World's Best Scientists 2026 revealed!
Aurelien J. F. David

Aurelien J. F. David

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
5463
World Ranking
5757
National Ranking
1956

Aurelien J. F. David publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Aurelien J. F. David sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 59 publications — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Aurelien J. F. David D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Aurelien J. F. David sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Aurelien J. F. David is affiliated with Google in the United States. Their research spans primarily the field of Physics and Astronomy, with a focus on Atomic and Molecular Physics and Optics, Condensed Matter Physics, and Electrical and Electronic Engineering. Their academic contributions include work at the intersection of GaN-based semiconductor devices and materials, semiconductor quantum structures and devices, and the study of semiconductor materials and devices.

Their recent publications cover a range of topics related to semiconductor physics and optoelectronics. Notable papers include:

  • High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%, 2021, Applied Physics Letters
  • Long-Range Carrier Diffusion in (In,Ga)N Quantum Wells and Implications from Fundamentals to Devices, 2021, Physical Review Applied
  • Excitons in a disordered medium: A numerical study in InGaN quantum wells, 2022, Physical Review Research
  • Improved Method for Evaluating and Specifying the Chromaticity of Light Sources, 2022, LEUKOS The Journal of the Illuminating Engineering Society of North America
  • Issue Information, 2020, Neuropathology

Their frequent coauthors include Panpan Li, Hongjian Li, Haojun Zhang, Cheyenne Lynsky, and Yunxuan Yang.

Their work has been published in journals such as:

  • Applied Physics Letters
  • Physical Review Applied
  • LEUKOS The Journal of the Illuminating Engineering Society of North America
  • Physical Review Research
  • Neuropathology

Main topics covered by their research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Color Science and Applications
  • Color perception and design
  • Impact of Light on Environment and Health
  • Quantum and electron transport phenomena

Best Publications

  • III -nitride photonic-crystal light-emitting diodes with high extraction efficiency

    Jonathan J. Wierer;Aurelien David;Mischa M. Megens

  • Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

    Aurélien David;Michael J. Grundmann;John F. Kaeding;Nathan F. Gardner

  • Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

    Aurélien David;Michael J. Grundmann

  • Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

    Aurélien David;Tetsuo Fujii;Rajat Sharma;Kelly McGroddy

  • Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

    Christophe A. Hurni;Aurelien David;Michael J. Cich;Rafael I. Aldaz

  • Development of the IES method for evaluating the color rendition of light sources.

    Aurelien David;Paul T. Fini;Kevin W. Houser;Yoshi Ohno

  • Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

    Aurélien David;Michael J. Grundmann

  • Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

    A. David;Cedrik Meier;R. Sharma;F. S. Diana

  • Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

    K. Mcgroddy;A. David;Elison Matioli;M. Iza

  • Review of measures for light-source color rendition and considerations for a two-measure system for characterizing color rendition

    Kevin W. Houser;Minchen Wei;Aurélien David;Michael R. Krames

  • Optimization of Light-Diffracting Photonic-Crystals for High Extraction Efficiency LEDs

    A. David;H. Benisty;C. Weisbuch

  • Photonic crystal laser lift-off GaN light-emitting diodes

    Aurélien David;Tetsuo Fujii;Brendan Moran;Shuji Nakamura

  • Photonic crystal light-emitting sources

    Aurélien David;Henri Benisty;Claude Weisbuch;Claude Weisbuch

  • Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

    Michael J. Cich;Rafael I. Aldaz;Arpan Chakraborty;Aurelien David

  • Light-emitting diode with remote porous layer, remote phosphor layer and reflective submount

    Aurelien J. David;Rafael I. Aldaz;Mark Butterworth;Serge J. Bierhuizen

  • Photonic structures for efficient light extraction and conversion in multi-color light emitting devices

    Frederic S. Diana;Aurelien J. F. David;Pierre M. Petroff;Claude C. A. Weisbuch

  • Circadian friendly led light source

    Michael R. Krames;Aurelien J. F. David

  • Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells

    S. Keller;C. Schaake;N. A. Fichtenbaum;C. J. Neufeld

  • Led lamps with improved quality of light

    Aurelien J. F. David;Troy A. Trottier;Michael R. Krames

  • Fast factorization rule and plane-wave expansion method for two-dimensional photonic crystals with arbitrary hole-shape

    Aurélien David;Henri Benisty;Claude Weisbuch

  • Review—The Physics of Recombinations in III-Nitride Emitters

    Aurelien David;Nathan G. Young;Cory Lund;Michael D. Craven

  • Surface-Roughened Light-Emitting Diodes: An Accurate Model

    A. David

  • GaN light-emitting diodes with Archimedean lattice photonic crystals

    Aurélien David;Tetsuo Fujii;Elison Matioli;Rajat Sharma

  • Colour gamut size and shape influence colour preference

    M Wei;KW Houser;A David;Krames

Frequent Co-Authors

Claude Weisbuch
Claude Weisbuch University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Elison Matioli
Elison Matioli École Polytechnique Fédérale de Lausanne
Linda T. Romano
Linda T. Romano Palo Alto Research Center
Pierre Petroff
Pierre Petroff University of California, Santa Barbara
Kevin Huang
Kevin Huang University of South Carolina
Arpan Chakraborty
Arpan Chakraborty Apple (United States)

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Related Online Degrees & Career Pathways

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Moreover, some opt for an instructional design degree online to transition into educational roles, training the next generation of engineers or developing technical curriculum for corporations. These interconnected pathways enhance both expertise and employability.

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