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R Richard Nötzel

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 51 2672 2564 444 442 513 10156
Materials Science 56 8253 7980 2395 2387 558 11330

R Richard Nötzel publications per year

The chart shows the history of publications by R Richard Nötzel between 1989 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. R Richard Nötzel published across 33 years, from 1989 to 2021, averaging 17.2 papers a year. Output peaked at 51 publications in 2009. 16 of the 567 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1989 to 2021. Vertical axis: number of publications, 0 to 51. Peak 51 publications in 2009. 1989: 1 publication 1990: 0 publications 1991: 1 publication 1992: 13 publications 1993: 16 publications 1994: 16 publications 1995: 15 publications 1996: 12 publications 1997: 10 publications 1998: 17 publications 1999: 17 publications 2000: 14 publications 2001: 17 publications 2002: 16 publications 2003: 14 publications 2004: 23 publications 2005: 38 publications 2006: 43 publications 2007: 48 publications 2008: 48 publications 2009: 51 publications 2010: 42 publications 2011: 26 publications 2012: 15 publications 2013: 12 publications 2014: 3 publications 2015: 3 publications 2016: 4 publications 2017: 2 publications 2018: 4 publications 2019: 10 publications 2020: 6 publications 2021: 10 publications
1989 2021

567 publications in total across all disciplines

View publications per year as a table
R Richard Nötzel: publications per year, 1989 to 2021
Year Publications
1989 1
1990 0
1991 1
1992 13
1993 16
1994 16
1995 15
1996 12
1997 10
1998 17
1999 17
2000 14
2001 17
2002 16
2003 14
2004 23
2005 38
2006 43
2007 48
2008 48
2009 51
2010 42
2011 26
2012 15
2013 12
2014 3
2015 3
2016 4
2017 2
2018 4
2019 10
2020 6
2021 10
Total 567
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R Richard Nötzel publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where R Richard Nötzel sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 494–513 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 513 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103 513
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

R Richard Nötzel D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where R Richard Nötzel sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 51 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156 51
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Laser
  • Optics

R Richard Nötzel mainly focuses on Optoelectronics, Quantum dot, Epitaxy, Gallium arsenide and Optics. In most of his Optoelectronics studies, his work intersects topics such as Laser. His studies in Quantum dot integrate themes in fields like Molecular beam epitaxy, Quantum, Condensed matter physics and Photoluminescence.

R Richard Nötzel has included themes like Quantum well, Exciton and Superlattice in his Photoluminescence study. His Epitaxy study integrates concerns from other disciplines, such as Surface finish, Lattice, Heterojunction and Microstructure. As a part of the same scientific study, R Richard Nötzel usually deals with the Gallium arsenide, concentrating on Semiconductor quantum dots and frequently concerns with Chemical beam epitaxy.

His most cited work include:

  • Lasing in metallic-coated nanocavities (690 citations)
  • Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides. (485 citations)
  • Self-organized growth of strained InGaAs quantum disks (259 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Quantum dot, Photoluminescence, Optics and Condensed matter physics. The study incorporates disciplines such as Laser and Epitaxy in addition to Optoelectronics. In his research on the topic of Quantum dot, Nanostructure is strongly related with Molecular beam epitaxy.

His research investigates the connection with Photoluminescence and areas like Quantum wire which intersect with concerns in Spectroscopy. Optics is closely attributed to Semiconductor in his research. His studies in Photonic crystal integrate themes in fields like Refractive index and Liquid crystal.

He most often published in these fields:

  • Optoelectronics (68.89%)
  • Quantum dot (49.27%)
  • Photoluminescence (25.89%)

What were the highlights of his more recent work (between 2008-2019)?

  • Optoelectronics (68.89%)
  • Quantum dot (49.27%)
  • Optics (25.89%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Quantum dot, Optics, Wavelength and Photonic crystal. The various areas that R Richard Nötzel examines in his Optoelectronics study include Laser and Epitaxy. His study in Quantum dot is interdisciplinary in nature, drawing from both Molecular beam epitaxy, Photon, Condensed matter physics, Superlattice and Photoluminescence.

His work carried out in the field of Photon brings together such families of science as Telecommunications, Quantum and Absorption. His Photonic crystal study integrates concerns from other disciplines, such as Q factor, Resonator, Refractive index and Liquid crystal. As part of the same scientific family, he usually focuses on Semiconductor, concentrating on Plasmon and intersecting with Spontaneous emission.

Between 2008 and 2019, his most popular works were:

  • Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides. (485 citations)
  • Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling (102 citations)
  • Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling (102 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Optics
  • Laser

His scientific interests lie mostly in Optoelectronics, Quantum dot, Optics, Photonic crystal and Photoluminescence. His research integrates issues of Laser and Epitaxy in his study of Optoelectronics. His Quantum dot research is multidisciplinary, relying on both Wavelength, Molecular beam epitaxy, Condensed matter physics and Photon.

His work on Tunable laser, Optical amplifier and Photonics as part of general Optics study is frequently linked to Quantum amplifier, therefore connecting diverse disciplines of science. His Photonic crystal research includes themes of Fiber optic sensor, Optical fiber, Resonance and Refractive index. His Resonance research focuses on Quantum and how it relates to Spontaneous emission.

