World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
34
Citations
7894
World Ranking
9121
National Ranking
2548

Overview

Jonathan J. Wierer is affiliated with North Carolina State University in the United States. Their research primarily focuses on semiconductor materials and devices, with a strong emphasis on GaN-based technologies and related materials.

Their body of work spans several main fields of study, including Physics and Astronomy, Materials Science, and Engineering. Within these areas, the subfields they contribute to include Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering, and Atomic and Molecular Physics and Optics.

Wierer's research encompasses a variety of topics, notably:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Metal and Thin Film Mechanics
  • Acoustic Wave Resonator Technologies

The scientist's recent papers demonstrate active contributions in journals focused on semiconductor and materials research. Selected recent publications include:

  • "Electrical properties of MgO/GaN metal-oxide-semiconductor structures," 2020, Solid-State Electronics
  • "Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes," 2023, IEEE Journal of Quantum Electronics
  • "Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition," 2020, Journal of Crystal Growth
  • "Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy," 2020, Journal of Crystal Growth
  • "AlInN/GaN diodes for power electronic devices," 2020, Applied Physics Express

Frequent co-authors in Wierer's collaborative network include:

  • Haotian Xue
  • Elia Palmese
  • Nelson Tansu
  • Renbo Song
  • Daniel Rogers

Their work is regularly published in significant journals such as the Journal of Crystal Growth, Journal of Applied Physics, IEEE Journal of Quantum Electronics, IEEE Transactions on Electron Devices, and Applied Physics Letters.

Best Publications

  • III -nitride photonic-crystal light-emitting diodes with high extraction efficiency

    Jonathan J. Wierer;Aurelien David;Mischa M. Megens

  • High-power AlGaInN flip-chip light-emitting diodes

    J. J. Wierer;D. A. Steigerwald;M. R. Krames;J. J. O’Shea

  • Comparison between blue lasers and light-emitting diodes for future solid-state lighting

    Jonathan J. Wierer;Jeffrey Y. Tsao;Dmitry S. Sizov

  • InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

    J. J. Wierer;M. R. Krames;J. E. Epler;N. F. Gardner

  • Toward Smart and Ultra-Efficient Solid-State Lighting

    Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer

  • High Power LEDs - Technology Status and Market Applications

    F.M. Steranka;J. Bhat;D. Collins;L. Cook

  • Performance of high-power AlInGaN light emitting diodes

    A.Y. Kim;W. Götz;D.A. Steigerwald;J.J. Wierer

  • Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

    N. F. Gardner;J. C. Kim;J. J. Wierer;Y. C. Shen

  • Four-color laser white illuminant demonstrating high color-rendering quality

    Alexander Neumann;Jonathan Wierer;Wendy L. Davis;Yoshihiro Ohno

  • High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

    Tae Il Kim;Yei Hwan Jung;Jizhou Song;Daegon Kim

  • Photonic crystal light emitting device

    Jonathan J. Wierer;Michael R. Krames;John E. Epler

  • Semiconductor light emitting devices

    Nathan F. Gardner;Jonathan J. Wierer;Gerd O. Mueller;Michael R. Krames

  • Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

    Y. C. Shen;J. J. Wierer;M. R. Krames;M. J. Ludowise

  • III‐Nitride Micro‐LEDs for Efficient Emissive Displays

    Jonathan J. Wierer;Nelson Tansu

  • Vertical GaN Power Diodes With a Bilayer Edge Termination

    Jeramy R. Dickerson;Andrew A. Allerman;Benjamin N. Bryant;Arthur J. Fischer

  • III-nitride core?shell nanowire arrayed solar cells

    Jonathan J Wierer;Qiming Li;Daniel D Koleske;Stephen R Lee

  • Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

    James R. Riley;Sonal Padalkar;Qiming Li;Ping Lu

  • The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

    J. J. Wierer;A. J. Fischer;D. D. Koleske

  • Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

    Andrew M. Armstrong;Benjamin N. Bryant;Mary H. Crawford;Daniel D. Koleske

  • High‐Power III‐Nitride Emitters for Solid‐State Lighting

    M. R. Krames;J. Bhat;D. Collins;N. F. Gardner

Frequent Co-Authors

Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Nelson Tansu
Nelson Tansu University of Adelaide
George T. Wang
George T. Wang Sandia National Laboratories
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Mihail M. Sigalas
Mihail M. Sigalas University of Patras
Robert Kaplar
Robert Kaplar Sandia National Laboratories

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Jonathan J. Wierer

Trending Scientists