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Materials Science

D-Index
67
Citations
16304
World Ranking
5109
National Ranking
1343

Research.com Recognitions

  • 2003 - Fellow of American Physical Society (APS) Citation For contributions to the understanding and development of semiconductor epitaxy and stressdriven selforganized epitaxial quantum dots
  • 1977 - Fellow of Alfred P. Sloan Foundation

Overview

Anupam Madhukar is a researcher affiliated with the University of Southern California in the United States. Their academic work is marked by notable recognition within the scientific community, including honors such as becoming a Fellow of the American Physical Society (APS) in 2003. This fellowship was awarded with a citation highlighting contributions to the understanding and development of semiconductor epitaxy and stress-driven self-organized epitaxial quantum dots. Earlier in their career, Madhukar was named a Fellow of the Alfred P. Sloan Foundation in 1977.

The focal points of Madhukar's scholarly contributions involve semiconductor materials and quantum dot structures, specifically addressing epitaxial growth processes and stress-driven phenomena at the nanoscale. These areas of study are central to advances in semiconductor physics and materials science, with implications for both fundamental research and potential technological applications.

Their profile does not list specific publications or co-authors, nor does it provide detailed information on frequent publication venues or book publications. Therefore, the overview centers on Madhukar's recognized fields of study and awarded contributions rather than an extensive catalog of published works.

Best Publications

  • Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

    Qianghua Xie;Anupam Madhukar;Ping Chen;Nobuhiko P. Kobayashi

  • Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

    S. Guha;A. Madhukar;K. C. Rajkumar

  • High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface

    F. J. Grunthaner;P. J. Grunthaner;R. P. Vasquez;B. F. Lewis

  • Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

    F. J. Grunthaner;P. J. Grunthaner;R. P. Vasquez;B. F. Lewis

  • Collective modes of spatially separated, two-component, two-dimensional plasma in solids

    S. Das Sarma;A. Madhukar

  • Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)

    A. Madhukar;Q. Xie;P. Chen;A. Konkar

  • Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots

    R. Heitz;R. Heitz;I. Mukhametzhanov;O. Stier;A. Madhukar

  • Excited states and energy relaxation in stacked InAs/GaAs quantum dots

    R. Heitz;R. Heitz;A. Kalburge;Q. Xie;M. Grundmann

  • In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)

    N. P. Kobayashi;T. R. Ramachandran;P. Chen;A. Madhukar

  • High detectivity InAs quantum dot infrared photodetectors

    Eui-Tae Kim;Anupam Madhukar;Zhengmao Ye;Joe C. Campbell

  • InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth

    Qianghua Xie;P. Chen;A. Madhukar

  • Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs

    R. Heitz;T. R. Ramachandran;A. Kalburge;Q. Xie

  • Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring

    C. Baur;A. Bugacov;Bruce E. Koel;A. Madhukar

  • Independent manipulation of density and size of stress-driven self-assembled quantum dots

    I. Mukhametzhanov;R. Heitz;J. Zeng;P. Chen

  • The nature of molecular beam epitaxial growth examined via computer simulations

    Anupam Madhukar;Subhash V. Ghaisas

  • Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

    Zhonghui Chen;O. Baklenov;E. T. Kim;I. Mukhametzhanov

  • Far from equilibrium vapour phase growth of lattice matched III-V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations

    A. Madhukar

  • Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems

    S. Das Sarma;A. Madhukar

  • Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution

    I. Mukhametzhanov;Z. Wei;R. Heitz;A. Madhukar

  • Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

    R. Heitz;I. Mukhametzhanov;A. Madhukar;A. Hoffmann

  • Mass transfer in Stranski–Krastanow growth of InAs on GaAs

    T. R. Ramachandran;R. Heitz;P. Chen;A. Madhukar

  • Quantum-Dot Infrared Photodetectors

    J.C. Campbell;A. Madhukar

Frequent Co-Authors

Joe C. Campbell
Joe C. Campbell University of Virginia
Rajiv K. Kalia
Rajiv K. Kalia University of Southern California
Aiichiro Nakano
Aiichiro Nakano University of Southern California
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Bruce E. Koel
Bruce E. Koel Princeton University
Supratik Guha
Supratik Guha Argonne National Laboratory
Priya Vashishta
Priya Vashishta University of Southern California
Aristides A. G. Requicha
Aristides A. G. Requicha University of Southern California
Baris Fidan
Baris Fidan University of Waterloo
A. Paul Alivisatos
A. Paul Alivisatos University of Chicago

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