World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
10473
World Ranking
2002
National Ranking
67

Materials Science

D-Index
57
Citations
10554
World Ranking
8018
National Ranking
247

Nelson Tansu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Nelson Tansu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 361 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Nelson Tansu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Nelson Tansu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2021 - IEEE Fellow For contributions to semiconductor photonics technologies
  • 2016 - Fellow, National Academy of Inventors

Overview

Nelson Tansu is affiliated with the University of Adelaide in Australia and has a research focus spanning materials science, physics and astronomy, and engineering. Their work concentrates on various subfields including electronic, optical and magnetic materials, materials chemistry, condensed matter physics, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics include semiconductor devices and materials, particularly GaN-based semiconductor devices, as well as Ga2O3 and related materials. Other topics they have explored are ZnO doping and properties, semiconductor quantum structures and devices, semiconductor materials and devices, plasmonic and surface plasmon research, and graphene research and applications.

Nelson Tansu has published in several frequent venues such as:

  • IEEE Journal of Quantum Electronics
  • Molecules
  • Applied Physics Letters
  • Journal of Crystal Growth
  • Sensors

Some of Nelson Tansu's recent papers include:

  • A Review on the Development of Tunable Graphene Nanoantennas for Terahertz Optoelectronic and Plasmonic Applications (2020) in Sensors
  • Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide (2021) in Molecules
  • Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance (2020) in Molecules
  • Functionalized Reduced Graphene Oxide Thin Films for Ultrahigh CO2 Gas Sensing Performance at Room Temperature (2021) in Nanomaterials
  • A Review on Graphene-Based Light Emitting Functional Devices (2020) in Molecules

Frequent collaborators in Nelson Tansu's research include Jonathan J. Wierer, Wei Sun, Justin C. Goodrich, Renbo Song, and Damir Borovac. These coauthors have contributed to multiple joint publications, reflecting ongoing collaborative efforts across their projects.

Nelson Tansu has been recognized by professional organizations for their contributions to the field. In 2021, they were named an IEEE Fellow for contributions to semiconductor photonics technologies. Earlier, in 2016, they were elected a Fellow of the National Academy of Inventors.

Best Publications

  • Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

    Hongping Zhao;Guangyu Liu;Jing Zhang;Jonathan D Poplawsky

  • Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

    Ronald A. Arif;Yik-Khoon Ee;Nelson Tansu

  • Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

    Hongping Zhao;R.A. Arif;Yik-Khoon Ee;N. Tansu

  • Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

    Hongping Zhao;Guangyu Liu;Ronald A. Arif;Nelson Tansu

  • Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

    Xiao-Hang Li;Renbo Song;Yik-Khoon Ee;Pisist Kumnorkaew

  • Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays

    Yik-Khoon Ee;Ronald A. Arif;Nelson Tansu;Pisist Kumnorkaew

  • Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays.

    Pisist Kumnorkaew;Yik-Khoon Ee;Nelson Tansu;James F. Gilchrist

  • Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

    Hongping Zhao;Guangyu Liu;Jing Zhang;R. A. Arif

  • Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

    Hongping Zhao;Guangyu Liu;Nelson Tansu

  • Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

    Nelson Tansu;Nicholas J. Kirsch;Luke J. Mawst

  • Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

    Jing Zhang;Hongping Zhao;Nelson Tansu

  • Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

    Jing Zhang;Nelson Tansu

  • Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

    Hongping Zhao;Guangyu Liu;Xiao-Hang Li;G. S. Huang

  • Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array

    Won Hoe Koo;Wooram Youn;Peifen Zhu;Xiao-Hang Li

  • Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

    Yik-Khoon Ee;J.M. Biser;W. Cao;H.M. Chan

  • III-Nitride Photonics

    Nelson Tansu;Hongping Zhao;Guangyu Liu;Xiao-Hang Li

  • Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

    Guangyu Liu;Jing Zhang;Chee Keong Tan;N. Tansu

  • Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

    R.A. Arif;Hongping Zhao;Yik-Khoon Ee;N. Tansu

  • Current injection efficiency of InGaAsN quantum-well lasers

    Nelson Tansu;Luke J. Mawst

  • Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

    Jing Zhang;Hongping Zhao;Nelson Tansu

Frequent Co-Authors

Hongping Zhao
Hongping Zhao The Ohio State University
Luke J. Mawst
Luke J. Mawst University of Wisconsin–Madison
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Jonathan D. Poplawsky
Jonathan D. Poplawsky Oak Ridge National Laboratory
Helen M. Chan
Helen M. Chan Lehigh University
Jerry R. Meyer
Jerry R. Meyer United States Naval Research Laboratory
Igor Vurgaftman
Igor Vurgaftman United States Naval Research Laboratory
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
Jacob B. Khurgin
Jacob B. Khurgin Johns Hopkins University
Thomas F. Kuech
Thomas F. Kuech University of Wisconsin–Madison

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