What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Transistor
- Electrical engineering
Michael J. Uren mainly focuses on Optoelectronics, Transistor, Wide-bandgap semiconductor, Field-effect transistor and High-electron-mobility transistor.
His research integrates issues of Thermal resistance, Gallium nitride, Raman spectroscopy and Leakage in his study of Optoelectronics.
As a member of one scientific family, Michael J. Uren mostly works in the field of Transistor, focusing on Silicon and, on occasion, Electron temperature, Hall effect and Thermal Hall effect.
His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Algan gan, Leakage test, Electronic engineering and Dispersion.
His studies in Field-effect transistor integrate themes in fields like Electron mobility, Condensed matter physics, Semiconductor device, Noise and MOSFET.
His High-electron-mobility transistor study incorporates themes from Substrate, Operating temperature, Acceptor and Analytical chemistry.
His most cited work include:
- An experimental and theoretical study of the formation and microstructure of porous silicon (431 citations)
- The 2018 GaN power electronics roadmap (355 citations)
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (286 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of investigation include Optoelectronics, Transistor, Wide-bandgap semiconductor, Gallium nitride and High-electron-mobility transistor.
His Optoelectronics research integrates issues from Algan gan, Field-effect transistor and Voltage, Electrical engineering, Leakage.
His research investigates the connection with Field-effect transistor and areas like Raman spectroscopy which intersect with concerns in Thermography.
Within one scientific family, Michael J. Uren focuses on topics pertaining to Silicon on insulator under Electrical engineering, and may sometimes address concerns connected to MOSFET.
His work carried out in the field of Wide-bandgap semiconductor brings together such families of science as Passivation, Electroluminescence and Power semiconductor device.
The concepts of his Gallium nitride study are interwoven with issues in Aluminium nitride, Radio frequency and Analytical chemistry.
He most often published in these fields:
- Optoelectronics (66.56%)
- Transistor (21.78%)
- Wide-bandgap semiconductor (18.10%)
What were the highlights of his more recent work (between 2016-2021)?
- Optoelectronics (66.56%)
- Leakage (9.51%)
- Transistor (21.78%)
In recent papers he was focusing on the following fields of study:
Michael J. Uren mostly deals with Optoelectronics, Leakage, Transistor, Gallium nitride and High-electron-mobility transistor.
Michael J. Uren connects Optoelectronics with Temperature measurement in his research.
His Leakage study also includes fields such as
- Chemical vapor deposition together with Wide-bandgap semiconductor and Breakdown voltage,
- Silicon nitride which is related to area like Electric potential,
- Voltage that intertwine with fields like Nanotechnology.
Michael J. Uren focuses mostly in the field of Transistor, narrowing it down to topics relating to Nitride and, in certain cases, Biasing and High electron.
His Gallium nitride study combines topics in areas such as Field-effect transistor, Capacitive sensing, Photonics and Heterojunction.
His biological study spans a wide range of topics, including Capacitance, Buffer design and Current.
Between 2016 and 2021, his most popular works were:
- The 2018 GaN power electronics roadmap (355 citations)
- “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs (75 citations)
- Pulsed Large Signal RF Performance of Field-Plated Ga 2 O 3 MOSFETs (30 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Transistor
- Electrical engineering
Michael J. Uren mainly investigates Optoelectronics, Leakage, Transistor, Gallium nitride and Temperature measurement.
Michael J. Uren is studying Wide-bandgap semiconductor, which is a component of Optoelectronics.
Michael J. Uren interconnects Acceptor and Breakdown voltage in the investigation of issues within Wide-bandgap semiconductor.
His work deals with themes such as Chemical vapor deposition, High-electron-mobility transistor, Field effect, Epitaxy and Reverse bias, which intersect with Leakage.
The study incorporates disciplines such as Photonics and Power electronics in addition to Transistor.
His Gallium nitride research includes themes of Electron mobility, Doping and Engineering physics.
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