The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Anupam Madhukar sits on this spectrum.
This scientist: 416 publications — 79th percentile
79% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Anupam Madhukar sits on this spectrum.
This scientist: 67 D-Index — 61st percentile
61% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Anupam Madhukar is a researcher affiliated with the University of Southern California in the United States. Their academic work is marked by notable recognition within the scientific community, including honors such as becoming a Fellow of the American Physical Society (APS) in 2003. This fellowship was awarded with a citation highlighting contributions to the understanding and development of semiconductor epitaxy and stress-driven self-organized epitaxial quantum dots. Earlier in their career, Madhukar was named a Fellow of the Alfred P. Sloan Foundation in 1977.
The focal points of Madhukar's scholarly contributions involve semiconductor materials and quantum dot structures, specifically addressing epitaxial growth processes and stress-driven phenomena at the nanoscale. These areas of study are central to advances in semiconductor physics and materials science, with implications for both fundamental research and potential technological applications.
Their profile does not list specific publications or co-authors, nor does it provide detailed information on frequent publication venues or book publications. Therefore, the overview centers on Madhukar's recognized fields of study and awarded contributions rather than an extensive catalog of published works.
Qianghua Xie;Anupam Madhukar;Ping Chen;Nobuhiko P. Kobayashi
S. Guha;A. Madhukar;K. C. Rajkumar
F. J. Grunthaner;P. J. Grunthaner;R. P. Vasquez;B. F. Lewis
F. J. Grunthaner;P. J. Grunthaner;R. P. Vasquez;B. F. Lewis
S. Das Sarma;A. Madhukar
A. Madhukar;Q. Xie;P. Chen;A. Konkar
R. Heitz;R. Heitz;I. Mukhametzhanov;O. Stier;A. Madhukar
R. Heitz;R. Heitz;A. Kalburge;Q. Xie;M. Grundmann
N. P. Kobayashi;T. R. Ramachandran;P. Chen;A. Madhukar
Eui-Tae Kim;Anupam Madhukar;Zhengmao Ye;Joe C. Campbell
Qianghua Xie;P. Chen;A. Madhukar
R. Heitz;T. R. Ramachandran;A. Kalburge;Q. Xie
C. Baur;A. Bugacov;Bruce E. Koel;A. Madhukar
I. Mukhametzhanov;R. Heitz;J. Zeng;P. Chen
Anupam Madhukar;Subhash V. Ghaisas
Zhonghui Chen;O. Baklenov;E. T. Kim;I. Mukhametzhanov
A. Madhukar
S. Das Sarma;A. Madhukar
I. Mukhametzhanov;Z. Wei;R. Heitz;A. Madhukar
R. Heitz;I. Mukhametzhanov;A. Madhukar;A. Hoffmann
T. R. Ramachandran;R. Heitz;P. Chen;A. Madhukar
J.C. Campbell;A. Madhukar
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