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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6558
World Ranking
5287
National Ranking
222

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to single-mode semiconductor lasers for optical communications

Overview

Shigehisa Arai is affiliated with the Tokyo Institute of Technology in Japan. Their research primarily spans fields of engineering and physics and astronomy, with a focus on electrical and electronic engineering and atomic and molecular physics, and optics. Their work also touches on artificial intelligence, as well as electronic, optical, and magnetic materials.

The central topics of Arai's research include photonic and optical devices, semiconductor lasers and optical devices, and neural networks and reservoir computing. Additional areas of interest cover photonic crystals and their applications, metamaterials and metasurfaces applications, and semiconductor quantum structures and devices.

Arai's recent papers demonstrate this range of expertise. These papers include:

  • "InP membrane integrated photonics research," published in 2020 in Semiconductor Science and Technology
  • "Control of slow-light effect in a metamaterial-loaded Si waveguide," published in 2020 in Optics Express
  • "Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C," published in 2020 in Japanese Journal of Applied Physics

Frequent publication venues for Arai include Semiconductor Science and Technology, Optics Express, and Japanese Journal of Applied Physics.

Collaborations form a significant component of Arai's research activities. Frequent co-authors include Nobuhiko Nishiyama, Tomohiro Amemiya, Yuqing Jiao, Jos van der Tol, and Jorn van Engelen.

Recognition for contributions to the field includes being named an IEEE Fellow in 2010 for contributions to single-mode semiconductor lasers for optical communications.

Best Publications

  • The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption

    Alfred R. Adams;Masahiro Asada;Yasuharu Suematsu;Shigehisa Arai

  • Dynamic single-mode semiconductor lasers with a distributed reflector

    Y. Suematsu;S. Arai;K. Kishino

  • The temperature dependence of the threshold current of GaInAsP/InP DH lasers

    M. Asada;A. Adams;K. Stubkjaer;Y. Suematsu

  • Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes

    K. Ishigaki;M. Shiraishi;S. Suzuki;M. Asada

  • 1.5-1.6 µm GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector

    F. Koyama;Y. Suematsu;S. Arai;T. Tawee

  • Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization

    Toshiyuki Takizawa;Shigehisa Arai;Masafumi Nakahara

  • Light Emission from Quantum-Box Structure by Current Injection

    Yasuyuki Miyamoto;Ming Cao;Yasushi Shingai;Kazuhito Furuya

  • Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector

    Y. Tohmori;Y. Suematsu;H. Tsushima;S. Arai

  • High-performance 1.55-/spl mu/m wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions

    N. Nunoya;M. Nakamura;M. Morshed;S. Tamura

  • Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation

    T. Okamoto;N. Nunoya;Y. Onodera;T. Yamazaki

  • Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating

    S. Sakamoto;H. Naitoh;M. Ohtake;Y. Nishimoto

  • GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide

    Y. Abe;K. Kishino;Y. Suematsu;S. Arai

  • Lasing characteristics of 1.5 mu m GaInAsP-InP SCH-BIG-DR lasers

    J.-I. Shim;K. Komori;S. Arai;I. Arima

  • Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

    Yoshio Itaya;Yasuharu Suematsu;Shinya Katayama;Katsumi Kishino

  • GaInAsP/InP Membrane Lasers for Optical Interconnects

    S. Arai;N. Nishiyama;T. Maruyama;T. Okumura

  • 1.11-1.67 µm

    S. Arai;Y. Suematsu;Y. Itaya

  • A new structure for high-power TW-SLA (Travelling wave semiconductor laser amplifier)

    G. Bendelli;K. Komori;S. Arai;Y. Suematsu

  • Reduction of effective linewidth enhancement factor alpha /sub eff/ of DFB lasers with complex coupling coefficients

    K. Kudo;J.I. Shim;K. Komori;S. Arai

  • GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.

    Takeo Maruyama;Tadashi Okumura;Shinichi Sakamoto;Koji Miura

  • Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 µm Wavelength InGaAsP/InP Lasers

    Kristian Stubkjaer;Masahiro Asada;Shigehisa Arai;Yasuharu Suematsu

Frequent Co-Authors

Yasuharu Suematsu
Yasuharu Suematsu Tokyo Institute of Technology
Tetsuya Mizumoto
Tetsuya Mizumoto Tokyo Institute of Technology
Masahiro Asada
Masahiro Asada Tokyo Institute of Technology
Hideki Yagi
Hideki Yagi University of Electro-Communications
Fumio Koyama
Fumio Koyama Tokyo Institute of Technology
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Katsumi Kishino
Katsumi Kishino Sophia University
Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo

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