Jasprit Singh

Overview

Best Publications

• Electronic and Optoelectronic Properties of Semiconductor Structures

  Jasprit Singh

  355
  Citations

• Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

  Yifei Zhang;Jasprit Singh

  261
  Citations

• Role of interface roughness and alloy disorder in photoluminescence in quantum‐well structures

  Jasprit Singh;K. K. Bajaj

  250
  Citations

• Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

  P. Bhattacharya;S. Ghosh;S. Pradhan;J. Singh

  227
  Citations

• Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

  M. Zhang;P. Bhattacharya;J. Singh;J. Hinckley

  206
  Citations

• Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors

  B. Kochman;A.D. Stiff-Roberts;S. Chakrabarti;J.D. Phillips

  194
  Citations

• Tunneling injection lasers: a new class of lasers with reduced hot carrier effects

  P. Bhattacharya;J. Singh;H. Yoon;Xiangkun Zhang

  159
  Citations

• Self-assembled semiconductor structures: electronic and optoelectronic properties

  Hongtao Jiang;J. Singh

  148
  Citations

• In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties

  P. Bhattacharya;K.K. Kamath;J. Singh;D. Klotzkin

  146
  Citations

• Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

  Yuh-Renn Wu;Yih-Yin Lin;Hung-Hsun Huang;Jasprit Singh

  136
  Citations

• Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

  Yifei Zhang;I. P. Smorchkova;C. R. Elsass;Stacia Keller

  134
  Citations

• SMALL-SIGNAL MODULATION AND DIFFERENTIAL GAIN OF SINGLE-MODE SELF-ORGANIZED IN0.4GA0.6AS/GAAS QUANTUM DOT LASERS

  K. Kamath;J. Phillips;H. Jiang;J. Singh

  126
  Citations

• Theoretical studies of the effect of strain on the performance of strained quantum well lasers based on GaAs and InP technology

  J.P. Loehr;J. Singh

  123
  Citations

• Properties of a tunneling injection quantum-well laser: Recipe for 'cold' device with a large modulation bandwidth

  H.C. Sun;L. Davis;S. Sethi;J. Singh

  105
  Citations

• p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy

  J. M. Arias;S. H. Shin;D. E. Cooper;M. Zandian

  99
  Citations

• Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

  J. Urayama;T. B. Norris;H. Jiang;J. Singh

  95
  Citations

• Band structure and charge control studies of n‐ and p‐type pseudomorphic modulation‐doped field‐effect transistors

  Mark Jaffe;Jasprit Singh

  93
  Citations

• Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

  Won Pyo Hong;Pallab K. Bhattacharya;Jasprit Singh

  91
  Citations

• HgCdTe infrared diode lasers grown by MBE

  J M Arias;M Zandian;R Zucca;J Singh

  89
  Citations

• Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures

  K. Kamath;N. Chervela;K. K. Linder;T. Sosnowski

  84
  Citations