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Electronics and Electrical Engineering

D-Index
33
Citations
4793
World Ranking
6044
National Ranking
174

Overview

Joachim Würfl is affiliated with the Ferdinand-Braun-Institut in Germany. Their research primarily focuses on semiconductor materials and devices, with significant contributions to fields such as engineering, materials science, and physics and astronomy.

Their work extensively covers subfields including electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and atomic and molecular physics and optics. The scientist has a notable presence in studies related to GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor materials and devices, silicon carbide semiconductor technologies, semiconductor quantum structures and devices, and advanced photocatalysis techniques.

Frequent co-authors collaborating with Joachim Würfl include:

  • Oliver Hilt
  • Kornelius Tetzner
  • Frank Brunner
  • Eldad Bahat-Treidel
  • Enrico Brusaterra

Publication venues where Würfl has commonly published work are:

  • Applied Physics Letters
  • physica status solidi (a)
  • Microelectronics Reliability
  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters

Key recent papers by Würfl include:

  • Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices, 2020, Microelectronics Reliability
  • SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes, 2022, Applied Physics Letters
  • Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1, 2023, Japanese Journal of Applied Physics
  • GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate, 2022, IEEE Transactions on Power Electronics
  • Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes, 2023, IEEE Electron Device Letters

The research output by Würfl demonstrates a sustained focus on semiconductor technologies encompassing materials synthesis, device optimization, and power electronics applications.

Best Publications

  • AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{ m ON}} imes A$

    Eldad Bahat-Treidel;Frank Brunner;Oliver Hilt;Eunjung Cho

  • Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

    E. Bahat-Treidel;O. Hilt;R. Zhytnytska;A. Wentzel

  • Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

    E. Bahat-Treidel;O. Hilt;F. Brunner;J. Wurfl

  • AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

    Eldad Bahat-Treidel;Oliver Hilt;Frank Brunner;Victor Sidorov

  • Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

    M. Tapajna;O. Hilt;E. Bahat-Treidel;J. Wurfl

  • Analysis of the Survivability of GaN Low-Noise Amplifiers

    M. Rudolph;R. Behtash;R. Doerner;K. Hirche

  • Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

    O. Hilt;F. Brunner;E. Cho;A. Knauer

  • High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

    M. Martens;J. Schlegel;P. Vogt;F. Brunner

  • Lateral 1.8 kV $eta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit

    Kornelius Tetzner;Eldad Bahat Treidel;Oliver Hilt;Andreas Popp

  • Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

    Nasser Badawi;Oliver Hilt;Eldad Bahat-Treidel;Jan Bocker

  • Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

    G.J. Riedel;J.W. Pomeroy;K.P. Hilton;J.O. Maclean

  • Reliability issues of GaN based high voltage power devices

    J. Wuerfl;E. Bahat-Treidel;F. Brunner;E. Cho

  • Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer

    O. Hilt;A. Knauer;F. Brunner;E. Bahat-Treidel

  • Techniques towards GaN power transistors with improved high voltage dynamic switching properties

    J. Wurfl;O. Hilt;E. Bahat-Treidel;R. Zhytnytska

  • AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

    E. Bahat-Treidel;R. Lossy;J. Wurfl;G. Trankle

  • Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors

    N Chaturvedi;U Zeimer;J Würfl;G Tränkle

  • Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

    M. Ťapajna;O. Hilt;E. Bahat-Treidel;J. Würfl

  • Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

    Oliver Hilt;Eldad Bahat-Treidel;Eunjung Cho;Sebastian Singwald

  • Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

    G. Sonia;F. Brunner;A. Denker;R. Lossy

  • Self-Heating in GaN Transistors Designed for High-Power Operation

    Jan Kuzmik;Milan Tapajna;Lukas Valik;Marian Molnar

  • Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

    S. A. Chevtchenko;E. Cho;F. Brunner;E. Bahat-Treidel

  • Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer

    Oliver Hilt;Arne Knauer;Frank Brunner;Eldad Bahat-Treidel

Frequent Co-Authors

Markus Weyers
Markus Weyers Ferdinand-Braun-Institut
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Hartmut G. Roskos
Hartmut G. Roskos Goethe University Frankfurt
Nuno Borges Carvalho
Nuno Borges Carvalho University of Aveiro
Michael J. Uren
Michael J. Uren University of Bristol
Martin Kuball
Martin Kuball University of Bristol
Michael Kneissl
Michael Kneissl Technical University of Berlin
Erik Janzén
Erik Janzén Linköping University

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