2006 - Fellow of American Physical Society (APS) Citation For seminal contributions in the areas of amphoteric defects in semiconductors GroupIII nitrides the effect of Mn interstitials in ferromagnetic semiconductors and the formulation of the band structure of highlymismatched semiconductor alloys
The scientist’s investigation covers issues in Condensed matter physics, Band gap, Photoluminescence, Analytical chemistry and Optoelectronics. His study in Condensed matter physics is interdisciplinary in nature, drawing from both Fermi level and Semiconductor. His study on Direct and indirect band gaps is often connected to Hydrostatic pressure as part of broader study in Band gap.
His studies deal with areas such as Absorption, Emission spectrum, Exciton and Epitaxy as well as Photoluminescence. His Analytical chemistry research includes themes of Crystallization, Annealing, Chemical vapor deposition and Nitride. His Optoelectronics research is multidisciplinary, relying on both Sapphire, Irradiation and Solar energy.
His primary scientific interests are in Condensed matter physics, Band gap, Optoelectronics, Analytical chemistry and Doping. He combines subjects such as Electron, Fermi level and Semiconductor with his study of Condensed matter physics. The Band gap study combines topics in areas such as Molecular beam epitaxy, Photoluminescence and Electronic band structure.
The various areas that Wladek Walukiewicz examines in his Optoelectronics study include Photovoltaics, Photovoltaic system and Nitride. His biological study spans a wide range of topics, including Epitaxy, Thin film, Annealing, Absorption and Ion implantation. His Doping study combines topics in areas such as Silicon, Impurity, Heterojunction and Electrical resistivity and conductivity.
Wladek Walukiewicz mostly deals with Band gap, Optoelectronics, Analytical chemistry, Doping and Thin film. His Band gap study results in a more complete grasp of Condensed matter physics. Wladek Walukiewicz has researched Optoelectronics in several fields, including Photovoltaics, Photovoltaic system, Molecular beam epitaxy and Open-circuit voltage.
His research in Analytical chemistry intersects with topics in Amorphous solid, Absorption, Phase, Alloy and Substrate. His work deals with themes such as Electron and Tunnel junction, which intersect with Doping. The study incorporates disciplines such as Indium, Electrical resistivity and conductivity and Conductivity in addition to Thin film.
Electronic band structure, Band gap, Condensed matter physics, Optoelectronics and Semiconductor are his primary areas of study. His studies in Electronic band structure integrate themes in fields like Pulsed laser deposition, Doping, Photoluminescence and Nitride. His Band gap research is multidisciplinary, incorporating elements of Thin film, Wide-bandgap semiconductor and Crystallinity.
His Condensed matter physics study frequently draws parallels with other fields, such as Fermi level. He has included themes like Photovoltaics, Organic solar cell and Photovoltaic system in his Optoelectronics study. His Semiconductor research incorporates themes from Electron density, Electronic structure, Absorption and Electronegativity.
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Band Anticrossing in GaInNAs Alloys
W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller.
Physical Review Letters (1999)
Unusual properties of the fundamental band gap of InN
J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager.
Applied Physics Letters (2002)
Small band gap bowing in In1−xGaxN alloys
J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager.
Applied Physics Letters (2002)
Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature
K. M. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn.
Physical Review B (2002)
Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system
J. Wu;W. Walukiewicz;K. M. Yu;W. Shan.
Journal of Applied Physics (2003)
Electron mobility in modulation-doped heterostructures
W. Walukiewicz;H. E. Ruda;J. Lagowski;H. C. Gatos.
Physical Review B (1984)
Effects of the narrow band gap on the properties of InN
J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu.
Physical Review B (2002)
Temperature dependence of the fundamental band gap of InN
J. Wu;W. Walukiewicz;W. Shan;K. M. Yu.
Journal of Applied Physics (2003)
Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio
W. Walukiewicz;J. Lagowski;L. Jastrzebski;P. Rava.
Journal of Applied Physics (1979)
Valence band anticrossing in GaBixAs1−x
K. Alberi;O. D. Dubon;W. Walukiewicz;K. M. Yu.
Applied Physics Letters (2007)
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