His primary scientific interests are in Molecular beam epitaxy, Photoluminescence, Condensed matter physics, Quantum well and Optoelectronics. His Molecular beam epitaxy research is multidisciplinary, incorporating perspectives in Sapphire, Heterojunction, Reflection high-energy electron diffraction and Optics. His Photoluminescence research is multidisciplinary, relying on both Oscillator strength, Quantum dot, X-ray absorption spectroscopy, Atomic physics and Wurtzite crystal structure.
The study incorporates disciplines such as Molecular physics, Radiative transfer and Semiconductor in addition to Condensed matter physics. Jean Massies combines topics linked to Luminescence with his work on Quantum well. Optoelectronics is closely attributed to Substrate in his study.
His main research concerns Molecular beam epitaxy, Optoelectronics, Photoluminescence, Condensed matter physics and Quantum well. His studies deal with areas such as Sapphire, Heterojunction, Reflection high-energy electron diffraction and Analytical chemistry as well as Molecular beam epitaxy. His Optoelectronics research includes elements of Substrate and Nitride.
His study in Photoluminescence is interdisciplinary in nature, drawing from both Luminescence, Molecular physics, Wide-bandgap semiconductor and Atomic physics. He combines subjects such as Monolayer and Excitation with his study of Condensed matter physics. His research integrates issues of X-ray absorption spectroscopy, Oscillator strength and Gallium arsenide in his study of Quantum well.
Jean Massies focuses on Optoelectronics, Quantum dot, Molecular beam epitaxy, Photoluminescence and Condensed matter physics. His biological study spans a wide range of topics, including Quantum well, Optics and Epitaxy. He studied Quantum well and Sublimation that intersect with Light emission.
His work carried out in the field of Molecular beam epitaxy brings together such families of science as Metalorganic vapour phase epitaxy, Gallium nitride, Analytical chemistry, Sapphire and Electron diffraction. His Photoluminescence research includes elements of Quantum-confined Stark effect, Nanostructure, Band gap, Wide-bandgap semiconductor and Ultraviolet. His studies in Condensed matter physics integrate themes in fields like Oscillator strength and Aluminium.
His primary areas of study are Optoelectronics, Molecular beam epitaxy, Quantum dot, Light-emitting diode and Photoluminescence. His studies deal with areas such as Quantum well and Optics as well as Optoelectronics. His work deals with themes such as Diode and Epitaxy, which intersect with Quantum well.
The Molecular beam epitaxy study combines topics in areas such as Crystal growth, Exciton, Heterojunction, Sapphire and Electron diffraction. Photoluminescence is frequently linked to Condensed matter physics in his study. His work on Polariton as part of general Condensed matter physics research is frequently linked to Planar, bridging the gap between disciplines.
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Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.
Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies.
Physical Review B (1998)
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio.
Applied Physics Letters (2001)
Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures.
M. Gurioli;A. Vinattieri;M. Colocci;C. Deparis.
Physical Review B (1991)
Barrier-width dependence of group-III nitrides quantum-well transition energies
Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil.
Physical Review B (1999)
Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
F. Semond;Y. Cordier;N. Grandjean;F. Natali.
Physica Status Solidi (a) (2001)
Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆
N. Grandjean;J. Massies.
Journal of Crystal Growth (1993)
DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS
N. Grandjean;J. Massies;V. H. Etgens.
Physical Review Letters (1992)
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu.
Physical Review B (1999)
Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells
Benjamin Damilano;Nicolas Grandjean;Cyril Pernot;Jean Massies.
Japanese Journal of Applied Physics (2001)
OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS
J. Massies;N. Grandjean.
Physical Review Letters (1993)
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