D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 58 Citations 8,672 210 World Ranking 662 National Ranking 327
Materials Science D-index 65 Citations 11,465 243 World Ranking 2480 National Ranking 785

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Transistor

The scientist’s investigation covers issues in Optoelectronics, Molecular beam epitaxy, Wide-bandgap semiconductor, Transistor and Doping. His research integrates issues of Field-effect transistor, Gallium nitride and Transconductance in his study of Optoelectronics. He interconnects Quantum tunnelling, Light-emitting diode, Electrical resistivity and conductivity and Electronic band structure in the investigation of issues within Wide-bandgap semiconductor.

His Transistor research incorporates themes from Nanotechnology and Electronics. His Doping study combines topics in areas such as Fermi gas and Silicon. The study incorporates disciplines such as Semiconductor device, Electron mobility and Chemical vapor deposition in addition to Heterojunction.

His most cited work include:

  • High-power AlGaN/GaN HEMTs for Ka-band applications (333 citations)
  • Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (315 citations)
  • Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit (236 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Transistor, Wide-bandgap semiconductor, Heterojunction and Doping. The concepts of his Optoelectronics study are interwoven with issues in Field-effect transistor and Gallium nitride. In his study, Analytical chemistry is inextricably linked to Molecular beam epitaxy, which falls within the broad field of Transistor.

His biological study spans a wide range of topics, including Electron mobility, Electrical resistivity and conductivity and Contact resistance. Siddharth Rajan usually deals with Heterojunction and limits it to topics linked to Semiconductor and Dielectric. Siddharth Rajan combines subjects such as Electronic engineering and Power density with his study of High-electron-mobility transistor.

He most often published in these fields:

  • Optoelectronics (69.67%)
  • Transistor (29.43%)
  • Wide-bandgap semiconductor (25.53%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (69.67%)
  • Band gap (15.92%)
  • Transistor (29.43%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Band gap, Transistor, Heterojunction and Doping are his primary areas of study. His studies in Optoelectronics integrate themes in fields like Field-effect transistor and Breakdown voltage. He studied Band gap and Exciton that intersect with Photon energy and Atomic physics.

The Transistor study combines topics in areas such as Cutoff frequency, Ohmic contact and Wide-bandgap semiconductor. His study in Heterojunction is interdisciplinary in nature, drawing from both Beta, Fermi gas, Semiconductor and Engineering physics. His Doping research is multidisciplinary, incorporating perspectives in Thin film, Electron mobility, Molecular physics and Analytical chemistry.

Between 2017 and 2021, his most popular works were:

  • Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (315 citations)
  • Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit (236 citations)
  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures (136 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optoelectronics
  • Transistor

His main research concerns Optoelectronics, Doping, Transistor, Heterojunction and Breakdown voltage. His work on Optoelectronics is being expanded to include thematically relevant topics such as Detector. Siddharth Rajan has researched Doping in several fields, including Electron mobility, Field-effect transistor, Semiconductor, Molecular physics and Threshold voltage.

His studies link Analytical chemistry with Transistor. His Heterojunction research focuses on Cutoff frequency and how it relates to Signal, Parasitic element, Power gain, Velocity saturation and Atomic physics. His Breakdown voltage research is multidisciplinary, incorporating elements of Transconductance, Chemical vapor deposition and Logic gate.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

High-power AlGaN/GaN HEMTs for Ka-band applications

T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz.
IEEE Electron Device Letters (2005)

455 Citations

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

Dante J O'Hara;Tiancong Zhu;Amanda H Trout;Adam S Ahmed.
Nano Letters (2018)

302 Citations

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena.
Advanced electronic materials (2018)

284 Citations

p-type doping of MoS2 thin films using Nb

Masihhur R. Laskar;Digbijoy N. Nath;Lu Ma;Edwin W. Lee.
Applied Physics Letters (2014)

273 Citations

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Pouya Moetakef;Tyler A. Cain;Daniel G. Ouellette;Jack Y. Zhang.
Applied Physics Letters (2011)

265 Citations

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Siddharth Rajan;Alessandro Chini;Man Hoi Wong;James S. Speck.
Journal of Applied Physics (2007)

230 Citations

Large area single crystal (0001) oriented MoS2

Masihhur R. Laskar;Lu Ma;Santhakumar Kannappan;Pil Sung Park.
Applied Physics Letters (2013)

227 Citations

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Masihhur R. Laskar;Lu Ma;ShanthaKumar K;Pil Sung Park.
arXiv: Materials Science (2013)

219 Citations

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

C. Poblenz;P. Waltereit;S. Rajan;S. Heikman.
Journal of Vacuum Science & Technology B (2004)

203 Citations

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi.
Applied Physics Letters (2018)

182 Citations

Best Scientists Citing Siddharth Rajan

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 178

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 176

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 87

Stacia Keller

Stacia Keller

University of California, Santa Barbara

Publications: 85

Debdeep Jena

Debdeep Jena

Cornell University

Publications: 75

Yue Hao

Yue Hao

Xidian University

Publications: 75

Fan Ren

Fan Ren

University of Florida

Publications: 62

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 60

Susanne Stemmer

Susanne Stemmer

University of California, Santa Barbara

Publications: 59

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 57

Tomas Palacios

Tomas Palacios

MIT

Publications: 55

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 52

Huili Grace Xing

Huili Grace Xing

Cornell University

Publications: 45

Zetian Mi

Zetian Mi

University of Michigan–Ann Arbor

Publications: 36

Steven A. Ringel

Steven A. Ringel

The Ohio State University

Publications: 33

Feng Wu

Feng Wu

University of California, Santa Barbara

Publications: 33

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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