D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 83 Citations 27,264 563 World Ranking 1223 National Ranking 434
Physics D-index 83 Citations 26,139 451 World Ranking 2012 National Ranking 1039

Research.com Recognitions

Awards & Achievements

2006 - Fellow of American Physical Society (APS) Citation For seminal contributions in the areas of amphoteric defects in semiconductors GroupIII nitrides the effect of Mn interstitials in ferromagnetic semiconductors and the formulation of the band structure of highlymismatched semiconductor alloys

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

The scientist’s investigation covers issues in Condensed matter physics, Band gap, Photoluminescence, Analytical chemistry and Optoelectronics. His study in Condensed matter physics is interdisciplinary in nature, drawing from both Fermi level and Semiconductor. His study on Direct and indirect band gaps is often connected to Hydrostatic pressure as part of broader study in Band gap.

His studies deal with areas such as Absorption, Emission spectrum, Exciton and Epitaxy as well as Photoluminescence. His Analytical chemistry research includes themes of Crystallization, Annealing, Chemical vapor deposition and Nitride. His Optoelectronics research is multidisciplinary, relying on both Sapphire, Irradiation and Solar energy.

His most cited work include:

  • Band Anticrossing in GaInNAs Alloys (1313 citations)
  • Unusual properties of the fundamental band gap of InN (1214 citations)
  • Small band gap bowing in In1−xGaxN alloys (517 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Condensed matter physics, Band gap, Optoelectronics, Analytical chemistry and Doping. He combines subjects such as Electron, Fermi level and Semiconductor with his study of Condensed matter physics. The Band gap study combines topics in areas such as Molecular beam epitaxy, Photoluminescence and Electronic band structure.

The various areas that Wladek Walukiewicz examines in his Optoelectronics study include Photovoltaics, Photovoltaic system and Nitride. His biological study spans a wide range of topics, including Epitaxy, Thin film, Annealing, Absorption and Ion implantation. His Doping study combines topics in areas such as Silicon, Impurity, Heterojunction and Electrical resistivity and conductivity.

He most often published in these fields:

  • Condensed matter physics (37.97%)
  • Band gap (35.35%)
  • Optoelectronics (29.95%)

What were the highlights of his more recent work (between 2013-2021)?

  • Band gap (35.35%)
  • Optoelectronics (29.95%)
  • Analytical chemistry (27.33%)

In recent papers he was focusing on the following fields of study:

Wladek Walukiewicz mostly deals with Band gap, Optoelectronics, Analytical chemistry, Doping and Thin film. His Band gap study results in a more complete grasp of Condensed matter physics. Wladek Walukiewicz has researched Optoelectronics in several fields, including Photovoltaics, Photovoltaic system, Molecular beam epitaxy and Open-circuit voltage.

His research in Analytical chemistry intersects with topics in Amorphous solid, Absorption, Phase, Alloy and Substrate. His work deals with themes such as Electron and Tunnel junction, which intersect with Doping. The study incorporates disciplines such as Indium, Electrical resistivity and conductivity and Conductivity in addition to Thin film.

Between 2013 and 2021, his most popular works were:

  • Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. (64 citations)
  • Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. (64 citations)
  • Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects (60 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Electronic band structure, Band gap, Condensed matter physics, Optoelectronics and Semiconductor are his primary areas of study. His studies in Electronic band structure integrate themes in fields like Pulsed laser deposition, Doping, Photoluminescence and Nitride. His Band gap research is multidisciplinary, incorporating elements of Thin film, Wide-bandgap semiconductor and Crystallinity.

His Condensed matter physics study frequently draws parallels with other fields, such as Fermi level. He has included themes like Photovoltaics, Organic solar cell and Photovoltaic system in his Optoelectronics study. His Semiconductor research incorporates themes from Electron density, Electronic structure, Absorption and Electronegativity.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Band Anticrossing in GaInNAs Alloys

W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller.
Physical Review Letters (1999)

1994 Citations

Unusual properties of the fundamental band gap of InN

J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager.
Applied Physics Letters (2002)

1908 Citations

Small band gap bowing in In1−xGaxN alloys

J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager.
Applied Physics Letters (2002)

811 Citations

Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature

K. M. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn.
Physical Review B (2002)

669 Citations

Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

J. Wu;W. Walukiewicz;K. M. Yu;W. Shan.
Journal of Applied Physics (2003)

665 Citations

Electron mobility in modulation-doped heterostructures

W. Walukiewicz;H. E. Ruda;J. Lagowski;H. C. Gatos.
Physical Review B (1984)

574 Citations

Effects of the narrow band gap on the properties of InN

J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu.
Physical Review B (2002)

542 Citations

Temperature dependence of the fundamental band gap of InN

J. Wu;W. Walukiewicz;W. Shan;K. M. Yu.
Journal of Applied Physics (2003)

479 Citations

Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz;J. Lagowski;L. Jastrzebski;P. Rava.
Journal of Applied Physics (1979)

428 Citations

Valence band anticrossing in GaBixAs1−x

K. Alberi;O. D. Dubon;W. Walukiewicz;K. M. Yu.
Applied Physics Letters (2007)

407 Citations

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