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Matteo Meneghini

Matteo Meneghini

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
17679
World Ranking
1506
National Ranking
30

Overview

Matteo Meneghini is affiliated with the University of Padua in Italy. Their research primarily spans the fields of Engineering and Physics and Astronomy, with significant contributions in Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics. Meneghini's work encompasses a broad range of topics within semiconductor research.

The main areas of study for Meneghini include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • ZnO doping and properties

Matteo Meneghini has published extensively in various scientific journals. Their frequent publication venues include:

  • Microelectronics Reliability
  • IEEE Transactions on Electron Devices
  • Journal of Physics D Applied Physics
  • Journal of Applied Physics
  • Applied Physics Letters

Some of Meneghini's recent notable papers are:

  • GaN-based power devices: Physics, reliability, and perspectives (2021), Journal of Applied Physics
  • The 2020 UV emitter roadmap (2020), Journal of Physics D Applied Physics
  • Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024), IEEE Transactions on Electron Devices
  • Defects and Reliability of GaN-Based LEDs: Review and Perspectives (2022), physica status solidi (a)
  • Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives (2020), Journal of Applied Physics

Meneghini collaborates frequently with other researchers in the field. The most frequent co-authors include:

  • Gaudenzio Meneghesso
  • Enrico Zanoni
  • Carlo De Santi
  • Matteo Buffolo
  • Alessandro Caria

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

    G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

    Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

    M. Meneghini;A. Tazzoli;G. Mura;G. Meneghesso

  • A Review on the Reliability of GaN-Based LEDs

    M. Meneghini;L.-R. Trevisanello;G. Meneghesso;E. Zanoni

  • Accelerated Life Test of High Brightness Light Emitting Diodes

    L. Trevisanello;M. Meneghini;G. Mura;M. Vanzi

  • Power GaN Devices

    Matteo Meneghini;Gaudenzio Meneghesso;Enrico Zanoni

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

    M. Meneghini;N. Ronchi;A. Stocco;G. Meneghesso

  • Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

    Isabella Rossetto;Matteo Meneghini;Oliver Hilt;Eldad Bahat-Treidel

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

    Matteo Meneghini;Nicola Trivellin;Gaudenzio Meneghesso;Enrico Zanoni

  • Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

    Matteo Meneghini;Oliver Hilt;Joachim Wuerfl;Gaudenzio Meneghesso

  • Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

    Gaudenzio Meneghesso;Matteo Meneghini;Enrico Zanoni

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • Reliability issues of Gallium Nitride High Electron Mobility Transistors

    Gaudenzio Meneghesso;Matteo Meneghini;Augusto Tazzoli;Nicolo' Ronchi

  • Recent results on the degradation of white LEDs for lighting

    G Meneghesso;M Meneghini;E Zanoni

Frequent Co-Authors

Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Steve Stoffels
Steve Stoffels Aluvia Photonics
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Michael J. Uren
Michael J. Uren University of Bristol
Giovanni Ghione
Giovanni Ghione Polytechnic University of Turin
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London

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