Kin Man Yu focuses on Condensed matter physics, Band gap, Photoluminescence, Thin film and Optoelectronics. His work in the fields of Condensed matter physics, such as Curie temperature, Ferromagnetism and Doping, overlaps with other areas such as Hydrostatic pressure. His study in Band gap is interdisciplinary in nature, drawing from both Wide-bandgap semiconductor, Molecular beam epitaxy, Semiconductor and Electronic band structure.
His Thin film research incorporates elements of Crystallography, X-ray crystallography and Raman spectroscopy, Analytical chemistry. The various areas that Kin Man Yu examines in his Analytical chemistry study include Transmission electron microscopy, Annealing and Epitaxy. Kin Man Yu interconnects Transparent conducting film, Ion beam mixing and Surface modification in the investigation of issues within Optoelectronics.
His primary areas of study are Analytical chemistry, Optoelectronics, Band gap, Condensed matter physics and Thin film. The Analytical chemistry study combines topics in areas such as Ion implantation, Annealing and Molecular beam epitaxy, Epitaxy. His Band gap research is multidisciplinary, incorporating elements of Alloy, Absorption and Electronic band structure.
His research on Condensed matter physics often connects related areas such as Fermi level. His studies deal with areas such as X-ray crystallography, Transmission electron microscopy and Substrate as well as Thin film. His studies examine the connections between Doping and genetics, as well as such issues in Wide-bandgap semiconductor, with regards to Absorption edge.
Kin Man Yu mainly focuses on Optoelectronics, Thin film, Analytical chemistry, Band gap and Doping. His work carried out in the field of Optoelectronics brings together such families of science as Open-circuit voltage and Perovskite. His Thin film research is multidisciplinary, incorporating perspectives in Molecular beam epitaxy, Indium and Deposition.
His Band gap research includes elements of Electrolyte, Atomic physics, Photoluminescence and Electronic band structure. His biological study spans a wide range of topics, including Photovoltaics, Spin coating and Semiconductor. His research investigates the connection between Pulsed laser deposition and topics such as Annealing that intersect with problems in Condensed matter physics.
The scientist’s investigation covers issues in Thin film, Optoelectronics, Doping, Analytical chemistry and Band gap. His Optoelectronics study integrates concerns from other disciplines, such as Open-circuit voltage and Organic solar cell. Kin Man Yu has included themes like Valence band, Oxide and Molecular beam epitaxy in his Doping study.
His work deals with themes such as Alloy, Halide and Annealing, which intersect with Analytical chemistry. Kin Man Yu is studying Direct and indirect band gaps, which is a component of Band gap. He has researched Condensed matter physics in several fields, including Beam and Epitaxy.
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Unusual properties of the fundamental band gap of InN
J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager.
Applied Physics Letters (2002)
Small band gap bowing in In1−xGaxN alloys
J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager.
Applied Physics Letters (2002)
Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature
K. M. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn.
Physical Review B (2002)
Observation of crystalline C3N4.
Kin Man Yu;Marvin L. Cohen;Marvin L. Cohen;E. E. Haller;E. E. Haller;W. L. Hansen.
Physical Review B (1994)
Effects of the narrow band gap on the properties of InN
J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu.
Physical Review B (2002)
Temperature dependence of the fundamental band gap of InN
J. Wu;W. Walukiewicz;W. Shan;K. M. Yu.
Journal of Applied Physics (2003)
Valence band anticrossing in GaBixAs1−x
K. Alberi;O. D. Dubon;W. Walukiewicz;K. M. Yu.
Applied Physics Letters (2007)
Valence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi;J. Wu;J. Wu;W. Walukiewicz;K. M. Yu.
Physical Review B (2007)
Fermi-level stabilization energy in group III nitrides
S. X. Li;S. X. Li;K. M. Yu;J. Wu;R. E. Jones;R. E. Jones.
Physical Review B (2005)
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
K. M. Yu;W. Walukiewicz;J. Wu;W. Shan.
Physical Review Letters (2003)
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