World's Best Scientists 2026 revealed!
Christophe Gaquiere

Christophe Gaquiere

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 37 5106 4902 96 93 410 6071

Christophe Gaquiere publications per year

The chart shows the history of publications by Christophe Gaquiere between 1993 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Christophe Gaquiere published across 33 years, from 1993 to 2025, averaging 13.4 papers a year. Output peaked at 33 publications in 2010. 9 of the 442 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1993 to 2025. Vertical axis: number of publications, 0 to 33. Peak 33 publications in 2010. 1993: 1 publication 1994: 2 publications 1995: 3 publications 1996: 3 publications 1997: 5 publications 1998: 5 publications 1999: 7 publications 2000: 5 publications 2001: 6 publications 2002: 8 publications 2003: 10 publications 2004: 13 publications 2005: 11 publications 2006: 14 publications 2007: 23 publications 2008: 20 publications 2009: 25 publications 2010: 33 publications 2011: 23 publications 2012: 22 publications 2013: 20 publications 2014: 16 publications 2015: 24 publications 2016: 13 publications 2017: 20 publications 2018: 14 publications 2019: 17 publications 2020: 19 publications 2021: 25 publications 2022: 16 publications 2023: 10 publications 2024: 6 publications 2025: 3 publications
1993 2025

442 publications in total across all disciplines

View publications per year as a table
Christophe Gaquiere: publications per year, 1993 to 2025
Year Publications
1993 1
1994 2
1995 3
1996 3
1997 5
1998 5
1999 7
2000 5
2001 6
2002 8
2003 10
2004 13
2005 11
2006 14
2007 23
2008 20
2009 25
2010 33
2011 23
2012 22
2013 20
2014 16
2015 24
2016 13
2017 20
2018 14
2019 17
2020 19
2021 25
2022 16
2023 10
2024 6
2025 3
Total 442
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Christophe Gaquiere publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Christophe Gaquiere sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 394–413 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 410 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152 410
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Christophe Gaquiere D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Christophe Gaquiere sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 37 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220 37
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Christophe Gaquiere is affiliated with the University of Lille in France, with a research profile spanning engineering and physics disciplines. Their work primarily focuses on electrical and electronic engineering within the broader fields of engineering and physics and astronomy.

The main subfields of study include Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Aerospace Engineering. Their research addresses various advanced topics such as:

  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Microwave Engineering and Waveguides
  • Electromagnetic Compatibility and Noise Suppression

Gaquiere's recent publications demonstrate a focus on semiconductor technologies and microwave systems. Selected papers include:

  • "SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems," 2021, IEEE Journal of Microwaves
  • "Drone Detection and Tracking Using RF Identification Signals," 2023, Sensors
  • "2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT," 2021, Microelectronic Engineering
  • "Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology," 2020, IEEE Transactions on Microwave Theory and Techniques
  • "Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization," 2022, IEEE Microwave Magazine

Frequent collaborators in Gaquiere's research include Mohammad A. Alim, Marc Margalef-Rovira, Sylvie Lépilliet, D. Gloria, and Philippe Ferrari, reflecting a collaborative research network across a range of semiconductor and microwave engineering topics.

Publication venues regularly featuring Gaquiere's work include highly specialized journals and magazines such as:

  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Transactions on Electron Devices
  • Microelectronics Journal
  • Microelectronics Reliability
  • Microelectronic Engineering

Their book publication, "Key enabling technologies for future wireless, wired, optical and satcom applications," was published by River Publishers eBooks in 2024, aligning with their expertise in enabling technologies for communications applications.

Best Publications

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    A. El Fatimy;N. Dyakonova;Y. Meziani;T. Otsuji

  • Room-temperature terahertz emission from nanometer field-effect transistors

    N. Dyakonova;A. El Fatimy;J. Łusakowski;W. Knap

  • Testing the Temperature Limits of GaN-Based HEMT Devices

    David Maier;Mohammed Alomari;Nicolas Grandjean;Jean-Francois Carlin

  • Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

    D. Ducatteau;A. Minko;V. Hoel;E. Morvan

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

    N. Sarazin;E. Morvan;M.A. di Forte Poisson;M. Oualli

  • InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

    M. Zaknoune;B. Bonte;C. Gaquiere;Y. Cordier

  • Status of the Emerging InAlN/GaN Power HEMT Technology

    F. Medjdoub;J.F. Carlin;C. Gaquière;N. Grandjean

  • Trap effects studies in GaN MESFETs by pulsed measurements

    S. Trassaert;B. Boudart;Christophe Gaquière;D. Théron

  • InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

    M. Alomari;F. Medjdoub;J.-F. Carlin;E. Feltin

  • Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

    C. Ostermaier;G. Pozzovivo;J.-F. Carlin;B. Basnar

  • Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT

    F. Medjdoub;N. Sarazin;M. Tordjman;M. Magis

  • A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX

    P. Chevalier;F. Pourchon;T. Lacave;G. Avenier

  • Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

    J. Kuzmik;S. Bychikhin;D. Pogany;Christophe Gaquière

  • Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

    Paul Sangaré;Guillaume Ducournau;Bertrand Grimbert;Virginie Brandli

  • AlGaN/GaN HEMT on (111) single crystalline diamond

    Mohammed Alomari;Amelie Dussaigne;Denis Martin;Nicolas Grandjean

  • Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

    Salah Saadaoui;Mohamed Mongi Ben Salem;Malek Gassoumi;Hassen Maaref

  • Diamond overgrown InAlN/GaN HEMT

    M. Alomari;M. Dipalo;S. Rossi;M.-A. Diforte-Poisson

Frequent Co-Authors

Guillaume Ducournau
Guillaume Ducournau University of Lille
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Erhard Kohn
Erhard Kohn North Carolina State University
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Giovanni Crupi
Giovanni Crupi University of Messina
Vincent Derycke
Vincent Derycke University of Paris-Saclay

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