Best Publications

  • Lasing in metallic-coated nanocavities

    Martin T. Hill;Yok-Siang Oei;Barry Smalbrugge;Youcai Zhu

  • Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides.

    Martin T. Hill;Milan Marell;Eunice S P Leong;Barry Smalbrugge

  • Self-organized growth of strained InGaAs quantum disks

    Richard Nötzel;Jiro Temmyo;Toshiaki Tamamura

  • Self-organized growth of quantum-dot structures

    Richard Nötzel

  • Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit.

    G Gunther Roelkens;Van D Thourhout;Rgf Roel Baets;R Richard Nötzel

  • Adhesive Bonding of InP ∕ InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene

    G Gunther Roelkens;J Brouckaert;Van D Thourhout;Rgf Roel Baets

  • Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

    Muhammad Danang Birowosuto;Hisashi Sumikura;Shinji Matsuo;Hideaki Taniyama

  • Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy

    A. Richter;G. Behme;M. Süptitz;Ch. Lienau

  • Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

    M. D. Birowosuto;H. Sumikura;S. Matsuo;H. Taniyama

  • Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates

    Richard Nötzel;Zhichuan Niu;Manfred Ramsteiner;Hans-Peter Schönherr

  • Photonic crystal slot nanobeam slow light waveguides for refractive index sensing

    B Bowen Wang;MA Mehmet Dündar;R Richard Nötzel;F Fouad Karouta

  • Topography of high- and low-index GaAs surfaces.

    R. Nötzel;L. Däweritz;K. Ploog

  • Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

    Q Qian Gong;P Peter Offermans;R Richard Nötzel;PM Paul Koenraad

  • Formation of InAs quantum dot arrays on GaAs (100) by self-organized anisotropic strain engineering of a (In,Ga)As superlattice template

    T. Mano;R. Nötzel;G. J. Hamhuis;T. J. Eijkemans

  • Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

    Q Qian Gong;R Richard Nötzel;van Pj René Veldhoven;TJ Tom Eijkemans

  • Lasing of wavelength-tunable (1.55µm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy

    S. Anantathanasarn;R. Nötzel;P. J. van Veldhoven;F. W. M. van Otten

  • Quantum Mechanical Repulsion of Exciton Levels in a Disordered Quantum Well

    Francesca Intonti;Valentina Emiliani;Christoph Lienau;Thomas Elsaesser

  • Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates

    Richard Nötzel;Jiro Temmyo;Hidehiko Kamada;Tomofumi Furuta

  • Atomic force microscopy study of strained InGaAs quantum disks self-organizing on GaAs (n11)B substrates

    Richard Nötzel;Takashi Fukui;Hideki Hasegawa;Jiro Temmyo

  • Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits

    Gunther Roelkens;Joost Brouckaert;Dirk Taillaert;Pieter Dumon

Frequent Co-Authors

MK Meint Smit
MK Meint Smit Eindhoven University of Technology
Martijn J. R. Heck
Martijn J. R. Heck Eindhoven University of Technology
Eajm Erwin Bente
Eajm Erwin Bente Eindhoven University of Technology
Thomas Elsaesser
Thomas Elsaesser Max Planck Society
Xjm Xaveer Leijtens
Xjm Xaveer Leijtens Eindhoven University of Technology
Daan Lenstra
Daan Lenstra Eindhoven University of Technology
Toshiaki Tamamura
Toshiaki Tamamura NTT Electronics
Andrea Fiore
Andrea Fiore Eindhoven University of Technology
MT Martin Hill
MT Martin Hill University of Western Australia
Gunther Roelkens
Gunther Roelkens Ghent University

External Links

Personal website of R Richard Nötzel

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Additionally, competency based programs present a valuable alternative for learners who prefer advancing based on demonstrated skills rather than seat time. This approach often suits hands-on technical fields like engineering, emphasizing practical knowledge and application.

Best Scientists Citing R Richard Nötzel

Andrea Fiore

Andrea Fiore

Eindhoven University of Technology

Publications: 81

MK Meint Smit

MK Meint Smit

Eindhoven University of Technology

Publications: 79

Gunther Roelkens

Gunther Roelkens

Ghent University

Publications: 71

Roel Baets

Roel Baets

Ghent University

Publications: 54

Gregory J. Salamo

Gregory J. Salamo

University of Arkansas at Fayetteville

Publications: 52

Yeshaiahu Fainman

Yeshaiahu Fainman

University of California, San Diego

Publications: 48

Xiang Zhang

Xiang Zhang

University of Hong Kong

Publications: 44

Sven Höfling

Sven Höfling

University of Würzburg

Publications: 41

John E. Bowers

John E. Bowers

University of California, Santa Barbara

Publications: 40

Cun-Zheng Ning

Cun-Zheng Ning

Tsinghua University

Publications: 37

Dries Van Thourhout

Dries Van Thourhout

Ghent University

Publications: 37

Shun Lien Chuang

Shun Lien Chuang

University of Illinois at Urbana-Champaign

Publications: 37

Johann Peter Reithmaier

Johann Peter Reithmaier

University of Kassel

Publications: 36

Dieter Bimberg

Dieter Bimberg

Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)

Publications: 35

MT Martin Hill

MT Martin Hill

University of Western Australia

Publications: 35

Shigehisa Arai

Shigehisa Arai

Tokyo Institute of Technology

Publications: 33

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