World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
115
Citations
52515
World Ranking
575
National Ranking
206

Overview

Junqiao Wu is affiliated with the University of California, Berkeley in the United States. Their research spans several fields, with a strong focus on engineering and materials science. Within these areas, Wu has contributed extensively to subfields such as materials chemistry, electrical and electronic engineering, civil and structural engineering, atomic and molecular physics and optics, and biomedical engineering.

The research topics that Wu has worked on include thermal radiation and cooling technologies, graphene research and applications, transition metal oxide nanomaterials, thermal properties of materials, 2D materials and applications, photonic and optical devices, and advanced thermoelectric materials and devices.

Wu has published papers in various scientific venues, frequently contributing to journals and platforms such as:

  • Nature Communications
  • Nano Letters
  • Physical Review Letters
  • arXiv (Cornell University)
  • Advanced Materials

Some of Wu's recent publications include:

  • Temperature-adaptive radiative coating for all-season household thermal regulation, 2021, Science
  • Thermal camouflaging metamaterials, 2021, Materials Today
  • Flat Bands in Magic-Angle Bilayer Photonic Crystals at Small Twists, 2021, Physical Review Letters
  • Nonflammable, localized high-concentration electrolyte towards a high-safety lithium metal battery, 2022, Energy Storage Materials
  • A Thermal Radiation Modulation Platform by Emissivity Engineering with Graded Metal-Insulator Transition, 2020, Advanced Materials

Wu collaborates frequently with several researchers, including Costas P. Grigoropoulos, Kaichen Dong, Jie Yao, Jiachen Li, and Kechao Tang.

Best Publications

  • Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures

    Xiaoping Hong;Jonghwan Kim;Su Fei Shi;Yu Zhang

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Band offsets and heterostructures of two-dimensional semiconductors

    Jun Kang;Sefaattin Tongay;Jian Zhou;Jingbo Li

  • Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2

    Sefaattin Tongay;Jian Zhou;Can Ataca;Kelvin Lo

  • Observation of a broad structure in the pi(+)pi(-)J/psi mass spectrum around 4.26 GeV/c(2)

    B. Aubert;R. Barate;D. Boutigny;F. Couderc

  • Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    Sefaattin Tongay;Joonki Suh;Joonki Suh;Can Ataca;Wen Fan

  • When group-III nitrides go infrared: New properties and perspectives

    Junqiao Wu

  • The BABAR detector: Upgrades, operation and performance

    B. Aubert;R. Barate;D. Boutigny;F. Couderc

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

    Sefaattin Tongay;Wen Fan;Wen Fan;Jun Kang;Joonsuk Park

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

    Sefaattin Tongay;Jian Zhou;Can Ataca;Jonathan Liu

  • Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

    Joonki Suh;Tae Eon Park;Der Yuh Lin;Deyi Fu

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams

    J. Cao;J. Cao;E. Ertekin;V. Srinivasan;W. Fan;W. Fan

  • Search for lepton flavor violation in the decay τ±→ e±γ

    B. Aubert;R. Barate;D. Boutigny;F. Couderc

  • The Physics of the B Factories

    A. J. Bevan;B. Golob;Th Mannel;S. Prell

  • Two-Dimensional Materials for Thermal Management Applications

    Houfu Song;Jiaman Liu;Bilu Liu;Junqiao Wu;Junqiao Wu

  • Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

    H. Sahin;S. Tongay;S. Horzum;S. Horzum;W. Fan

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures.

    Kai Liu;Qimin Yan;Michelle Chen;Wen Fan;Wen Fan

Frequent Co-Authors

Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Kin Man Yu
Kin Man Yu City University of Hong Kong
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Sefaattin Tongay
Sefaattin Tongay Arizona State University
Kai Liu
Kai Liu Tsinghua University
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
William J. Schaff
William J. Schaff Cornell University
Feng Wang
Feng Wang University of California, Berkeley
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Chun Cheng
Chun Cheng Southern University of Science and Technology

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