Colin J. Humphreys

Research.com Recognitions

• 2022 - Research.com Materials Science in United Kingdom Leader Award
• 2011 - Fellow of the Royal Society, United Kingdom
• 1996 - Fellow of the Royal Academy of Engineering (UK)
• 1991 - Member of Academia Europaea

Overview

Best Publications

• Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study

  S. L. Dudarev;G. A. Botton;S. Y. Savrasov;C. J. Humphreys

  15422
  Citations

• Solid-State Lighting

  Colin J. Humphreys

  476
  Citations

• Prospects of III-nitride optoelectronics grown on Si.

  D Zhu;D J Wallis;C J Humphreys

  394
  Citations

• Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

  T. M. Smeeton;M. J. Kappers;J. S. Barnard;M. E. Vickers

  349
  Citations

• The scattering of fast electrons by crystals

  C J Humphreys

  317
  Citations

• Absorption parameters in electron diffraction theory

  C. J. Humphreys;P. B. Hirsch

  298
  Citations

• Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

  D. M. Graham;A. Soltani-Vala;P. Dawson;M. J. Godfrey

  279
  Citations

• Critical thickness calculations for InGaN/GaN

  D. Holec;Pedro Da Costa;M. J. Kappers;C. J. Humphreys

  270
  Citations

• Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

  A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama

  253
  Citations

• Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

  Mark J. Galtrey;Rachel A. Oliver;Menno J. Kappers;Colin J. Humphreys

  236
  Citations

• Machine Learning Predicts Laboratory Earthquakes

  Bertrand Rouet‐LeDuc;Bertrand Rouet‐LeDuc;Claudia L. Hulbert;Nicholas Lubbers;Nicholas Lubbers;Kipton M. Barros

  233
  Citations

• Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

  Alex N Bright;Paul J Thomas;Matthew Weyland;Dave M Tricker

  227
  Citations

• Carrier localization mechanisms in InxGa1?xN/GaN quantum wells

  D. Watson-Parris;M. J. Godfrey;P. Dawson;R. A. Oliver

  219
  Citations

• Dislocation nucleation near the critical thickness in GeSi/Si strained layers

  D. J. Eaglesham;E. P. Kvam;D. M. Maher;C. J. Humphreys

  195
  Citations

• Chemical mapping and formation of V-defects in InGaN multiple quantum wells

  Nikhil Sharma;Paul Thomas;David Tricker;Colin Humphreys

  186
  Citations

• Dopant profiling with the scanning electron microscope—A study of Si

  S. L. Elliott;R. F. Broom;C. J. Humphreys

  181
  Citations

• Understanding x-ray diffraction of nonpolar gallium nitride films

  M. A. Moram;C. F. Johnston;J. L. Hollander;M. J. Kappers

  181
  Citations

• InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

  Rachel A. Oliver;G. Andrew D. Briggs;Menno J. Kappers;Colin J. Humphreys

  177
  Citations

• A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons

  J. P. Spencer;C. J. Humphreys;P. B. Hirsch

  162
  Citations

• Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

  Iestyn Pope;Peter Michael Smowton;Peter Blood;John Duncan Thomson

  155
  Citations

• Mechanical properties of graphene

  Y Sun;D Papageorgiou;C Humphreys;D Dunstan

  139
  Citations