World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4793
World Ranking
6044
National Ranking
173

Joachim Würfl publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Joachim Würfl sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 202 publications — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Joachim Würfl D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Joachim Würfl sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Joachim Würfl is affiliated with the Ferdinand-Braun-Institut in Germany. Their research primarily focuses on semiconductor materials and devices, with significant contributions to fields such as engineering, materials science, and physics and astronomy.

Their work extensively covers subfields including electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and atomic and molecular physics and optics. The scientist has a notable presence in studies related to GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, semiconductor materials and devices, silicon carbide semiconductor technologies, semiconductor quantum structures and devices, and advanced photocatalysis techniques.

Frequent co-authors collaborating with Joachim Würfl include:

  • Oliver Hilt
  • Kornelius Tetzner
  • Frank Brunner
  • Eldad Bahat-Treidel
  • Enrico Brusaterra

Publication venues where Würfl has commonly published work are:

  • Applied Physics Letters
  • physica status solidi (a)
  • Microelectronics Reliability
  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters

Key recent papers by Würfl include:

  • Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices, 2020, Microelectronics Reliability
  • SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes, 2022, Applied Physics Letters
  • Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1, 2023, Japanese Journal of Applied Physics
  • GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate, 2022, IEEE Transactions on Power Electronics
  • Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes, 2023, IEEE Electron Device Letters

The research output by Würfl demonstrates a sustained focus on semiconductor technologies encompassing materials synthesis, device optimization, and power electronics applications.

Best Publications

  • AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{ m ON}} imes A$

    Eldad Bahat-Treidel;Frank Brunner;Oliver Hilt;Eunjung Cho

  • Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

    E. Bahat-Treidel;O. Hilt;R. Zhytnytska;A. Wentzel

  • Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

    E. Bahat-Treidel;O. Hilt;F. Brunner;J. Wurfl

  • AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

    Eldad Bahat-Treidel;Oliver Hilt;Frank Brunner;Victor Sidorov

  • Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

    M. Tapajna;O. Hilt;E. Bahat-Treidel;J. Wurfl

  • Analysis of the Survivability of GaN Low-Noise Amplifiers

    M. Rudolph;R. Behtash;R. Doerner;K. Hirche

  • Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

    O. Hilt;F. Brunner;E. Cho;A. Knauer

  • High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

    M. Martens;J. Schlegel;P. Vogt;F. Brunner

  • Lateral 1.8 kV $eta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit

    Kornelius Tetzner;Eldad Bahat Treidel;Oliver Hilt;Andreas Popp

  • Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

    Nasser Badawi;Oliver Hilt;Eldad Bahat-Treidel;Jan Bocker

  • Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

    G.J. Riedel;J.W. Pomeroy;K.P. Hilton;J.O. Maclean

  • Reliability issues of GaN based high voltage power devices

    J. Wuerfl;E. Bahat-Treidel;F. Brunner;E. Cho

  • Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer

    O. Hilt;A. Knauer;F. Brunner;E. Bahat-Treidel

  • Techniques towards GaN power transistors with improved high voltage dynamic switching properties

    J. Wurfl;O. Hilt;E. Bahat-Treidel;R. Zhytnytska

  • AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

    E. Bahat-Treidel;R. Lossy;J. Wurfl;G. Trankle

  • Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors

    N Chaturvedi;U Zeimer;J Würfl;G Tränkle

  • Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

    M. Ťapajna;O. Hilt;E. Bahat-Treidel;J. Würfl

  • Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

    Oliver Hilt;Eldad Bahat-Treidel;Eunjung Cho;Sebastian Singwald

  • Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

    G. Sonia;F. Brunner;A. Denker;R. Lossy

  • Self-Heating in GaN Transistors Designed for High-Power Operation

    Jan Kuzmik;Milan Tapajna;Lukas Valik;Marian Molnar

  • Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

    S. A. Chevtchenko;E. Cho;F. Brunner;E. Bahat-Treidel

  • Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer

    Oliver Hilt;Arne Knauer;Frank Brunner;Eldad Bahat-Treidel

Frequent Co-Authors

Markus Weyers
Markus Weyers Ferdinand-Braun-Institut
Viktor Krozer
Viktor Krozer Goethe University Frankfurt
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Nuno Borges Carvalho
Nuno Borges Carvalho University of Aveiro
Hartmut G. Roskos
Hartmut G. Roskos Goethe University Frankfurt
Stefan Müller
Stefan Müller Otto-von-Guericke University Magdeburg
Martin Kuball
Martin Kuball University of Bristol
Michael J. Uren
Michael J. Uren University of Bristol

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