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Alessandro Chini

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 34 5730 5501 242 238 210 5956

Alessandro Chini publications per year

The chart shows the history of publications by Alessandro Chini between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Alessandro Chini published across 26 years, from 2000 to 2025, averaging 8.5 papers a year. Output peaked at 18 publications in 2004. 16 of the 222 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2004. 2000: 4 publications 2001: 7 publications 2002: 10 publications 2003: 12 publications 2004: 18 publications 2005: 10 publications 2006: 12 publications 2007: 6 publications 2008: 8 publications 2009: 13 publications 2010: 13 publications 2011: 8 publications 2012: 10 publications 2013: 12 publications 2014: 9 publications 2015: 2 publications 2016: 7 publications 2017: 3 publications 2018: 5 publications 2019: 2 publications 2020: 5 publications 2021: 12 publications 2022: 7 publications 2023: 11 publications 2024: 7 publications 2025: 9 publications
2000 2025

222 publications in total across all disciplines

View publications per year as a table
Alessandro Chini: publications per year, 2000 to 2025
Year Publications
2000 4
2001 7
2002 10
2003 12
2004 18
2005 10
2006 12
2007 6
2008 8
2009 13
2010 13
2011 8
2012 10
2013 12
2014 9
2015 2
2016 7
2017 3
2018 5
2019 2
2020 5
2021 12
2022 7
2023 11
2024 7
2025 9
Total 222
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Alessandro Chini publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Alessandro Chini sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 194–213 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 210 publications — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430 210
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Alessandro Chini D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Alessandro Chini sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 34 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244 34
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Alessandro Chini is affiliated with the University of Modena and Reggio Emilia in Italy. Their research primarily focuses on semiconductor devices and materials, with significant contributions to the fields of Physics and Astronomy as well as Engineering.

Chini's research spans multiple subfields, including:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Their main research topics cover:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design

Alessandro Chini has published multiple papers, including recent ones such as:

  • GaN-based power devices: Physics, reliability, and perspectives (2021), Journal of Applied Physics
  • "Hole Redistribution" Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs (2021), IEEE Transactions on Electron Devices
  • Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs (2021), IEEE Transactions on Electron Devices
  • Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs (2021), IEEE Transactions on Electron Devices
  • Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability (2023), IEEE Transactions on Electron Devices

Frequent co-authors contributing to their publications include:

  • Marcello Cioni
  • Nicolò Zagni
  • G. Verzellesi
  • Ferdinando Iucolano
  • Maria Eloisa Castagna

Chini's work is regularly published in venues such as:

  • IEEE Transactions on Electron Devices
  • Micromachines
  • IEEE Electron Device Letters
  • IEEE Transactions on Device and Materials Reliability
  • Electronic Materials

Best Publications

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

    G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  • High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

    L. Shen;R. Coffie;D. Buttari;S. Heikman

  • Reliability issues of Gallium Nitride High Electron Mobility Transistors

    Gaudenzio Meneghesso;Matteo Meneghini;Augusto Tazzoli;Nicolo' Ronchi

  • Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

    M. Faqir;G. Verzellesi;A. Chini;F. Fantini

  • Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

    A. Chini;D. Buttari;R. Coffie;L. Shen

  • 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

    Alessandro Chini;D. Buttari;R. Coffie;S. Heikman

  • Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

    T. Palacios;A. Chini;D. Buttari;S. Heikman

  • Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

    Alessandro Chini;Gaudenzio Meneghesso;Matteo Meneghini;Fausto Fantini

  • Manufacture of single or multiple gate field plate

    Cheaney Alessandro;Primit Parikh;K Mishra Umesh;Wu Xifeng

  • Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

    D. Buttari;A. Chini;G. Meneghesso;E. Zanoni

  • A C-band high-dynamic range GaN HEMT low-noise amplifier

    Hongtao Xu;C. Sanabria;A. Chini;S. Keller

  • SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES

    D Buttari;Alessandro Chini;A. Chakraborty;L. Mccarthy

  • Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

    A. Chini;V. Di Lecce;M. Esposto;G. Meneghesso

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Enrico Zanoni
Enrico Zanoni University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Matteo Meneghini
Matteo Meneghini University of Padua
Sten Heikman
Sten Heikman Cree
Sarah L. Keller
Sarah L. Keller University of Washington
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Paolo Pavan
Paolo Pavan University of Modena and Reggio Emilia

External Links

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Related Online Degrees & Career Pathways

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Best Scientists Citing Alessandro Chini

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 159

Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua

Publications: 118

Enrico Zanoni

Enrico Zanoni

University of Padua

Publications: 114

Matteo Meneghini

Matteo Meneghini

University of Padua

Publications: 96

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 77

Stacia Keller

Stacia Keller

University of California, Santa Barbara

Publications: 69

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 48

Martin Kuball

Martin Kuball

University of Bristol

Publications: 45

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 42

Siddharth Rajan

Siddharth Rajan

The Ohio State University

Publications: 42

Michael J. Uren

Michael J. Uren

University of Bristol

Publications: 39

Tomas Palacios

Tomas Palacios

MIT

Publications: 38

Fan Ren

Fan Ren

University of Florida

Publications: 38

Sarah L. Keller

Sarah L. Keller

University of Washington

Publications: 38

Yue Hao

Yue Hao

Xidian University

Publications: 33

Yifeng Wu

Yifeng Wu

Transphorm Inc.

Publications: 31

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