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Overview

Digbijoy N. Nath is affiliated with the Indian Institute of Science in India. Their research focuses on semiconductor devices and materials, with significant contributions in the areas of engineering, materials science, and physics and astronomy. They have produced numerous publications spanning related subfields such as electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and cellular and molecular neuroscience.

The main topics of their work include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Radio Frequency Integrated Circuit Design
  • Advanced Memory and Neural Computing
  • Chalcogenide Semiconductor Thin Films

Digbijoy N. Nath has published extensively in several venues, with frequent contributions in:

  • IEEE Transactions on Electron Devices
  • physica status solidi (a)
  • Journal of Applied Physics
  • Semiconductor Science and Technology
  • arXiv (Cornell University)

Their recent papers include:

  • The road ahead for ultrawide bandgap solar-blind UV photodetectors (2022, Journal of Applied Physics)
  • UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction (2020, Sensors and Actuators A Physical)
  • Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs (2020, IEEE Transactions on Electron Devices)
  • An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition (2021, RSC Advances)
  • High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3 (2020, physica status solidi (a))

Frequent coauthors associated with Digbijoy N. Nath's work include:

  • R. Muralidharan
  • Srinivasan Raghavan
  • Hareesh Chandrasekar
  • Prosenjit Sen

Best Publications

  • Large Area Single Crystal (0001) Oriented MoS2 Thin Films

    Masihhur R. Laskar;Lu Ma;ShanthaKumar K;Pil Sung Park

  • High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

    Anamika Singh Pratiyush;Sriram Krishnamoorthy;Swanand Vishnu Solanke;Zhanbo Xia

  • Large area single crystal (0001) oriented MoS2

    Masihhur R. Laskar;Lu Ma;Santhakumar Kannappan;Pil Sung Park

  • Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    Michele Esposto;Sriram Krishnamoorthy;Digbijoy N. Nath;Sanyam Bajaj

  • Polarization-engineered GaN/InGaN/GaN tunnel diodes

    Sriram Krishnamoorthy;Digbijoy N. Nath;Fatih Akyol;Pil Sung Park

  • Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

    F. Akyol;D. N. Nath;S. Krishnamoorthy;P. S. Park

  • High Responsivity in Molecular Beam Epitaxy (MBE) grown {eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

    Anamika Singh Pratiyush;Sriram Krishnamoorthy;Swanand Vishnu Solanke;Zhanbo Xia

  • Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

    Ting-Hsiang Hung;Pil Sung Park;Sriram Krishnamoorthy;Digbijoy N. Nath

  • N-Polar III-Nitride Green (540 nm) Light Emitting Diode

    Fatih Akyol;Digbijoy N. Nath;Emre Gür;Emre Gür;Pil Sung Park

  • Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

    Shashwat Rathkanthiwar;Anisha Kalra;Swanand V. Solanke;Neha Mohta

  • Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

    Ting-Hsiang Hung;Sriram Krishnamoorthy;Michele Esposto;Digbijoy Neelim Nath

  • Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

    Anisha Kalra;Sandeep Vura;Shashwat Rathkanthiwar;Rangarajan Muralidharan

  • Molecular beam epitaxy of N-polar InGaN

    Digbijoy N. Nath;Emre Gür;Steven A. Ringel;Siddharth Rajan

  • Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

    Sanyam Bajaj;Ting-Hsiang Hung;Fatih Akyol;Digbijoy Nath

  • Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

    Anamika Singh Pratiyush;Sriram Krishnamoorthy;Sriram Krishnamoorthy;Sandeep Kumar;Zhanbo Xia

  • Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

    Lu Ma;Digbijoy N. Nath;Edwin W. Lee;Choong Hee Lee

  • Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

    D. N. Nath;P. S. Park;Z. C. Yang;S. Rajan

  • Unipolar vertical transport in GaN/AlGaN/GaN heterostructures

    D. N. Nath;Z. C. Yang;C.-Y. Lee;P. S. Park

  • Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

    Digbijoy N. Nath;Emre Gür;Steven A. Ringel;Siddharth Rajan

  • Surface State Engineering of Metal/MoS 2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

    Shubhadeep Bhattacharjee;Kolla Lakshmi Ganapathi;Digbijoy N. Nath;Navakanta Bhat

Frequent Co-Authors

Siddharth Rajan
Siddharth Rajan The Ohio State University
Sukant K. Tripathy
Sukant K. Tripathy University of Massachusetts Lowell
Lu Ma
Lu Ma Brookhaven National Laboratory
Yiying Wu
Yiying Wu The Ohio State University
Jacob B. Khurgin
Jacob B. Khurgin Johns Hopkins University
Stacia Keller
Stacia Keller University of California, Santa Barbara
Colin J. Humphreys
Colin J. Humphreys Queen Mary University of London
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Wu Lu
Wu Lu The Ohio State University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

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