The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Han-Youl Ryu sits on this spectrum.
This scientist: 187 publications — 43rd percentile
43% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 804 publications or more.
The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Han-Youl Ryu sits on this spectrum.
This scientist: 40 D-Index — 27th percentile
27% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 107 D-Index or more.
Han-Youl Ryu is affiliated with Inha University in South Korea and has contributed extensively to the fields of Physics and Astronomy as well as Engineering. Their research output spans various subfields including Condensed Matter Physics, Atomic and Molecular Physics with Optics, Electrical and Electronic Engineering, Materials Chemistry, and Electronic, Optical and Magnetic Materials.
Their main research focus revolves around GaN-based semiconductor devices and materials, a topic extensively covered across 30 of their publications. Other significant topics include Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, Photocathodes and Microchannel Plates, Semiconductor Lasers and Optical Devices, Color Science and Applications, and ZnO doping and properties.
Han-Youl Ryu has published numerous papers in various scientific journals. Selected recent publications include:
The venues where they commonly publish include:
Frequent collaborators in their research network consist of several scholars working in related fields. Notable coauthors include Chibuzo Onwukaeme, Bohae Lee, Jeongsang Pyo, Hyun Yeol Ryu, and Geunhwan Ryu.
Overall, Han-Youl Ryu's research contributes to advancing the understanding and development of semiconductor materials and devices, with particular emphasis on gallium nitride (GaN) based technologies and their optical and electronic properties.
M. Notomi;A. Shinya;S. Mitsugi;E. Kuramochi
Han-Youl Ryu;Hyun-Sung Kim;Jong-In Shim
Han-Youl Ryu;Il-Gyun Choi;Hyo-Sik Choi;Jong-In Shim
Han-Youl Ryu;Soon-Hong Kwon;Yong-Jae Lee;Yong-Hee Lee
Ho-Sun Paek;Seidan Ri;Han-Youl Ryu;Tan Sakong
Han-Youl Ryu;Masaya Notomi;Yong-Hee Lee
Hong-Gyu Park;Jeong-Ki Hwang;Joon Huh;Han-Youl Ryu
Han Youl Ryu;Se Heon Kim;Hong Gyu Park;Jeong Ki Hwang
Jeong Ki Hwang;Han Youl Ryu;Dae Sung Song;Il Young Han
Hong Gyu Park;Jeong Ki Hwang;Joon Huh;Han Youl Ryu
Se Heon Kim;Han Youl Ryu;Hong Gyu Park;Guk Hyun Kim
Soon-Hong Kwon;Han-Youl Ryu;Guk-Hyun Kim;Yong-Hee Lee
J.K. Hwang;H.Y. Ryu;D.S. Song;I.Y. Han
Han-Youl Ryu;Dong-Soo Shin;Jong-In Shim
Han-Youl Ryu;Jong-In Shim
Han-Youl Ryu;Masaya Notomi;Guk-Hyun Kim;Yong-Hee Lee
Jeong-Ki Hwang;Han-Youl Ryu;Yong-Hee Lee
Han-Youl Ryu;Hong-Gyu Park;Yong-Hee Lee
Han-Youl Ryu;Kyoung-Ho Ha;Jung-Hye Chae;Ok-Hyun Nam
O. H. Nam;K. H. Ha;J. S. Kwak;S. N. Lee
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