2011 - Fellow of the Royal Society, United Kingdom
1996 - Fellow of the Royal Academy of Engineering (UK)
1991 - Member of Academia Europaea
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
S. L. Dudarev;G. A. Botton;S. Y. Savrasov;C. J. Humphreys.
Physical Review B (1998)
Colin J. Humphreys.
Mrs Bulletin (2008)
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers.
Applied Physics Letters (2003)
Prospects of III-nitride optoelectronics grown on Si.
D Zhu;D J Wallis;C J Humphreys.
Reports on Progress in Physics (2013)
The scattering of fast electrons by crystals
C J Humphreys.
Reports on Progress in Physics (1979)
Absorption parameters in electron diffraction theory
C. J. Humphreys;P. B. Hirsch.
Philosophical Magazine (1968)
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey.
Journal of Applied Physics (2005)
Machine Learning Predicts Laboratory Earthquakes
Bertrand Rouet‐LeDuc;Bertrand Rouet‐LeDuc;Claudia L. Hulbert;Nicholas Lubbers;Nicholas Lubbers;Kipton M. Barros.
Geophysical Research Letters (2017)
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama.
Journal of Applied Physics (2002)
Critical thickness calculations for InGaN/GaN
D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys.
Journal of Crystal Growth (2007)
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