World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
17349
World Ranking
1022
National Ranking
25

Materials Science

D-Index
69
Citations
18125
World Ranking
4612
National Ranking
259

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs

Overview

Michael Kneissl is affiliated with the Technical University of Berlin in Germany. Their research primarily focuses on semiconductor devices and materials, with particular emphasis on wide bandgap semiconductors and ultraviolet light-emitting diodes (LEDs).

The main fields of study encompassed in their work include:

  • Physics and Astronomy
  • Materials Science
  • Engineering

Subfields within these areas that are frequently addressed in their research comprise:

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering

Kneissl's scientific contributions deal extensively with several key topics such as:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Photocathodes and Microchannel Plates
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Semiconductor Lasers and Optical Devices

Their publication record includes recent papers like:

  • The 2020 UV emitter roadmap (2020), Journal of Physics D Applied Physics
  • Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs (2021), Scientific Reports
  • Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates (2020), Applied Physics Letters
  • Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire (2020), Photonics Research
  • Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models (2022), Scientific Reports

Their frequent co-authors include:

  • Tim Wernicke
  • Martin Guttmann
  • Norman Susilo
  • S. Einfeldt
  • Luca Sulmoni

Michael Kneissl's work is regularly published in journals such as:

  • Applied Physics Letters
  • physica status solidi (a)
  • Semiconductor Science and Technology
  • Journal of Physics D Applied Physics
  • Scientific Reports

In 2016, Kneissl was recognized as an IEEE Fellow for contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs.

Additionally, they have authored books including Semiconductor Nanophotonics (2020), published by Springer Nature.

Best Publications

  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano

  • Advances in group III-nitride-based deep UV light-emitting diode technology

    M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller

  • Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.

    M.A. Würtele;T. Kolbe;M. Lipsz;A. Külberg

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • III-Nitride Ultraviolet Emitters

    Michael Kneissl;Jens Rass

  • Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

    G. D. Chern;Hakan Engin Tureci;A. Douglas Stone;R. K. Chang

  • Structure for nitride based laser diode with growth substrate removed, and method of manufacturing nitride based laser diode array structure

    A Keyser Michael;エイ ケイセル ミカエル;P Bow David;ピー ボウ デビッド

  • Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates

    Tanya J. Cervantes;Linda T. Romano;Michael A. Kneissl

  • InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Metastability of Oxygen Donors in AlGaN

    M. D. McCluskey;N. M. Johnson;C. G. Van de Walle;D. P. Bour

  • Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure

    Michael A. Kneissl

  • método para produzir uma estrutura semicondutora de cavidade ressonante à base de nitreto

    Christopher L Chua;David P Bour;Michael A Kneissl

  • Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials

    William S. Wong;Michael A. Kneissl

  • Ultraviolet semiconductor laser diodes on bulk AlN

    Michael Kneissl;Zhihong Yang;Mark Teepe;Cliff Knollenberg

  • AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

    Norman Susilo;Sylvia Hagedorn;Dominik Jaeger;Hideto Miyake

  • Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

    J. E. Northrup;C. L. Chua;Z. Yang;T. Wunderer

  • Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

    Tim Kolbe;Arne Knauer;Chris Chua;Zhihong Yang

  • Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection

    Michael A. Kneissl;Peter Kiesel;Christian G. Van de Walle

  • Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission

    M. Kneissl;M. Teepe;N. Miyashita;N. M. Johnson

  • III-nitride ultraviolet emitters : technology and applications

    Michael Kneissl;Jens Rass

Frequent Co-Authors

Markus Weyers
Markus Weyers Ferdinand-Braun-Institut
Linda T. Romano
Linda T. Romano Palo Alto Research Center
William S. Wong
William S. Wong University of Waterloo
John E. Northrup
John E. Northrup Palo Alto Research Center
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Tae Yeon Seong
Tae Yeon Seong Korea University
Hiroshi Amano
Hiroshi Amano Nagoya University
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Matteo Meneghini
Matteo Meneghini University of Padua

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