World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
63
Citations
15576
World Ranking
6111
National Ranking
156

Bernard Gil publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bernard Gil sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 487 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Bernard Gil D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bernard Gil sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Bernard Gil is affiliated with the University of Montpellier in France. Their research primarily focuses on the field of Materials Science, with specific emphasis on several subfields including Materials Chemistry, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Electrical and Electronic Engineering.

The scientist's work extensively spans topics such as:

  • Graphene research and applications
  • 2D Materials and Applications
  • Diamond and Carbon-based Materials Research
  • Boron and Carbon Nanomaterials Research
  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices

Recent notable publications include:

  • Single artificial atoms in silicon emitting at telecom wavelengths, 2020, Nature Electronics
  • The influence of technological changes in energy efficiency on the infrastructure deterioration in the energy sector, 2021, Energy Reports
  • Fossil Energy in the Framework of Sustainable Development: Analysis of Prospects and Development of Forecast Scenarios, 2021, Energies
  • Decoherence of VB spin defects in monoisotopic hexagonal boron nitride, 2022, PubMed
  • Band gap measurements of monolayer h-BN and insights into carbon-related point defects, 2021, 2D Materials

Frequent co-authors collaborating with Bernard Gil include:

  • Guillaume Cassabois
  • James H. Edgar
  • Pierre Valvin
  • Jiahan Li
  • V. Jacques

The primary publication venues for their work are:

  • Physical Review B
  • arXiv (Cornell University)
  • ACS Nano
  • Physical Review Materials
  • Journal of Applied Physics

Best Publications

  • Hexagonal boron nitride is an indirect bandgap semiconductor

    Guillaume Cassabois;Pierre Valvin;Bernard Gil

  • Photonics with hexagonal boron nitride

    Joshua David Caldwell;Igor Aharonovich;Guillaume Cassabois;James H. Edgar

  • Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

    Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  • ZnO as a material mostly adapted for the realization of room-temperature polariton lasers

    Marian Zamfirescu;Alexey Kavokin;Bernard Gil;Guillaume Malpuech;Guillaume Malpuech

  • Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

    Bernard Gil;Olivier Briot;Roger-Louis Aulombard

  • High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

    Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio

  • Group III nitride semiconductor compounds : physics and applications

    B. Gil

  • Barrier-width dependence of group-III nitrides quantum-well transition energies

    Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  • Direct band-gap crossover in epitaxial monolayer boron nitride.

    C. Elias;P. Valvin;T. Pelini;A. Summerfield

  • Internal electric field in wurtzite Zn O ∕ Zn 0.78 Mg 0.22 O quantum wells

    Christian Morhain;Thierry Bretagnon;Pierre Lefebvre;X Tang

  • Raman determination of phonon deformation potentials in α-GaN

    F. Demangeot;J. Frandon;M.A. Renucci;O. Briot

  • Efficient single photon emission from a high-purity hexagonal boron nitride crystal

    L. J. Martinez;Thomas Pelini;V. Waselowski;J. R. Maze

  • Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

    Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  • Photon BLOCH oscillations in porous silicon optical superlattices.

    V. Agarwal;J. A. del Río;G. Malpuech;M. Zamfirescu

  • Optical properties of GaN epilayers on sapphire

    Magloire Tchounkeu;Olivier Briot;Bernard Gil;Jean Paul Alexis

  • Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

    Thierry Bretagnon;Pierre Lefebvre;Pierre Valvin;Richard Bardoux

  • Giant exciton-light coupling in ZnO quantum dots

    Bernard Gil;Alexey V. Kavokin

  • Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

    Hadis Morkoç;Roberto Cingolani;Bernard Gil

  • Polariton lasing in a hybrid bulk ZnO microcavity

    Thierry Guillet;Meletios Mexis;J. Levrat;G. Rossbach

  • Single artificial atoms in silicon emitting at telecom wavelengths

    W. Redjem;A. Durand;T. Herzig;A. Benali

  • Recombination dynamics of free and localized excitons in G a N / G a 0.93 Al 0.07 N quantum wells

    P. Lefebvre;J. Allègre;B. Gil;A. Kavokine

Frequent Co-Authors

Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Mathieu Leroux
Mathieu Leroux Centre national de la recherche scientifique, CNRS
Alexey Kavokin
Alexey Kavokin Saint Petersburg State University
Yong Chen
Yong Chen École Normale Supérieure
James H. Edgar
James H. Edgar Kansas State University
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
David J. Dunstan
David J. Dunstan Queen Mary University of London
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Vincent Jacques
Vincent Jacques University of Montpellier

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