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Michael J. Uren

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 55 2148 2060 112 108 348 14330
Materials Science 55 8475 8186 337 319 335 14084

Michael J. Uren publications per year

The chart shows the history of publications by Michael J. Uren between 1979 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Michael J. Uren published across 47 years, from 1979 to 2025, averaging 7.5 papers a year. Output peaked at 19 publications in 2006. 5 of the 354 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1979 to 2025. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2006. 1979: 1 publication 1980: 1 publication 1981: 4 publications 1982: 2 publications 1983: 1 publication 1984: 0 publications 1985: 3 publications 1986: 3 publications 1987: 2 publications 1988: 4 publications 1989: 5 publications 1990: 5 publications 1991: 1 publication 1992: 6 publications 1993: 9 publications 1994: 2 publications 1995: 4 publications 1996: 8 publications 1997: 9 publications 1998: 4 publications 1999: 16 publications 2000: 10 publications 2001: 14 publications 2002: 11 publications 2003: 12 publications 2004: 9 publications 2005: 12 publications 2006: 19 publications 2007: 16 publications 2008: 13 publications 2009: 9 publications 2010: 8 publications 2011: 6 publications 2012: 10 publications 2013: 9 publications 2014: 10 publications 2015: 14 publications 2016: 11 publications 2017: 11 publications 2018: 13 publications 2019: 12 publications 2020: 12 publications 2021: 8 publications 2022: 4 publications 2023: 6 publications 2024: 3 publications 2025: 2 publications
1979 2025

354 publications in total across all disciplines

View publications per year as a table
Michael J. Uren: publications per year, 1979 to 2025
Year Publications
1979 1
1980 1
1981 4
1982 2
1983 1
1984 0
1985 3
1986 3
1987 2
1988 4
1989 5
1990 5
1991 1
1992 6
1993 9
1994 2
1995 4
1996 8
1997 9
1998 4
1999 16
2000 10
2001 14
2002 11
2003 12
2004 9
2005 12
2006 19
2007 16
2008 13
2009 9
2010 8
2011 6
2012 10
2013 9
2014 10
2015 14
2016 11
2017 11
2018 13
2019 12
2020 12
2021 8
2022 4
2023 6
2024 3
2025 2
Total 354
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Michael J. Uren publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael J. Uren sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 348 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 348
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Michael J. Uren D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael J. Uren sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 55 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 55 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97 55
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Michael J. Uren is affiliated with the University of Bristol in the United Kingdom. Their research primarily focuses on semiconductor devices and materials, with an emphasis on GaN-based technologies. The main fields of study include Engineering, Physics and Astronomy, and Materials Science, while subfields cover Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Atomic and Molecular Physics and Optics.

Their work spans several key topics, including:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

Michael J. Uren has published numerous papers. Recent publications include:

  • "Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs," 2021, Japanese Journal of Applied Physics
  • "The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs," 2020, IEEE Transactions on Electron Devices
  • "GaN-on-diamond technology platform: Bonding-free membrane manufacturing process," 2020, AIP Advances
  • "Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors," 2020, IEEE Electron Device Letters
  • "Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution," 2021, Nature Electronics

The venues where Michael J. Uren frequently publishes consist of:

  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Semiconductor Science and Technology
  • Nature Electronics

Collaboration forms a significant part of their research efforts. Frequent co-authors include Martin Kuball, Matthew D. Smith, James W. Pomeroy, Feiyuan Yang, and Abhishek Mishra.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

    Unknown

  • An experimental and theoretical study of the formation and microstructure of porous silicon

    M.I.J. Beale;J.D. Benjamin;M.J. Uren;N.G. Chew

  • Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

    M. Kuball;J.M. Hayes;M.J. Uren;I. Martin

  • 1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors

    M. J. Uren;D. J. Day;M. J. Kirton

  • Microstructure and formation mechanism of porous silicon

    M. I. J. Beale;N. G. Chew;M. J. Uren;A. G. Cullis

  • Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

    M. J. Uren;J. Moreke;M. Kuball

  • Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

    A. Sarua;Hangfeng Ji;K.P. Hilton;D.J. Wallis

  • Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

    A. Sarua;Hangfeng Ji;M. Kuball;M.J. Uren

  • Punch-through in short-channel AlGaN/GaN HFETs

    M.J. Uren;K.J. Nash;R.S. Balmer;T. Martin

  • Self-heating effects in SOI MOSFETs and their measurement by small signal conductance techniques

    B.M. Tenbroek;M.S.L. Lee;W. Redman-White;J.T. Bunyan

  • “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

    Michael J. Uren;Serge Karboyan;Indranil Chatterjee;Alexander Pooth

  • Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

    Martin H H Kuball;S Rajasingam;Andrei Sarua;MJ Uren

  • Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

    M. Kuball;G.J. Riedel;J.W. Pomeroy;A. Sarua

  • Individual defects at the Si:SiO2 interface

    M J Kirton;M J Uren;S Collins;M Schulz

  • Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

    W.S. Tan;M.J. Uren;P.A. Houston;R.T. Green

  • Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

    Marco Silvestri;Michael J. Uren;Martin Kuball

  • Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

    R.J.T. Simms;J.W. Pomeroy;M.J. Uren;T. Martin

  • High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

    M. Radosavljevic;T. Ashley;A. Andreev;S.D. Coomber

  • Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

    Michael J. Uren;Marco Silvestri;Markus Casar;Godefridus Adrianus Maria Hurkx

  • Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias

    Andrei Sarua;H Ji;Martin H H Kuball;MJ Uren

Frequent Co-Authors

Martin Kuball
Martin Kuball University of Bristol
Paul J. Tasker
Paul J. Tasker Cardiff University
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Paul D. Brown
Paul D. Brown Mayo Clinic
Matteo Meneghini
Matteo Meneghini University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Michael Pepper
Michael Pepper University College London
Denis Marcon
Denis Marcon Imec
Adrian Wells
Adrian Wells University of Manchester
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London

External Links

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Publications: 67

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Publications: 44

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Publications: 42

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