Bernard Gil

Overview

Best Publications

• Hexagonal boron nitride is an indirect bandgap semiconductor

  Guillaume Cassabois;Pierre Valvin;Bernard Gil

  1399
  Citations

• Photonics with hexagonal boron nitride

  Joshua David Caldwell;Igor Aharonovich;Guillaume Cassabois;James H. Edgar

  861
  Citations

• Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.

  Mathieu Leroux;Nicolas Grandjean;M. Laügt;Jean Massies

  495
  Citations

• ZnO as a material mostly adapted for the realization of room-temperature polariton lasers

  Marian Zamfirescu;Alexey Kavokin;Bernard Gil;Guillaume Malpuech;Guillaume Malpuech

  451
  Citations

• Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

  Bernard Gil;Olivier Briot;Roger-Louis Aulombard

  430
  Citations

• High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

  Pierre Lefebvre;Aurélien Morel;Mathieu Gallart;Thierry Taliercio

  317
  Citations

• Group III nitride semiconductor compounds : physics and applications

  B. Gil

  267
  Citations

• Barrier-width dependence of group-III nitrides quantum-well transition energies

  Mathieu Leroux;Nicolas Grandjean;Jean Massies;Bernard Gil

  266
  Citations

• Direct band-gap crossover in epitaxial monolayer boron nitride.

  C. Elias;P. Valvin;T. Pelini;A. Summerfield

  255
  Citations

• Internal electric field in wurtzite Zn O ∕ Zn 0.78 Mg 0.22 O quantum wells

  Christian Morhain;Thierry Bretagnon;Pierre Lefebvre;X Tang

  250
  Citations

• Raman determination of phonon deformation potentials in α-GaN

  F. Demangeot;J. Frandon;M.A. Renucci;O. Briot

  249
  Citations

• Efficient single photon emission from a high-purity hexagonal boron nitride crystal

  L. J. Martinez;Thomas Pelini;V. Waselowski;J. R. Maze

  230
  Citations

• Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

  Pierre Lefebvre;Jacques Allègre;Bernard Gil;Henry Mathieu

  214
  Citations

• Photon BLOCH oscillations in porous silicon optical superlattices.

  V. Agarwal;J. A. del Río;G. Malpuech;M. Zamfirescu

  167
  Citations

• Optical properties of GaN epilayers on sapphire

  Magloire Tchounkeu;Olivier Briot;Bernard Gil;Jean Paul Alexis

  166
  Citations

• Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots

  Thierry Bretagnon;Pierre Lefebvre;Pierre Valvin;Richard Bardoux

  157
  Citations

• Giant exciton-light coupling in ZnO quantum dots

  Bernard Gil;Alexey V. Kavokin

  154
  Citations

• Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

  Hadis Morkoç;Roberto Cingolani;Bernard Gil

  154
  Citations

• Polariton lasing in a hybrid bulk ZnO microcavity

  Thierry Guillet;Meletios Mexis;J. Levrat;G. Rossbach

  149
  Citations

• Single artificial atoms in silicon emitting at telecom wavelengths

  W. Redjem;A. Durand;T. Herzig;A. Benali

  142
  Citations

• Recombination dynamics of free and localized excitons in G a N / G a 0.93 Al 0.07 N quantum wells

  P. Lefebvre;J. Allègre;B. Gil;A. Kavokine

  136
  Citations