Robert Kaplar

Best Publications

• Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

  J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  1496
  Citations

• Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

  A. J. Fischer;A. A. Allerman;M. H. Crawford;K. H. A. Bogart

  244
  Citations

• Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

  R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  157
  Citations

• An AlN/Al0.85Ga0.15N high electron mobility transistor

  Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  156
  Citations

• Vertical GaN Power Diodes With a Bilayer Edge Termination

  Jeramy R. Dickerson;Andrew A. Allerman;Benjamin N. Bryant;Arthur J. Fischer

  134
  Citations

• Deep levels in p-type InGaAsN lattice matched to GaAs

  D. Kwon;R. J. Kaplar;S. A. Ringel;A. A. Allerman

  109
  Citations

• High voltage and high current density vertical GaN power diodes

  A.M. Armstrong;A.A. Allerman;A.J. Fischer;M.P. King

  85
  Citations

• Al-rich AlGaN based transistors

  Albert G. Baca;Andrew M. Armstrong;Brianna A. Klein;Andrew A. Allerman

  81
  Citations

• Deep Levels in p- and n-type InGaAsN for High Efficiency Multi-Junction III-V Solar Cells

  R.J. Kaplar;D. Kwon;S.A. Ringel;A.A. Allerman

  78
  Citations

• Ultrawide bandgap semiconductors

  Masataka Higashiwaki;Robert Kaplar;Julien Pernot;Hongping Zhao

  77
  Citations

• Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

  Unknown

  71
  Citations

• Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

  S. DasGupta;Min Sun;A. Armstrong;R. J. Kaplar

  68
  Citations

• Characterization and reliability of SiC- and GaN-based power transistors for renewable energy applications

  R. J. Kaplar;M. J. Marinella;S. DasGupta;M. A. Smith

  60
  Citations

• Deep levels and their impact on generation current in Sn-doped InGaAsN

  R. J. Kaplar;A. R. Arehart;S. A. Ringel;A. A. Allerman

  60
  Citations

• Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials

  Robert J. Kaplar;Jason C. Neely;Dale L. Huber;Lee J. Rashkin

  55
  Citations

• Ohmic contacts to Al-rich AlGaN heterostructures

  E. A. Douglas;S. Reza;C. Sanchez;D. Koleske

  54
  Citations

• RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates

  Albert G. Baca;Brianna A. Klein;Joel R. Wendt;Stefan M. Lepkowski

  51
  Citations

• Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

  Michael E. Coltrin;Albert G. Baca;Robert J. Kaplar

  49
  Citations

• Operation Up to 500 °C of Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N High Electron Mobility Transistors

  Patrick H. Carey;Fan Ren;Albert G. Baca;Brianna A. Klein

  44
  Citations

• Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

  Albert G. Baca;Brianna A. Klein;Andrew A. Allerman;Andrew M. Armstrong

  42
  Citations