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Materials Science

D-Index
87
Citations
31607
World Ranking
1941
National Ranking
585

Physics

D-Index
87
Citations
31515
World Ranking
2450
National Ranking
1232

Research.com Recognitions

  • 2006 - Fellow of American Physical Society (APS) Citation For seminal contributions in the areas of amphoteric defects in semiconductors GroupIII nitrides the effect of Mn interstitials in ferromagnetic semiconductors and the formulation of the band structure of highlymismatched semiconductor alloys

Overview

Wladek Walukiewicz is affiliated with the Lawrence Berkeley National Laboratory in the United States. Their research contributions span several fields including Engineering, Physics and Astronomy, and Materials Science. They have published in notable venues such as the Journal of Applied Physics, the International Journal of the Society of Materials Engineering for Resources, and Crystals.

Their scholarly output includes key papers on semiconductor materials and devices as well as thin film technologies. Notable publications include "Highly Mismatched Semiconductor Alloys: From Atoms to Devices" (2020, Journal of Applied Physics), "Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting" (2024, Journal of Applied Physics), "Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping" (2022, International Journal of the Society of Materials Engineering for Resources), and "Annealing Induced Saturation in Electron Concentration for V-Doped CdO" (2021, Crystals).

Their research topics encompass:

  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Advanced Semiconductor Detectors and Materials
  • Ion-surface interactions and analysis
  • Silicon and Solar Cell Technologies
  • Integrated Circuits and Semiconductor Failure Analysis
  • GaN-based semiconductor devices and materials

Frequent coauthors of Wladek Walukiewicz include K. M. Yu, Joshua M. O. Zide, Michael A. Scarpulla, Chun Yuen Ho, and O. D. Dubón.

Within the subfields of study, the scientist focuses on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, as well as Computational Mechanics and Condensed Matter Physics.

Wladek Walukiewicz has been recognized as a Fellow of the American Physical Society (APS) since 2006. The citation highlights seminal contributions in amphoteric defects in semiconductors, Group III nitrides, the effects of Mn interstitials in ferromagnetic semiconductors, and the formulation of the band structure of highly mismatched semiconductor alloys.

Best Publications

  • Band Anticrossing in GaInNAs Alloys

    W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature

    K. M. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn

  • Electron mobility in modulation-doped heterostructures

    W. Walukiewicz;H. E. Ruda;J. Lagowski;H. C. Gatos

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Temperature dependence of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Valence band anticrossing in mismatched III-V semiconductor alloys

    K. Alberi;J. Wu;J. Wu;W. Walukiewicz;K. M. Yu

  • Intrinsic limitations to the doping of wide-gap semiconductors

    W Walukiewicz

  • Valence band anticrossing in GaBixAs1−x

    K. Alberi;O. D. Dubon;W. Walukiewicz;K. M. Yu

  • Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio

    W. Walukiewicz;J. Lagowski;L. Jastrzebski;P. Rava

  • Band anticrossing in highly mismatched III-V semiconductor alloys

    J Wu;J Wu;W Shan;W Walukiewicz

  • Amphoteric native defects in semiconductors

    W. Walukiewicz

  • Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

    J. Lagowski;H. C. Gatos;J. M. Parsey;K. Wada

  • Fermi-level stabilization energy in group III nitrides

    S. X. Li;S. X. Li;K. M. Yu;J. Wu;R. E. Jones;R. E. Jones

  • Native point defects in low-temperature-grown GaAs

    X. Liu;A. Prasad;J. Nishio;E. R. Weber

  • Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

    K. M. Yu;W. Walukiewicz;J. Wu;W. Shan

  • Engineering the electronic band structure for multiband solar cells.

    N. López;L. A. Reichertz;K. M. Yu;K. Campman

  • Nature of Room-temperature Photoluminescence in ZnO

    W. Shan;W. Walukiewicz;J.W. Ager Iii;K.M. Yu

  • High electron mobility transistor (hemt)

    P Smorchkova Ioulia;Chavarkar Prashant;Keller Stacia;Mishra Umesh

Frequent Co-Authors

Kin Man Yu
Kin Man Yu City University of Hong Kong
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Junqiao Wu
Junqiao Wu University of California, Berkeley
William J. Schaff
William J. Schaff Cornell University
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Jacek K. Furdyna
Jacek K. Furdyna University of Notre Dame
Qixin Guo
Qixin Guo Saga University
Samuel S. Mao
Samuel S. Mao Khalifa University

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