World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
10596
World Ranking
2097
National Ranking
821

Materials Science

D-Index
56
Citations
10706
World Ranking
8287
National Ranking
2040

Overview

Andrew A. Allerman is affiliated with Sandia National Laboratories in the United States. Their research primarily focuses on semiconductor devices and materials with an emphasis on gallium nitride (GaN) based technologies. The main fields of study associated with their work include Engineering and Physics and Astronomy, with specific subfields in Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, and Biomedical Engineering.

The scientist's research covers a range of topics, notably:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Metal and Thin Film Mechanics
  • Advancements in Semiconductor Devices and Circuit Design
  • Photocathodes and Microchannel Plates

Among their recent papers are:

  • "Al-rich AlGaN based transistors" (2020), published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions" (2022), published in IEEE Transactions on Electron Devices
  • "Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress" (2021), published in Materials Today
  • "X-ray topography characterization of gallium nitride substrates for power device development" (2020), published in Journal of Crystal Growth
  • "Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs" (2020), published in IEEE Electron Device Letters

Frequent co-authors collaborating with Allerman include:

  • Andrew Armstrong
  • Robert Kaplar
  • Brianna Klein
  • Jeffrey Steinfeldt
  • Andrew Binder

The research output is often disseminated through venues such as ECS Meeting Abstracts, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, and Microscopy and Microanalysis.

In addition to journal publications, Allerman has contributed to book literature, including a chapter titled "III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12)" published in 2020 by the Office of Scientific and Technical Information.

Best Publications

  • InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

    Steven R. Kurtz;A. A. Allerman;E. D. Jones;J. M. Gee

  • Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

    K.D. Choquette;J.F. Klem;A.J. Fischer;O. Blum

  • Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

    S. R. Lee;A. M. West;A. A. Allerman;K. E. Waldrip

  • Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

    A. J. Fischer;A. A. Allerman;M. H. Crawford;K. H. A. Bogart

  • Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure

    E. D. Jones;N. A. Modine;A. A. Allerman;S. R. Kurtz

  • Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

    Y. Xi;J.-Q. Xi;Th. Gessmann;J. M. Shah

  • InGaAsN/GaAs heterojunction for multi-junction solar cells

    Steven R. Kurtz;Andrew A. Allerman;John F. Klem;Eric D. Jones

  • Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

    A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart

  • Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

    R. A. Mair;J. Y. Lin;H. X. Jiang;E. D. Jones

  • Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen

    Steven R. Kurtz;Andrew A. Allerman;Carleton H. Seager;Robert M. Sieg

  • Strain relaxation in AlGaN multilayer structures by inclined dislocations

    David M. Follstaedt;Stephen R. Lee;Andrew A. Allerman;J.A. Floro

  • Type-II interband quantum cascade laser at 3.8 [micro sign]m

    Chih-Hsiang Lin;Rui Q. Yang;D. Zhang;S. J. Murry

  • High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser

    William J. Alford;Thomas D. Raymond;Andrew A. Allerman

  • Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

    S. A. Ringel;J. A. Carlin;C. L. Andre;M. K. Hudait

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

    D. D. Koleske;A. J. Fischer;A. A. Allerman;C. C. Mitchell

  • An AlN/Al0.85Ga0.15N high electron mobility transistor

    Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  • Vertical GaN Power Diodes With a Bilayer Edge Termination

    Jeramy R. Dickerson;Andrew A. Allerman;Benjamin N. Bryant;Arthur J. Fischer

  • Intracavity Frequency Doubling of a Diode-Pumped, External Cavity, Surface Emitting Semiconductor Laser

    T. D. Raymond;W. J. Alford;M. H. Crawford;A. A. Allerman

  • Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

    E.W. Young;K.D. Choquette;S.L. Chuang;K.M. Geib

Frequent Co-Authors

Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
Kent D. Choquette
Kent D. Choquette University of Illinois at Urbana-Champaign
Robert Kaplar
Robert Kaplar Sandia National Laboratories
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories
John F. Klem
John F. Klem Sandia National Laboratories
Siddharth Rajan
Siddharth Rajan The Ohio State University

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