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Dimitris Pavlidis

Dimitris Pavlidis

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
5555
World Ranking
5531
National Ranking
1896

Overview

Dimitris Pavlidis is a researcher affiliated with Boston University in the United States. Their work spans multiple disciplines, primarily focusing on Medicine and Engineering, bridging aspects of biological sciences and material studies.

Their research contributions include two recent papers: "Effect of Donor Age on Endocrine Function of and Immune Response to Ovarian Grafts" published in 2024 in the International Journal of Molecular Sciences, and "Field Emission Properties of Top-Down GaN Nanowires Characterized in Vacuum by a Nanometer-Resolution Piezoelectric Probing System," also published in 2024 in the Journal of Electronic Materials.

These publications reflect a diverse range of interests. The first paper touches on reproductive biology, specifically ovarian function and immune responses related to grafts, intersecting with endocrinology and immunology. The second paper explores properties of gallium nitride (GaN) nanowires, which relates to condensed matter physics and material engineering with applications in semiconductor devices.

Pavlidis's main fields of study include:

  • Medicine
  • Engineering

Within these fields, their subfields of study cover:

  • Public Health, Environmental and Occupational Health
  • Immunology
  • Reproductive Medicine
  • Condensed Matter Physics
  • Biomedical Engineering

Their work focuses on specific research topics such as:

  • Reproductive Biology and Fertility
  • Reproductive System and Pregnancy
  • Ovarian function and disorders
  • GaN-based semiconductor devices and materials
  • Nanowire Synthesis and Applications
  • Metal and Thin Film Mechanics

Pavlidis frequently publishes in venues including:

  • International Journal of Molecular Sciences
  • Journal of Electronic Materials

Collaboration appears to be an important aspect of their work, with frequent co-authors including Monica A. Wall, Mayara Garcia de Mattos Barbosa, Natalie Hanby, Michelle M. Cai, and Margaret A. Brunette.

Best Publications

  • Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data

    D.R. Pehlke;D. Pavlidis

  • Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

    Tamotsu Hashizume;Tamotsu Hashizume;Egor Alekseev;Dimitris Pavlidis;Karim S. Boutros

  • Large-signal microwave performance of GaN-based NDR diode oscillators

    Egor Alekseev;Dimitris Pavlidis

  • Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

    J. Cao;D. Pavlidis;Y. Park;J. Singh

  • Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures

    Y.-J. Chan;D. Pavlidis;M. Razeghi;F. Omnes

  • Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low-frequency noise and transconductance dispersion characterizations

    Yi-Jen Chan;D. Pavlidis

  • Low interface state density AlN/GaN MISFETs

    E. Alekseev;A. Eisenbach;D. Pavlidis

  • DC and high-frequency characteristics of GaN-based IMPATTs

    A.K. Panda;D. Pavlidis;E. Alekseev

  • Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs

    C. H. Hong;D. Pavlidis;S. W. Brown;S. C. Rand

  • Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

    W.‐P. Hong;G. I. Ng;P. K. Bhattacharya;D. Pavlidis

  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching

    I. M. Tiginyanu;V. V. Ursaki;V. V. Zalamai;S. Langa

  • Fröhlich modes in GaN columnar nanostructures

    I. M. Tiginyanu;A. Sarua;G. Irmer;J. Monecke

  • High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

    S.M. Hubbard;G. Zhao;D. Pavlidis;D. Pavlidis;W. Sutton

  • Investigation of the impact of Al mole-fraction on the consequences of RF stress on Al/sub x/Ga/sub 1-x/N/GaN MODFETs

    P. Valizadeh;D. Pavlidis

  • Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors

    A. Samelis;D. Pavlidis

  • Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs

    G.-I. Ng;D. Pavlidis;M. Jaffe;J. Singh

  • Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation

    P. Valizadeh;D. Pavlidis

  • A D-band monolithic fundamental oscillator using InP-based HEMT's

    Y. Kwon;D. Pavlidis;T.L. Brock;D.C. Streit

  • Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation

    V. V. Ursaki;I. M. Tiginyanu;P. C. Ricci;A. Anedda

  • Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates

    J. Cao;D. Pavlidis;A. Eisenbach;A. Philippe

  • A review of the growth, doping, and applications of Beta-Ga2O3 thin films

    Manijeh Razeghi;Ji Hyeon Park;Ryan P McClintock;Dimitris Pavlidis

Frequent Co-Authors

Geok Ing Ng
Geok Ing Ng Nanyang Technological University
Youngwoo Kwon
Youngwoo Kwon Seoul National University
Ion Tiginyanu
Ion Tiginyanu Technical University of Moldova
Manijeh Razeghi
Manijeh Razeghi Northwestern University
Jasprit Singh
Jasprit Singh University of Michigan–Ann Arbor
Roy Clarke
Roy Clarke University of Michigan–Ann Arbor
Lester F. Eastman
Lester F. Eastman Cornell University
Joan M. Redwing
Joan M. Redwing Pennsylvania State University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Hongxing Jiang
Hongxing Jiang Texas Tech University

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