World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
17349
World Ranking
1022
National Ranking
24

Materials Science

D-Index
69
Citations
18125
World Ranking
4610
National Ranking
258

Michael Kneissl publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael Kneissl sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 483 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Michael Kneissl D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael Kneissl sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 68 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs

Overview

Michael Kneissl is affiliated with the Technical University of Berlin in Germany. Their research primarily focuses on semiconductor devices and materials, with particular emphasis on wide bandgap semiconductors and ultraviolet light-emitting diodes (LEDs).

The main fields of study encompassed in their work include:

  • Physics and Astronomy
  • Materials Science
  • Engineering

Subfields within these areas that are frequently addressed in their research comprise:

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering

Kneissl's scientific contributions deal extensively with several key topics such as:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Photocathodes and Microchannel Plates
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Semiconductor Lasers and Optical Devices

Their publication record includes recent papers like:

  • The 2020 UV emitter roadmap (2020), Journal of Physics D Applied Physics
  • Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs (2021), Scientific Reports
  • Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates (2020), Applied Physics Letters
  • Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire (2020), Photonics Research
  • Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models (2022), Scientific Reports

Their frequent co-authors include:

  • Tim Wernicke
  • Martin Guttmann
  • Norman Susilo
  • S. Einfeldt
  • Luca Sulmoni

Michael Kneissl's work is regularly published in journals such as:

  • Applied Physics Letters
  • physica status solidi (a)
  • Semiconductor Science and Technology
  • Journal of Physics D Applied Physics
  • Scientific Reports

In 2016, Kneissl was recognized as an IEEE Fellow for contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs.

Additionally, they have authored books including Semiconductor Nanophotonics (2020), published by Springer Nature.

Best Publications

  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano

  • Advances in group III-nitride-based deep UV light-emitting diode technology

    M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller

  • Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.

    M.A. Würtele;T. Kolbe;M. Lipsz;A. Külberg

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • III-Nitride Ultraviolet Emitters

    Michael Kneissl;Jens Rass

  • Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

    G. D. Chern;Hakan Engin Tureci;A. Douglas Stone;R. K. Chang

  • Structure for nitride based laser diode with growth substrate removed, and method of manufacturing nitride based laser diode array structure

    A Keyser Michael;エイ ケイセル ミカエル;P Bow David;ピー ボウ デビッド

  • Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates

    Tanya J. Cervantes;Linda T. Romano;Michael A. Kneissl

  • InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Metastability of Oxygen Donors in AlGaN

    M. D. McCluskey;N. M. Johnson;C. G. Van de Walle;D. P. Bour

  • Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure

    Michael A. Kneissl

  • método para produzir uma estrutura semicondutora de cavidade ressonante à base de nitreto

    Christopher L Chua;David P Bour;Michael A Kneissl

  • Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials

    William S. Wong;Michael A. Kneissl

  • Ultraviolet semiconductor laser diodes on bulk AlN

    Michael Kneissl;Zhihong Yang;Mark Teepe;Cliff Knollenberg

  • AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

    Norman Susilo;Sylvia Hagedorn;Dominik Jaeger;Hideto Miyake

  • Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

    J. E. Northrup;C. L. Chua;Z. Yang;T. Wunderer

  • Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

    Tim Kolbe;Arne Knauer;Chris Chua;Zhihong Yang

  • Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection

    Michael A. Kneissl;Peter Kiesel;Christian G. Van de Walle

  • Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

    M. Kneissl;M. Teepe;N. Miyashita;N. M. Johnson

  • III-nitride ultraviolet emitters : technology and applications

    Michael Kneissl;Jens Rass

Frequent Co-Authors

Markus Weyers
Markus Weyers Ferdinand-Braun-Institut
Linda T. Romano
Linda T. Romano Palo Alto Research Center
William S. Wong
William S. Wong University of Waterloo
John E. Northrup
John E. Northrup Palo Alto Research Center
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Tae Yeon Seong
Tae Yeon Seong Korea University
Hiroshi Amano
Hiroshi Amano Nagoya University
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Matteo Meneghini
Matteo Meneghini University of Padua

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