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Electronics and Electrical Engineering

D-Index
34
Citations
5956
World Ranking
5730
National Ranking
242

Overview

Alessandro Chini is affiliated with the University of Modena and Reggio Emilia in Italy. Their research primarily focuses on semiconductor devices and materials, with significant contributions to the fields of Physics and Astronomy as well as Engineering.

Chini's research spans multiple subfields, including:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Their main research topics cover:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design

Alessandro Chini has published multiple papers, including recent ones such as:

  • GaN-based power devices: Physics, reliability, and perspectives (2021), Journal of Applied Physics
  • "Hole Redistribution" Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs (2021), IEEE Transactions on Electron Devices
  • Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs (2021), IEEE Transactions on Electron Devices
  • Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs (2021), IEEE Transactions on Electron Devices
  • Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability (2023), IEEE Transactions on Electron Devices

Frequent co-authors contributing to their publications include:

  • Marcello Cioni
  • Nicolò Zagni
  • G. Verzellesi
  • Ferdinando Iucolano
  • Maria Eloisa Castagna

Chini's work is regularly published in venues such as:

  • IEEE Transactions on Electron Devices
  • Micromachines
  • IEEE Electron Device Letters
  • IEEE Transactions on Device and Materials Reliability
  • Electronic Materials

Best Publications

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

    G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  • High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

    L. Shen;R. Coffie;D. Buttari;S. Heikman

  • Reliability issues of Gallium Nitride High Electron Mobility Transistors

    Gaudenzio Meneghesso;Matteo Meneghini;Augusto Tazzoli;Nicolo' Ronchi

  • Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

    M. Faqir;G. Verzellesi;A. Chini;F. Fantini

  • Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

    A. Chini;D. Buttari;R. Coffie;L. Shen

  • 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

    Alessandro Chini;D. Buttari;R. Coffie;S. Heikman

  • Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

    T. Palacios;A. Chini;D. Buttari;S. Heikman

  • Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

    Alessandro Chini;Gaudenzio Meneghesso;Matteo Meneghini;Fausto Fantini

  • Manufacture of single or multiple gate field plate

    Cheaney Alessandro;Primit Parikh;K Mishra Umesh;Wu Xifeng

  • Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

    D. Buttari;A. Chini;G. Meneghesso;E. Zanoni

  • A C-band high-dynamic range GaN HEMT low-noise amplifier

    Hongtao Xu;C. Sanabria;A. Chini;S. Keller

  • SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

    D Buttari;Alessandro Chini;A. Chakraborty;L. Mccarthy

  • Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

    A. Chini;V. Di Lecce;M. Esposto;G. Meneghesso

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Enrico Zanoni
Enrico Zanoni University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Matteo Meneghini
Matteo Meneghini University of Padua
Sarah L. Keller
Sarah L. Keller University of Washington
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia

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