World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
37
Citations
6475
World Ranking
8316
National Ranking
2301

Research.com Recognitions

  • 1994 - Member of the National Academy of Engineering For contributions to microwave electronics and for leadership in electrical engineering research and education.
  • 1972 - IEEE Fellow For contributions to solid-state and quantum electronic devices and engineering education.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Electron

George I. Haddad mainly focuses on Electrical engineering, Electronic engineering, Diode, Optoelectronics and Quantum tunnelling. He frequently studies issues relating to Semiconductor device and Electrical engineering. The study incorporates disciplines such as Transistor, Electronic circuit, Input offset voltage and Electronics in addition to Electronic engineering.

His studies deal with areas such as Extremely high frequency, Mathematical model, Statistical physics and Gallium arsenide as well as Diode. His Optoelectronics research incorporates themes from Phase noise, Terminal, RF power amplifier and Power dividers and directional couplers. He combines subjects such as Phonon and Boundary value problem with his study of Quantum tunnelling.

His most cited work include:

  • Digital circuit applications of resonant tunneling devices (435 citations)
  • Resonant tunneling diodes: models and properties (277 citations)
  • Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition (151 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Diode, Electronic engineering, Electrical engineering and Heterojunction bipolar transistor. George I. Haddad interconnects Transistor and RF power amplifier in the investigation of issues within Optoelectronics. George I. Haddad has researched Diode in several fields, including Extremely high frequency and Microwave.

The various areas that he examines in his Electronic engineering study include Electrical impedance, Equivalent circuit, Computational physics and Amplifier. His research investigates the connection between Heterojunction bipolar transistor and topics such as Transimpedance amplifier that intersect with problems in Photodiode. His research integrates issues of Quantum well, Resonant-tunneling diode and Negative resistance in his study of Quantum tunnelling.

He most often published in these fields:

  • Optoelectronics (54.51%)
  • Diode (28.57%)
  • Electronic engineering (21.43%)

What were the highlights of his more recent work (between 1997-2017)?

  • Optoelectronics (54.51%)
  • Electronic engineering (21.43%)
  • Electrical engineering (18.42%)

In recent papers he was focusing on the following fields of study:

George I. Haddad focuses on Optoelectronics, Electronic engineering, Electrical engineering, RF power amplifier and Terahertz radiation. His work in Diode, Heterojunction and Quantum tunnelling is related to Optoelectronics. His Diode research is multidisciplinary, incorporating elements of Power, Lithography, Ultra high frequency, Transistor and Millimeter.

His work is dedicated to discovering how Electronic engineering, Amplifier are connected with DC bias and other disciplines. His RF power amplifier research incorporates themes from Phase noise, Radio frequency and Oscillation. His Terahertz radiation study also includes fields such as

  • Electron that connect with fields like Wave function,
  • Electricity generation which connect with Power level, Band gap and Semiconductor device.

Between 1997 and 2017, his most popular works were:

  • Digital circuit applications of resonant tunneling devices (435 citations)
  • Resonant tunneling diodes: models and properties (277 citations)
  • Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above (100 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Electron

His primary areas of study are Electrical engineering, Electronic circuit, Electronic engineering, Optoelectronics and Diode. George I. Haddad combines subjects such as Optical communication and Reliability with his study of Electrical engineering. George I. Haddad interconnects Linear differential equation, Equivalent circuit, Narrowband and Control theory in the investigation of issues within Electronic circuit.

His Electronic engineering research incorporates elements of Semiconductor device and Amplifier. The Optoelectronics study combines topics in areas such as Phase noise, Radio frequency, Ultra high frequency, Transistor and Microwave. His Diode research includes themes of Quantum tunnelling, Resonant-tunneling diode, Nanoelectronics and Lithography.

Best Publications

  • Digital circuit applications of resonant tunneling devices

    P. Mazumder;S. Kulkarni;M. Bhattacharya;Jian Ping Sun

  • Resonant tunneling diodes: models and properties

    Jian Ping Sun;G.I. Haddad;P. Mazumder;J.N. Schulman

  • Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition

    Kyounghoon Yang;Jack Roy East;George I. Haddad

  • Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above

    H. Eisele;A. Rydberg;G.I. Haddad

  • Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates

    J.J. Barnes;R.J. Lomax;G.I. Haddad

  • Characteristics of Coupled Microstrip Transmission Lines-I: Coupled-Mode Formulation of Inhomogeneous Lines

    M.K. Krage;G.I. Haddad

  • Compact multiple-valued multiplexers using negative differential resistance devices

    H.L. Chan;S. Mohan;P. Mazumder;G.I. Haddad

  • Two-terminal millimeter-wave sources

    H. Eisele;G.I. Haddad

  • Digital logic design using negative differential resistance diodes and field-effect transistors

    Shriram Kulkarni;Pinaki Mazumder;George I. Haddad

  • Power and stability limitations of resonant tunneling diodes

    C. Kidner;I. Mehdi;J.R. East;G.I. Haddad

  • Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems

    SeGi Yu;K. W. Kim;Michael A. Stroscio;G. J. Iafrate

  • Design, modeling, and characterization of monolithically integrated InP-based (1.55 /spl mu/m) high-speed (24 Gb/s) p-i-n/HBT front-end photoreceivers

    Kyounghoon Yang;A.L. Gutierrez-Aitken;Xiangkun Zhang;G.I. Haddad

  • Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation

    R. K. Mains;G. I. Haddad

  • High-efficiency class-A power amplifiers with a dual-bias-control scheme

    Kyounghoon Yang;G.I. Haddad;J.R. East

  • Simulation of GaAs IMPATT diodes including energy and velocity transport equations

    R.K. Mains;G.I. Haddad;P.A. Blakey

  • Frequency-Dependent Characteristics of MicrostripTransmission Lines

    M.K. Krage;G.I. Haddad

  • Wigner function modeling of resonant tunneling diodes with high peak‐to‐valley ratios

    R. K. Mains;G. I. Haddad

  • Nonlinear properties of IMPATT devices

    W.E. Schroeder;G.I. Haddad

  • Tunneling devices and applications in high functionality/speed digital circuits

    G.I. Haddad;P. Mazumder

  • Basic Principles and Properties of Avalanche Transit-Time Devices

    G.I. Haddad;P.T. Greiling;W.E. Schroeder

Frequent Co-Authors

P. K. Bhattacharya
P. K. Bhattacharya University of Michigan–Ann Arbor
Imran Mehdi
Imran Mehdi Jet Propulsion Lab
Pinaki Mazumder
Pinaki Mazumder University of Michigan–Ann Arbor
Tatsuo Itoh
Tatsuo Itoh University of California, Los Angeles
Theodore B. Norris
Theodore B. Norris University of Michigan–Ann Arbor
Michael A. Stroscio
Michael A. Stroscio University of Illinois at Chicago
Pallab Bhattacharya
Pallab Bhattacharya University of Michigan–Ann Arbor
Vladimir Mitin
Vladimir Mitin University at Buffalo, State University of New York
Youngwoo Kwon
Youngwoo Kwon Seoul National University
Dimitris Pavlidis
Dimitris Pavlidis Boston University

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