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Siddharth Rajan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 77 628 602 281 261 346 17943
Materials Science 78 3023 2918 842 790 348 19047

Siddharth Rajan publications per year

The chart shows the history of publications by Siddharth Rajan between 1968 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Siddharth Rajan published across 58 years, from 1968 to 2025, averaging 7.1 papers a year. Output peaked at 35 publications in 2020. 43 of the 413 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1968 to 2025. Vertical axis: number of publications, 0 to 35. Peak 35 publications in 2020. 1968: 1 publication 1969: 0 publications 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 0 publications 1985: 0 publications 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 0 publications 1990: 0 publications 1991: 0 publications 1992: 0 publications 1993: 0 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 8 publications 2005: 8 publications 2006: 8 publications 2007: 5 publications 2008: 16 publications 2009: 4 publications 2010: 11 publications 2011: 17 publications 2012: 18 publications 2013: 28 publications 2014: 24 publications 2015: 19 publications 2016: 27 publications 2017: 18 publications 2018: 28 publications 2019: 31 publications 2020: 35 publications 2021: 23 publications 2022: 18 publications 2023: 23 publications 2024: 23 publications 2025: 20 publications
1968 2025

413 publications in total across all disciplines

View publications per year as a table
Siddharth Rajan: publications per year, 1968 to 2025
Year Publications
1968 1
1969 0
1970 0
1971 0
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 0
1981 0
1982 0
1983 0
1984 0
1985 0
1986 0
1987 0
1988 0
1989 0
1990 0
1991 0
1992 0
1993 0
1994 0
1995 0
1996 0
1997 0
1998 0
1999 0
2000 0
2001 0
2002 0
2003 0
2004 8
2005 8
2006 8
2007 5
2008 16
2009 4
2010 11
2011 17
2012 18
2013 28
2014 24
2015 19
2016 27
2017 18
2018 28
2019 31
2020 35
2021 23
2022 18
2023 23
2024 23
2025 20
Total 413
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Siddharth Rajan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Siddharth Rajan sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 346 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 346
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Siddharth Rajan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Siddharth Rajan sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 77 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 77 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35 77
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Siddharth Rajan is affiliated with The Ohio State University in the United States. Their research spans multiple aspects of materials science, engineering, and physics, with a focus on semiconductor materials and electronic device applications. They have contributed extensively to fields such as electrical and electronic engineering, electronic, optical and magnetic materials, materials chemistry, condensed matter physics, and renewable energy and sustainability.

Their recent publications reveal a concentration on gallium oxide (Ga2O3) and related semiconductor materials. Notable papers include:

  • "The 2020 UV emitter roadmap," 2020, published in Journal of Physics D Applied Physics
  • "β-Gallium oxide power electronics," 2022, published in APL Materials
  • "Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3," 2020, published in physica status solidi (RRL) - Rapid Research Letters
  • "High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer," 2020, published in Journal of Applied Physics
  • "β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm," 2021, published in IEEE Electron Device Letters

The research topics that Dr. Rajan covers include:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

They frequently collaborate with several coauthors who are active in similar research domains. Frequent coauthors include Nidhin Kurian Kalarickal, Chandan Joishi, Zhanbo Xia, Sheikh Ifatur Rahman, and Jinwoo Hwang.

Their publications often appear in specialized venues, indicating a focused engagement with advanced semiconductor and materials research. These venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Journal of Applied Physics
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices

The breadth of their work covers main fields such as materials science (123 publications), engineering (85 publications), and physics and astronomy (69 publications). Subfields emphasize electrical and electronic engineering, electronic, optical, and magnetic materials, materials chemistry, and condensed matter physics. Together, these reflect a research focus supporting semiconductor technology development and characterization.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

    Dante J O'Hara;Tiancong Zhu;Amanda H Trout;Adam S Ahmed

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • β-Gallium oxide power electronics

    Unknown

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • p-type doping of MoS2 thin films using Nb

    Masihhur R. Laskar;Digbijoy N. Nath;Lu Ma;Edwin W. Lee

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

    Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Large Area Single Crystal (0001) Oriented MoS2 Thin Films

    Masihhur R. Laskar;Lu Ma;ShanthaKumar K;Pil Sung Park

  • High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

    Anamika Singh Pratiyush;Sriram Krishnamoorthy;Swanand Vishnu Solanke;Zhanbo Xia

  • Polarity governs atomic interaction through two-dimensional materials

    Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Large area single crystal (0001) oriented MoS2

    Masihhur R. Laskar;Lu Ma;Santhakumar Kannappan;Pil Sung Park

  • Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

    C. Poblenz;P. Waltereit;S. Rajan;S. Heikman

  • Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    Michele Esposto;Sriram Krishnamoorthy;Digbijoy N. Nath;Sanyam Bajaj

  • Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

    T. Palacios;S. Rajan;A. Chakraborty;S. Heikman

  • Polarization-engineered GaN/InGaN/GaN tunnel diodes

    Sriram Krishnamoorthy;Digbijoy N. Nath;Fatih Akyol;Pil Sung Park

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Digbijoy N. Nath
Digbijoy N. Nath Indian Institute of Science
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Wu Lu
Wu Lu The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories

External Links

Personal website of Siddharth Rajan Google Scholar page

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Best Scientists Citing Siddharth Rajan

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Publications: 178

James S. Speck

James S. Speck

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Publications: 176

Steven P. DenBaars

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University of California, Santa Barbara

Publications: 87

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Stacia Keller

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Publications: 85

Debdeep Jena

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Publications: 75

Yue Hao

Yue Hao

Xidian University

Publications: 75

Fan Ren

Fan Ren

University of Florida

Publications: 62

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 60

Susanne Stemmer

Susanne Stemmer

University of California, Santa Barbara

Publications: 59

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 57

Tomas Palacios

Tomas Palacios

MIT

Publications: 55

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 52

Huili Grace Xing

Huili Grace Xing

Cornell University

Publications: 45

Man Hoi Wong

Man Hoi Wong

Hong Kong University of Science and Technology

Publications: 39

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