Harry C. Gatos

Research.com Recognitions

• 1968 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Best Publications

• Electron mobility in modulation-doped heterostructures

  W. Walukiewicz;H. E. Ruda;J. Lagowski;H. C. Gatos

  586
  Citations

• Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio

  W. Walukiewicz;J. Lagowski;L. Jastrzebski;P. Rava

  440
  Citations

• Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

  J. Lagowski;H. C. Gatos;J. M. Parsey;K. Wada

  395
  Citations

• Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds

  Harry C. Gatos;Mary C. Lavine

  318
  Citations

• Crystallographic Polarity in the II‐VI Compounds

  E. P. Warekois;M. C. Lavine;A. N. Mariano;H. C. Gatos

  310
  Citations

• Surface photovoltage spectroscopy - A new approach to the study of high-gap semiconductor surfaces.

  Harry C. Gatos;Jacek Lagowski

  273
  Citations

• Intracenter transitions in the dominant deep level (EL2) in GaAs

  M. Kaminska;M. Skowronski;J. Lagowski;J. M. Parsey

  264
  Citations

• The Surface Chemistry of Metals and Semiconductors

  Harry C. Gatos;J. W. Faust;W. J. La Fleur;M. Metzger

  237
  Citations

• Quantitative study of the charge transfer in chemisorption; oxygen chemisorption on ZnO

  J. Lagowski;E. S. Sproles;H. C. Gatos

  180
  Citations

• Crystal Growth and Segregation under Zero Gravity: Ge

  A. F. Witt;H. C. Gatos;M. Lichtensteiger;C. J. Herman

  172
  Citations

• Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect

  J. Lagowski;D. G. Lin;T.‐P. Chen;M. Skowronski

  147
  Citations

• Passivation of the dominant deep level (EL2) in GaAs by hydrogen

  J. Lagowski;M. Kaminska;J. M. Parsey;H. C. Gatos

  140
  Citations

• Identification of oxygen‐related midgap level in GaAs

  J. Lagowski;D. G. Lin;T. Aoyama;H. C. Gatos

  138
  Citations

• Electronic characteristics of “real” CdS surfaces

  J. Łagowski;C.L. Balestra;H.C. Gatos

  133
  Citations

• Surface stress and the normal mode of vibration of thin crystals :GaAs

  J. Lagowski;H. C. Gatos;E. S. Sproles

  128
  Citations

• Minority‐carrier mobility in p‐type GaAs

  W. Walukiewicz;J. Lagowski;L. Jastrzebski;H. C. Gatos

  119
  Citations

• Electron mobility in n‐type GaAs at 77 K: Determination of the compensation ratio

  W. Walukiewicz;J. Lagowski;H. C. Gatos

  115
  Citations

• Impurity Distribution in Single Crystals III . Impurity Heterogeneities in Single Crystals Rotated during Pulling from the Melt

  K. Morizane;A. Witt;H. C. Gatos

  115
  Citations

• Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

  J. Lagowski;H. C. Gatos;C. H. Kang;M. Skowronski

  109
  Citations

• On the relationship of semiconductor compound properties and the average heats of atomisation

  V. Sadagopan;H.C. Gatos

  102
  Citations

• Determination of surface state parameters from surface photovoltage transients: CdS

  Jacek Łagowski;Chester L. Balestra;Harry C. Gatos

  99
  Citations

• The electrochemistry of semiconductors: P. J. Holmes (Editor): Academic Press, London and New York, 1962. 396 pp., $12.00

  Harry C. Gatos

  10
  Citations