D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 67 Citations 24,392 520 World Ranking 2124 National Ranking 92

Research.com Recognitions

Awards & Achievements

2011 - Fellow of the Royal Society, United Kingdom

1996 - Fellow of the Royal Academy of Engineering (UK)

1991 - Member of Academia Europaea

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of study are Condensed matter physics, Wide-bandgap semiconductor, Optoelectronics, Transmission electron microscopy and Quantum well. Colin J. Humphreys has researched Condensed matter physics in several fields, including Electron, Diffraction, Optics and Epitaxy. His Electron research incorporates themes from Inelastic scattering, Channelling, Molecular physics, Atomic physics and Crystal.

The concepts of his Molecular physics study are interwoven with issues in Scanning transmission electron microscopy and Electron spectroscopy. His Wide-bandgap semiconductor research includes themes of Semiconductor and Photoluminescence. His Optoelectronics study incorporates themes from Biasing and Stacking.

His most cited work include:

  • Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study (6355 citations)
  • Solid-State Lighting (245 citations)
  • Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope (235 citations)

What are the main themes of his work throughout his whole career to date?

Colin J. Humphreys spends much of his time researching Optoelectronics, Quantum well, Condensed matter physics, Photoluminescence and Transmission electron microscopy. His Optoelectronics study combines topics from a wide range of disciplines, such as Sapphire and Metalorganic vapour phase epitaxy, Epitaxy. While the research belongs to areas of Quantum well, Colin J. Humphreys spends his time largely on the problem of Electron, intersecting his research to questions surrounding Atomic physics.

His Condensed matter physics study integrates concerns from other disciplines, such as Scanning transmission electron microscopy and Electric field. His studies deal with areas such as Quantum dot, Spectroscopy, Luminescence and Quantum efficiency as well as Photoluminescence. His work carried out in the field of Transmission electron microscopy brings together such families of science as Microstructure and Diffraction.

He most often published in these fields:

  • Optoelectronics (39.18%)
  • Quantum well (24.49%)
  • Condensed matter physics (21.36%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (39.18%)
  • Quantum well (24.49%)
  • Condensed matter physics (21.36%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Quantum well, Condensed matter physics, Photoluminescence and Light-emitting diode. His Optoelectronics study combines topics in areas such as Transistor, Gallium nitride and Epitaxy. His studies in Quantum well integrate themes in fields like Indium, Spectroscopy, Molecular physics, Electron and Quantum efficiency.

The Condensed matter physics study combines topics in areas such as Cathodoluminescence, Transmission electron microscopy and Graphene. Colin J. Humphreys has included themes like Sapphire, Scanning electron microscope and Analytical chemistry in his Transmission electron microscopy study. His research investigates the connection between Light-emitting diode and topics such as Nanorod that intersect with problems in Metalorganic vapour phase epitaxy.

Between 2015 and 2021, his most popular works were:

  • Machine Learning Predicts Laboratory Earthquakes (133 citations)
  • The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells (51 citations)
  • Carrier localization in the vicinity of dislocations in InGaN (31 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Colin J. Humphreys mainly focuses on Optoelectronics, Quantum well, Condensed matter physics, Transmission electron microscopy and Light-emitting diode. His Optoelectronics research is multidisciplinary, incorporating perspectives in Sapphire, Gallium nitride, Nanorod and Epitaxy. His Quantum well research incorporates themes from Exciton, Molecular physics, Electron, Photoluminescence and Polar.

His Molecular physics research is multidisciplinary, incorporating perspectives in Wide-bandgap semiconductor and Excitation. The concepts of his Condensed matter physics study are interwoven with issues in Indium, Raman spectroscopy and Terahertz radiation. His Transmission electron microscopy research includes elements of Metalorganic vapour phase epitaxy, Wafer, Chemical vapor deposition, Cathodoluminescence and Dislocation.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study

S. L. Dudarev;G. A. Botton;S. Y. Savrasov;C. J. Humphreys.
Physical Review B (1998)

8792 Citations

Solid-State Lighting

Colin J. Humphreys.
Mrs Bulletin (2008)

411 Citations

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers.
Applied Physics Letters (2003)

333 Citations

The scattering of fast electrons by crystals

C J Humphreys.
Reports on Progress in Physics (1979)

297 Citations

Prospects of III-nitride optoelectronics grown on Si.

D Zhu;D J Wallis;C J Humphreys.
Reports on Progress in Physics (2013)

293 Citations

Absorption parameters in electron diffraction theory

C. J. Humphreys;P. B. Hirsch.
Philosophical Magazine (1968)

291 Citations

Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama.
Journal of Applied Physics (2002)

252 Citations

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey.
Journal of Applied Physics (2005)

243 Citations

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys.
Applied Physics Letters (2007)

226 Citations

Critical thickness calculations for InGaN/GaN

D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys.
Journal of Crystal Growth (2007)

216 Citations

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Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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