Jean Massies

Research.com Recognitions

• 2022 - Research.com Materials Science in France Leader Award

Overview

Best Publications

• TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

  M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  639
  Citations

• Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

  Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  495
  Citations

• Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

  N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

  399
  Citations

• From visible to white light emission by GaN quantum dots on Si(111) substrate

  B. Damilano;N. Grandjean;F. Semond;J. Massies

  353
  Citations

• High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

  Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio

  317
  Citations

• Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures.

  M. Gurioli;A. Vinattieri;M. Colocci;C. Deparis

  301
  Citations

• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

  N. Grandjean;J. Massies;M. Leroux

  293
  Citations

• Barrier-width dependence of group-III nitrides quantum-well transition energies

  Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  266
  Citations

• Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

  Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  214
  Citations

• Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

  F. Semond;Y. Cordier;N. Grandjean;F. Natali

  206
  Citations

• Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆

  N. Grandjean;J. Massies

  198
  Citations

• DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

  N. Grandjean;J. Massies;V. H. Etgens

  188
  Citations

• Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells

  Benjamin Damilano;Nicolas Grandjean;Cyril Pernot;Jean Massies

  172
  Citations

• High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

  E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

  170
  Citations

• OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS

  J. Massies;N. Grandjean

  166
  Citations

• Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

  B. Damilano;N. Grandjean;S. Dalmasso;J. Massies

  165
  Citations

• Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

  Thierry Bretagnon;Pierre Lefebvre;Pierre Valvin;Richard Bardoux

  157
  Citations

• Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

  N. Antoine-Vincent;F. Natali;M. Mihailovic;A. Vasson

  154
  Citations

• GaN evaporation in molecular-beam epitaxy environment

  N. Grandjean;J. Massies;F. Semond;S. Yu. Karpov

  143
  Citations

• Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

  M. Mesrine;N. Grandjean;J. Massies

  140
  Citations

• High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

  F. Semond;P. Lorenzini;N. Grandjean;J. Massies

  138
  Citations