World's Best Scientists 2026 revealed!
Michael R. Krames

Michael R. Krames

D-Index & Metrics

Engineering and Technology

D-Index
67
Citations
22459
World Ranking
1271
National Ranking
414

Michael R. Krames publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Michael R. Krames sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 217 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Michael R. Krames D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Michael R. Krames sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 67 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2018 - IEEE Fellow For leadership in GaN-based light-emitting device physics and its commercialization

Overview

Michael R. Krames is affiliated with Arkesso in the United States and has a research portfolio spanning materials science, engineering, and medicine. Their work mainly contributes to materials chemistry, electrical and electronic engineering, and medical fields such as pulmonary and respiratory medicine, global and planetary change, and radiology.

The scientist's research explores several main topics including luminescence properties of advanced materials, perovskite materials and applications, quantum dots synthesis and properties, infection control and ventilation, gas sensing nanomaterials and sensors, luminescence and fluorescent materials, and laser applications in dentistry and medicine.

Michael R. Krames has published in various scientific journals. Recent papers include:

  • YAG:Ce3+ Phosphor: From Micron-Sized Workhorse for General Lighting to a Bright Future on the Nanoscale, 2020, Chemical Reviews
  • Saturation Mechanisms in Common LED Phosphors, 2021, ACS Photonics
  • Eu3+ Sensitization via Nonradiative Interparticle Energy Transfer Using Inorganic Nanoparticles, 2020, The Journal of Physical Chemistry Letters
  • Effects of Near-Infrared Light on Well-Being and Health in Human Subjects with Mild Sleep-Related Complaints: A Double-Blind, Randomized, Placebo-Controlled Study, 2022, Biology
  • Practical considerations for Ultraviolet-C radiation mediated decontamination of N95 respirator against SARS-CoV-2 virus, 2021, PLoS ONE

Frequent co-authors who have collaborated with Michael R. Krames include:

  • Anne C. Berends
  • Marie Anne van de Haar
  • Andries Meijerink
  • Freddy T. Rabouw
  • Guillaume Golovkine

Publication venues where Michael R. Krames frequently contributes are:

  • Chemical Reviews
  • ACS Photonics
  • The Journal of Physical Chemistry Letters
  • Biology
  • PLoS ONE

An award received by Michael R. Krames is the IEEE Fellow designation awarded in 2018 for leadership in GaN-based light-emitting device physics and its commercialization.

Best Publications

  • Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

    M.R. Krames;O.B. Shchekin;R. Mueller-Mach;G.O. Mueller

  • Auger recombination in InGaN measured by photoluminescence

    Y. C. Shen;G. O. Mueller;S. Watanabe;N. F. Gardner

  • High-power AlGaInN flip-chip light-emitting diodes

    J. J. Wierer;D. A. Steigerwald;M. R. Krames;J. J. O’Shea

  • Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

    N. F. Gardner;G. O. Müller;Y. C. Shen;G. Chen

  • High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

    M. R. Krames;M. Ochiai-Holcomb;G. E. Höfler;C. Carter-Coman

  • High-power phosphor-converted light-emitting diodes based on III-Nitrides

    R. Mueller-Mach;G.O. Mueller;M.R. Krames;T. Trottier

  • InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

    J. J. Wierer;M. R. Krames;J. E. Epler;N. F. Gardner

  • Geordnete Grenzflächentexturierung für ein lichtemittierendes Bauelement

    Michael R Krames;Jun Fred A Kish

  • Research challenges to ultra-efficient inorganic solid-state lighting

    Julia M. Phillips;Michael E. Coltrin;Mary H. Crawford;Arthur J. Fischer

  • History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

    Shuji Nakamura;M. R. Krames

  • III-nitride light emitting devices fabricated by substrate removal

    Carrie Carter Coman;Fred A. Kish;Michael R Krames;Paul S Martin

  • Polarized semiconductor light emitting device

    Matthijs H. Keuper;Michael R. Krames;Gerd O. Mueller

  • Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

    Aurélien David;Michael J. Grundmann;John F. Kaeding;Nathan F. Gardner

  • III-Phosphide and III-Arsenide flip chip light-emitting devices

    Michael D. Camras;Daniel A. Steigerwald;Frank M. Steranka;Michael J. Ludowise

  • Wavelength-converted semiconductor light-emitting device

    Michael R. Krames;Gerd O. Mueller

  • Use of electrophoresis for manufacturing fluorescence- converted light emitting semiconductor structure coated in conformal manner

    William David Collins;Michael R Krames;Van Leth Nicolaas Joseph Martin;Godefridus Johannes Verhoeckx

  • History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes

    R.D. Dupuis;M.R. Krames

  • Light emitting devices with improved light extraction efficiency

    Michael D. Camras;Michael R. Krames;Wayne L. Snyder;Frank M. Steranka

  • LED Including Photonic Crystal Structure

    Michael R. Krames;Mihail M. Sigalas;Jonathan J. Wierer

  • High Power LEDs - Technology Status and Market Applications

    F.M. Steranka;J. Bhat;D. Collins;L. Cook

  • Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks

    Carrie Carter Coman;R. Scott Kern;Fred A. Kish;Michael R Krames

  • Performance of high-power AlInGaN light emitting diodes

    A.Y. Kim;W. Götz;D.A. Steigerwald;J.J. Wierer

Frequent Co-Authors

Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Fred A. Kish
Fred A. Kish Infinera (United States)
Aurelien J. F. David
Aurelien J. F. David Google (United States)
Arto V. Nurmikko
Arto V. Nurmikko Brown University
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Mihail M. Sigalas
Mihail M. Sigalas University of Patras
Richard P. Schneider
Richard P. Schneider Infinera (United States)
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Scott W. Corzine
Scott W. Corzine Infinera (United States)
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico

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