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Christophe Gaquiere

Christophe Gaquiere

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
6071
World Ranking
5106
National Ranking
96

Overview

Christophe Gaquiere is affiliated with the University of Lille in France, with a research profile spanning engineering and physics disciplines. Their work primarily focuses on electrical and electronic engineering within the broader fields of engineering and physics and astronomy.

The main subfields of study include Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Aerospace Engineering. Their research addresses various advanced topics such as:

  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Microwave Engineering and Waveguides
  • Electromagnetic Compatibility and Noise Suppression

Gaquiere's recent publications demonstrate a focus on semiconductor technologies and microwave systems. Selected papers include:

  • "SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems," 2021, IEEE Journal of Microwaves
  • "Drone Detection and Tracking Using RF Identification Signals," 2023, Sensors
  • "2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT," 2021, Microelectronic Engineering
  • "Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology," 2020, IEEE Transactions on Microwave Theory and Techniques
  • "Millimeter-Wave Phased Arrays and Over-the-Air Characterization for 5G and Beyond: Overview on 5G mm-Wave Phased Arrays and OTA Characterization," 2022, IEEE Microwave Magazine

Frequent collaborators in Gaquiere's research include Mohammad A. Alim, Marc Margalef-Rovira, Sylvie Lépilliet, D. Gloria, and Philippe Ferrari, reflecting a collaborative research network across a range of semiconductor and microwave engineering topics.

Publication venues regularly featuring Gaquiere's work include highly specialized journals and magazines such as:

  • IEEE Transactions on Microwave Theory and Techniques
  • IEEE Transactions on Electron Devices
  • Microelectronics Journal
  • Microelectronics Reliability
  • Microelectronic Engineering

Their book publication, "Key enabling technologies for future wireless, wired, optical and satcom applications," was published by River Publishers eBooks in 2024, aligning with their expertise in enabling technologies for communications applications.

Best Publications

  • Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

    F. Medjdoub;J.-F. Carlin;M. Gonschorek;E. Feltin

  • AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    A. El Fatimy;N. Dyakonova;Y. Meziani;T. Otsuji

  • Room-temperature terahertz emission from nanometer field-effect transistors

    N. Dyakonova;A. El Fatimy;J. Łusakowski;W. Knap

  • Testing the Temperature Limits of GaN-Based HEMT Devices

    David Maier;Mohammed Alomari;Nicolas Grandjean;Jean-Francois Carlin

  • Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

    D. Ducatteau;A. Minko;V. Hoel;E. Morvan

  • Current instabilities in GaN-based devices

    I. Daumiller;D. Theron;C. Gaquiere;A. Vescan

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

    N. Sarazin;E. Morvan;M.A. di Forte Poisson;M. Oualli

  • InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

    M. Zaknoune;B. Bonte;C. Gaquiere;Y. Cordier

  • Status of the Emerging InAlN/GaN Power HEMT Technology

    F. Medjdoub;J.F. Carlin;C. Gaquière;N. Grandjean

  • Trap effects studies in GaN MESFETs by pulsed measurements

    S. Trassaert;B. Boudart;Christophe Gaquière;D. Théron

  • InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

    M. Alomari;F. Medjdoub;J.-F. Carlin;E. Feltin

  • Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

    C. Ostermaier;G. Pozzovivo;J.-F. Carlin;B. Basnar

  • Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT

    F. Medjdoub;N. Sarazin;M. Tordjman;M. Magis

  • A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX

    P. Chevalier;F. Pourchon;T. Lacave;G. Avenier

  • Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

    J. Kuzmik;S. Bychikhin;D. Pogany;Christophe Gaquière

  • Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

    Paul Sangaré;Guillaume Ducournau;Bertrand Grimbert;Virginie Brandli

  • AlGaN/GaN HEMT on (111) single crystalline diamond

    Mohammed Alomari;Amelie Dussaigne;Denis Martin;Nicolas Grandjean

  • Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

    Salah Saadaoui;Mohamed Mongi Ben Salem;Malek Gassoumi;Hassen Maaref

  • Diamond overgrown InAlN/GaN HEMT

    M. Alomari;M. Dipalo;S. Rossi;M.-A. Diforte-Poisson

Frequent Co-Authors

Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Erhard Kohn
Erhard Kohn North Carolina State University
Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Giovanni Crupi
Giovanni Crupi University of Messina
Hamid Gualous
Hamid Gualous Université de Caen Normandie
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua

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