interdisciplinary in nature, drawing from both Wide-bandgap semiconductor, Molecular beam epitaxy, Semiconductor and Electronic band structure.

His Thin film research incorporates elements of Crystallography, X-ray crystallography and Raman spectroscopy, Analytical chemistry. The various areas that Kin Man Yu examines in his Analytical chemistry study include Transmission electron microscopy, Annealing and Epitaxy. Kin Man Yu interconnects Transparent conducting film, Ion beam mixing and Surface modification in the investigation of issues within Optoelectronics.

His most cited work include:

  • Unusual properties of the fundamental band gap of InN (1214 citations)
  • Small band gap bowing in In1−xGaxN alloys (517 citations)
  • Observation of crystalline C3N4. (438 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Analytical chemistry, Optoelectronics, Band gap, Condensed matter physics and Thin film. The Analytical chemistry study combines topics in areas such as Ion implantation, Annealing and Molecular beam epitaxy, Epitaxy. His Band gap research is multidisciplinary, incorporating elements of Alloy, Absorption and Electronic band structure.

His research on Condensed matter physics often connects related areas such as Fermi level. His studies deal with areas such as X-ray crystallography, Transmission electron microscopy and Substrate as well as Thin film. His studies examine the connections between Doping and genetics, as well as such issues in Wide-bandgap semiconductor, with regards to Absorption edge.

He most often published in these fields:

  • Analytical chemistry (36.45%)
  • Optoelectronics (29.84%)
  • Band gap (28.71%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (29.84%)
  • Thin film (26.29%)
  • Analytical chemistry (36.45%)

In recent papers he was focusing on the following fields of study:

Kin Man Yu mainly focuses on Optoelectronics, Thin film, Analytical chemistry, Band gap and Doping. His work carried out in the field of Optoelectronics brings together such families of science as Open-circuit voltage and Perovskite. His Thin film research is multidisciplinary, incorporating perspectives in Molecular beam epitaxy, Indium and Deposition.

His Band gap research includes elements of Electrolyte, Atomic physics, Photoluminescence and Electronic band structure. His biological study spans a wide range of topics, including Photovoltaics, Spin coating and Semiconductor. His research investigates the connection between Pulsed laser deposition and topics such as Annealing that intersect with problems in Condensed matter physics.

Between 2015 and 2021, his most popular works were:

  • Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes (117 citations)
  • Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes (117 citations)
  • On-Nanowire Axial Heterojunction Design for High-Performance Photodetectors (52 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Atom

The scientist’s investigation covers issues in Thin film, Optoelectronics, Doping, Analytical chemistry and Band gap. His Optoelectronics study integrates concerns from other disciplines, such as Open-circuit voltage and Organic solar cell. Kin Man Yu has included themes like Valence band, Oxide and Molecular beam epitaxy in his Doping study.

His work deals with themes such as Alloy, Halide and Annealing, which intersect with Analytical chemistry. Kin Man Yu is studying Direct and indirect band gaps, which is a component of Band gap. He has researched Condensed matter physics in several fields, including Beam and Epitaxy.

Best Publications

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature

    K. M. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn

  • Observation of crystalline C3N4.

    Kin Man Yu;Marvin L. Cohen;Marvin L. Cohen;E. E. Haller;E. E. Haller;W. L. Hansen

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Temperature dependence of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Valence band anticrossing in mismatched III-V semiconductor alloys

    K. Alberi;J. Wu;J. Wu;W. Walukiewicz;K. M. Yu

  • Valence band anticrossing in GaBixAs1−x

    K. Alberi;O. D. Dubon;W. Walukiewicz;K. M. Yu

  • Fermi-level stabilization energy in group III nitrides

    S. X. Li;S. X. Li;K. M. Yu;J. Wu;R. E. Jones;R. E. Jones

  • Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

    K. M. Yu;W. Walukiewicz;J. Wu;W. Shan

  • Engineering the electronic band structure for multiband solar cells.

    N. López;L. A. Reichertz;K. M. Yu;K. Campman

  • Nature of Room-temperature Photoluminescence in ZnO

    W. Shan;W. Walukiewicz;J.W. Ager Iii;K.M. Yu

  • Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

    C. Skierbiszewski;P. Perlin;P. Wisniewski;W. Knap

  • Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes

    Francesca M. Toma;Jason K. Cooper;Viktoria Kunzelmann;Viktoria Kunzelmann;Matthew T. McDowell;Matthew T. McDowell

  • Structure and electronic properties of InN and In-rich group III-nitride alloys

    W Walukiewicz;J W Ager;K M Yu;Z Liliental-Weber

  • Nature of the fundamental band gap in GaNxP1−x alloys

    W. Shan;W. Walukiewicz;K. M. Yu;J. Wu

  • Evidence for p-type doping of InN

    R. E. Jones;R. E. Jones;K. M. Yu;S. X. Li;S. X. Li;W. Walukiewicz

  • Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

    W. Walukiewicz;W. Shan;K.M. Yu;J.W. Ager Iii

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

Frequent Co-Authors

Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Junqiao Wu
Junqiao Wu University of California, Berkeley
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
William J. Schaff
William J. Schaff Cornell University
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
Ian G. Brown
Ian G. Brown Lawrence Berkeley National Laboratory
Ian D. Sharp
Ian D. Sharp Technical University of Munich
Qixin Guo
Qixin Guo Saga University

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