2016 - IEEE Fellow For contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs
Michael Kneissl focuses on Optoelectronics, Sapphire, Light-emitting diode, Nitride and Laser. Michael Kneissl interconnects Epitaxy and Optics in the investigation of issues within Optoelectronics. His work in Sapphire addresses subjects such as Metalorganic vapour phase epitaxy, which are connected to disciplines such as Diffraction.
The concepts of his Light-emitting diode study are interwoven with issues in Wavelength and Equivalent series resistance. His Nitride research is multidisciplinary, incorporating perspectives in Excimer laser and Semiconductor. Michael Kneissl has included themes like Quantum well, Polarization and Heterojunction in his Wide-bandgap semiconductor study.
His main research concerns Optoelectronics, Optics, Light-emitting diode, Laser and Sapphire. His research integrates issues of Quantum well, Nitride and Epitaxy in his study of Optoelectronics. His Quantum well study which covers Photoluminescence that intersects with Molecular physics.
Optics is frequently linked to Gallium nitride in his study. His Light-emitting diode research is multidisciplinary, incorporating elements of Wavelength, Electroluminescence, Wide-bandgap semiconductor, Ultraviolet and Quantum efficiency. His Sapphire research includes elements of Crystallography, Metalorganic vapour phase epitaxy, Excimer laser and Chemical vapor deposition.
Michael Kneissl spends much of his time researching Optoelectronics, Light-emitting diode, Diode, Sapphire and Quantum well. The Optoelectronics study combines topics in areas such as Laser and Epitaxy. His studies deal with areas such as Metalorganic vapour phase epitaxy, Doping, Electroluminescence, Wide-bandgap semiconductor and Quantum efficiency as well as Light-emitting diode.
His work is dedicated to discovering how Diode, Photocurrent are connected with Stress and other disciplines. His study focuses on the intersection of Sapphire and fields such as Substrate with connections in the field of Thin film. His research investigates the connection between Ultraviolet and topics such as Nitride that intersect with problems in Engineering physics.
His primary areas of investigation include Optoelectronics, Light-emitting diode, Diode, Ultraviolet and Wide-bandgap semiconductor. His work carried out in the field of Optoelectronics brings together such families of science as Sapphire, Laser, Optics and Epitaxy. His Light-emitting diode research integrates issues from Metalorganic vapour phase epitaxy, Electroluminescence, Band gap and Doping.
His Diode research is multidisciplinary, incorporating elements of Etching, Photocurrent, Absorption and Lithography. His Ultraviolet research includes elements of Wavelength, Aluminium, Nitride and Magnesium. His Wide-bandgap semiconductor research incorporates elements of Atomic physics and Analytical chemistry.
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Advances in group III-nitride-based deep UV light-emitting diode technology
M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller.
Semiconductor Science and Technology (2011)
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano.
Nature Photonics (2019)
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl.
Applied Physics Letters (1999)
Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.
M.A. Würtele;T. Kolbe;M. Lipsz;A. Külberg.
Water Research (2011)
Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
G. D. Chern;Hakan Engin Tureci;A. Douglas Stone;R. K. Chang.
Applied Physics Letters (2003)
Structure for nitride based laser diode with growth substrate removed, and method of manufacturing nitride based laser diode array structure
A Keyser Michael;エイ ケイセル ミカエル;P Bow David;ピー ボウ デビッド.
III-Nitride Ultraviolet Emitters
Michael Kneissl;Jens Rass.
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates
Tanya J. Cervantes;Linda T. Romano;Michael A. Kneissl.
InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl.
Applied Physics Letters (2000)
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
Michael A. Kneissl.
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