World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
10596
World Ranking
2097
National Ranking
822

Materials Science

D-Index
56
Citations
10706
World Ranking
8285
National Ranking
2038

Andrew A. Allerman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Andrew A. Allerman sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 398 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Andrew A. Allerman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Andrew A. Allerman sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Andrew A. Allerman is affiliated with Sandia National Laboratories in the United States. Their research primarily focuses on semiconductor devices and materials with an emphasis on gallium nitride (GaN) based technologies. The main fields of study associated with their work include Engineering and Physics and Astronomy, with specific subfields in Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, and Biomedical Engineering.

The scientist's research covers a range of topics, notably:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Metal and Thin Film Mechanics
  • Advancements in Semiconductor Devices and Circuit Design
  • Photocathodes and Microchannel Plates

Among their recent papers are:

  • "Al-rich AlGaN based transistors" (2020), published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions" (2022), published in IEEE Transactions on Electron Devices
  • "Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress" (2021), published in Materials Today
  • "X-ray topography characterization of gallium nitride substrates for power device development" (2020), published in Journal of Crystal Growth
  • "Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs" (2020), published in IEEE Electron Device Letters

Frequent co-authors collaborating with Allerman include:

  • Andrew Armstrong
  • Robert Kaplar
  • Brianna Klein
  • Jeffrey Steinfeldt
  • Andrew Binder

The research output is often disseminated through venues such as ECS Meeting Abstracts, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, and Microscopy and Microanalysis.

In addition to journal publications, Allerman has contributed to book literature, including a chapter titled "III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12)" published in 2020 by the Office of Scientific and Technical Information.

Best Publications

  • InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

    Steven R. Kurtz;A. A. Allerman;E. D. Jones;J. M. Gee

  • Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

    K.D. Choquette;J.F. Klem;A.J. Fischer;O. Blum

  • Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

    S. R. Lee;A. M. West;A. A. Allerman;K. E. Waldrip

  • Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

    A. J. Fischer;A. A. Allerman;M. H. Crawford;K. H. A. Bogart

  • Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure

    E. D. Jones;N. A. Modine;A. A. Allerman;S. R. Kurtz

  • Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

    Y. Xi;J.-Q. Xi;Th. Gessmann;J. M. Shah

  • InGaAsN/GaAs heterojunction for multi-junction solar cells

    Steven R. Kurtz;Andrew A. Allerman;John F. Klem;Eric D. Jones

  • Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

    A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart

  • Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

    R. A. Mair;J. Y. Lin;H. X. Jiang;E. D. Jones

  • Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen

    Steven R. Kurtz;Andrew A. Allerman;Carleton H. Seager;Robert M. Sieg

  • Strain relaxation in AlGaN multilayer structures by inclined dislocations

    David M. Follstaedt;Stephen R. Lee;Andrew A. Allerman;J.A. Floro

  • Type-II interband quantum cascade laser at 3.8 [micro sign]m

    Chih-Hsiang Lin;Rui Q. Yang;D. Zhang;S. J. Murry

  • High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser

    William J. Alford;Thomas D. Raymond;Andrew A. Allerman

  • Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

    S. A. Ringel;J. A. Carlin;C. L. Andre;M. K. Hudait

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

    D. D. Koleske;A. J. Fischer;A. A. Allerman;C. C. Mitchell

  • An AlN/Al0.85Ga0.15N high electron mobility transistor

    Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  • Vertical GaN Power Diodes With a Bilayer Edge Termination

    Jeramy R. Dickerson;Andrew A. Allerman;Benjamin N. Bryant;Arthur J. Fischer

  • Intracavity Frequency Doubling of a Diode-Pumped, External Cavity, Surface Emitting Semiconductor Laser

    T. D. Raymond;W. J. Alford;M. H. Crawford;A. A. Allerman

  • Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation

    E.W. Young;K.D. Choquette;S.L. Chuang;K.M. Geib

Frequent Co-Authors

Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
Kent D. Choquette
Kent D. Choquette University of Illinois at Urbana-Champaign
Robert Kaplar
Robert Kaplar Sandia National Laboratories
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories
John F. Klem
John F. Klem Sandia National Laboratories
Siddharth Rajan
Siddharth Rajan The Ohio State University

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