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Materials Science
UK
2022

D-Index & Metrics

Materials Science

D-Index
78
Citations
35443
World Ranking
2900
National Ranking
122

Colin J. Humphreys publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Colin J. Humphreys sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 722 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Colin J. Humphreys D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Colin J. Humphreys sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 78 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Materials Science in United Kingdom Leader Award
  • 2011 - Fellow of the Royal Society, United Kingdom
  • 1996 - Fellow of the Royal Academy of Engineering (UK)
  • 1991 - Member of Academia Europaea

Overview

Colin J. Humphreys is affiliated with Queen Mary University of London in the United Kingdom and works primarily in the fields of engineering and materials science. Their research spans subfields such as materials chemistry, electrical and electronic engineering, mechanical engineering, biomedical engineering, and condensed matter physics.

The scientist has contributed notably to research topics including:

  • Graphene research and applications
  • Carbon nanotubes in composites
  • Semiconductor materials and devices
  • Advancements in battery materials
  • GaN-based semiconductor devices and materials
  • Perovskite materials and applications
  • Quantum dots synthesis and properties

Recent publication venues for Colin J. Humphreys include Physical Review B, Advanced Optical Materials, Applied Physics Reviews, ACS Nano, and Scientific Reports. Their frequent co-authors include Oliver Fenwick, Yiwei Sun, D. J. Dunstan, Ivor Guiney, and David Holec.

Selected recent papers exemplify the scope of their work:

  • Mechanical properties of graphene, 2021, Applied Physics Reviews
  • Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films, 2020, ACS Nano
  • Wafer-Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light-Emitting Diodes, 2021, Advanced Optical Materials
  • Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers, 2020, Physical Review B
  • Nanomechanics of graphene oxide-bacteriophage based self-assembled porous composites, 2020, Scientific Reports

Colin J. Humphreys has been recognized with several distinctions, including election as a Fellow of the Royal Society in the United Kingdom in 2011 and as a Fellow of the Royal Academy of Engineering (UK) in 1996. They have also been a member of Academia Europaea since 1991.

Best Publications

  • Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study

    S. L. Dudarev;G. A. Botton;S. Y. Savrasov;C. J. Humphreys

  • Solid-State Lighting

    Colin J. Humphreys

  • Prospects of III-nitride optoelectronics grown on Si.

    D Zhu;D J Wallis;C J Humphreys

  • Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

    T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers

  • The scattering of fast electrons by crystals

    C J Humphreys

  • Absorption parameters in electron diffraction theory

    C. J. Humphreys;P. B. Hirsch

  • Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

    D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey

  • Critical thickness calculations for InGaN/GaN

    D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys

  • Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

    A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama

  • Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

    Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  • Machine Learning Predicts Laboratory Earthquakes

    Bertrand Rouet‐LeDuc;Bertrand Rouet‐LeDuc;Claudia L. Hulbert;Nicholas Lubbers;Nicholas Lubbers;Kipton M. Barros

  • Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

    Alex N Bright;Paul J Thomas;Matthew Weyland;Dave M Tricker

  • Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

    D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver

  • Dislocation nucleation near the critical thickness in GeSi/Si strained layers

    D. J. Eaglesham;E. P. Kvam;D. M. Maher;C. J. Humphreys

  • Chemical mapping and formation of V-defects in InGaN multiple quantum wells

    Nikhil Sharma;Paul Thomas;David Tricker;Colin Humphreys

  • Dopant profiling with the scanning electron microscope—A study of Si

    S. L. Elliott;R. F. Broom;C. J. Humphreys

  • Understanding x-ray diffraction of nonpolar gallium nitride films

    M. A. Moram;C. F. Johnston;J. L. Hollander;M. J. Kappers

  • InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

    Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys

  • A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons

    J. P. Spencer;C. J. Humphreys;P. B. Hirsch

  • Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

    Iestyn Pope;Peter Michael Smowton;Peter Blood;John Duncan Thomson

  • Mechanical properties of graphene

    Y Sun;D Papageorgiou;C Humphreys;D Dunstan

Frequent Co-Authors

Menno J. Kappers
Menno J. Kappers University of Cambridge
Rachel A. Oliver
Rachel A. Oliver University of Cambridge
Paul D. Brown
Paul D. Brown Mayo Clinic
Robert A. Taylor
Robert A. Taylor University of New South Wales
Gianluigi A. Botton
Gianluigi A. Botton McMaster University
Rafal E. Dunin-Borkowski
Rafal E. Dunin-Borkowski Forschungszentrum Jülich
Enrico Zanoni
Enrico Zanoni University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
Martin D. Dawson
Martin D. Dawson University of Strathclyde
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua

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