World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
15067
World Ranking
1617
National Ranking
54

Research.com Recognitions

  • 2021 - IEEE Edison Medal For pioneering contributions to the concept, physics, and development of the vertical-cavity surface-emitting laser.
  • 2007 - Member of the National Academy of Engineering For contributions to advanced optoelectronics, including the vertical-cavity surface-emitting injection laser.
  • 2003 - IEEE Daniel E. Noble Award for Emerging Technologies "For pioneering developments of surface emitting semiconductor lasers and arrays."

Overview

Kenichi Iga is affiliated with the Tokyo Institute of Technology in Japan and specializes in the field of engineering, with a focus on electrical and electronic engineering. Their research primarily encompasses semiconductor lasers and optical devices, contributing to related areas such as photonic and optical devices, molecular junctions and nanostructures, and optical network technologies.

Themes and topics central to their work include:

  • Semiconductor Lasers and Optical Devices
  • Photonic and Optical Devices
  • Molecular Junctions and Nanostructures
  • Optical Network Technologies

Kenichi Iga has collaborated with coauthors including D. Bimberg and F. Koyama.

Their recent publications include:

  • "Highly-efficient VCSEL breaking the limit," 2024, Light Science & Applications
  • "Back Matter," 2020, SPIE eBooks
  • "Front Matter," 2020, SPIE eBooks
  • "VCSEL How Was it Born and Grown Since One-Century After Edison?," 2022, 2022 28th International Semiconductor Laser Conference (ISLC)

Frequent publication venues for Kenichi Iga's work include SPIE eBooks, Light Science & Applications, and the 2022 28th International Semiconductor Laser Conference (ISLC).

Their book publication comprises "The VCSEL Odyssey," published by SPIE in 2020.

Awards received in the course of their career are as follows:

  • IEEE Edison Medal, 2021, for pioneering contributions to the concept, physics, and development of the vertical-cavity surface-emitting laser
  • Member of the National Academy of Engineering, 2007, for contributions to advanced optoelectronics, including the vertical-cavity surface-emitting injection laser
  • IEEE Daniel E. Noble Award for Emerging Technologies, 2003, for pioneering developments of surface emitting semiconductor lasers and arrays

Best Publications

  • Surface emitting semiconductor lasers

    K. Iga;F. Koyama;S. Kinoshita

  • GaInAsP/InP surface emitting injection lasers.

    Haruhisa Soda;Ken-ichi Iga;Chiyuki Kitahara;Yasuharu Suematsu

  • Surface-emitting laser-its birth and generation of new optoelectronics field

    K. Iga

  • Frequency chirping in external modulators

    F. Koyama;K. Iga

  • Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser

    Fumio Koyama;Susumu Kinoshita;Kenichi Iga

  • Vertical-Cavity Surface-Emitting Laser: Its Conception and Evolution

    Kenichi Iga

  • Spontaneous emission factor of a microcavity DBR surface-emitting laser

    T. Baba;T. Hamano;F. Koyama;K. Iga

  • Stacked planar optics: an application of the planar microlens

    Kenichi Iga;Masahiro Oikawa;S. Misawa;Junichi Banno

  • Electron reflectance of multiquantum barrier (MQB)

    K. Iga;H. Uenohara;F. Koyama

  • Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

    Y. Hayashi;T. Mukaihara;N. Hatori;N. Ohnoki

  • Fundamentals of microoptics

    K. Iga;Y. Kokubun;M. Oikawa;Juan Jose Aldasoro

  • Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching

    L. A. Coldren;B. I. Miller;K. Iga;J. A. Rentschler

  • Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA

    K. Iga;S. Kinoshita;F. Koyama

  • GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet

    L. A. Coldren;K. Iga;B. I. Miller;J. A. Rentschler

  • Room temperature cw operation of GaAs vertical cavity surface emitting laser

    Fumio Koyama;Susumu Kinoshita;Kenichi Iga

  • Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser

    T. Baba;Y. Yogo;K. Suzuki;F. Koyama

  • Distributed-index planar microlens

    Masahiro Oikawa;Kenichi Iga

  • Array of Distributed-Index Planar Micro-Lenses Prepared from Ion Exchange Technique

    Masahiro Oikawa;Kenichi Iga;Takeshi Sanada;Noboru Yamamoto

  • Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector

    T. Mukaihara;N. Ohnoki;Y. Hayashi;N. Hatori

  • Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence

    Takeo Kageyama;Tomoyuki Miyamoto;Shigeki Makino;Fumio Koyama

  • Room‐temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser

    K. Iga;S. Ishikawa;S. Ohkouchi;T. Nishimura

  • Introduction to Nanotechnology

    健一 伊賀;Kenichi Iga

Frequent Co-Authors

Fumio Koyama
Fumio Koyama Tokyo Institute of Technology
Toshihiko Baba
Toshihiko Baba Yokohama National University
Yasuo Kokubun
Yasuo Kokubun Yokohama National University
Yasuharu Suematsu
Yasuharu Suematsu Tokyo Institute of Technology
Kenji Kawashima
Kenji Kawashima University of Tokyo
Larry A. Coldren
Larry A. Coldren University of California, Santa Barbara
Barry Miller
Barry Miller Nokia (United States)
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Giancarlo C. Righini
Giancarlo C. Righini National Research Council (CNR)
Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology

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