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Michael R. Krames

Michael R. Krames

D-Index & Metrics

Engineering and Technology

D-Index
67
Citations
22459
World Ranking
1270
National Ranking
413

Research.com Recognitions

  • 2018 - IEEE Fellow For leadership in GaN-based light-emitting device physics and its commercialization

Overview

Michael R. Krames is affiliated with Arkesso in the United States and has a research portfolio spanning materials science, engineering, and medicine. Their work mainly contributes to materials chemistry, electrical and electronic engineering, and medical fields such as pulmonary and respiratory medicine, global and planetary change, and radiology.

The scientist's research explores several main topics including luminescence properties of advanced materials, perovskite materials and applications, quantum dots synthesis and properties, infection control and ventilation, gas sensing nanomaterials and sensors, luminescence and fluorescent materials, and laser applications in dentistry and medicine.

Michael R. Krames has published in various scientific journals. Recent papers include:

  • YAG:Ce3+ Phosphor: From Micron-Sized Workhorse for General Lighting to a Bright Future on the Nanoscale, 2020, Chemical Reviews
  • Saturation Mechanisms in Common LED Phosphors, 2021, ACS Photonics
  • Eu3+ Sensitization via Nonradiative Interparticle Energy Transfer Using Inorganic Nanoparticles, 2020, The Journal of Physical Chemistry Letters
  • Effects of Near-Infrared Light on Well-Being and Health in Human Subjects with Mild Sleep-Related Complaints: A Double-Blind, Randomized, Placebo-Controlled Study, 2022, Biology
  • Practical considerations for Ultraviolet-C radiation mediated decontamination of N95 respirator against SARS-CoV-2 virus, 2021, PLoS ONE

Frequent co-authors who have collaborated with Michael R. Krames include:

  • Anne C. Berends
  • Marie Anne van de Haar
  • Andries Meijerink
  • Freddy T. Rabouw
  • Guillaume Golovkine

Publication venues where Michael R. Krames frequently contributes are:

  • Chemical Reviews
  • ACS Photonics
  • The Journal of Physical Chemistry Letters
  • Biology
  • PLoS ONE

An award received by Michael R. Krames is the IEEE Fellow designation awarded in 2018 for leadership in GaN-based light-emitting device physics and its commercialization.

Best Publications

  • Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

    M.R. Krames;O.B. Shchekin;R. Mueller-Mach;G.O. Mueller

  • Auger recombination in InGaN measured by photoluminescence

    Y. C. Shen;G. O. Mueller;S. Watanabe;N. F. Gardner

  • High-power AlGaInN flip-chip light-emitting diodes

    J. J. Wierer;D. A. Steigerwald;M. R. Krames;J. J. O’Shea

  • Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

    N. F. Gardner;G. O. Müller;Y. C. Shen;G. Chen

  • High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

    M. R. Krames;M. Ochiai-Holcomb;G. E. Höfler;C. Carter-Coman

  • High-power phosphor-converted light-emitting diodes based on III-Nitrides

    R. Mueller-Mach;G.O. Mueller;M.R. Krames;T. Trottier

  • InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

    J. J. Wierer;M. R. Krames;J. E. Epler;N. F. Gardner

  • Geordnete Grenzflächentexturierung für ein lichtemittierendes Bauelement

    Michael R Krames;Jun Fred A Kish

  • Research challenges to ultra-efficient inorganic solid-state lighting

    Julia M. Phillips;Michael E. Coltrin;Mary H. Crawford;Arthur J. Fischer

  • History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

    Shuji Nakamura;M. R. Krames

  • III-nitride light emitting devices fabricated by substrate removal

    Carrie Carter Coman;Fred A. Kish;Michael R Krames;Paul S Martin

  • Polarized semiconductor light emitting device

    Matthijs H. Keuper;Michael R. Krames;Gerd O. Mueller

  • Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

    Aurélien David;Michael J. Grundmann;John F. Kaeding;Nathan F. Gardner

  • III-Phosphide and III-Arsenide flip chip light-emitting devices

    Michael D. Camras;Daniel A. Steigerwald;Frank M. Steranka;Michael J. Ludowise

  • Wavelength-converted semiconductor light-emitting device

    Michael R. Krames;Gerd O. Mueller

  • Use of electrophoresis for manufacturing fluorescence- converted light emitting semiconductor structure coated in conformal manner

    William David Collins;Michael R Krames;Van Leth Nicolaas Joseph Martin;Godefridus Johannes Verhoeckx

  • History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes

    R.D. Dupuis;M.R. Krames

  • Light emitting devices with improved light extraction efficiency

    Michael D. Camras;Michael R. Krames;Wayne L. Snyder;Frank M. Steranka

  • LED Including Photonic Crystal Structure

    Michael R. Krames;Mihail M. Sigalas;Jonathan J. Wierer

  • High Power LEDs - Technology Status and Market Applications

    F.M. Steranka;J. Bhat;D. Collins;L. Cook

  • Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks

    Carrie Carter Coman;R. Scott Kern;Fred A. Kish;Michael R Krames

  • Performance of high-power AlInGaN light emitting diodes

    A.Y. Kim;W. Götz;D.A. Steigerwald;J.J. Wierer

Frequent Co-Authors

Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Fred A. Kish
Fred A. Kish Infinera (United States)
Aurelien J. F. David
Aurelien J. F. David Google (United States)
Arto V. Nurmikko
Arto V. Nurmikko Brown University
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Mihail M. Sigalas
Mihail M. Sigalas University of Patras
Richard P. Schneider
Richard P. Schneider Infinera (United States)
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Scott W. Corzine
Scott W. Corzine Infinera (United States)
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico

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