Jean Massies

Jean Massies publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jean Massies sits on this spectrum.

Jean Massies D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jean Massies sits on this spectrum.

Research.com Recognitions

• 2022 - Research.com Materials Science in France Leader Award

Overview

Best Publications

• TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

  M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  639
  Citations

• Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

  Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  495
  Citations

• Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

  N. Grandjean;B. Damilano;S. Dalmasso;M. Leroux

  399
  Citations

• From visible to white light emission by GaN quantum dots on Si(111) substrate

  B. Damilano;N. Grandjean;F. Semond;J. Massies

  353
  Citations

• High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

  Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio

  317
  Citations

• Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures.

  M. Gurioli;A. Vinattieri;M. Colocci;C. Deparis

  301
  Citations

• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

  N. Grandjean;J. Massies;M. Leroux

  293
  Citations

• Barrier-width dependence of group-III nitrides quantum-well transition energies

  Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  266
  Citations

• Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

  Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  214
  Citations

• Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

  F. Semond;Y. Cordier;N. Grandjean;F. Natali

  206
  Citations

• Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆

  N. Grandjean;J. Massies

  198
  Citations

• DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

  N. Grandjean;J. Massies;V. H. Etgens

  188
  Citations

• Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells

  Benjamin Damilano;Nicolas Grandjean;Cyril Pernot;Jean Massies

  172
  Citations

• High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

  E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

  170
  Citations

• OSCILLATION OF THE LATTICE-RELAXATION IN LAYER-BY-LAYER EPITAXIAL-GROWTH OF HIGHLY STRAINED MATERIALS

  J. Massies;N. Grandjean

  166
  Citations

• Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth

  B. Damilano;N. Grandjean;S. Dalmasso;J. Massies

  165
  Citations

• Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

  Thierry Bretagnon;Pierre Lefebvre;Pierre Valvin;Richard Bardoux

  157
  Citations

• Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

  N. Antoine-Vincent;F. Natali;M. Mihailovic;A. Vasson

  154
  Citations

• GaN evaporation in molecular-beam epitaxy environment

  N. Grandjean;J. Massies;F. Semond;S. Yu. Karpov

  143
  Citations

• Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

  M. Mesrine;N. Grandjean;J. Massies

  140
  Citations

• High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

  F. Semond;P. Lorenzini;N. Grandjean;J. Massies

  138
  Citations