World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
17943
World Ranking
628
National Ranking
280

Materials Science

D-Index
78
Citations
19047
World Ranking
3025
National Ranking
844

Overview

Siddharth Rajan is affiliated with The Ohio State University in the United States. Their research spans multiple aspects of materials science, engineering, and physics, with a focus on semiconductor materials and electronic device applications. They have contributed extensively to fields such as electrical and electronic engineering, electronic, optical and magnetic materials, materials chemistry, condensed matter physics, and renewable energy and sustainability.

Their recent publications reveal a concentration on gallium oxide (Ga2O3) and related semiconductor materials. Notable papers include:

  • "The 2020 UV emitter roadmap," 2020, published in Journal of Physics D Applied Physics
  • "β-Gallium oxide power electronics," 2022, published in APL Materials
  • "Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3," 2020, published in physica status solidi (RRL) - Rapid Research Letters
  • "High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer," 2020, published in Journal of Applied Physics
  • "β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm," 2021, published in IEEE Electron Device Letters

The research topics that Dr. Rajan covers include:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

They frequently collaborate with several coauthors who are active in similar research domains. Frequent coauthors include Nidhin Kurian Kalarickal, Chandan Joishi, Zhanbo Xia, Sheikh Ifatur Rahman, and Jinwoo Hwang.

Their publications often appear in specialized venues, indicating a focused engagement with advanced semiconductor and materials research. These venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Journal of Applied Physics
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices

The breadth of their work covers main fields such as materials science (123 publications), engineering (85 publications), and physics and astronomy (69 publications). Subfields emphasize electrical and electronic engineering, electronic, optical, and magnetic materials, materials chemistry, and condensed matter physics. Together, these reflect a research focus supporting semiconductor technology development and characterization.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

    Dante J O'Hara;Tiancong Zhu;Amanda H Trout;Adam S Ahmed

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • β-Gallium oxide power electronics

    Unknown

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • p-type doping of MoS2 thin films using Nb

    Masihhur R. Laskar;Digbijoy N. Nath;Lu Ma;Edwin W. Lee

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

    Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Large Area Single Crystal (0001) Oriented MoS2 Thin Films

    Masihhur R. Laskar;Lu Ma;ShanthaKumar K;Pil Sung Park

  • High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

    Anamika Singh Pratiyush;Sriram Krishnamoorthy;Swanand Vishnu Solanke;Zhanbo Xia

  • Polarity governs atomic interaction through two-dimensional materials

    Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Large area single crystal (0001) oriented MoS2

    Masihhur R. Laskar;Lu Ma;Santhakumar Kannappan;Pil Sung Park

  • Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

    C. Poblenz;P. Waltereit;S. Rajan;S. Heikman

  • Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    Michele Esposto;Sriram Krishnamoorthy;Digbijoy N. Nath;Sanyam Bajaj

  • Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

    T. Palacios;S. Rajan;A. Chakraborty;S. Heikman

  • Polarization-engineered GaN/InGaN/GaN tunnel diodes

    Sriram Krishnamoorthy;Digbijoy N. Nath;Fatih Akyol;Pil Sung Park

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Digbijoy N. Nath
Digbijoy N. Nath Indian Institute of Science
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Wu Lu
Wu Lu The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories

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