World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
37
Citations
6475
World Ranking
8318
National Ranking
2302

George I. Haddad publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where George I. Haddad sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 358 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

George I. Haddad D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where George I. Haddad sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 37 D-Index — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 1994 - Member of the National Academy of Engineering For contributions to microwave electronics and for leadership in electrical engineering research and education.
  • 1972 - IEEE Fellow For contributions to solid-state and quantum electronic devices and engineering education.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Electron

George I. Haddad mainly focuses on Electrical engineering, Electronic engineering, Diode, Optoelectronics and Quantum tunnelling. He frequently studies issues relating to Semiconductor device and Electrical engineering. The study incorporates disciplines such as Transistor, Electronic circuit, Input offset voltage and Electronics in addition to Electronic engineering.

His studies deal with areas such as Extremely high frequency, Mathematical model, Statistical physics and Gallium arsenide as well as Diode. His Optoelectronics research incorporates themes from Phase noise, Terminal, RF power amplifier and Power dividers and directional couplers. He combines subjects such as Phonon and Boundary value problem with his study of Quantum tunnelling.

His most cited work include:

  • Digital circuit applications of resonant tunneling devices (435 citations)
  • Resonant tunneling diodes: models and properties (277 citations)
  • Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition (151 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Diode, Electronic engineering, Electrical engineering and Heterojunction bipolar transistor. George I. Haddad interconnects Transistor and RF power amplifier in the investigation of issues within Optoelectronics. George I. Haddad has researched Diode in several fields, including Extremely high frequency and Microwave.

The various areas that he examines in his Electronic engineering study include Electrical impedance, Equivalent circuit, Computational physics and Amplifier. His research investigates the connection between Heterojunction bipolar transistor and topics such as Transimpedance amplifier that intersect with problems in Photodiode. His research integrates issues of Quantum well, Resonant-tunneling diode and Negative resistance in his study of Quantum tunnelling.

He most often published in these fields:

  • Optoelectronics (54.51%)
  • Diode (28.57%)
  • Electronic engineering (21.43%)

What were the highlights of his more recent work (between 1997-2017)?

  • Optoelectronics (54.51%)
  • Electronic engineering (21.43%)
  • Electrical engineering (18.42%)

In recent papers he was focusing on the following fields of study:

George I. Haddad focuses on Optoelectronics, Electronic engineering, Electrical engineering, RF power amplifier and Terahertz radiation. His work in Diode, Heterojunction and Quantum tunnelling is related to Optoelectronics. His Diode research is multidisciplinary, incorporating elements of Power, Lithography, Ultra high frequency, Transistor and Millimeter.

His work is dedicated to discovering how Electronic engineering, Amplifier are connected with DC bias and other disciplines. His RF power amplifier research incorporates themes from Phase noise, Radio frequency and Oscillation. His Terahertz radiation study also includes fields such as

  • Electron that connect with fields like Wave function,
  • Electricity generation which connect with Power level, Band gap and Semiconductor device.

Between 1997 and 2017, his most popular works were:

  • Digital circuit applications of resonant tunneling devices (435 citations)
  • Resonant tunneling diodes: models and properties (277 citations)
  • Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above (100 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Electron

His primary areas of study are Electrical engineering, Electronic circuit, Electronic engineering, Optoelectronics and Diode. George I. Haddad combines subjects such as Optical communication and Reliability with his study of Electrical engineering. George I. Haddad interconnects Linear differential equation, Equivalent circuit, Narrowband and Control theory in the investigation of issues within Electronic circuit.

His Electronic engineering research incorporates elements of Semiconductor device and Amplifier. The Optoelectronics study combines topics in areas such as Phase noise, Radio frequency, Ultra high frequency, Transistor and Microwave. His Diode research includes themes of Quantum tunnelling, Resonant-tunneling diode, Nanoelectronics and Lithography.

Best Publications

  • Digital circuit applications of resonant tunneling devices

    P. Mazumder;S. Kulkarni;M. Bhattacharya;Jian Ping Sun

  • Resonant tunneling diodes: models and properties

    Jian Ping Sun;G.I. Haddad;P. Mazumder;J.N. Schulman

  • Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition

    Kyounghoon Yang;Jack Roy East;George I. Haddad

  • Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above

    H. Eisele;A. Rydberg;G.I. Haddad

  • Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates

    J.J. Barnes;R.J. Lomax;G.I. Haddad

  • Characteristics of Coupled Microstrip Transmission Lines-I: Coupled-Mode Formulation of Inhomogeneous Lines

    M.K. Krage;G.I. Haddad

  • Compact multiple-valued multiplexers using negative differential resistance devices

    H.L. Chan;S. Mohan;P. Mazumder;G.I. Haddad

  • Two-terminal millimeter-wave sources

    H. Eisele;G.I. Haddad

  • Digital logic design using negative differential resistance diodes and field-effect transistors

    Shriram Kulkarni;Pinaki Mazumder;George I. Haddad

  • Power and stability limitations of resonant tunneling diodes

    C. Kidner;I. Mehdi;J.R. East;G.I. Haddad

  • Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems

    SeGi Yu;K. W. Kim;Michael A. Stroscio;G. J. Iafrate

  • Design, modeling, and characterization of monolithically integrated InP-based (1.55 /spl mu/m) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers

    Kyounghoon Yang;A.L. Gutierrez-Aitken;Xiangkun Zhang;G.I. Haddad

  • Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation

    R. K. Mains;G. I. Haddad

  • High-efficiency class-A power amplifiers with a dual-bias-control scheme

    Kyounghoon Yang;G.I. Haddad;J.R. East

  • Simulation of GaAs IMPATT diodes including energy and velocity transport equations

    R.K. Mains;G.I. Haddad;P.A. Blakey

  • Frequency-Dependent Characteristics of MicrostripTransmission Lines

    M.K. Krage;G.I. Haddad

  • Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios

    R. K. Mains;G. I. Haddad

  • Nonlinear properties of IMPATT devices

    W.E. Schroeder;G.I. Haddad

  • Tunneling devices and applications in high functionality/speed digital circuits

    G.I. Haddad;P. Mazumder

  • Basic Principles and Properties of Avalanche Transit-Time Devices

    G.I. Haddad;P.T. Greiling;W.E. Schroeder

Frequent Co-Authors

P. K. Bhattacharya
P. K. Bhattacharya University of Michigan–Ann Arbor
Imran Mehdi
Imran Mehdi Jet Propulsion Lab
Pinaki Mazumder
Pinaki Mazumder University of Michigan–Ann Arbor
Tatsuo Itoh
Tatsuo Itoh University of California, Los Angeles
Theodore B. Norris
Theodore B. Norris University of Michigan–Ann Arbor
Michael A. Stroscio
Michael A. Stroscio University of Illinois at Chicago
Pallab Bhattacharya
Pallab Bhattacharya University of Michigan–Ann Arbor
Vladimir Mitin
Vladimir Mitin University at Buffalo, State University of New York
Youngwoo Kwon
Youngwoo Kwon Seoul National University
Dimitris Pavlidis
Dimitris Pavlidis Boston University

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