World's Best Scientists 2026 revealed!
Christophe Gaquiere

Christophe Gaquiere

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
6071
World Ranking
5106
National Ranking
96

Christophe Gaquiere publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Christophe Gaquiere sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 410 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Christophe Gaquiere D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Christophe Gaquiere sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Christophe Gaquiere is affiliated with the University of Lille in France, with a research profile spanning engineering and physics disciplines. Their work primarily focuses on electrical and electronic engineering within the broader fields of engineering and physics and astronomy.

The main subfields of study include Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Aerospace Engineering. Their research addresses various advanced topics such as:

  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Microwave Engineering and Waveguides
  • Electromagnetic Compatibility and Noise Suppression

Gaquiere's recent publications demonstrate a focus on semiconductor technologies and microwave systems. Selected papers include:

  • "SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems," 2021, IEEE Journal of Microwaves
  • "Drone Detection and Tracking Using RF Identification Signals," 2023, Sensors
  • "2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT," 2021, Microelectronic Engineering
  • "Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology," 2020, IEEE Transactions on Microwave Theory and Techniques
  • "Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization," 2022, IEEE Microwave Magazine

Frequent collaborators in Gaquiere's research include Mohammad A. Alim, Marc Margalef-Rovira, Sylvie Lépilliet, D. Gloria, and Philippe Ferrari, reflecting a collaborative research network across a range of semiconductor and microwave engineering topics.

Publication venues regularly featuring Gaquiere's work include highly specialized journals and magazines such as:

  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Transactions on Electron Devices
  • Microelectronics Journal
  • Microelectronics Reliability
  • Microelectronic Engineering

Their book publication, "Key enabling technologies for future wireless, wired, optical and satcom applications," was published by River Publishers eBooks in 2024, aligning with their expertise in enabling technologies for communications applications.

Best Publications

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    A. El Fatimy;N. Dyakonova;Y. Meziani;T. Otsuji

  • Room-temperature terahertz emission from nanometer field-effect transistors

    N. Dyakonova;A. El Fatimy;J. Łusakowski;W. Knap

  • Testing the Temperature Limits of GaN-Based HEMT Devices

    David Maier;Mohammed Alomari;Nicolas Grandjean;Jean-Francois Carlin

  • Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

    D. Ducatteau;A. Minko;V. Hoel;E. Morvan

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

    N. Sarazin;E. Morvan;M.A. di Forte Poisson;M. Oualli

  • InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

    M. Zaknoune;B. Bonte;C. Gaquiere;Y. Cordier

  • Status of the Emerging InAlN/GaN Power HEMT Technology

    F. Medjdoub;J.F. Carlin;C. Gaquière;N. Grandjean

  • Trap effects studies in GaN MESFETs by pulsed measurements

    S. Trassaert;B. Boudart;Christophe Gaquière;D. Théron

  • InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

    M. Alomari;F. Medjdoub;J.-F. Carlin;E. Feltin

  • Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

    C. Ostermaier;G. Pozzovivo;J.-F. Carlin;B. Basnar

  • Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT

    F. Medjdoub;N. Sarazin;M. Tordjman;M. Magis

  • A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX

    P. Chevalier;F. Pourchon;T. Lacave;G. Avenier

  • Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

    J. Kuzmik;S. Bychikhin;D. Pogany;Christophe Gaquière

  • Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

    Paul Sangaré;Guillaume Ducournau;Bertrand Grimbert;Virginie Brandli

  • AlGaN/GaN HEMT on (111) single crystalline diamond

    Mohammed Alomari;Amelie Dussaigne;Denis Martin;Nicolas Grandjean

  • Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

    Salah Saadaoui;Mohamed Mongi Ben Salem;Malek Gassoumi;Hassen Maaref

  • Diamond overgrown InAlN/GaN HEMT

    M. Alomari;M. Dipalo;S. Rossi;M.-A. Diforte-Poisson

Frequent Co-Authors

Guillaume Ducournau
Guillaume Ducournau University of Lille
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Erhard Kohn
Erhard Kohn North Carolina State University
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Giovanni Crupi
Giovanni Crupi University of Messina
Vincent Derycke
Vincent Derycke University of Paris-Saclay

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