2026 Jun-ichi Nishizawa: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	43	12316	773	440	7267

Discipline name

D-Index

World Ranking

National Ranking

Publications

Citations

Materials Science

12316

773

440

7267

Research.com Recognitions

2018 - Polish Academy of Science
2000 - IEEE Edison Medal For contributions to materials science and technology, and the invention of the static induction transistor.

Overview

Jun-ichi Nishizawa was affiliated with Tohoku University in Japan. Their research output primarily spanned the field of Engineering, with a particular focus on Electrical and Electronic Engineering, Biomedical Engineering, Computer Vision and Pattern Recognition, Radiation, and Radiology, Nuclear Medicine and Imaging.

The scientist contributed to research topics including:

Advanced Semiconductor Detectors and Materials
Advanced X-ray and CT Imaging
Augmented Reality Applications
Radiation Detection and Scintillator Technologies
Anatomy and Medical Technology
Surgical Simulation and Training
Semiconductor Quantum Structures and Devices

Frequent coauthors in their publications included Katsuyuki Takagi, Hiroki Kase, Kento Tabata, and Toru Aoki.

Nishizawa's research appeared in several publication venues. The most frequent were:

Proceedings of the International Display Workshops
Sensors and Materials
Colloids and Surfaces A Physicochemical and Engineering Aspects
Journal of Instrumentation
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Some of Nishizawa's recent papers included:

"Characteristic evaluation of the pseudo-polymorphism of amorphous atorvastatin calcium hydrates by terahertz spectroscopy," 2021, Colloids and Surfaces A Physicochemical and Engineering Aspects
"Comparative study of In/CdTe/Au Schottky- and p-n junction-diode detectors formed by backside laser irradiation doping," 2020, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
"Spatial awareness application using mixed reality for 3D X-ray CT examination," 2023, Journal of Instrumentation
"Effects of Heating on Electrical and Spectral Properties of In/CdTe/Au X- and γ-ray Detectors with a Schottky Barrier or Laser-induced p-n Junction," 2020, Sensors and Materials
"Resistance to Pressure in Laser-doped p-n and Schottky-type Barrier Junctions," 2024, Sensors and Materials

Jun-ichi Nishizawa was awarded the IEEE Edison Medal in 2000 for contributions to materials science and technology and the invention of the static induction transistor. Additionally, the Polish Academy of Science honored Nishizawa in 2018.

Best Publications

Molecular Layer Epitaxy

Jun‐ichi Nishizawa;Hitoshi Abe;Toru Kurabayashi

443
Citations
Tunable terahertz wave generation in the 3- to 7-THz region from GaP

Tadao Tanabe;K. Suto;J. Nishizawa;K. Saito

297
Citations
On the reaction mechanism of GaAs MOCVD

Jun-ichi Nishizawa;Toru Kurabayashi

256
Citations
On the Reaction Mechanism of GaAs MOCVD

J. Nishizawa;T. Kurabayashi

252
Citations
Semiconductor Raman laser

J. Nishizawa;K. Suto

188
Citations
Blue light emission from ZnSe p‐n junctions

Jun‐ichi Nishizawa;Kazuomi Itoh;Yasuo Okuno;Fumitoshi Sakurai

156
Citations
DISPOSITIF POUR FORMER UN CRISTAL DE SEMI-CONDUCTEUR

Nishizawa Junichi;Abe Hitoshi;Suzuki Soubei

149
Citations
THz imaging of nucleobases and cancerous tissue using a GaP THz-wave generator

Jun Ichi Nishizawa;Tetsuo Sasaki;Ken Suto;Tetsuya Yamada

146
Citations
Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure

J. Nishizawa;Y. Okuno;H. Tadano

131
Citations
Mechanism of surface reaction in GaAs layer growth

J. Nishizawa;T. Kurabayashi;H. Abe;A. Nozoe

124
Citations
Short channel MOSFET with buried anti-punch through region

Jun-ichi Nishizawa;Tadahiro Ohmi

123
Citations
Molecular layer epitaxy of silicon

Jun-ichi Nishizawa;Kenji Aoki;Sohbe Suzuki;Kazuhiko Kikuchi

120
Citations
Photostimulated molecular layer epitaxy

Jun‐ichi Nishizawa;Hitoshi Abe;Toru Kurabayashi;Naoki Sakurai

117
Citations
Nonstoichiometry of Te-Doped GaAs

Jun-ichi Nishizawa;Hideo Otsuka;Shigenobu Yamakoshi;Katsuhiko Ishida

115
Citations
Silicon molecular layer epitaxy

Jun‐ichi Nishizawa;Kenji Aoki;Sohbe Suzuki;Kazuhiko Kikuchi

113
Citations
High-frequency high-power static induction transistor

J. Nishizawa;K. Yamamoto

109
Citations
Ferroelectric PVDF cladding terahertz waveguide

T. Hidaka;H. Minamide;H. Ito;J. Nishizawa

107
Citations
Low-frequency vibrational modes of riboflavin and related compounds

Masae Takahashi;Yoichi Ishikawa;Jun Ichi Nishizawa;Hiromasa Ito

101
Citations
Frequency-tunable terahertz wave generation via excitation of phonon-polaritons in GaP

Tadao Tanabe;Ken Suto;Jun Ichi Nishizawa;Kyosuke Saito

101
Citations
Analysis of static characteristics of a bipolar-mode SIT (BSIT)

J. Nishizawa;T. Ohmi;Hsiao-Liang Chen

100
Citations
Gas-phase nucleation during the thermal decomposition of silane in hydrogen

T.U.M.S. Murthy;N. Miyamoto;M. Shimbo;J. Nishizawa

100
Citations
Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure

J. Nishizawa;Y. Okuno

96
Citations
Epitaxial Growth with Light Irradiation

Masashi Kumagawa;Hideo Sunami;Takeshi Terasaki;Jun-ichi Nishizawa

90
Citations
Characteristics of static induction transistors: Effects of series resistance

Y. Mochida;J. Nishizawa;T. Ohmi;R.K. Gupta

86
Citations
Minority‐carrier lifetime measurements of efficient GaAlAs p‐n heterojunctions

J. Nishizawa;K. Suto;T. Teshima

82
Citations