Optoelectronics, Epitaxy, Optics, Metalorganic vapour phase epitaxy and Sapphire are his primary areas of study. His Optoelectronics study combines topics in areas such as Quantum well and Laser. Markus Weyers has researched Epitaxy in several fields, including Doping, Crystallography, Dislocation, Cathodoluminescence and Diffraction.
Markus Weyers interconnects Heterojunction, Surface reconstruction, Surface science, Heterojunction bipolar transistor and Ternary compound in the investigation of issues within Optics. His Metalorganic vapour phase epitaxy research includes elements of Luminescence, Analytical chemistry, Chemical vapor deposition and Silicon. His work carried out in the field of Sapphire brings together such families of science as Gallium nitride, Substrate and Optical microscope.
His primary areas of investigation include Optoelectronics, Optics, Laser, Epitaxy and Metalorganic vapour phase epitaxy. His Optoelectronics research incorporates themes from Quantum well and Sapphire. Optics is often connected to Semiconductor in his work.
His Laser study integrates concerns from other disciplines, such as Cladding, Waveguide and Gallium arsenide. His biological study spans a wide range of topics, including Hydride, Doping, Thin film, Dislocation and Substrate. In Metalorganic vapour phase epitaxy, Markus Weyers works on issues like Analytical chemistry, which are connected to Mineralogy.
His primary areas of study are Optoelectronics, Light-emitting diode, Epitaxy, Sapphire and Laser. His studies in Optoelectronics integrate themes in fields like Quantum well, Metalorganic vapour phase epitaxy and Annealing. His studies deal with areas such as Wide-bandgap semiconductor, Electroluminescence, Ultraviolet and Quantum efficiency as well as Light-emitting diode.
His research integrates issues of Hydride, Doping, Diffraction, Crystallite and Chemical engineering in his study of Epitaxy. The various areas that Markus Weyers examines in his Sapphire study include Substrate and Dislocation. His Laser research is under the purview of Optics.
Markus Weyers mostly deals with Optoelectronics, Light-emitting diode, Sapphire, Epitaxy and Annealing. His Optoelectronics research includes themes of Metalorganic vapour phase epitaxy and Laser. His Light-emitting diode research is multidisciplinary, incorporating elements of Wavelength, Layer, Electroluminescence, Magnesium and Ultraviolet.
His Sapphire study incorporates themes from Crystallite, Substrate and Dislocation. His research investigates the link between Heterojunction and topics such as Doping that cross with problems in Gallium nitride. The study incorporates disciplines such as Quantum well, Photoluminescence and Cathodoluminescence in addition to Diode.
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Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
Markus Weyers;Michio Sato;Hiroaki Ando.
Japanese Journal of Applied Physics (1992)
Advances in group III-nitride-based deep UV light-emitting diode technology
M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller.
Semiconductor Science and Technology (2011)
Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.
M.A. Würtele;T. Kolbe;M. Lipsz;A. Külberg.
Water Research (2011)
Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
Markus Weyers;Michio Sato.
Applied Physics Letters (1993)
Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
Tim Kolbe;Arne Knauer;Chris Chua;Zhihong Yang.
Applied Physics Letters (2010)
Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
P. Klopp;U. Griebner;M. Zorn;M. Weyers.
Applied Physics Letters (2011)
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
Tim Wernicke;Lukas Schade;Lukas Schade;Carsten Netzel;Jens Rass.
Semiconductor Science and Technology (2012)
A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
N. Pütz;H. Heinecke;M. Heyen;P. Balk.
Journal of Crystal Growth (1986)
Selective growth of GaAs in the MOMBE and MOCVD systems
H. Heinecke;A. Brauers;F. Grafahrend;C. Plass.
Journal of Crystal Growth (1986)
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
Norman Susilo;Sylvia Hagedorn;Dominik Jaeger;Hideto Miyake.
Applied Physics Letters (2018)
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