2010 - IEEE Fellow For contributions to single-mode semiconductor lasers for optical communications
His primary areas of investigation include Optoelectronics, Laser, Optics, Semiconductor laser theory and Wavelength. His Optoelectronics study integrates concerns from other disciplines, such as Etching and Continuous wave. His studies in Laser integrate themes in fields like Atomic physics and Epitaxy.
Shigehisa Arai has included themes like Heterojunction and Electron-beam lithography in his Optics study. His Semiconductor laser theory research incorporates themes from Substrate, Active layer, Distributed feedback laser and Quantum efficiency. The various areas that Shigehisa Arai examines in his Gallium arsenide study include Quantum well, Charge-carrier density and Wavelength shift.
Shigehisa Arai mainly focuses on Optoelectronics, Optics, Laser, Semiconductor laser theory and Distributed feedback laser. His work on Quantum well expands to the thematically related Optoelectronics. Distributed Bragg reflector, Grating, Distributed Bragg reflector laser, Refractive index and Tunable laser are among the areas of Optics where the researcher is concentrating his efforts.
His research integrates issues of Etching, Quantum wire, Reflector and Electron-beam lithography in his study of Laser. The concepts of his Semiconductor laser theory study are interwoven with issues in Photonics, Photonic integrated circuit, Indium phosphide, Heterojunction and Quantum efficiency. His Distributed feedback laser research is multidisciplinary, relying on both Optical pumping, Biasing, Silicon and Vertical-cavity surface-emitting laser.
Shigehisa Arai mainly investigates Optoelectronics, Laser, Optics, Metamaterial and Silicon on insulator. As part of the same scientific family, Shigehisa Arai usually focuses on Optoelectronics, concentrating on Modulation and intersecting with Quantum dot laser. His research in Laser intersects with topics in Biasing and Reflector.
His Optics study typically links adjacent topics like Substrate. His Metamaterial study also includes fields such as
Shigehisa Arai mainly focuses on Optoelectronics, Optics, Laser, Waveguide and Photonics. The study incorporates disciplines such as Substrate and Modulation in addition to Optoelectronics. His research investigates the connection with Optics and areas like Silicon which intersect with concerns in Amorphous silicon and Depletion region.
His Laser research integrates issues from Biasing and Reflector. His work deals with themes such as Magnet, Magnetization, Optical switch and Current, which intersect with Waveguide. His Photonics research includes elements of Photodetector and Nanotechnology.
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The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption
Alfred R. Adams;Masahiro Asada;Yasuharu Suematsu;Shigehisa Arai.
Japanese Journal of Applied Physics (1980)
The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption
Alfred R. Adams;Masahiro Asada;Yasuharu Suematsu;Shigehisa Arai.
Japanese Journal of Applied Physics (1980)
Dynamic single-mode semiconductor lasers with a distributed reflector
Y. Suematsu;S. Arai;K. Kishino.
Journal of Lightwave Technology (1983)
Dynamic single-mode semiconductor lasers with a distributed reflector
Y. Suematsu;S. Arai;K. Kishino.
Journal of Lightwave Technology (1983)
The temperature dependence of the threshold current of GaInAsP/InP DH lasers
M. Asada;A. Adams;K. Stubkjaer;Y. Suematsu.
IEEE Journal of Quantum Electronics (1981)
The temperature dependence of the threshold current of GaInAsP/InP DH lasers
M. Asada;A. Adams;K. Stubkjaer;Y. Suematsu.
IEEE Journal of Quantum Electronics (1981)
Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes
K. Ishigaki;M. Shiraishi;S. Suzuki;M. Asada.
Electronics Letters (2012)
Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes
K. Ishigaki;M. Shiraishi;S. Suzuki;M. Asada.
Electronics Letters (2012)
1.5-1.6 µm GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector
F. Koyama;Y. Suematsu;S. Arai;T. Tawee.
IEEE Journal of Quantum Electronics (1983)
1.5-1.6 µm GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector
F. Koyama;Y. Suematsu;S. Arai;T. Tawee.
IEEE Journal of Quantum Electronics (1983)
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