Harry C. Gatos

Harry C. Gatos publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Harry C. Gatos sits on this spectrum.

Harry C. Gatos D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Harry C. Gatos sits on this spectrum.

Research.com Recognitions

• 1968 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Best Publications

• Electron mobility in modulation-doped heterostructures

  W. Walukiewicz;H. E. Ruda;J. Lagowski;H. C. Gatos

  586
  Citations

• Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio

  W. Walukiewicz;J. Lagowski;L. Jastrzebski;P. Rava

  440
  Citations

• Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

  J. Lagowski;H. C. Gatos;J. M. Parsey;K. Wada

  395
  Citations

• Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds

  Harry C. Gatos;Mary C. Lavine

  318
  Citations

• Crystallographic Polarity in the II‐VI Compounds

  E. P. Warekois;M. C. Lavine;A. N. Mariano;H. C. Gatos

  310
  Citations

• Surface photovoltage spectroscopy - A new approach to the study of high-gap semiconductor surfaces.

  Harry C. Gatos;Jacek Lagowski

  273
  Citations

• Intracenter transitions in the dominant deep level (EL2) in GaAs

  M. Kaminska;M. Skowronski;J. Lagowski;J. M. Parsey

  264
  Citations

• The Surface Chemistry of Metals and Semiconductors

  Harry C. Gatos;J. W. Faust;W. J. La Fleur;M. Metzger

  237
  Citations

• Quantitative study of the charge transfer in chemisorption; oxygen chemisorption on ZnO

  J. Lagowski;E. S. Sproles;H. C. Gatos

  180
  Citations

• Crystal Growth and Segregation under Zero Gravity: Ge

  A. F. Witt;H. C. Gatos;M. Lichtensteiger;C. J. Herman

  172
  Citations

• Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect

  J. Lagowski;D. G. Lin;T.‐P. Chen;M. Skowronski

  147
  Citations

• Passivation of the dominant deep level (EL2) in GaAs by hydrogen

  J. Lagowski;M. Kaminska;J. M. Parsey;H. C. Gatos

  140
  Citations

• Identification of oxygen‐related midgap level in GaAs

  J. Lagowski;D. G. Lin;T. Aoyama;H. C. Gatos

  138
  Citations

• Electronic characteristics of “real” CdS surfaces

  J. Łagowski;C.L. Balestra;H.C. Gatos

  133
  Citations

• Surface stress and the normal mode of vibration of thin crystals :GaAs

  J. Lagowski;H. C. Gatos;E. S. Sproles

  128
  Citations

• Minority‐carrier mobility in p‐type GaAs

  W. Walukiewicz;J. Lagowski;L. Jastrzebski;H. C. Gatos

  119
  Citations

• Electron mobility in n‐type GaAs at 77 K: Determination of the compensation ratio

  W. Walukiewicz;J. Lagowski;H. C. Gatos

  115
  Citations

• Impurity Distribution in Single Crystals III . Impurity Heterogeneities in Single Crystals Rotated during Pulling from the Melt

  K. Morizane;A. Witt;H. C. Gatos

  115
  Citations

• Inverted thermal conversion—GaAs, a new alternative material for integrated circuits

  J. Lagowski;H. C. Gatos;C. H. Kang;M. Skowronski

  109
  Citations

• On the relationship of semiconductor compound properties and the average heats of atomisation

  V. Sadagopan;H.C. Gatos

  102
  Citations

• Determination of surface state parameters from surface photovoltage transients: CdS

  Jacek Łagowski;Chester L. Balestra;Harry C. Gatos

  99
  Citations

• The electrochemistry of semiconductors: P. J. Holmes (Editor): Academic Press, London and New York, 1962. 396 pp., $12.00

  Harry C. Gatos

  10
  Citations