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Electronics and Electrical Engineering

D-Index
55
Citations
14330
World Ranking
2148
National Ranking
112

Materials Science

D-Index
55
Citations
14084
World Ranking
8477
National Ranking
337

Overview

Michael J. Uren is affiliated with the University of Bristol in the United Kingdom. Their research primarily focuses on semiconductor devices and materials, with an emphasis on GaN-based technologies. The main fields of study include Engineering, Physics and Astronomy, and Materials Science, while subfields cover Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Atomic and Molecular Physics and Optics.

Their work spans several key topics, including:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

Michael J. Uren has published numerous papers. Recent publications include:

  • "Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs," 2021, Japanese Journal of Applied Physics
  • "The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs," 2020, IEEE Transactions on Electron Devices
  • "GaN-on-diamond technology platform: Bonding-free membrane manufacturing process," 2020, AIP Advances
  • "Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors," 2020, IEEE Electron Device Letters
  • "Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution," 2021, Nature Electronics

The venues where Michael J. Uren frequently publishes consist of:

  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Semiconductor Science and Technology
  • Nature Electronics

Collaboration forms a significant part of their research efforts. Frequent co-authors include Martin Kuball, Matthew D. Smith, James W. Pomeroy, Feiyuan Yang, and Abhishek Mishra.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

    Unknown

  • An experimental and theoretical study of the formation and microstructure of porous silicon

    M.I.J. Beale;J.D. Benjamin;M.J. Uren;N.G. Chew

  • Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

    M. Kuball;J.M. Hayes;M.J. Uren;I. Martin

  • 1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors

    M. J. Uren;D. J. Day;M. J. Kirton

  • Microstructure and formation mechanism of porous silicon

    M. I. J. Beale;N. G. Chew;M. J. Uren;A. G. Cullis

  • Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

    M. J. Uren;J. Moreke;M. Kuball

  • Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

    A. Sarua;Hangfeng Ji;K.P. Hilton;D.J. Wallis

  • Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

    A. Sarua;Hangfeng Ji;M. Kuball;M.J. Uren

  • Punch-through in short-channel AlGaN/GaN HFETs

    M.J. Uren;K.J. Nash;R.S. Balmer;T. Martin

  • Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques

    B.M. Tenbroek;M.S.L. Lee;W. Redman-White;J.T. Bunyan

  • “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

    Michael J. Uren;Serge Karboyan;Indranil Chatterjee;Alexander Pooth

  • Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

    Martin H H Kuball;S Rajasingam;Andrei Sarua;MJ Uren

  • Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

    M. Kuball;G.J. Riedel;J.W. Pomeroy;A. Sarua

  • Individual defects at the Si:SiO2 interface

    M J Kirton;M J Uren;S Collins;M Schulz

  • Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

    W.S. Tan;M.J. Uren;P.A. Houston;R.T. Green

  • Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

    Marco Silvestri;Michael J. Uren;Martin Kuball

  • Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

    R.J.T. Simms;J.W. Pomeroy;M.J. Uren;T. Martin

  • High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

    M. Radosavljevic;T. Ashley;A. Andreev;S.D. Coomber

  • Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

    Michael J. Uren;Marco Silvestri;Markus Casar;Godefridus Adrianus Maria Hurkx

  • Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias

    Andrei Sarua;H Ji;Martin H H Kuball;MJ Uren

Frequent Co-Authors

Martin Kuball
Martin Kuball University of Bristol
Paul J. Tasker
Paul J. Tasker Cardiff University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Paul D. Brown
Paul D. Brown Mayo Clinic
Matteo Meneghini
Matteo Meneghini University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Michael Pepper
Michael Pepper University College London
Adrian Wells
Adrian Wells University of Manchester
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London

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