The scientist’s investigation covers issues in Optoelectronics, Molecular beam epitaxy, Wide-bandgap semiconductor, Transistor and Doping. His research integrates issues of Field-effect transistor, Gallium nitride and Transconductance in his study of Optoelectronics. He interconnects Quantum tunnelling, Light-emitting diode, Electrical resistivity and conductivity and Electronic band structure in the investigation of issues within Wide-bandgap semiconductor.
His Transistor research incorporates themes from Nanotechnology and Electronics. His Doping study combines topics in areas such as Fermi gas and Silicon. The study incorporates disciplines such as Semiconductor device, Electron mobility and Chemical vapor deposition in addition to Heterojunction.
His primary areas of investigation include Optoelectronics, Transistor, Wide-bandgap semiconductor, Heterojunction and Doping. The concepts of his Optoelectronics study are interwoven with issues in Field-effect transistor and Gallium nitride. In his study, Analytical chemistry is inextricably linked to Molecular beam epitaxy, which falls within the broad field of Transistor.
His biological study spans a wide range of topics, including Electron mobility, Electrical resistivity and conductivity and Contact resistance. Siddharth Rajan usually deals with Heterojunction and limits it to topics linked to Semiconductor and Dielectric. Siddharth Rajan combines subjects such as Electronic engineering and Power density with his study of High-electron-mobility transistor.
Optoelectronics, Band gap, Transistor, Heterojunction and Doping are his primary areas of study. His studies in Optoelectronics integrate themes in fields like Field-effect transistor and Breakdown voltage. He studied Band gap and Exciton that intersect with Photon energy and Atomic physics.
The Transistor study combines topics in areas such as Cutoff frequency, Ohmic contact and Wide-bandgap semiconductor. His study in Heterojunction is interdisciplinary in nature, drawing from both Beta, Fermi gas, Semiconductor and Engineering physics. His Doping research is multidisciplinary, incorporating perspectives in Thin film, Electron mobility, Molecular physics and Analytical chemistry.
His main research concerns Optoelectronics, Doping, Transistor, Heterojunction and Breakdown voltage. His work on Optoelectronics is being expanded to include thematically relevant topics such as Detector. Siddharth Rajan has researched Doping in several fields, including Electron mobility, Field-effect transistor, Semiconductor, Molecular physics and Threshold voltage.
His studies link Analytical chemistry with Transistor. His Heterojunction research focuses on Cutoff frequency and how it relates to Signal, Parasitic element, Power gain, Velocity saturation and Atomic physics. His Breakdown voltage research is multidisciplinary, incorporating elements of Transconductance, Chemical vapor deposition and Logic gate.
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Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena.
Advanced electronic materials (2018)
High-power AlGaN/GaN HEMTs for Ka-band applications
T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz.
IEEE Electron Device Letters (2005)
Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Dante J O'Hara;Tiancong Zhu;Amanda H Trout;Adam S Ahmed.
Nano Letters (2018)
p-type doping of MoS2 thin films using Nb
Masihhur R. Laskar;Digbijoy N. Nath;Lu Ma;Edwin W. Lee.
Applied Physics Letters (2014)
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang.
Applied Physics Letters (2011)
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar;Lu Ma;ShanthaKumar K;Pil Sung Park.
arXiv: Materials Science (2013)
N-polar GaN∕AlGaN∕GaN high electron mobility transistors
Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck.
Journal of Applied Physics (2007)
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi.
Applied Physics Letters (2018)
Large area single crystal (0001) oriented MoS2
Masihhur R. Laskar;Lu Ma;Santhakumar Kannappan;Pil Sung Park.
Applied Physics Letters (2013)
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang.
Applied Physics Letters (2017)
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