World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
17943
World Ranking
628
National Ranking
281

Materials Science

D-Index
78
Citations
19047
World Ranking
3023
National Ranking
842

Siddharth Rajan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Siddharth Rajan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 346 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Siddharth Rajan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Siddharth Rajan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 77 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Siddharth Rajan is affiliated with The Ohio State University in the United States. Their research spans multiple aspects of materials science, engineering, and physics, with a focus on semiconductor materials and electronic device applications. They have contributed extensively to fields such as electrical and electronic engineering, electronic, optical and magnetic materials, materials chemistry, condensed matter physics, and renewable energy and sustainability.

Their recent publications reveal a concentration on gallium oxide (Ga2O3) and related semiconductor materials. Notable papers include:

  • "The 2020 UV emitter roadmap," 2020, published in Journal of Physics D Applied Physics
  • "β-Gallium oxide power electronics," 2022, published in APL Materials
  • "Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3," 2020, published in physica status solidi (RRL) - Rapid Research Letters
  • "High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer," 2020, published in Journal of Applied Physics
  • "β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm," 2021, published in IEEE Electron Device Letters

The research topics that Dr. Rajan covers include:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides

They frequently collaborate with several coauthors who are active in similar research domains. Frequent coauthors include Nidhin Kurian Kalarickal, Chandan Joishi, Zhanbo Xia, Sheikh Ifatur Rahman, and Jinwoo Hwang.

Their publications often appear in specialized venues, indicating a focused engagement with advanced semiconductor and materials research. These venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Journal of Applied Physics
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices

The breadth of their work covers main fields such as materials science (123 publications), engineering (85 publications), and physics and astronomy (69 publications). Subfields emphasize electrical and electronic engineering, electronic, optical, and magnetic materials, materials chemistry, and condensed matter physics. Together, these reflect a research focus supporting semiconductor technology development and characterization.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

    Dante J O'Hara;Tiancong Zhu;Amanda H Trout;Adam S Ahmed

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • β-Gallium oxide power electronics

    Unknown

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • p-type doping of MoS2 thin films using Nb

    Masihhur R. Laskar;Digbijoy N. Nath;Lu Ma;Edwin W. Lee

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

    Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang

  • N-polar GaN∕AlGaN∕GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Large Area Single Crystal (0001) Oriented MoS2 Thin Films

    Masihhur R. Laskar;Lu Ma;ShanthaKumar K;Pil Sung Park

  • High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

    Anamika Singh Pratiyush;Sriram Krishnamoorthy;Swanand Vishnu Solanke;Zhanbo Xia

  • Polarity governs atomic interaction through two-dimensional materials

    Wei Kong;Huashan Li;Huashan Li;Kuan Qiao;Yunjo Kim

  • N-polar GaN epitaxy and high electron mobility transistors

    Man Hoi Wong;Stacia Keller;Sansaptak Dasgupta Nidhi;Daniel J Denninghoff

  • Large area single crystal (0001) oriented MoS2

    Masihhur R. Laskar;Lu Ma;Santhakumar Kannappan;Pil Sung Park

  • Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

    C. Poblenz;P. Waltereit;S. Rajan;S. Heikman

  • Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    Michele Esposto;Sriram Krishnamoorthy;Digbijoy N. Nath;Sanyam Bajaj

  • Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

    T. Palacios;S. Rajan;A. Chakraborty;S. Heikman

  • Polarization-engineered GaN/InGaN/GaN tunnel diodes

    Sriram Krishnamoorthy;Digbijoy N. Nath;Fatih Akyol;Pil Sung Park

  • N-polar GaN/AIGaN/GaN high electron mobility transistors

    Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck

Frequent Co-Authors

Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Digbijoy N. Nath
Digbijoy N. Nath Indian Institute of Science
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Wu Lu
Wu Lu The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories

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