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Overview

Markus Weyers is affiliated with the Ferdinand-Braun-Institut in Germany. Their research predominantly spans the fields of physics and engineering, with a focus on materials science. The main areas of study include condensed matter physics, electrical and electronic engineering, electronic, optical and magnetic materials, atomic and molecular physics and optics, and materials chemistry.

Weyers's work centers on semiconductor materials and devices, particularly GaN-based semiconductor devices, Ga2O3 and related materials, ZnO doping and properties, semiconductor quantum structures and devices, semiconductor lasers and optical devices, advanced fiber laser technologies, and photonic and optical devices.

The scientist has contributed numerous publications in several notable academic journals. Frequent publication venues include:

  • physica status solidi (a)
  • Applied Physics Letters
  • Journal of Applied Physics
  • Semiconductor Science and Technology
  • physica status solidi (b)

Some recent papers authored or coauthored by Markus Weyers are:

  • The 2020 UV emitter roadmap, 2020, Journal of Physics D Applied Physics
  • Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs, 2021, Scientific Reports
  • Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire, 2020, Photonics Research
  • Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes, 2020, physica status solidi (a)
  • Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities, 2020, Applied Physics Letters

Collaborations form an important part of Weyers's research activities. Frequent co-authors include:

  • Sylvia Hagedorn
  • Michael Kneissl
  • S. Einfeldt
  • Tim Kolbe
  • Carsten Netzel

The research contributions by Markus Weyers focus on advancing the understanding and application of materials and devices related to ultraviolet light emitters and semiconductor technologies. Their work covers a range of topics from fundamental materials properties to the engineering of device performance.

Best Publications

  • Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

    Markus Weyers;Michio Sato;Hiroaki Ando

  • Advances in group III-nitride-based deep UV light-emitting diode technology

    M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller

  • Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.

    M.A. Würtele;T. Kolbe;M. Lipsz;A. Külberg

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3

    Markus Weyers;Michio Sato

  • AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

    Norman Susilo;Sylvia Hagedorn;Dominik Jaeger;Hideto Miyake

  • Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

    Tim Kolbe;Arne Knauer;Chris Chua;Zhihong Yang

  • Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

    Tim Wernicke;Lukas Schade;Lukas Schade;Carsten Netzel;Jens Rass

  • Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser

    P. Klopp;U. Griebner;M. Zorn;M. Weyers

  • A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

    N. Pütz;H. Heinecke;M. Heyen;P. Balk

  • Selective growth of GaAs in the MOMBE and MOCVD systems

    H. Heinecke;A. Brauers;F. Grafahrend;C. Plass

  • Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

    Frank Mehnke;Christian Kuhn;Martin Guttmann;Christoph Reich

  • High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

    M. Martens;J. Schlegel;P. Vogt;F. Brunner

  • Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

    Frank Mehnke;Tim Wernicke;Harald Pingel;Christian Kuhn

  • High-power 808 nm lasers with a super-large optical cavity

    A Knauer;G Erbert;R Staske;B Sumpf

  • Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

    Martin Martens;Frank Mehnke;Christian Kuhn;Chirstoph Reich

  • High quality AlGaN grown on ELO AlN/sapphire templates

    U. Zeimer;V. Kueller;A. Knauer;A. Mogilatenko

  • Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    Christoph Reich;Martin Guttmann;Martin Feneberg;Tim Wernicke

  • Effect of the AIN nucleation layer growth on AlN material quality

    O. Reentilä;F. Brunner;A. Knauer;A. Mogilatenko

  • Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

    E. Richter;Ch. Hennig;M. Weyers;F. Habel

  • Passively mode-locked Yb:KLu(WO4)2 oscillators.

    U. Griebner;S. Rivier;V. Petrov;M. Zorn

Frequent Co-Authors

Michael Kneissl
Michael Kneissl Technical University of Berlin
Götz Erbert
Götz Erbert TRUMPF Laser Gmbh
Uwe Griebner
Uwe Griebner Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy
Joachim Würfl
Joachim Würfl Ferdinand-Braun-Institut
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Thomas Elsaesser
Thomas Elsaesser Max Planck Society
Magdalena Aguiló
Magdalena Aguiló Rovira i Virgili University
Xavier Mateos
Xavier Mateos Rovira i Virgili University
Hans Lüth
Hans Lüth Forschungszentrum Jülich
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg

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